Vishay Siliconix IRF644STRLPBF
- Part No.:
- IRF644STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF644STRLPBF.pdf
- Description:
- MOSFET N-CH 250V 14A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,253
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Product details
Overview
IRF644STRLPBF from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 0.28 Ω RDS(on) at VGS = 10 V, 68 nC total gate charge, and repetitive avalanche rating-designed for high-current DC-DC converters, motor drives, and industrial power switching.
For engineers reviewing the IRF644STRLPBF datasheet, IRF644STRLPBF pinout, IRF644STRLPBF application, or IRF644STRLPBF equivalent, key selection criteria include its 250 V VDS, 125 W TC power dissipation, 1.0 °C/W junction-to-case thermal resistance, and suitability for unclamped inductive switching with 550 mJ single-pulse avalanche energy.
Technical Context
This device is a third-generation planar VDMOS power MOSFET optimized for ruggedness and fast switching in hard-switched topologies. Its design incorporates dynamic dv/dt immunity (4.8 V/ns), low gate-drain charge (35 nC), and integrated body diode with 250–500 ns reverse recovery time and 2.3–4.6 μC Qrr.
The IRF644STRLPBF operates with gate threshold voltage of 2.0–4.0 V and supports simple drive requirements due to low input capacitance (1300 pF Ciss) and 0.3–1.2 Ω gate input resistance. It is rated for continuous operation from –55 °C to +150 °C junction temperature and qualified for PCB-mount thermal performance up to 3.1 W at TA = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports primary-side switching in offline SMPS up to 200 V DC bus with margin |
| RDS(on) | 0.28 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 8.4 A continuous drain current |
| Qg | 68 nC - determines gate driver current requirement (~1.4 A peak for 50 ns turn-on) |
| ID (TC = 25 °C) | 14 A - defines maximum continuous current with heatsink at case temperature ≤25 °C |
| EAS | 550 mJ - allows safe operation in unclamped inductive load switching without snubber |
| RthJC | 1.0 °C/W - enables direct thermal path to heatsink; 125 W power dissipation achievable with ≤125 °C ΔT |
| trr / Qrr | 250–500 ns / 2.3–4.6 μC - impacts commutation losses and EMI in synchronous rectification |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free construction per JEDEC TO-263AB outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires 10 V for full enhancement; ±20 V absolute max rating |
| D | Drain | Main power output; electrically and thermally connected to exposed copper pad |
| S | Source | Power return and reference node; internal connection to body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 13 mJ per pulse - enables reliable operation under transient overloads without derating |
| Dynamic dv/dt immunity | 4.8 V/ns - suppresses false turn-on in high-noise bridge configurations |
| Fast switching | 11 ns td(on), 24 ns tr, 53 ns td(off), 49 ns tf - reduces switching losses in 50–200 kHz converters |
| Low RDS(on) × Qg figure of merit | 19.0 Ω·nC - balances conduction and switching loss trade-off for medium-frequency power stages |
| PCB-mount power capability | 3.1 W @ TA = 25 °C - supports compact designs without external heatsink in low-power applications |
Applications
| Industrial Motor Drives | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Driving 12–24 V brushed DC motors in PLC I/O modules and actuator controllers. IC Role / Device Role / Timing Role: High-side or half-bridge switch controlling motor direction and PWM speed regulation. Use Value: 14 A continuous current and 56 A pulsed rating support stall-tolerant motor control; avalanche rating handles back-EMF transients. | Use Scenario: Primary-side switch in isolated 200 W flyback or forward converter for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz with unclamped inductive turn-off. Use Value: 550 mJ EAS eliminates need for clamping circuits; 0.28 Ω RDS(on) maintains >88% efficiency at full load. |
| AC-DC PFC Stage | High-Voltage LED Driver |
Use Scenario: Boost switch in active PFC front-end for 300–400 W industrial lighting and UPS systems. IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch handling 375 V DC link with 50 kHz switching. Use Value: 250 V VDS provides 25% margin above 305 V RMS line; 4.8 V/ns dv/dt rating prevents spurious turn-on during zero-crossing. | Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting and signage. IC Role / Device Role / Timing Role: Series-pass element regulating current through 40–80 V LED arrays. Use Value: Low Qgd/Qgs ratio (35/11 ≈ 3.2) improves controllability in analog dimming; 150 °C TJ(max) supports sealed outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF644STRL-GE3 | Identical silicon die and specs; same D2PAK package but RoHS-compliant (lead-free terminations) | No functional difference; preferred where Pb-free compliance is mandatory | Select IRF644STRLPBF only when legacy Pb-based assembly is required |
| IRF640NPbF | Lower 200 V VDS, higher 0.18 Ω RDS(on), 39 nC Qg; TO-220 package | Limited to ≤160 V DC bus; unsuitable for 250 V avalanche-safe designs | Use only in cost-sensitive, lower-voltage (<180 V) applications where thermal mounting differs |
Compared with SiHF644STRL-GE3, IRF644STRLPBF shares identical electrical performance but differs in termination finish; versus IRF640NPbF, IRF644STRLPBF offers 50 V higher blocking voltage and 4× higher avalanche energy-critical for industrial inductive loads.
