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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF644NSTRL

Name: IRF644NSTRL
Brand: Vishay Siliconix
SKU: IRF644NSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF644NSTRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF644NSTRL.pdf

Description:: MOSFET N-CH 250V 14A D2PAK

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Product details

Overview

IRF644NSTRL from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.240 Ω R_DS(on) at V_GS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature. It delivers rugged avalanche capability (180 mJ single-pulse), fast switching (10 ns turn-on delay), and is optimized for high-current DC-DC converters and motor control.

For engineers reviewing the IRF644NSTRL datasheet, IRF644NSTRL pinout, IRF644NSTRL application, or IRF644NSTRL equivalent, this page provides verified electrical parameters, thermal performance data, D2PAK package layout, and validated alternative parts for industrial power design validation and BOM optimization.

Technical Context

This device belongs to Vishay's fifth-generation Power MOSFET family, fabricated using advanced process technology to minimize on-resistance per silicon area while maintaining high dV/dt immunity (7.9 V/ns) and full unclamped inductive switching (UIS) ruggedness. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (1060 pF C_iss) support simple drive requirements with standard 10 V logic-level gate drivers.

The IRF644NSTRL is specifically rated for surface-mount operation in the D2PAK package, offering 2.0 W dissipation in typical PCB mount and 150 W at case temperature of 25 °C. Its body diode exhibits 165–250 ns reverse recovery time and 1.0–1.6 µC Q_rr, enabling reliable freewheeling in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in offline SMPS up to 230 VAC mains with margin
R_DS(on)	0.240 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 8.4 A continuous drain current
Q_g	54 nC - determines gate driver power requirement and switching speed trade-off in 100–500 kHz designs
I_D (cont.)	14 A @ T_C = 25 °C - defines maximum steady-state current under heatsink-cooled conditions
E_AS	180 mJ - ensures robustness against inductive load transients without failure in motor drive or relay control
T_J max	175 °C - allows operation in sealed industrial enclosures with limited airflow and high ambient temperatures
C_iss	1060 pF - impacts high-frequency gate drive losses and EMI filter sizing in resonant converters

Pinout & Package

The IRF644NSTRL is housed in a surface-mount D2PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The drain tab is electrically connected to the die backside and serves as the primary heat path to the PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level signal; requires ≤54 nC charge for full enhancement; low 9.2 nC Q_gs enables fast turn-on
D	Drain output terminal	High-voltage switching node; electrically tied to exposed metal tab for thermal conduction and low-inductance PCB mounting
S	Source return path	Common reference for gate drive and load current; internal source inductance (7.5 nH) affects di/dt-induced voltage spikes during turn-off

Key Features

Feature	Design Value
Fully avalanche rated	180 mJ single-pulse energy rating enables reliable operation under unclamped inductive switching without derating
Dynamic dV/dt rating	7.9 V/ns immunity prevents false turn-on in high-noise motor drive or SMPS environments
Lead (Pb)-free RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; compatible with lead-free assembly processes up to 260 °C peak
Low R_DS(on) × Q_g figure-of-merit	12.96 Ω·nC - balances conduction and switching losses for high-efficiency 100–300 kHz power stages
Simple drive requirements	Threshold voltage range (2.0–4.0 V) and low gate charge allow direct interface with microcontroller GPIO or low-power gate drivers

Applications

Motor Drive Inverter Stage	DC-DC Converter Primary Switch
Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controllers driving loads up to 500 W. IC Role / Device Role / Timing Role: High-side or low-side switching element handling bidirectional PWM at 20–50 kHz with body-diode commutation. Use Value: 175 °C junction rating and 180 mJ avalanche energy ensure survival during stall current surges and regenerative braking transients.	Use Scenario: Primary-side switch in isolated flyback or forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz, turning on/off under zero-voltage or hard-switched conditions. Use Value: 0.240 Ω R_DS(on) minimizes conduction loss at 8–12 A peak, while 54 nC Q_g enables efficient gate drive with minimal driver IC power consumption.
Uninterruptible Power Supply (UPS) Output Stage	Industrial Solenoid/Relay Driver
Use Scenario: H-bridge output stage delivering clean 120/230 VAC sine-wave output via SPWM modulation. IC Role / Device Role / Timing Role: Low-loss switching device conducting high RMS current with low thermal resistance (R_thJC = 1.0 °C/W). Use Value: D2PAK package provides 2.0 W surface-mount dissipation and low R_thCS (0.50 °C/W) when mounted on 2 oz copper with thermal vias.	Use Scenario: High-current solenoid actuator driver in factory automation systems requiring 10–15 A pulsed loads. IC Role / Device Role / Timing Role: Single-pole switch controlling inductive load with integrated body diode providing freewheeling path. Use Value: 165–250 ns trr and 1.0–1.6 µC Q_rr reduce switching losses and EMI during rapid turn-off of 100–500 mH coils.

Motor Drive Inverter Stage

DC-DC Converter Primary Switch

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controllers driving loads up to 500 W.

IC Role / Device Role / Timing Role: High-side or low-side switching element handling bidirectional PWM at 20–50 kHz with body-diode commutation.

Use Value: 175 °C junction rating and 180 mJ avalanche energy ensure survival during stall current surges and regenerative braking transients.

Use Scenario: Primary-side switch in isolated flyback or forward converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz, turning on/off under zero-voltage or hard-switched conditions.

Use Value: 0.240 Ω R_DS(on) minimizes conduction loss at 8–12 A peak, while 54 nC Q_g enables efficient gate drive with minimal driver IC power consumption.

