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Infineon Technologies IRF6674TRPBF
- Part No.:
- IRF6674TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MZ
- Datasheet:
-
IRF6674TRPBF.pdf
- Description:
- MOSFET N-CH 60V 13.4A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:13,534
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Product details
Overview
IRF6674TRPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 13.4 A N-channel Power MOSFET in DirectFET® MZ package, optimized for primary-side switching in isolated DC-DC converters with 36–60 V input. It delivers 9.0 mΩ RDS(on) at VGS = 10 V, 24 nC total gate charge, and dual-sided cooling capability for high-efficiency forward/push-pull topologies.
For engineers reviewing the IRF6674TRPBF datasheet, IRF6674TRPBF pinout, IRF6674TRPBF application, or IRF6674TRPBF equivalent, key selection criteria include its low conduction loss, high dV/dt immunity, compatibility with standard SMT reflow (260°C), and thermal performance enabling >80% reduction in junction-to-case thermal resistance versus prior packages.
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET™ packaging-eliminating bond wires and using copper substrate for ultra-low inductance and dual-sided thermal interface. Its gate threshold voltage of 4.0 V (typ.) and negative temperature coefficient (−11 mV/°C) support stable operation across −40°C to +150°C junction range.
The device features 8.3 nC gate-to-drain charge (Qgd) and 10.2 nC switch charge (Qsw), enabling fast, low-loss switching in hard-switched isolated converters. Avalanche rating of 400 mJ (EAS) at IAS = 13.4 A supports robust unclamped inductive turn-off handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V max - supports 48 V nominal bus with 20% transient margin in telecom/server power supplies |
| RDS(on) | 9.0 mΩ @ 10 V - enables <1.2 W conduction loss at 13.4 A, critical for high-density converter efficiency |
| Qg | 24 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak drivers |
| Qgd | 8.3 nC - directly impacts Miller plateau duration and EMI during hard switching |
| RθJC | 1.4 °C/W - enables direct heatsink mounting on drain side, reducing thermal path by 80% vs. SO-8 |
| ID (TC = 25°C) | 134 A - defines safe continuous current under case-cooled conditions, not ambient-limited |
| EAS | 400 mJ - specifies single-pulse avalanche energy handling without failure, validated per JEDEC JESD24-1 |
Pinout & Package
IRF6674TRPBF uses the DirectFET® MZ outline-a copper-can, double-sided cooling package with footprint matching Micro8 but only 0.7 mm height. The package exposes drain on both top and bottom surfaces; gate and source are accessed via solder pads on the PCB side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Surface (Drain) | Drain (D) | Primary heat transfer surface; electrically connected to internal die drain; requires thermal pad on PCB or heatsink contact |
| Bottom Pad (Drain) | Drain (D) | Secondary thermal and electrical connection point-enables dual-sided cooling and reduces RθJA by up to 50% |
| Source Pad (S) | Source (S) | Low-inductance return path for load current; connects to PCB ground plane or source node |
| Gate Pad (G) | Gate (G) | Control terminal with 1.0 Ω intrinsic gate resistance; requires low-impedance driver trace to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET® MZ packaging | 0.7 mm profile with dual-sided drain cooling-reduces thermal resistance by 80% vs. SO-8 and eliminates bond wire inductance |
| Optimized for synchronous rectification | Low Qrr (36–54 nC) and fast trr (32–48 ns) minimize body diode conduction loss in secondary-side FETs |
| High dV/dt immunity | Rated for >50 V/ns-prevents false turn-on in high-frequency isolated topologies with steep voltage transients |
| Lead-free & RoHS compliant | Qualified for 260°C reflow per J-STD-020; no lead or halogen content; meets IPC/JEDEC standards |
| HEXFET® silicon process | Enhanced cell density and reduced specific on-resistance-delivers 9.0 mΩ in MZ footprint, 25% lower than comparable SO-8 devices |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 48 V input forward converter delivering 12 V/100 A to CPU core rails. IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with zero-voltage switching assistance. Use Value: 9.0 mΩ RDS(on) and 24 nC Qg reduce conduction and switching losses simultaneously, enabling >95% full-load efficiency. |
Use Scenario: Primary switch in multiphase interleaved push-pull converter for AI accelerator power delivery. IC Role / Device Role / Timing Role: Fast-turning, low-Qgd MOSFET synchronized to precise phase timing for ripple cancellation. Use Value: Dual-sided cooling maintains TJ < 105°C under 134 A pulsed current, avoiding derating in compact 1U chassis. |
| Industrial 36–60 V Power Supplies | EV Onboard Chargers (OBC) Auxiliary Stages |
