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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6785MTRPBF

Name: IRF6785MTRPBF
Brand: Infineon Technologies
SKU: IRF6785MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6785MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: IRF6785MTRPBF.pdf

Description:: MOSFET N-CH 200V 3.4A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6785MTRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 85 mΩ N-channel Power MOSFET in DirectFET^TM MZ package, optimized for Class-D audio amplifier half-bridge stages. It delivers ≤0.1% THD at 250 W/channel into 8 Ω, with 26 nC total gate charge, 190 nC body-diode reverse recovery charge, and dual-sided cooling capability for high-power density designs.

For engineers reviewing the IRF6785MTRPBF datasheet, IRF6785MTRPBF pinout, IRF6785MTRPBF application, or IRF6785MTRPBF equivalent, key selection criteria include R_DS(on) stability over temperature, Q_rr/Q_g ratio for EMI-sensitive switching, DirectFET thermal interface compatibility, and avalanche ruggedness in unclamped inductive turn-off.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized body diode dynamics to minimize reverse recovery-induced voltage spikes and cross-conduction losses in high-frequency Class-D output stages. Its low 3.0 Ω internal gate resistance and 140 pF effective output capacitance (C_oss,eff) support clean 300–500 kHz switching with reduced gate drive power and dv/dt-induced EMI.

The DirectFET MZ package integrates drain-connected copper can top and bottom, enabling simultaneous PCB-side and heatsink-side thermal conduction. Measured R_θJC = 1.4 °C/W and R_θJ-PCB = 1.4 °C/W confirm symmetrical heat extraction-critical for maintaining <150 °C junction temperature under sustained 250 W/channel operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports rail voltages up to ±90 V in bridged-tied-load (BTL) Class-D amplifiers without derating.
R_DS(on) @ V_GS = 10 V	85 mΩ typ. - Enables <0.7 W conduction loss per device at 4.2 A RMS, critical for >90% system efficiency.
Q_g	26 nC typ. - Reduces gate driver power dissipation and enables use of low-current, cost-effective gate drivers.
Q_rr	190 nC typ. - Low reverse recovery charge minimizes shoot-through risk and THD degradation during dead-time transitions.
t_r/t_f	8.6 ns / 14 ns - Fast edge rates support high PWM resolution while limiting switching loss to <1.2 W at 350 kHz.
E_AS	125 mJ - Withstands single-pulse avalanche energy up to 8.4 A in unclamped inductive switching, enhancing reliability.
R_θJC	1.4 °C/W - Enables direct thermal coupling to heatsink via top-drain can, reducing junction-to-case thermal resistance by 65% vs. SO-8.

Pinout & Package

IRF6785MTRPBF uses the DirectFET^TM MZ outline: a copper-can, top-and-bottom source-connected surface-mount package with no leads. The drain is exposed on both top and bottom metal surfaces; gate and source terminals are accessed via solder pads on the substrate perimeter.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain Can	Drain (high-side switch node)	Primary high-current path; thermally coupled to heatsink for dual-sided cooling and low-inductance return path.
Bottom Drain Can	Drain (low-side switch node)	Provides symmetric current return and thermal interface to PCB ground plane; reduces loop inductance by >50% vs. wirebonded packages.
Source Pad (S)	Source (common reference for gate drive)	Low-inductance connection point for gate driver return and current sensing; tied directly to PCB source trace.
Gate Pad (G)	Gate (control input)	High-impedance control terminal requiring <3.0 Ω series resistance to damp ringing; layout must minimize trace inductance.

Key Features

Feature	Design Value
DirectFET^TM MZ packaging	Eliminates bond wires, reducing package stray inductance to <0.5 nH-critical for suppressing voltage overshoot above 200 V rails.
Optimized body diode recovery	Q_rr = 190 nC and t_rr = 71 ns enable clean commutation in hard-switched half-bridges without snubbers.
Dual-sided thermal interface	Simultaneous top-can and bottom-can thermal contact achieves R_θJA = 12.5 °C/W on 1-in² Cu board-enabling 250 W/channel in compact enclosures.
Low R_DS(on) × Q_g figure-of-merit	2.22 Ω·nC - Balances conduction and switching loss for optimal efficiency across 200–500 kHz Class-D operating range.
RoHS-compliant lead-free construction	Qualified for 260 °C reflow; Pb-free plating ensures long-term solder joint integrity in high-thermal-cycling audio applications.

Applications

Class-D Audio Amplifier Output Stage

High-Fidelity Home Theater Receiver

Use Scenario: Half-bridge output stage driving 8 Ω loads at 350 kHz PWM frequency with ±85 V rails.

IC Role / Device Role / Timing Role: High-side and low-side switching element; synchronized switching with <100 ns dead time.

