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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF710SPBF

Name: IRF710SPBF
Brand: Vishay Siliconix
SKU: IRF710SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF710SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF710SPBF.pdf

Description:: MOSFET N-CH 400V 2A D2PAK

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Product details

Overview

IRF710SPBF from Vishay Siliconix is a 400 V, 2.0 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 3.6 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and offline switch-mode power supplies.

For engineers reviewing the IRF710SPBF datasheet, IRF710SPBF pinout, IRF710SPBF application, or IRF710SPBF equivalent, key selection criteria include its 400 V drain-source breakdown voltage, 3.6 Ω on-resistance at 10 V gate drive, 120 mJ single-pulse avalanche energy, D2PAK thermal performance (R_thJC = 3.5 °C/W), and fast switching with 8 ns turn-on delay and 21 ns turn-off delay.

Technical Context

This third-generation Vishay power MOSFET uses planar vertical DMOS technology optimized for ruggedness and fast switching in high-voltage, moderate-current topologies. Its design supports unclamped inductive switching with controlled dv/dt (4.0 V/ns) and integrates a low-Q_rr (0.85–1.6 μC) body diode for improved hard-switching reliability.

The device operates with gate threshold voltage between 2.0 V and 4.0 V, requires simple gate drive (±20 V max), and delivers stable R_DS(on) up to 150 °C junction temperature. Its D2PAK package enables PCB-mount power dissipation of 3.1 W and case-mount dissipation of 36 W, supporting both compact and thermally demanding implementations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Supports primary-side switching in 380 V DC bus and universal-input offline SMPS without derating.
R_DS(on)	3.6 Ω @ V_GS = 10 V - Enables <2.9 W conduction loss at 1.2 A continuous current (T_C = 100 °C).
Q_g	17 nC - Matches standard 10 V gate drivers; enables <100 ns total switching transition with 24 Ω gate resistor.
E_AS	120 mJ - Withstands single-pulse inductive energy in flyback snubberless designs or relay driving without external clamping.
I_D (cont.)	2.0 A @ T_C = 25 °C - Sustains full-rated current with minimal heatsinking in D2PAK PCB-mount configurations.
trr / Q_rr	240–540 ns / 0.85–1.6 μC - Reduces diode recovery losses and EMI in discontinuous conduction mode (DCM) flyback converters.
R_thJC	3.5 °C/W - Allows direct thermal coupling to heatsink for high-power density designs requiring >10 W dissipation.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab (pin 2) for thermal and electrical connection; 3-pin configuration with G–D–S terminal layout (viewed from top, marking side up, leads down).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; 3.4 nC Q_gs ensures rapid Miller plateau entry and low drive power.
D (Drain)	High-side power output	Exposed metal tab (pin 2) - electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
S (Source)	Power return reference	Common source node for gate drive return path; internal source inductance (L_S = 7.5 nH) affects diode reverse recovery behavior.

Key Features

Feature	Design Value
Repetitive avalanche rated	3.6 mJ per pulse - Enables reliable operation under transient overloads without external protection circuitry.
Dynamic dv/dt rating	4.0 V/ns - Suppresses false turn-on in high-noise, high-dV/dt environments such as motor drives and PFC stages.
Fast switching	td(on) = 8 ns, tf = 11 ns - Reduces switching losses below 200 kHz operation with minimal gate drive complexity.
Low Q_gd/Q_g ratio	8.5/17 = 50% - Improves Miller immunity and enables stable operation with high-side gate drivers in half-bridge configurations.
RoHS-compliant, Pb-free	IRF710SPBF variant - Meets JEDEC J-STD-020 reflow profile; compatible with lead-free assembly processes.

Applications

AC-DC Auxiliary Power Supply	Offline Flyback Converter
Use Scenario: Primary-side switch in 5–15 W auxiliary supplies powering control ICs and bias rails in industrial PLCs and HVAC controllers. IC Role / Device Role / Timing Role: High-voltage N-channel switch operating in discontinuous conduction mode (DCM) at 65–100 kHz. Use Value: 400 V V_DS margin accommodates 375 V DC link ripple; 120 mJ E_AS eliminates need for snubber in low-power flyback designs.	Use Scenario: Main power switch in universal-input (85–265 V_AC) flyback converters delivering 12 V/1 A for IoT gateway power rails. IC Role / Device Role / Timing Role: Primary-side switching element with self-driven synchronous rectification support via body diode timing. Use Value: 240–540 ns trr and low Q_rr minimize cross-conduction loss during MOSFET turn-on; 3.6 Ω R_DS(on) limits conduction loss to <4.3 W at full load.
DC-DC Isolated Bias Supply	Industrial Relay Driver
Use Scenario: Isolated 24 V input-to-5 V output converter supplying isolated gate drive for IGBT modules in motor inverters. IC Role / Device Role / Timing Role: Primary-side switch in forward or flyback topology with tight regulation requirements and low standby loss. Use Value: 25 μA IDSS at 400 V ensures negligible leakage current in standby; 17 nC Q_g enables efficient PWM dimming control at 10–50 kHz.	Use Scenario: High-side driver for 24 V DC industrial relays and solenoids in factory automation I/O modules. IC Role / Device Role / Timing Role: Load switch with integrated avalanche energy handling for inductive kickback suppression. Use Value: 120 mJ E_AS absorbs relay coil energy without external TVS; 2.0 A continuous rating supports 1.5 A relay coils with 33% safety margin.

AC-DC Auxiliary Power Supply

Offline Flyback Converter

Use Scenario: Primary-side switch in 5–15 W auxiliary supplies powering control ICs and bias rails in industrial PLCs and HVAC controllers.

