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Vishay Siliconix IRF710STRLPBF
- Part No.:
- IRF710STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF710STRLPBF.pdf
- Description:
- MOSFET N-CH 400V 2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5
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Product details
Overview
IRF710STRLPBF from Vishay Siliconix is a 400 V, 2.0 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 3.6 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters and offline switch-mode power supplies.
For engineers reviewing the IRF710STRLPBF datasheet, IRF710STRLPBF pinout, IRF710STRLPBF application, or IRF710STRLPBF equivalent, key selection criteria include its 400 V blocking capability, low 3.6 Ω on-resistance at 10 V drive, 120 mJ single-pulse avalanche energy, and suitability for high-temperature industrial power stages requiring ruggedized switching performance.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for high-voltage operation with fast switching (8 ns turn-on delay, 11 ns fall time) and robust dv/dt immunity (4.0 V/ns peak diode recovery). Its design supports unclamped inductive switching with 2.0 A repetitive avalanche current and 3.6 mJ repetitive avalanche energy.
The device integrates a low-inductance D2PAK package with internal drain (4.5 nH) and source (7.5 nH) inductances, enabling stable paralleling and minimizing switching oscillation. Thermal resistance of 3.5 °C/W (junction-to-case) supports 36 W continuous dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Supports primary-side switching in 380 V DC bus and universal AC-input offline SMPS. |
| RDS(on) @ VGS = 10 V | 3.6 Ω - Enables <2.9 W conduction loss at 1.2 A continuous drain current (TC = 100 °C). |
| Qg max | 17 nC - Determines gate drive power requirement; compatible with standard 12 V logic-level drivers. |
| EAS | 120 mJ - Allows safe operation under unclamped inductive load transients without external snubbers. |
| TJ range | –55 to +150 °C - Qualified for industrial ambient environments and thermally demanding PCB layouts. |
| ID continuous @ TC = 25 °C | 2.0 A - Sustains full-rated current with minimal heatsinking in D2PAK surface-mount configuration. |
| dv/dt rating | 4.0 V/ns - Resists false turn-on during high-speed voltage transitions in hard-switched topologies. |
Pinout & Package
D2PAK (TO-263) package: 3-lead surface-mount outline with exposed drain pad (pin 2), gate (pin 1), and source (pin 3); thermal pad soldered to PCB for enhanced heat transfer per Vishay recommended footprint (0.420" × 0.355").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal accepting 10 V drive; threshold voltage 2.0–4.0 V enables compatibility with standard CMOS and TTL gate drivers. |
| Pin 2 (D) | Drain | Main high-voltage power terminal; electrically connected to exposed thermal pad for simultaneous power conduction and heat sinking. |
| Pin 3 (S) | Source | Power return path and reference for gate drive; forms integral body diode anode for freewheeling in buck/forward topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.0 A IAR, 3.6 mJ EAR - Enables reliable operation in inductive load switching without derating for transient overloads. |
| Dynamic dv/dt immunity | 4.0 V/ns - Prevents spurious turn-on during rapid voltage slew in high-frequency flyback or resonant converters. |
| Low gate charge | 17 nC Qg, 8.5 nC Qgd - Reduces driver power loss and improves efficiency in 100–500 kHz switching applications. |
| Surface-mount D2PAK | 36 W PD @ TC = 25 °C - Delivers higher power density than TO-220 while maintaining manufacturability in automated SMT lines. |
| Body diode performance | trr = 240–540 ns, Qrr = 0.85–1.6 μC - Supports synchronous rectification in secondary-side designs with controlled reverse recovery. |
Applications
| Industrial AC-DC Power Supplies | High-Voltage DC-DC Converters |
|---|---|
|
Use Scenario: Primary-side switch in 30–60 W offline flyback converters with universal 85–265 VAC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65–132 kHz. Use Value: 400 V VDS rating accommodates reflected output voltage plus leakage spike margin; 120 mJ EAS eliminates need for clamp circuits. |
Use Scenario: Isolated DC-DC stage stepping 400 V DC bus down to 24 V for industrial control systems. IC Role / Device Role / Timing Role: Primary-side switch in forward or half-bridge topology; handles 2.0 A average current at 100–200 kHz. Use Value: 3.6 Ω RDS(on) limits conduction loss to ≤2.9 W at full load; D2PAK thermal pad ensures stable TJ < 125 °C without heatsink. |
| Motor Drive Protection Circuits | LED Driver Power Stages |
|
