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Vishay Siliconix IRF644NSTRR
- Part No.:
- IRF644NSTRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF644NSTRR.pdf
- Description:
- MOSFET N-CH 250V 14A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,612
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Product details
Overview
IRF644NSTRR from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.240 Ω RDS(on) at VGS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature. It delivers rugged avalanche performance (180 mJ single-pulse EAS) and fast switching for high-efficiency DC-DC converters and motor control circuits.
For engineers reviewing the IRF644NSTRR datasheet, IRF644NSTRR pinout, IRF644NSTRR application, or IRF644NSTRR equivalent, this page provides verified package mapping, validated thermal and switching parameters, confirmed TO-263 pin configuration, and two field-tested alternative parts with documented functional trade-offs.
Technical Context
This fifth-generation Power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust dynamic dV/dt rating (7.9 V/ns) and full unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (1060 pF Ciss) support simple drive requirements and ease of paralleling in high-current designs.
The device integrates a fast-recovery body diode (trr = 165–250 ns, Qrr = 1.0–1.6 µC) and is rated for repetitive avalanche energy (15 mJ), enabling reliable operation in hard-switched topologies without external snubbers. Thermal resistance from junction-to-case is 1.0 °C/W, optimized for heatsink-mounted D2PAK applications up to 150 W dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 200 V bus designs with 25 % safety margin against transients |
| RDS(on) | 0.240 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 8.4 A continuous drain current |
| Qg | 54 nC - determines gate driver power requirement and switching speed in hard-switched converters |
| EAS | 180 mJ - allows safe operation under unclamped inductive load conditions without external protection |
| TJ(max) | 175 °C - permits high-temperature ambient operation in enclosed industrial enclosures |
| Ciss | 1060 pF - impacts high-frequency gate drive loop stability and EMI filtering design |
| ID (TC = 100 °C) | 9.9 A - defines usable current derating for surface-mount PCB thermal management |
Pinout & Package
D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; standard 3-pin surface-mount footprint compatible with automated assembly and heatsink mounting via backside thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; threshold range 2.0–4.0 V enables compatibility with microcontroller GPIOs |
| D (Drain) | High-side power output | Exposed metal tab connects directly to PCB copper pour or heatsink; carries full load current and dissipates heat |
| S (Source) | Power return reference | Provides low-inductance return path; internal source inductance LS = 7.5 nH affects diode recovery behavior |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 180 mJ single-pulse EAS eliminates need for external clamping in inductive switching circuits |
| Dynamic dV/dt rating | 7.9 V/ns immunity prevents false turn-on during high-speed voltage transients |
| Low RDS(on) × Qg figure-of-merit | 12.96 Ω·nC - balances conduction and switching losses for mid-frequency SMPS (50–200 kHz) |
| Fast body diode recovery | trr = 165–250 ns with Qrr = 1.0–1.6 µC - reduces reverse recovery losses in synchronous rectification |
| Lead (Pb)-free RoHS-compliant | Meets JEDEC J-STD-020 reflow profile; qualified for lead-free soldering at 300 °C peak for 10 s |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: 200 V input, 50–100 kHz flyback or forward converter operating at 8–12 A peak current. IC Role / Device Role / Timing Role: Main power switch handling primary-side energy transfer; operates in hard-switched mode with controlled dV/dt. Use Value: 0.240 Ω RDS(on) limits conduction loss to ≤2.4 W at 10 A, while 54 nC Qg enables efficient gate drive with <1 W driver dissipation. |
Use Scenario: 24–48 V brushed motor control in industrial actuators requiring bidirectional PWM at 10–20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor voltage polarity; body diode conducts freewheeling current during off-time. Use Value: 165–250 ns trr and low Qrr minimize shoot-through risk and reduce switching losses during commutation. |
| AC-DC PFC Boost Switch | Industrial Solenoid Driver |
Use Scenario: Active PFC stage in 500–1000 W server PSU, switching at 65–135 kHz with 12 A peak inductor current. IC Role / Device Role / Timing Role: Boost switch managing high-current, high-voltage transitions; subjected to repetitive avalanche stress during zero-crossing events. Use Value: 15 mJ repetitive avalanche rating ensures reliability across line cycles without degradation under typical PFC stress profiles. |
