Vishay Siliconix IRF710L

Overview

IRF710L from Vishay Siliconix is a 400 V, 2.0 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in offline SMPS, AC-DC adapters, and lamp ballasts. It features 3.6 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 120 mJ single-pulse avalanche energy - enabling robust unclamped inductive switching in flyback and forward converters.

For engineers reviewing the IRF710L datasheet, IRF710L pinout, IRF710L application, or IRF710L equivalent, key selection criteria include its 400 V V_DS, repetitive avalanche rating (I_AR = 2.0 A), dV/dt ruggedness (4.0 V/ns), and TO-220AB thermal performance (R_thJC = 3.5 °C/W) for industrial power supply design.

Technical Context

This third-generation planar VDMOS device uses a ruggedized silicon structure with dynamic dV/dt immunity and built-in body diode recovery (t_rr = 240–540 ns). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drive while maintaining noise margin against spurious conduction.

The MOSFET operates in enhancement mode with zero gate voltage drain current ≤25 μA at 400 V, and supports linear-mode operation up to 150 °C junction temperature. Its low Q_gd/Q_g ratio (8.5/17 nC) contributes to controlled turn-off and reduced Miller-induced shoot-through risk in half-bridge topologies.

Key Specifications

Pinout & Package

IRF710L is housed in TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 3.5 °C/W) and mechanical compatibility with standard mounting hardware (6–32 or M3 screw, 10 lbf·in torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP4NK50ZFP and IXTP2N50D2, IRF710L offers superior thermal interface via isolated TO-220AB tab, optimal R_DS(on)/Q_g balance for 65 kHz flyback designs, and proven dV/dt ruggedness in legacy industrial power supplies - making it the preferred choice for cost-sensitive, through-hole-based offline converters requiring field-proven reliability.

Availability

IRF710L is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS, and lamp ballasts requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF710L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF710L belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, cost-effective switching in offline power conversion - emphasizing avalanche survivability, dV/dt immunity, and thermal robustness in TO-220 platforms.

FAQ

What is the maximum continuous drain current for IRF710L at 100 °C case temperature?

The IRF710L supports 1.2 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains ≤150 °C under steady-state conduction. Designers must verify heatsink sizing using R_thJC = 3.5 °C/W and ambient conditions. The IRF710L datasheet specifies this value explicitly in the "Continuous drain current" row under TC = 100 °C.

Does IRF710L have a fully isolated drain tab in the TO-220AB package?

Yes, the IRF710L uses a TO-220AB package with electrically isolated drain tab, allowing direct mounting to a common heatsink without insulating hardware. This isolation is confirmed in Vishay's package drawings and thermal resistance data (R_thCS = 0.50 °C/W specified for case-to-sink interface). The IRF710L's isolation enables simplified thermal design in high-density power supplies where multiple devices share one heatsink.

What is the typical reverse recovery time (t_rr) of the body diode in IRF710L?

The IRF710L body diode exhibits t_rr = 240–540 ns at T_J = 25 °C, I_F = 2.0 A, and dI/dt = 100 A/μs, as specified in the "Drain-Source Body Diode Characteristics" table. This range reflects process variation and test condition sensitivity. For synchronous rectification or bidirectional switching, designers should use this t_rr window to size snubbers or select complementary devices. The IRF710L's body diode performance is documented in Figure 7 and Table 1 on page 2 of its datasheet.

Can IRF710L be driven directly by a 5 V microcontroller GPIO pin?

No - the IRF710L has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (R_DS(on) = 3.6 Ω). Driving it with 5 V yields significantly higher on-resistance (>10 Ω), excessive conduction loss, and thermal instability. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is required. The IRF710L datasheet confirms V_GS = 10 V as the test condition for all R_DS(on) and switching parameter specifications.

Is IRF710L suitable for linear-mode (active-region) operation?

Yes - the IRF710L is rated for linear-mode operation up to T_J = 150 °C, with Safe Operating Area (SOA) curves provided in Figure 8 of its datasheet. Its SOA supports DC operation at V_DS ≤ 40 V and I_D ≤ 2.0 A, or pulsed operation up to 100 V/1 A (10 ms). Designers must strictly adhere to the SOA boundary and use forced-air cooling or large copper areas to manage power dissipation. The IRF710L's SOA validation makes it viable for electronic loads and analog regulators where precise current control is needed.