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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6623TRPBF

Name: IRF6623TRPBF
Brand: Infineon Technologies
SKU: IRF6623TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6623TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6623TRPBF.pdf

Description:: MOSFET N-CH 20V 16A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6623TRPBF from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode Power MOSFET in DirectFET® ST package, optimized for synchronous buck control FETs in CPU core DC-DC converters. It delivers 5.7 mΩ R_DS(on) @ V_GS = 10 V, 9.7 mΩ @ 4.5 V, 11 nC total gate charge, 0.7 mm profile, and dual-sided cooling capability.

For engineers reviewing the IRF6623TRPBF datasheet, IRF6623TRPBF pinout, IRF6623TRPBF application, or IRF6623TRPBF equivalent, key selection criteria include low-profile thermal performance in high-frequency 12 V input converters, gate charge vs. conduction loss trade-off at 4.5 V drive, and compatibility with existing MICRO-8 footprint layouts per AN-1035.

Technical Context

This MOSFET employs trench-gate HEXFET silicon on a copper substrate DirectFET ST package, enabling ultra-low package inductance (<1 nH) and 80% lower junction-to-PCB thermal resistance (R_θJ-PCB = 1.0 °C/W) versus QFN alternatives. Its 1.4–2.2 V gate threshold and -5.4 mV/°C tempco support stable 4.5 V logic-level drive across temperature.

The device is characterized for clamped inductive switching at 12 A, 16 V, with 12–18 nC reverse recovery charge (Q_rr) and 20–30 ns trr - critical for minimizing body diode losses in high-side synchronous rectification. R_DS(on) remains ≤7.5 mΩ up to T_J = 125°C, ensuring predictable conduction loss in thermally constrained VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum bus voltage rating for 12 V input DC-DC stages with margin against transients.
R_DS(on) max @ 10 V	5.7 mΩ - Enables <1 W conduction loss at 15 A in control FET position of multiphase CPU VRMs.
R_DS(on) max @ 4.5 V	9.7 mΩ - Supports efficient operation with 4.5 V gate drive from integrated controller outputs.
Q_g typ.	11 nC - Balances fast switching (t_r = 40 ns, t_f = 4.5 ns) against driver power dissipation.
R_θJ-PCB	1.0 °C/W - Achieves dual-sided cooling via top-drain and bottom-source copper pads, reducing hotspot ΔT.
C_iss	1360 pF - Low input capacitance minimizes Miller effect during high dv/dt transitions in synchronous buck.
E_AS	160 mJ - Withstands unclamped inductive energy during startup/fault without avalanche failure.

Pinout & Package

IRF6623TRPBF uses the DirectFET® ST (Small Size Can, T-Designation) package: 4.8 × 3.8 × 0.7 mm, copper substrate, top-side drain and bottom-side source/gate terminals. Compatible with MICRO-8 PCB footprints and vapor-phase reflow per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary heat path to heatsink or thermal plane; electrically connects to V_IN node in high-side switch.
Bottom Left Pad	Source (S)	Low-inductance return path to power ground; forms part of current loop with gate driver output.
Bottom Right Pad	Gate (G)	Control terminal with 11 nC total charge; requires <1 Ω series resistance to damp ringing in 1–2 MHz switching.

Key Features

Feature	Design Value
Dual-sided cooling interface	Top-drain + bottom-source copper pads enable simultaneous thermal transfer to PCB and heatsink, lowering peak junction temperature by >20°C vs. single-sided packages.
Ultra-low package inductance	<1 nH parasitic inductance reduces voltage overshoot during turn-off, easing EMI filter design in >500 kHz VRMs.
Optimized for 4.5 V drive	9.7 mΩ R_DS(on) at 4.5 V ensures <1.5 W conduction loss at 12 A - critical for controller-integrated gate drivers.
High C_dv/dt immunity	Rated for >50 V/ns dV/dt - prevents false turn-on in high-side configuration during fast switching transitions.
RoHS-compliant lead-free	Qualified for 260°C reflow; compatible with standard SMT assembly lines without process modification.

Applications

Server CPU Voltage Regulator

Laptop Core Power Supply

Use Scenario: High-current, multi-phase buck converter delivering 1–2 V @ 100+ A to Intel/AMD processors.

