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Vishay Siliconix IRF710PBF-BE3

Part No.:
IRF710PBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRF710PBF-BE3.pdf
Description:
MOSFET N-CH 400V 2A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,462

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Product details

Overview

IRF710PBF-BE3 from Vishay Siliconix is a 400 V, 2.0 A N-channel power MOSFET in TO-220AB package, featuring 3.6 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and repetitive avalanche rating-designed for flyback and SMPS primary-side switching in industrial AC-DC adapters.

For engineers reviewing the IRF710PBF-BE3 datasheet, IRF710PBF-BE3 pinout, IRF710PBF-BE3 application, or IRF710PBF-BE3 equivalent, key selection criteria include unclamped inductive switching capability (120 mJ EAS), dV/dt ruggedness (4.0 V/ns), body diode recovery performance (240–540 ns trr), and thermal resistance (RthJC = 3.5 °C/W).

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for hard-switched topologies. Its design emphasizes dynamic ruggedness-evidenced by specified repetitive avalanche current (2.0 A IAR) and energy (3.6 mJ EAR)-and fast, controlled switching via low Qgd/Qg ratio (8.5/17 nC) and 21 ns turn-off delay.

The TO-220AB package enables direct heatsink mounting with 0.50 °C/W case-to-sink thermal resistance, while its 400 V VDS rating and 2.0 A continuous drain current support operation in universal-input offline converters up to ~35 W output power under convection cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - Supports 375 V DC link in universal AC input (85–265 VAC) flyback converters without derating.
RDS(on)3.6 Ω @ VGS = 10 V - Limits conduction loss to ≤0.86 W at 1.2 A continuous ID, enabling thermally stable operation at TC = 100 °C.
Qg17 nC - Enables efficient gate drive with standard 10 V logic-level drivers; Qgd/Qg = 50% supports clean voltage-controlled switching transitions.
EAS120 mJ - Allows safe single-pulse unclamped inductive switching in transformer-coupled topologies without external snubbers.
tr/tf9.9 ns / 11 ns - Reduces switching transition time, minimizing overlap loss in 65–100 kHz SMPS designs.
VSD1.6 V @ IS = 2.0 A - Defines forward drop of integral body diode during synchronous rectification or freewheeling phases.

Pinout & Package

IRF710PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness, low thermal resistance (RthJC = 3.5 °C/W), and compatibility with automated through-hole assembly.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeReceives 10 V gate drive signal; requires ≤11.2 Ω series resistance to damp ringing per internal Rg spec.
D (Drain)High-side power terminalConnected to TO-220AB metal tab; electrically tied to drain-must be insulated from heatsink unless referenced to same potential.
S (Source)Power return and reference nodeServes as local ground reference for gate drive; source inductance (LS = 7.5 nH) impacts switching waveform fidelity.

Key Features

FeatureDesign Value
Repetitive avalanche ratedSupports reliable operation under transient overvoltage conditions (e.g., transformer leakage spikes) with 2.0 A IAR and 3.6 mJ EAR.
Dynamic dV/dt rating4.0 V/ns immunity prevents false turn-on during high-speed voltage transients across drain-source terminals.
Fast switchingCombined 21 ns td(off) + 11 ns tf enables high-frequency operation with minimized switching losses in 65–130 kHz converters.
Low Qgd/Qg ratio8.5/17 = 0.5 reduces Miller plateau duration, improving controllability during hard-switching transitions.

Applications

Industrial AC-DC AdaptersLED Driver Primary Switch

Use Scenario: 24 V/1 A offline flyback converter powering PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during 65 kHz PWM cycles.

Use Value: 400 V VDS withstands reflected output voltage plus line surges; 120 mJ EAS absorbs leakage inductance spikes without snubber.

Use Scenario: Constant-current LED driver for street lighting operating from 220 VAC mains with PFC front-end.

IC Role / Device Role / Timing Role: Main switching element in non-isolated buck-boost or flyback stage regulating LED string current.

Use Value: Ruggedized avalanche rating ensures reliability during lamp hot-plug events and line transients; TO-220AB allows direct heatsink mounting on aluminum housing.

Offline SMPS for AppliancesDC-DC Converter in Telecom Shelf

Use Scenario: Power supply inside induction cooktop control board requiring 12 V/0.5 A auxiliary rail.

IC Role / Device Role / Timing Role: Primary switch in compact 35 W quasi-resonant flyback delivering isolated bias supply.