Use Scenario: Overvoltage protection switch in 3-phase inverter pre-charge and braking circuits. IC Role / Device Role / Timing Role: Fast-acting crowbar device clamping bus voltage spikes during regenerative braking events. Use Value: Repetitive avalanche rating (2.0 A, 3.6 mJ) allows repeated absorption of inductive kickback without degradation. |
Use Scenario: Constant-current switch in high-bay LED drivers operating from 277 VAC line. IC Role / Device Role / Timing Role: Primary-side PWM switch regulating LED string current in non-isolated buck-derived topologies. Use Value: Low 3.6 Ω on-resistance minimizes thermal rise in enclosed fixtures; 150 °C TJ rating supports sealed thermal environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 3.5 Ω RDS(on), 16 nC Qg, TO-220FP package | Through-hole mounting; lower thermal resistance to heatsink but requires manual assembly or wave soldering. | Preferred where board space permits through-hole heatsinking and legacy manufacturing processes apply. |
| IXTP4N40P | 400 V, 3.8 Ω RDS(on), 15 nC Qg, TO-220 package | Higher RDS(on) and no avalanche rating; lacks repetitive avalanche qualification per datasheet. | Suitable only in non-inductive or snubber-protected applications where transient energy is externally limited. |
Compared with STP4NK40ZFP and IXTP4N40P, IRF710STRLPBF offers surface-mount D2PAK packaging with verified repetitive avalanche capability and tighter RDS(on) tolerance-making it optimal for automated production of compact, high-reliability industrial power stages.
Availability
IRF710STRLPBF is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and motor drive protection circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRF710STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF710STRLPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in offline power conversion with emphasis on avalanche robustness, low gate charge, and surface-mount thermal performance.
FAQ
What is the maximum continuous drain current for IRF710STRLPBF at 100 °C case temperature?
The IRF710STRLPBF supports 1.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual PCB layout and airflow conditions in the target application.
Does IRF710STRLPBF have a qualified repetitive avalanche rating?
Yes, IRF710STRLPBF is explicitly rated for repetitive avalanche operation: 2.0 A avalanche current (IAR) and 3.6 mJ repetitive avalanche energy (EAR) at TJ ≤ 150 °C, per the Absolute Maximum Ratings table and test condition note "a". This qualifies IRF710STRLPBF for inductive switching without external protection in properly designed circuits.
What is the gate threshold voltage range for IRF710STRLPBF?
The gate-source threshold voltage (VGS(th)) for IRF710STRLPBF is specified as 2.0 V minimum to 4.0 V maximum at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing unintended conduction near ground potential.
Can IRF710STRLPBF be used in parallel configurations?
Yes, IRF710STRLPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on) and low gate charge asymmetry. The datasheet explicitly lists "Ease of paralleling" as a feature, and its D2PAK package minimizes source inductance mismatch-critical for balanced current sharing in multi-device power stages.
What is the body diode reverse recovery time for IRF710STRLPBF?
The body diode reverse recovery time (trr) for IRF710STRLPBF is specified as 240 ns typical to 540 ns maximum at TJ = 25 °C, IF = 2.0 A, and di/dt = 100 A/μs. This value is measured using the test circuit in Figure 12b and directly impacts switching loss and EMI in freewheeling and synchronous rectifier applications.
IRF710STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF710STRLPBF FAQ
1.How can I place an order for IRF710STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF710STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF710STRLPBF reliable?
The price and inventory of IRF710STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF710STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF710STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF710STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF710STRLPBF?
IRF710STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF710STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF710STRLPBF?
For technical support, including IRF710STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF710STRLPBF requirements.
6.How does Aetrix verify that IRF710STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF710STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF710STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF710STRLPBF?
All IRF710STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF710STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF710STRLPBF part is unused and in its original packaging.
Return procedure for IRF710STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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