Availability
IRF644STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and high-voltage LED drivers requiring stable component supply across multi-year production cycles.
Supply support for IRF644STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF644S family delivers ruggedized, surface-mount power switching solutions optimized for high-current, medium-voltage applications demanding repetitive avalanche capability and stable parametric performance over temperature.
FAQ
What is the maximum continuous drain current for IRF644STRLPBF at 100 °C case temperature?
The IRF644STRLPBF supports 8.5 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the –55 °C to +150 °C operating range. At TC = 25 °C, the rating increases to 14 A. Designers must verify PCB copper area and heatsinking to maintain safe TC under load.
Does IRF644STRLPBF have a built-in body diode, and what are its key parameters?
Yes, IRF644STRLPBF integrates a fast-recovery body diode rated for 14 A continuous source-drain current. Key parameters include VSD = 1.8 V at IS = 14 A and TJ = 25 °C, reverse recovery time (trr) of 250–500 ns, and reverse recovery charge (Qrr) of 2.3–4.6 μC. These values are measured under specified conditions (IF = 7.9 A, di/dt = 100 A/μs) and impact efficiency in synchronous or freewheeling configurations.
What is the gate threshold voltage range for IRF644STRLPBF, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for IRF644STRLPBF is 2.0–4.0 V at ID = 250 μA. This range indicates the minimum gate voltage needed to begin channel conduction. For reliable enhancement, drive circuits must deliver ≥10 V to achieve the specified 0.28 Ω RDS(on). Logic-level drivers (e.g., 3.3 V or 5 V) will not fully turn on IRF644STRLPBF and result in excessive conduction loss.
Can IRF644STRLPBF be paralleled with other devices, and what design considerations apply?
Yes, IRF644STRLPBF is designed for ease of paralleling, as confirmed by Vishay's datasheet features. Key considerations include matched gate drive impedance (to ensure simultaneous turn-on), symmetrical PCB layout with equal trace lengths, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling between devices must also be managed to prevent current imbalance due to positive temperature coefficient of RDS(on).
What is the thermal resistance from junction to case (RthJC) for IRF644STRLPBF, and how is it used in thermal design?
The maximum junction-to-case thermal resistance (RthJC) for IRF644STRLPBF is 1.0 °C/W. This value is used to calculate the temperature rise from junction to heatsink interface: ΔT = PD × RthJC. For example, at 100 W dissipation, junction-to-case rise is 100 °C. Combined with heatsink RthCA and ambient temperature, this determines whether the 150 °C maximum junction temperature is exceeded. The exposed drain pad must be soldered to a large copper area for effective heat transfer.
IRF644STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF644STRLPBF FAQ
1.How can I place an order for IRF644STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644STRLPBF reliable?
The price and inventory of IRF644STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF644STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644STRLPBF?
IRF644STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644STRLPBF?
For technical support, including IRF644STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644STRLPBF requirements.
6.How does Aetrix verify that IRF644STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF644STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF644STRLPBF?
All IRF644STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644STRLPBF part is unused and in its original packaging.
Return procedure for IRF644STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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