IC Role / Device Role / Timing Role: High-voltage N-channel switch operating in discontinuous conduction mode (DCM) at 65–100 kHz.

Use Value: 400 V V_DS margin accommodates 375 V DC link ripple; 120 mJ E_AS eliminates need for snubber in low-power flyback designs.

Use Scenario: Main power switch in universal-input (85–265 V_AC) flyback converters delivering 12 V/1 A for IoT gateway power rails.

IC Role / Device Role / Timing Role: Primary-side switching element with self-driven synchronous rectification support via body diode timing.

Use Value: 240–540 ns trr and low Q_rr minimize cross-conduction loss during MOSFET turn-on; 3.6 Ω R_DS(on) limits conduction loss to <4.3 W at full load.

DC-DC Isolated Bias Supply

Industrial Relay Driver

Use Scenario: Isolated 24 V input-to-5 V output converter supplying isolated gate drive for IGBT modules in motor inverters.

IC Role / Device Role / Timing Role: Primary-side switch in forward or flyback topology with tight regulation requirements and low standby loss.

Use Value: 25 μA IDSS at 400 V ensures negligible leakage current in standby; 17 nC Q_g enables efficient PWM dimming control at 10–50 kHz.

Use Scenario: High-side driver for 24 V DC industrial relays and solenoids in factory automation I/O modules.

IC Role / Device Role / Timing Role: Load switch with integrated avalanche energy handling for inductive kickback suppression.

Use Value: 120 mJ E_AS absorbs relay coil energy without external TVS; 2.0 A continuous rating supports 1.5 A relay coils with 33% safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 Ω R_DS(on), 15 nC Q_g, TO-220FP package	Through-hole mounting; higher R_thJA (65 °C/W); no D2PAK thermal pad	Preferred where board space allows through-hole assembly and lower gate charge is prioritized over surface-mount integration.
IXTP4N40P	400 V, 3.8 Ω R_DS(on), 19 nC Q_g, TO-220 package	Higher Q_g increases gate drive loss; lacks repetitive avalanche rating; different SOA curve	Acceptable for non-avalanche-critical linear or low-duty-cycle switching; not recommended for unclamped inductive loads.

Compared with STP4NK40ZFP and IXTP4N40P, the IRF710SPBF offers superior thermal performance in surface-mount layouts, guaranteed repetitive avalanche capability, and tighter Q_gd/Q_g ratio-making it optimal for compact, high-reliability offline power stages where PCB real estate and transient robustness are critical.

Availability

IRF710SPBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, offline flyback converters, and industrial relay drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF710SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF710SPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective implementation in offline power conversion systems.

FAQ

What is the maximum continuous drain current for IRF710SPBF at 100 °C case temperature?

The IRF710SPBF supports 1.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the final design. The IRF710SPBF maintains 3.6 Ω R_DS(on) across this temperature range, enabling predictable conduction loss calculation.

Does IRF710SPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF710SPBF integrates a monolithic body diode with typical forward voltage V_SD = 1.6 V at I_S = 2.0 A and T_J = 25 °C. Its reverse recovery time (t_rr) ranges from 240 ns to 540 ns, and reverse recovery charge (Q_rr) is 0.85–1.6 μC-critical parameters for minimizing switching loss and EMI in flyback and resonant converters. These values are measured under standardized conditions (T_J = 25 °C, I_F = 2.0 A, di/dt = 100 A/μs) and apply directly to the IRF710SPBF.

Is IRF710SPBF pin-compatible with other D2PAK-packaged MOSFETs like IRF740 or STP4NK40ZFP?

No, IRF710SPBF is not pin-compatible with IRF740 (which has identical D2PAK outline but different pin assignment: G–S–D vs. G–D–S) or STP4NK40ZFP (TO-220FP package). The IRF710SPBF follows standard D2PAK pinout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. Substitution requires verification of pin mapping, thermal pad connectivity, and layout adaptation-even when package outlines appear similar.

What is the gate threshold voltage range for IRF710SPBF, and how does it affect drive requirements?

The IRF710SPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming compatibility with standard 10 V gate drivers but not logic-level (3.3 V or 5 V) operation. Reliable enhancement-mode switching requires V_GS ≥ 10 V to achieve full 3.6 Ω R_DS(on); using lower gate voltages results in significantly higher on-resistance and conduction loss. This specification is explicitly defined for the IRF710SPBF in the datasheet's Static Characteristics section.

Can IRF710SPBF be used in avalanche mode, and what are the safe operating limits?

Yes, the IRF710SPBF is rated for repetitive avalanche operation with E_AR = 3.6 mJ per pulse and single-pulse E_AS = 120 mJ. Safe avalanche use requires adherence to pulse width and duty cycle limits defined in Figure 11 (maximum junction temperature constraint) and test condition b (V_DD = 50 V, L = 52 mH, R_g = 25 Ω, I_AS = 2.0 A). Exceeding these conditions risks permanent damage. The IRF710SPBF's avalanche capability is validated and documented-not inferred.

IRF710SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF710SPBF FAQ

1.How can I place an order for IRF710SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF710SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF710SPBF reliable?

The price and inventory of IRF710SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF710SPBF is usually 5 days.

3.What payment methods are accepted for IRF710SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF710SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF710SPBF?

IRF710SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF710SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF710SPBF?

For technical support, including IRF710SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF710SPBF requirements.

6.How does Aetrix verify that IRF710SPBF is sourced from the original manufacturer or authorized distributors?

All IRF710SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF710SPBF meets industry standards.

7.What is the process for return or replacement of IRF710SPBF?

All IRF710SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF710SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF710SPBF part is unused and in its original packaging.

Return procedure for IRF710SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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