Use Scenario: 24 V/12 A solenoid actuation in factory automation valves, driven by 100 Hz PWM with fast turn-off requirements. IC Role / Device Role / Timing Role: High-current switching element absorbing inductive kickback; body diode handles reverse recovery during de-energization. Use Value: 175 °C TJ(max) and 1.0 °C/W RthJC allow sustained 14 A pulsed operation with minimal heatsink volume in space-constrained panels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 20 A ID, 0.23 Ω RDS(on), TO-220FP package, higher Qg (72 nC) | Higher voltage rating suits 400 V AC-DC inputs; larger package increases thermal mass but limits surface-mount density | Choose STP20NM50FP when >300 V blocking is required and through-hole assembly is acceptable |
| IXTP12N25P | 250 V VDS, 12 A ID, 0.25 Ω RDS(on), TO-220 package, lower Qg (32 nC), no avalanche rating | Lower gate charge improves high-frequency efficiency but lacks EAS specification for inductive loads | Choose IXTP12N25P for cost-sensitive, non-avalanche-critical 250 V switching where gate drive power is constrained |
Compared with STP20NM50FP and IXTP12N25P, the IRF644NSTRR offers optimal balance of 250 V rating, D2PAK surface-mount compatibility, verified 180 mJ avalanche capability, and moderate Qg-making it preferred for space-constrained, thermally demanding industrial DC-DC and motor drives where reliability under transient stress is mandatory.
Availability
IRF644NSTRR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and industrial solenoid control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IRF644NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF644NSTRR belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-efficiency, high-ruggedness switching in commercial and industrial power conversion systems where thermal performance and avalanche survivability are critical.
FAQ
What is the maximum continuous drain current for IRF644NSTRR at 100 °C case temperature?
The IRF644NSTRR supports 9.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsink conditions and must be applied when designing for sustained high-temperature operation. The IRF644NSTRR datasheet confirms this value with linear derating beyond 100 °C.
Does IRF644NSTRR have a fully rated avalanche capability, and what is its single-pulse energy limit?
Yes, the IRF644NSTRR is fully avalanche rated with a single-pulse avalanche energy (EAS) of 180 mJ, tested under standardized unclamped inductive switching conditions (L = 5.0 µH, IAS = 8.4 A). This rating is explicitly confirmed in the Absolute Maximum Ratings section and enables reliable operation in circuits subject to inductive load transients without external protection. The IRF644NSTRR specification sheet documents this as a guaranteed parameter.
What is the gate threshold voltage range for IRF644NSTRR, and how does it affect drive compatibility?
The IRF644NSTRR has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA, allowing reliable turn-on with standard 5 V or 10 V logic-level drivers. This wide threshold ensures robust operation across process and temperature variation, and supports direct interface with microcontrollers and gate drivers without level-shifting. The IRF644NSTRR datasheet specifies this range under TJ = 25 °C conditions.
Is IRF644NSTRR RoHS-compliant, and what is its peak reflow temperature rating?
Yes, the IRF644NSTRR is RoHS-compliant and qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. Its Pb-free terminations meet JEDEC J-STD-020 requirements, and the device is marked "PbF" in ordering codes. The IRF644NSTRR documentation confirms full compliance with exemption clauses for high-melting-point alloys.
What is the body diode reverse recovery time (trr) of IRF644NSTRR, and why does it matter in motor drive applications?
The IRF644NSTRR body diode exhibits a reverse recovery time (trr) of 165–250 ns at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. In brushed DC motor drivers, this fast recovery minimizes cross-conduction losses during PWM dead-time and reduces electromagnetic interference caused by slow diode turn-off. The IRF644NSTRR datasheet provides measured trr values across temperature and current conditions.
IRF644NSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF644NSTRR FAQ
1.How can I place an order for IRF644NSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644NSTRR reliable?
The price and inventory of IRF644NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NSTRR is usually 5 days.
3.What payment methods are accepted for IRF644NSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644NSTRR?
IRF644NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644NSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644NSTRR?
For technical support, including IRF644NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NSTRR requirements.
6.How does Aetrix verify that IRF644NSTRR is sourced from the original manufacturer or authorized distributors?
All IRF644NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NSTRR meets industry standards.
7.What is the process for return or replacement of IRF644NSTRR?
All IRF644NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644NSTRR part is unused and in its original packaging.
Return procedure for IRF644NSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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