Use Value: Low 3.6 Ω RDS(on) minimizes conduction loss at partial load; 17 nC Qg enables efficient drive from UC384X controller.

Use Scenario: Intermediate bus converter (48 V → 12 V) in distributed telecom power architecture.

IC Role / Device Role / Timing Role: High-side switch in forward or active-clamp forward topology operating at 100 kHz.

Use Value: 4.0 V/ns dV/dt rating prevents spurious turn-on from high dv/dt coupling in dense PCB layouts; 3.5 °C/W RthJC supports forced-air cooling at 1.2 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK40ZFP400 V VDS, 2.6 A ID, 3.5 Ω RDS(on), Zener-protected gate, TO-220FP package (full-pack, no isolated tab)Lower RDS(on) but higher Qg (22 nC); lacks specified EAS rating; tab not drain-connectedPreferred where gate protection is critical and heatsink isolation is unnecessary; not drop-in due to non-isolated tab.
FQP4N40400 V VDS, 3.5 A ID, 3.0 Ω RDS(on), TO-220 package, no avalanche rating publishedHigher current rating but unspecified avalanche capability; slightly lower RDS(on); identical pinout and package outlineAcceptable where ruggedness requirements are relaxed and higher continuous current margin is needed; verify layout compatibility with same footprint.

Compared with STP4NK40ZFP and FQP4N40, IRF710PBF-BE3 offers verified repetitive avalanche performance and drain-isolated TO-220AB packaging-critical for designs requiring intrinsic surge resilience and flexible heatsinking without electrical isolation hardware.

Availability

IRF710PBF-BE3 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver primary switches, and offline SMPS for appliances requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant/halogen-free construction.

Supply support for IRF710PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF710PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for cost-sensitive, high-reliability offline switching applications including flyback, forward, and resonant converters.

FAQ

What is the maximum continuous drain current rating for IRF710PBF-BE3 at 100 °C case temperature?

The IRF710PBF-BE3 has a maximum continuous drain current (ID) of 1.2 A when the case temperature (TC) is 100 °C. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 to +150 °C operating range. At TC = 25 °C, the rating increases to 2.0 A. The linear derating factor is 0.29 W/°C for power dissipation.

Does IRF710PBF-BE3 have a specified avalanche energy rating?

Yes, IRF710PBF-BE3 is repetitively avalanche rated with a single-pulse avalanche energy (EAS) of 120 mJ and repetitive avalanche energy (EAR) of 3.6 mJ. These values are measured under defined test conditions (VDD = 50 V, L = 52 mH, IAS = 2.0 A) and confirm the device's ability to safely absorb inductive switching energy without failure-critical for flyback and forward converter reliability.

What is the gate threshold voltage range for IRF710PBF-BE3?

The gate-source threshold voltage (VGS(th)) for IRF710PBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates the minimum gate voltage required to begin channel conduction. Full enhancement and low RDS(on) require VGS ≥ 10 V, as confirmed by the 3.6 Ω on-resistance specification at that drive level.

Is IRF710PBF-BE3 compatible with standard TO-220AB footprints and heatsinks?

Yes, IRF710PBF-BE3 uses the standard TO-220AB package with drain-connected metal tab, matching mechanical dimensions and mounting hole pattern of industry-standard TO-220AB components. Its case-to-sink thermal resistance is 0.50 °C/W with greased surface contact, enabling direct attachment to heatsinks without insulating hardware-provided the heatsink is referenced to drain potential.

What is the typical reverse recovery time of the body diode in IRF710PBF-BE3?

The body diode reverse recovery time (trr) for IRF710PBF-BE3 is specified from 240 ns to 540 ns at TJ = 25 °C, IF = 2.0 A, and dI/dt = 100 A/μs. This parameter directly affects switching loss and EMI in topologies where the body diode conducts, such as in asynchronous flyback or half-bridge configurations-designers should account for this in snubber and layout decisions.

IRF710PBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
36W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRF710PBF-BE3 FAQ

1.How can I place an order for IRF710PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF710PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF710PBF-BE3 reliable?

The price and inventory of IRF710PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF710PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF710PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF710PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF710PBF-BE3?

IRF710PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF710PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF710PBF-BE3?

For technical support, including IRF710PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF710PBF-BE3 requirements.

6.How does Aetrix verify that IRF710PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF710PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF710PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF710PBF-BE3?

All IRF710PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF710PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF710PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF710PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF710PBF-BE3 Tags

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