Uninterruptible Power Supply (UPS) Output Stage

Industrial Solenoid/Relay Driver

Use Scenario: H-bridge output stage delivering clean 120/230 VAC sine-wave output via SPWM modulation.

IC Role / Device Role / Timing Role: Low-loss switching device conducting high RMS current with low thermal resistance (R_thJC = 1.0 °C/W).

Use Value: D2PAK package provides 2.0 W surface-mount dissipation and low R_thCS (0.50 °C/W) when mounted on 2 oz copper with thermal vias.

Use Scenario: High-current solenoid actuator driver in factory automation systems requiring 10–15 A pulsed loads.

IC Role / Device Role / Timing Role: Single-pole switch controlling inductive load with integrated body diode providing freewheeling path.

Use Value: 165–250 ns trr and 1.0–1.6 µC Q_rr reduce switching losses and EMI during rapid turn-off of 100–500 mH coils.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF644NS	D2PAK package, same 250 V/14 A rating and 0.240 Ω R_DS(on), but SnPb termination (non-RoHS)	Compatible in legacy leaded assembly lines; not suitable for new RoHS-compliant designs	Select IRF644NSTRL for lead-free manufacturing; use IRF644NS only if Pb exemption applies and reflow profile permits SnPb soldering
SiHF644NSTL-E3	Same D2PAK package, identical 250 V/14 A/0.240 Ω specs, Vishay's alternate part number with enhanced moisture sensitivity level (MSL 1)	Identical electrical performance; superior humidity robustness for long-term storage before reflow	Prefer SiHF644NSTL-E3 for high-reliability programs requiring MSL-1 qualification; IRF644NSTRL remains optimal for cost-sensitive volume production

Compared with IRF644NS and SiHF644NSTL-E3, the IRF644NSTRL offers identical core electrical performance and D2PAK mechanical form factor, but distinguishes itself with Pb-free compliance and documented suitability for modern lead-free reflow profiles-making it the default choice for new industrial power designs requiring RoHS adherence.

Availability

IRF644NSTRL is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC converter primary switches, and industrial solenoid drivers requiring stable component supply across extended production lifecycles.

Supply support for IRF644NSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF644NSTRL belongs to Vishay's fifth-generation Power MOSFET product line, engineered for high-current, high-voltage switching in industrial motor controls, UPS systems, and offline power supplies where avalanche robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for the IRF644NSTRL at 100 °C case temperature?

The IRF644NSTRL has a continuous drain current rating of 9.9 A at T_C = 100 °C, as specified in its absolute maximum ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsinking conditions and must be used in thermal design calculations alongside R_thJC = 1.0 °C/W to ensure junction temperature remains below 175 °C. The IRF644NSTRL maintains full functionality within this limit.

Does the IRF644NSTRL have an integrated body diode, and what are its key recovery characteristics?

Yes, the IRF644NSTRL includes an integral body diode formed by the MOSFET's p-n junction. Its reverse recovery time (t_rr) is 165–250 ns at T_J = 25 °C, I_F = 14 A, and dI/dt = 100 A/µs, with reverse recovery charge (Q_rr) of 1.0–1.6 µC. These values are measured under standardized conditions and directly impact switching loss and EMI in freewheeling applications. The IRF644NSTRL's body diode is fully characterized in the datasheet.

Is the IRF644NSTRL pin-compatible with other variants like IRF644N or IRF644NL?

No-the IRF644NSTRL uses the D2PAK (TO-263) package, while IRF644N is in TO-220 and IRF644NL is in I2PAK (TO-262); these packages have different pinouts, thermal footprints, and mounting requirements. Although all share identical electrical specifications, they are not mechanically interchangeable. The IRF644NSTRL requires a D2PAK-specific PCB layout and cannot be substituted without board revision.

What is the gate threshold voltage range for the IRF644NSTRL, and how does it affect drive circuit design?

The IRF644NSTRL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA. This wide range means full enhancement requires ≥10 V gate drive to guarantee R_DS(on) ≤ 0.240 Ω across process and temperature variation. Logic-level drivers (e.g., 5 V) may yield inconsistent conduction; thus, the IRF644NSTRL is best driven with 10–15 V supplies. This specification is explicitly defined in the IRF644NSTRL datasheet.

Can the IRF644NSTRL be paralleled for higher current capacity, and what design considerations apply?

Yes, the IRF644NSTRL supports paralleling due to its positive R_DS(on) temperature coefficient and low gate charge mismatch-key features highlighted in its "Ease of Paralleling" specification. To ensure balanced current sharing, use matched gate resistors (≤6.2 Ω), symmetrical PCB layout with equal trace lengths, and shared heatsinking. Thermal coupling between devices is critical; the IRF644NSTRL's D2PAK package facilitates this via common copper pour. These guidelines are validated in Vishay's application notes for the IRF644NSTRL family.

IRF644NSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF644NSTRL FAQ

1.How can I place an order for IRF644NSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF644NSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF644NSTRL reliable?

The price and inventory of IRF644NSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NSTRL is usually 5 days.

3.What payment methods are accepted for IRF644NSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF644NSTRL?

IRF644NSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF644NSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF644NSTRL?

For technical support, including IRF644NSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NSTRL requirements.

6.How does Aetrix verify that IRF644NSTRL is sourced from the original manufacturer or authorized distributors?

All IRF644NSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NSTRL meets industry standards.

7.What is the process for return or replacement of IRF644NSTRL?

All IRF644NSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF644NSTRL part is unused and in its original packaging.

Return procedure for IRF644NSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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