Use Scenario: Isolated auxiliary supply powering gate drivers and controllers in motor inverters. IC Role / Device Role / Timing Role: Primary-side switch in flyback topology operating across wide ambient (−40°C to +85°C). Use Value: Stable VGS(th) (4.0 V typ., −11 mV/°C TC) ensures reliable turn-on across temperature without overdrive. |
Use Scenario: High-side switch in isolated DC-DC stage powering OBC control logic and communication interfaces. IC Role / Device Role / Timing Role: Hard-switched 600 kHz primary FET requiring robust avalanche capability during fault events. Use Value: 400 mJ EAS rating withstands repeated unclamped inductive spikes during OBC soft-start and fault recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-performance power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6662TRPBF | 60 V, 11.5 mΩ RDS(on), 20 nC Qg, same MZ package | Slightly higher conduction loss but lower gate charge-better for very high frequency (>1 MHz) operation | Prefer when switching loss dominates over conduction loss; verify thermal margin with 11.5 mΩ |
| Vishay SiR626DP | 60 V, 8.2 mΩ RDS(on), 27 nC Qg, PowerPAK® 8×8 package | Lower RDS(on) but single-sided cooling and 25% larger footprint-requires PCB redesign | Choose only if board space allows larger footprint and thermal design accommodates higher Qg-driven losses |
Compared with IRF6674TRPBF, IRF6662TRPBF trades 1.5 mΩ higher on-resistance for 4 nC lower gate charge-favorable in MHz-range resonant converters; SiR626DP offers lower RDS(on) but lacks dual-sided cooling and increases layout complexity.
Availability
IRF6674TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial 36–60 V power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IRF6674TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and packaging innovation for high-efficiency power conversion.
The IRF6674TRPBF belongs to Infineon's DirectFET® Power MOSFET product line-designed specifically for high-frequency, high-density isolated DC-DC converters where thermal performance and switching efficiency are critical system constraints.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF6674TRPBF supports 67 A continuous drain current at TC = 100°C, per the Absolute Maximum Ratings table. This value assumes proper PCB copper area (1 in² Cu), dual-sided cooling, and thermal interface material between case and heatsink. Derating curves in Figure 12 confirm linear reduction from 134 A at 25°C to 67 A at 100°C.
Is IRF6674TRPBF suitable for synchronous rectification on the secondary side?
Yes-the device's low Qrr (36–54 nC), fast trr (32–48 ns), and low VSD (1.3 V max) make it viable for secondary-side synchronous rectification in forward and LLC converters. However, its 60 V rating limits use to ≤24 V output stages unless operated with active clamp or ZVS techniques.
Does the DirectFET® MZ package require special stencil or reflow profiles?
Yes-application note AN-1035 specifies a 5-mil (0.13 mm) stencil thickness, 75% aperture ratio for drain pads, and peak reflow temperature of 260°C for 30 seconds. The copper substrate expands differently than FR4, so thermal profiling must avoid warpage-induced solder joint voiding.
How does the 1.4 °C/W RθJC translate to real-world thermal performance?
A 1.4 °C/W RθJC means that with 10 W dissipation and a 60°C heatsink, junction temperature rises only 14°C above heatsink temperature-resulting in TJ ≈ 74°C. This enables full 13.4 A continuous current without derating in well-designed systems, unlike SO-8 equivalents with RθJC > 6 °C/W.
IRF6674TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MZ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.4A (Ta), 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 13.4A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MZ
IRF6674TRPBF FAQ
1.How can I place an order for IRF6674TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6674TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6674TRPBF reliable?
The price and inventory of IRF6674TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6674TRPBF is usually 5 days.
3.What payment methods are accepted for IRF6674TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6674TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6674TRPBF?
IRF6674TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6674TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6674TRPBF?
For technical support, including IRF6674TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6674TRPBF requirements.
6.How does Aetrix verify that IRF6674TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6674TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6674TRPBF meets industry standards.
7.What is the process for return or replacement of IRF6674TRPBF?
All IRF6674TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6674TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6674TRPBF part is unused and in its original packaging.
Return procedure for IRF6674TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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