IC Role / Device Role / Timing Role: Control FET in high-side switching position; switched at 300–1000 kHz with precise dead-time control.

Use Value: 5.7 mΩ R_DS(on) and 11 nC Q_g minimize combined conduction + switching loss, improving full-load efficiency by ≥1.2% over prior-generation MOSFETs.

Use Scenario: Thin-profile notebook VRM where board height <1.0 mm constrains component selection.

IC Role / Device Role / Timing Role: Primary high-side switch in compact 2-phase 12 V → 1.2 V converter with integrated controller.

Use Value: 0.7 mm profile enables stacking under heat spreaders; dual-sided cooling maintains T_J < 105°C at 40 A continuous.

GPU Core Power Delivery

AI Accelerator VRM

Use Scenario: Transient-heavy GPU power rail requiring fast response to dynamic load steps >50 A/µs.

IC Role / Device Role / Timing Role: Control FET handling peak currents up to 120 A pulsed; body diode conducts during low-side conduction phase.

Use Value: 120 A pulsed drain rating and 12–18 nC Q_rr reduce body diode loss during forced continuous conduction mode (FCCM).

Use Scenario: Multi-rail AI chip supply with strict thermal density limits in 1U server chassis.

IC Role / Device Role / Timing Role: High-efficiency control FET in 48 V → 0.8 V intermediate bus converter feeding point-of-load regulators.

Use Value: 1.0 °C/W R_θJ-PCB allows direct mounting to copper thermal vias, reducing system-level thermal resistance by 35% vs. SO-8.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous buck control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6614TRPBF	Higher R_DS(on) (7.0 mΩ @ 10 V), same Q_g (11 nC), identical DirectFET ST package.	Suitable for cost-sensitive designs where 0.5–1.0% efficiency loss is acceptable.	Select when thermal margin exists and BOM cost reduction outweighs efficiency gain.
SiR626DP-T1-GE3	Lower R_DS(on) (4.0 mΩ @ 10 V), higher Q_g (16 nC), PowerPAK® 1212-8 package (1.2 mm height).	Better conduction loss but larger footprint and height; requires layout revision.	Choose only if board space permits taller profile and efficiency gain justifies redesign effort.

Compared with IRF6614TRPBF, IRF6623TRPBF delivers 1.3 mΩ lower R_DS(on) at no Q_g penalty; versus SiR626DP, it trades 2.7 mΩ higher R_DS(on) for 0.5 mm lower profile and MICRO-8 layout compatibility - critical for space-constrained VRMs.

Availability

IRF6623TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, laptop core power supplies, and GPU power delivery systems requiring stable component supply and long-term industrial availability.

Supply support for IRF6623TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The DirectFET® product line was developed specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure, emphasizing thermal performance, low inductance, and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6623TRPBF supports 12 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board, double-sided cooling). This rating assumes R_θJA = 20 °C/W and T_J(max) = 150°C, yielding 80°C allowable rise above ambient.

Is IRF6623TRPBF pin-compatible with standard MICRO-8 footprints?

Yes - the DirectFET ST outline matches the pad layout and solder mask geometry of MICRO-8 packages. Layout compatibility is confirmed in AN-1035, including stencil aperture recommendations and substrate copper thickness guidelines for optimal thermal transfer.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to 10 V gate drive. Gate threshold is 1.4–2.2 V, and gate oxide is rated for ±20 V; applying negative voltage offers no benefit and risks violating absolute maximum ratings.

Can IRF6623TRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (15 mV/°C V_BR drift, normalized R_DS(on) increase with T_J) enables inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB routing to minimize loop inductance imbalance.

IRF6623TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6623TRPBF FAQ

1.How can I place an order for IRF6623TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6623TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6623TRPBF reliable?

The price and inventory of IRF6623TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6623TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6623TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6623TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6623TRPBF?

IRF6623TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6623TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6623TRPBF?

For technical support, including IRF6623TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6623TRPBF requirements.

6.How does Aetrix verify that IRF6623TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6623TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6623TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6623TRPBF?

All IRF6623TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6623TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6623TRPBF part is unused and in its original packaging.

Return procedure for IRF6623TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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