Vishay Siliconix IRF644STRRPBF
- Part No.:
- IRF644STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF644STRRPBF.pdf
- Description:
- MOSFET N-CH 250V 14A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:605
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Product details
Overview
IRF644STRRPBF from Vishay Siliconix is a 250 V, 14 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.28 Ω RDS(on) at VGS = 10 V, 68 nC total gate charge, and repetitive avalanche rating-designed for high-current DC-DC converters, motor control stages, and industrial power supplies.
For engineers reviewing the IRF644STRRPBF datasheet, IRF644STRRPBF pinout, IRF644STRRPBF application, or IRF644STRRPBF equivalent, this part supports fast-switching, rugged unclamped inductive switching, and parallel operation with low gate drive requirements-key considerations for high-reliability power stage design.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for low conduction loss and robust avalanche performance. Its dynamic dv/dt rating of 4.8 V/ns and 550 mJ single-pulse avalanche energy enable stable operation in hard-switched topologies with inductive loads.
The device integrates an intrinsic body diode with 1.8 V forward voltage at 14 A and 250–500 ns reverse recovery time, supporting synchronous rectification and freewheeling functions without external diodes in many medium-voltage applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Maximum blocking voltage for use in 200 V bus systems with safety margin |
| RDS(on) | 0.28 Ω @ VGS = 10 V - Enables ≤3.9 W conduction loss at 14 A continuous drain current |
| Qg | 68 nC - Determines gate driver power requirement and switching speed in hard-switched circuits |
| ID (TC = 25 °C) | 14 A - Continuous current capability when mounted on heatsink; derates to 8.5 A at 100 °C case |
| EAS | 550 mJ - Supports reliable unclamped inductive switching without external snubbers |
| TJ Range | −55 to +150 °C - Qualified for industrial and extended-temperature embedded power systems |
| RthJC | 1.0 °C/W - Enables efficient thermal path to heatsink; critical for high-power density layout |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB mounting and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V drive; low input capacitance (1300 pF Ciss) eases driver selection |
| Pin 2 (D) | Drain | Main high-side power terminal; electrically and thermally connected to exposed backside metal pad |
| Pin 3 (S) | Source | Power return and gate reference node; internal source inductance (7.5 nH) affects high-speed switching behavior |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 13 mJ per pulse - Enables robust operation under transient overloads without derating |
| Dynamic dv/dt immunity | 4.8 V/ns - Reduces risk of false turn-on in high-noise bridge configurations |
| Fast switching | td(on) = 11 ns, tf = 49 ns - Supports >100 kHz switching in SMPS with low switching loss |
| Low gate charge | Qgs = 11 nC, Qgd = 35 nC - Minimizes Miller plateau duration and improves controllability |
| Surface-mount packaging | D2PAK footprint - Delivers 125 W power dissipation with standard reflow profiles and no through-hole constraints |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
|
Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers. IC Role / Device Role / Timing Role: High-side N-channel switch handling 10–14 A peak load current with PWM up to 20 kHz. Use Value: Low RDS(on) and avalanche rating eliminate need for external clamping in inductive kickback events. |
Use Scenario: Primary-side switch in isolated flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 200 V input bus. Use Value: 550 mJ EAS ensures safe operation during output short-circuit or transformer saturation events. |
| Uninterruptible Power Supplies | LED Constant-Current Drivers |
|
Use Scenario: Battery-charging FET and inverter H-bridge in 12/24 V offline UPS units. IC Role / Device Role / Timing Role: Bidirectional switching element managing battery-to-bus and bus-to-inverter paths. Use Value: Repetitive avalanche capability sustains reliability during frequent AC line dropouts and load transients. |
Use Scenario: Series-pass switch in high-power constant-current LED drivers for street lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator dissipating up to 30 W continuously. Use Value: 1.0 °C/W RthJC enables direct heatsink mounting for stable thermal management at 14 A DC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 20 A ID, 0.23 Ω RDS(on), TO-220FP package | Higher voltage rating but through-hole mounting; lower thermal resistance to ambient via heatsink | Prefer when board space allows through-hole heatsinking and 500 V isolation is required |
| IXTP12N25P | 250 V VDS, 12 A ID, 0.27 Ω RDS(on), TO-220 package, no avalanche rating | Similar voltage/current but lacks repetitive avalanche spec and surface-mount compatibility | Consider only for cost-sensitive, non-avalanche-critical linear or low-duty-cycle switching roles |
Compared with IRF644STRRPBF, STP20NM50FP offers higher voltage headroom and higher current but requires PCB real estate for TO-220 mounting, while IXTP12N25P trades avalanche ruggedness and SMT compatibility for lower gate charge and legacy package familiarity-neither is pin-compatible, and both demand layout revision.
Availability
IRF644STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF644STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF644STRRPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for ruggedized switching in high-current, medium-voltage power stages where avalanche tolerance and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for IRF644STRRPBF at 100 °C case temperature?
The IRF644STRRPBF supports 8.5 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures junction temperature remains within −55 to +150 °C operational range under sustained load conditions. Designers must verify heatsink interface and PCB copper area to maintain this rating in actual layouts.
Does IRF644STRRPBF have avalanche capability, and how is it rated?
Yes, IRF644STRRPBF is repetitively avalanche rated with 13 mJ per pulse (EAR) and 550 mJ single-pulse energy (EAS). These values are measured under defined test conditions (VDD = 50 V, L = 4.5 mH, IAS = 14 A), confirming suitability for inductive switching without external protection. The device's ruggedized die design enables reliable operation in hard-switched topologies where voltage overshoot occurs.
What is the gate threshold voltage range for IRF644STRRPBF?
The gate-source threshold voltage (VGS(th)) for IRF644STRRPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates the minimum gate voltage needed to begin channel conduction. Full enhancement requires ≥10 V drive to achieve the rated 0.28 Ω RDS(on); logic-level gate drivers are not sufficient without level-shifting.
Can IRF644STRRPBF be paralleled with identical units, and what design considerations apply?
Yes, IRF644STRRPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Key considerations include matched gate drive impedance (<5 Ω per device), symmetrical PCB layout with equal trace lengths, and shared thermal mass to minimize thermal imbalance. The datasheet confirms this capability as a key feature for high-current system scaling.
What is the body diode forward voltage of IRF644STRRPBF at 14 A and 25 °C?
The body diode forward voltage (VSD) of IRF644STRRPBF is rated at ≤1.8 V at IS = 14 A and TJ = 25 °C with VGS = 0 V. This parameter defines conduction loss during freewheeling or synchronous rectification phases. At elevated temperatures, VSD decreases slightly, but designers should account for reverse recovery charge (Qrr = 2.3–4.6 μC) in snubber and EMI calculations.
IRF644STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF644STRRPBF FAQ
1.How can I place an order for IRF644STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644STRRPBF reliable?
The price and inventory of IRF644STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF644STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644STRRPBF?
IRF644STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644STRRPBF?
For technical support, including IRF644STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644STRRPBF requirements.
6.How does Aetrix verify that IRF644STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF644STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF644STRRPBF?
All IRF644STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644STRRPBF part is unused and in its original packaging.
Return procedure for IRF644STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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