Use Value: Achieves <0.05% THD+N at full power due to matched Q_rr and fast t_f, eliminating need for external diode clamps.

Use Scenario: Dual-channel BTL amplifier delivering 250 W/channel into 4–8 Ω speakers with real-time DSP-based protection.

IC Role / Device Role / Timing Role: Primary power switch in discrete output stage; handles peak currents >30 A with <150 °C T_J.

Use Value: Dual-sided cooling maintains stable R_DS(on) across thermal cycles, ensuring consistent channel matching over 20,000-hour lifespan.

Professional PA System Power Module

Automotive Subwoofer Amplifier

Use Scenario: 400 W/channel rack-mount amplifier operating continuously at ambient up to 60 °C in enclosed cabinets.

IC Role / Device Role / Timing Role: Switching transistor in resonant LLC-assisted Class-D topology; supports burst-mode standby.

Use Value: R_θJC = 1.4 °C/W allows direct mounting to aluminum chassis, reducing heatsink mass by 40% vs. TO-220 solutions.

Use Scenario: Compact 300 W subwoofer amplifier mounted behind vehicle rear seat with limited airflow.

IC Role / Device Role / Timing Role: High-efficiency output switch handling 12–16 V battery input with boost-derived ±60 V rails.

Use Value: Low Q_g (26 nC) enables gate drive from integrated DC/DC controller, eliminating external level-shifters and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 0.065 Ω, TO-247 package; higher R_DS(on) × Q_g (3.9 Ω·nC), no dual-sided cooling.	Designed for SMPS, not optimized for audio THD; requires external snubber for <0.1% THD at 250 W.	Select only if 600 V rating is mandatory and thermal budget allows larger heatsink.
IXTP30N20X3	200 V, 0.042 Ω, TO-220FP; lower R_DS(on) but Q_rr = 320 nC and no DirectFET low-inductance structure.	Higher EMI in high-frequency Class-D due to slower t_f (35 ns) and bond-wire inductance; increases filter component count.	Prefer for cost-sensitive, lower-power (<100 W) designs where EMI filtering is less constrained.

Compared with STW48N60M2 and IXTP30N20X3, IRF6785MTRPBF uniquely combines low Q_rr, ultra-low package inductance, and dual thermal interfaces-making it the only option capable of 250 W/channel Class-D operation with <0.05% THD and no external snubbers or forced air cooling.

Availability

IRF6785MTRPBF is available at Aetrix Electronics and suitable for Class-D audio amplifier output stages, professional PA power modules, and automotive subwoofer amplifiers requiring stable component supply and long-lifecycle support.

Supply support for IRF6785MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in high-efficiency power devices and system-level solutions.

The IRF6785MTRPBF belongs to Infineon's DirectFET^TM audio-optimized MOSFET product line, engineered specifically to meet the stringent THD, EMI, and thermal demands of high-fidelity digital audio amplification.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRF6785MTRPBF supports 19 A continuous drain current at T_C = 70°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 27 A rating at 25°C case temperature, based on a linear derating factor of 0.022 W/°C and R_θJC = 1.4 °C/W. Operation above this current requires active cooling or reduced duty cycle.

Does the DirectFET MZ package require special PCB layout considerations?

Yes-the DirectFET MZ outline mandates symmetric copper pour on both top and bottom layers beneath the device, with thermal vias connecting to internal ground planes. Per AN-1035, the stencil aperture must match the substrate pad dimensions (6.25 × 4.80 mm), and solder paste volume must be controlled to avoid voiding in the drain-to-heatsink interface.

Can IRF6785MTRPBF be used in synchronous rectification applications?

No-it is not rated or characterized for synchronous rectification. Its body diode is optimized for Class-D commutation (low Q_rr, fast t_rr), not forward conduction efficiency. The device lacks guaranteed reverse recovery robustness under high di/dt synchronous rectifier conditions and has no specified FOM for SR use.

What is the gate threshold voltage range and its impact on drive circuit design?

V_GS(th) ranges from 3.0 V to 5.0 V at I_D = 100 µA. This wide spread necessitates gate drive voltages ≥12 V to ensure full enhancement across process variation and temperature extremes. Driving at exactly 10 V risks marginal turn-on at high temperature, increasing R_DS(on) and conduction loss unpredictably.

IRF6785MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 57W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MZ

IRF6785MTRPBF FAQ

1.How can I place an order for IRF6785MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6785MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6785MTRPBF reliable?

The price and inventory of IRF6785MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6785MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF6785MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6785MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6785MTRPBF?

IRF6785MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6785MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6785MTRPBF?

For technical support, including IRF6785MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6785MTRPBF requirements.

6.How does Aetrix verify that IRF6785MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6785MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6785MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF6785MTRPBF?

All IRF6785MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6785MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6785MTRPBF part is unused and in its original packaging.

Return procedure for IRF6785MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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