Vishay Siliconix IRF644NSTRLPBF
- Part No.:
- IRF644NSTRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF644NSTRLPBF.pdf
- Description:
- MOSFET N-CH 250V 14A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,152
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Product details
Overview
IRF644NSTRLPBF from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.240 Ω RDS(on) at VGS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature. It delivers rugged avalanche capability (180 mJ single-pulse), fast switching (10 ns turn-on delay), and is optimized for high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF644NSTRLPBF datasheet, IRF644NSTRLPBF pinout, IRF644NSTRLPBF application, or IRF644NSTRLPBF equivalent, key selection criteria include its TO-263 thermal performance (RthJC = 1.0 °C/W), dV/dt rating (7.9 V/ns), and lead-free RoHS-compliant construction - critical for industrial power supply and automotive auxiliary load switching designs.
Technical Context
This MOSFET employs Vishay's fifth-generation silicon process to achieve low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) and transconductance (8.8 S typical) support direct TTL/CMOS drive with minimal external buffering.
The device integrates a fast-recovery body diode (trr = 165–250 ns, Qrr = 1.0–1.6 µC) and exhibits stable dynamic parameters across temperature: Ciss = 1060 pF, Coss = 140 pF, and Crss = 38 pF at VDS = 25 V - enabling predictable snubber design in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 200 V bus designs with 25 % margin against transients |
| RDS(on) | 0.240 Ω @ VGS = 10 V - enables ≤3.4 W conduction loss at 12 A continuous drain current |
| Qg | 54 nC - determines gate driver power requirement and switching speed in 100–500 kHz SMPS |
| ID (TC = 100 °C) | 9.9 A - defines usable current in thermally constrained PCB-mount applications |
| EAS | 180 mJ - allows safe operation under unclamped inductive load switching without external clamping |
| tr/tf | 21 ns / 17 ns - minimizes switching losses in high-frequency synchronous rectifiers |
| TJ max | 175 °C - permits operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance (RthJC = 1.0 °C/W) and high-power dissipation up to 2.0 W on standard FR-4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–10 V logic-level drive; 9.2 nC Qgs ensures rapid turn-on with low gate resistance |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on bottom of D2PAK; primary heat path to heatsink or PCB plane |
| S (Source) | Reference and return path | Provides Kelvin sense point for current monitoring; internal source inductance (LS = 7.5 nH) affects diode recovery behavior |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 180 mJ single-pulse energy handling eliminates need for external avalanche clamps in motor drive flyback |
| Dynamic dV/dt rating | 7.9 V/ns immunity prevents spurious turn-on during high-slew-rate bus transients in industrial inverters |
| Lead (Pb)-free RoHS compliant | Meets EU Directive 2011/65/EU; SnAgCu solder compatible with standard reflow profiles (peak 260 °C) |
| Low Qgd/Qg ratio | 26/54 = 48 % - improves Miller immunity and enables stable operation with high-side gate drivers |
| Fast body diode recovery | trr = 165 ns (typ.) - reduces cross-conduction losses in synchronous buck converters operating >200 kHz |
Applications
| Industrial DC-DC Converters | Automotive Auxiliary Loads |
|---|---|
Use Scenario: 24 V input, 5–12 V output isolated forward converter delivering 15 A at 300 kHz. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active clamp forward topology. Use Value: 0.240 Ω RDS(on) limits conduction loss to 4.3 W at full load; 175 °C rating sustains operation in sealed control cabinet. |
Use Scenario: 12 V battery-fed seat heater or window lift driver with PWM duty cycling. IC Role / Device Role / Timing Role: High-side load switch controlling resistive heating element. Use Value: Avalanche rating absorbs inductive kickback from relay coils; TO-263 footprint enables compact layout with integrated thermal pad. |
| Motor Drive Half-Bridges | UPS Inverter Stages |
Use Scenario: 48 V BLDC motor controller using six-pack IGBT/MOSFET modules. IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge leg with bootstrap gate drive. Use Value: 54 nC Qg allows clean 100 ns turn-off using 10 Ω gate resistor; dV/dt immunity prevents false triggering during phase commutation. |
Use Scenario: Online double-conversion UPS with 200 V DC link feeding 230 V AC output via H-bridge. IC Role / Device Role / Timing Role: Output stage switching device in full-bridge inverter. Use Value: 250 V VDS provides 20 % margin over 200 V rail; 180 mJ EAS handles short-circuit fault energy without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.23 Ω RDS(on), TO-220FP package, lower Qg (36 nC) | Higher voltage rating suits 400 V PFC stages; smaller gate charge eases drive in space-constrained designs | Prefer when higher voltage margin or lower drive power is required; not drop-in due to different package and pinout |
| IXTP12N50D2 | 500 V VDS, 0.55 Ω RDS(on), TO-220 package, ultra-low Qrr (0.25 µC) | Optimized for high-voltage, low-diode-recovery-loss applications like resonant LLC secondaries | Choose when minimizing body diode reverse recovery loss is critical; trade-off is higher conduction loss |
Compared with STP20NM50FP and IXTP12N50D2, the IRF644NSTRLPBF offers superior thermal performance in surface-mount form (RthJC = 1.0 °C/W vs. ≥1.5 °C/W for TO-220 variants) and higher avalanche energy tolerance - making it preferred for high-reliability, high-current, PCB-mounted power stages where thermal management dominates.
Availability
IRF644NSTRLPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive auxiliary load switches, and motor drive half-bridges requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IRF644NSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF644NSTRLPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-current, high-temperature switching in power conversion systems where ruggedness, low RDS(on), and repeatable avalanche performance are essential.
FAQ
What is the maximum continuous drain current for IRF644NSTRLPBF at 100 °C case temperature?
The IRF644NSTRLPBF supports 9.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 14 A rating at 25 °C and is validated for sustained operation with proper heatsinking or PCB copper area in the D2PAK package.
Does IRF644NSTRLPBF have a fully rated avalanche capability, and what is the energy limit?
Yes, the IRF644NSTRLPBF is fully avalanche rated with a single-pulse avalanche energy (EAS) of 180 mJ, tested under defined conditions (L = 5.0 µH, IAS = 8.4 A, TJ starting at 25 °C). This rating is confirmed in the datasheet's Absolute Maximum Ratings section and enables reliable operation in inductive switching circuits without external clamping.
What is the gate threshold voltage range for IRF644NSTRLPBF, and how does it affect drive requirements?
The IRF644NSTRLPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA. This allows compatibility with standard 5 V and 10 V logic-level gate drivers, but full enhancement requires VGS ≥ 10 V to achieve the specified 0.240 Ω RDS(on). The IRF644NSTRLPBF is not a logic-level MOSFET and requires adequate gate drive voltage to minimize conduction losses.
Is IRF644NSTRLPBF RoHS compliant, and what does the 'PbF' suffix indicate?
Yes, IRF644NSTRLPBF is RoHS compliant. The 'PbF' suffix explicitly denotes lead-free terminations meeting EU Directive 2011/65/EU. The device uses SnAgCu solder-compatible plating and is qualified for standard lead-free reflow profiles with peak temperatures up to 260 °C, as documented in Vishay's packaging specifications.
What is the typical reverse recovery time (trr) of the body diode in IRF644NSTRLPBF?
The body diode of the IRF644NSTRLPBF has a typical reverse recovery time (trr) of 165 ns, measured at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. This parameter is critical for synchronous rectification and half-bridge operation, and the datasheet specifies a maximum trr of 250 ns under the same conditions.
IRF644NSTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF644NSTRLPBF FAQ
1.How can I place an order for IRF644NSTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644NSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644NSTRLPBF reliable?
The price and inventory of IRF644NSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NSTRLPBF is usually 5 days.
3.What payment methods are accepted for IRF644NSTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NSTRLPBF transactions.
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4.How is shipping managed for IRF644NSTRLPBF?
IRF644NSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644NSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644NSTRLPBF?
For technical support, including IRF644NSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NSTRLPBF requirements.
6.How does Aetrix verify that IRF644NSTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF644NSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NSTRLPBF meets industry standards.
7.What is the process for return or replacement of IRF644NSTRLPBF?
All IRF644NSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NSTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644NSTRLPBF part is unused and in its original packaging.
Return procedure for IRF644NSTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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