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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF720PBF-BE3

Name: IRF720PBF-BE3
Brand: Vishay Siliconix
SKU: IRF720PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF720PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF720PBF-BE3.pdf

Description:: MOSFET N-CH 400V 3.3A TO220AB

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Product details

Overview

IRF720PBF-BE3 from Vishay Siliconix is a 400 V, 3.3 A N-channel power MOSFET in TO-220AB package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating - designed for flyback and offline SMPS primary-side switching.

For engineers reviewing the IRF720PBF-BE3 datasheet, IRF720PBF-BE3 pinout, IRF720PBF-BE3 application, or IRF720PBF-BE3 equivalent, key selection criteria include its 400 V V_DS, 1.8 Ω on-resistance at 10 V drive, 2.5 °C/W junction-to-case thermal resistance, and suitability for 50 W continuous dissipation in industrial AC-DC converters.

Technical Context

This third-generation planar MOSFET uses ruggedized silicon design with dynamic dV/dt capability (4.0 V/ns) and built-in body diode (V_SD = 1.6 V, t_rr = 270–600 ns). It supports unclamped inductive switching with 190 mJ single-pulse avalanche energy and 5.0 mJ repetitive avalanche energy.

Gate drive is simplified by low threshold voltage (2.0–4.0 V), ±100 nA gate leakage, and 3.3 nC gate-source charge - enabling compatibility with standard 10 V logic-level controllers without requiring level-shifting circuitry in fixed-frequency hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 230 VAC mains input with ≥100 V safety margin in offline converters
R_DS(on)	1.8 Ω @ V_GS = 10 V - enables <3.3 A continuous conduction with ≤20 W conduction loss at 100 °C case temperature
Q_g	20 nC - determines gate driver current requirement (~1 mA avg. at 100 kHz switching)
I_D (T_C = 100 °C)	2.1 A - defines maximum usable current under heatsink-limited thermal conditions
E_AS	190 mJ - allows safe operation during output short-circuit events without snubber redesign
R_thJC	2.5 °C/W - enables direct mounting to aluminum heatsink for 50 W PD without thermal derating below 100 °C
t_rr	270–600 ns - impacts body diode recovery losses in discontinuous conduction mode (DCM) flyback

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering peak: 300 °C for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; requires ≤20 nC charge for full enhancement; gate-source leakage ≤±100 nA
D (Drain)	High-voltage power output	Connected to internal die substrate and metal tab; electrically tied to heatsink; rated for 400 V blocking
S (Source)	Power return / reference node	Common return for load current and gate drive loop; source inductance LS = 7.5 nH affects switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 3.3 A repetitive avalanche current and 5.0 mJ energy - eliminates need for external clamping in inductive load switching
Dynamic dV/dt rating	4.0 V/ns - prevents spurious turn-on during high-slew-rate transients in high-noise industrial environments
Fast switching	td(on) = 10 ns, tr = 14 ns, td(off) = 30 ns, tf = 13 ns - enables >200 kHz operation with minimal overlap loss
Ease of paralleling	Positive R_DS(on) temperature coefficient ensures current sharing stability across multiple devices without ballasting resistors
Simple drive requirements	V_GS(th) = 2.0–4.0 V and Q_gs = 3.3 nC allow direct interface with UC384x, TL494, or discrete transistor drivers

Applications

Industrial AC-DC Power Supplies	LED Driver Primary Switch
Use Scenario: 25–50 W offline flyback converter powering PLC I/O modules with universal 85–265 VAC input. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65 kHz with DCM control; handles 3.3 A peak drain current. Use Value: 1.8 Ω R_DS(on) limits conduction loss to <2.0 W at full load; TO-220AB package enables direct bolt-down heatsinking for ambient up to 70 °C.	Use Scenario: Constant-voltage LED driver for street lighting with 120 VAC input and 48 V/1 A output. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback topology; switches at variable frequency up to 130 kHz. Use Value: 400 V V_DS provides margin against line surges; 190 mJ E_AS absorbs inductive kickback during overvoltage protection events.
UPS Inverter Stage	DC Motor Control (Low-Power)
Use Scenario: Half-bridge inverter stage in 300 VA line-interactive UPS converting 12 VDC battery to 120 VAC output. IC Role / Device Role / Timing Role: Low-side switch in complementary pair; driven by IR2104 gate driver with bootstrap supply. Use Value: Repetitive avalanche rating (I_AR = 3.3 A) tolerates shoot-through fault currents; 2.5 °C/W R_thJC maintains T_J < 130 °C under 100% duty cycling.	Use Scenario: H-bridge driver for 24 V, 2 A brushed DC motor in automated gate operator. IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge; operated with PWM at 1–20 kHz. Use Value: Body diode V_SD = 1.6 V enables freewheeling without external Schottky; 7.5 nH source inductance minimizes gate oscillation during fast commutation.

Industrial AC-DC Power Supplies

LED Driver Primary Switch

Use Scenario: 25–50 W offline flyback converter powering PLC I/O modules with universal 85–265 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65 kHz with DCM control; handles 3.3 A peak drain current.

Use Value: 1.8 Ω R_DS(on) limits conduction loss to <2.0 W at full load; TO-220AB package enables direct bolt-down heatsinking for ambient up to 70 °C.

Use Scenario: Constant-voltage LED driver for street lighting with 120 VAC input and 48 V/1 A output.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback topology; switches at variable frequency up to 130 kHz.

Use Value: 400 V V_DS provides margin against line surges; 190 mJ E_AS absorbs inductive kickback during overvoltage protection events.

UPS Inverter Stage

DC Motor Control (Low-Power)

Use Scenario: Half-bridge inverter stage in 300 VA line-interactive UPS converting 12 VDC battery to 120 VAC output.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair; driven by IR2104 gate driver with bootstrap supply.

Use Value: Repetitive avalanche rating (I_AR = 3.3 A) tolerates shoot-through fault currents; 2.5 °C/W R_thJC maintains T_J < 130 °C under 100% duty cycling.

Use Scenario: H-bridge driver for 24 V, 2 A brushed DC motor in automated gate operator.

IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge; operated with PWM at 1–20 kHz.

Use Value: Body diode V_SD = 1.6 V enables freewheeling without external Schottky; 7.5 nH source inductance minimizes gate oscillation during fast commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 3.0 A I_D, 2.2 Ω R_DS(on), TO-220FP (full-pack) package	Higher voltage rating but higher on-resistance and lower current rating; requires different heatsink interface due to non-isolated tab	Prefer when 500 V blocking is mandatory and thermal budget allows +0.4 Ω conduction loss
FQP4N40	400 V V_DS, 3.8 A I_D, 2.0 Ω R_DS(on), TO-220 package with isolated tab	Similar voltage and package; slightly higher R_DS(on) and no specified avalanche rating	Acceptable where avalanche robustness is not required and 0.2 Ω higher on-resistance is tolerable

Compared with STP4NK50ZFP and FQP4N40, the IRF720PBF-BE3 offers lower R_DS(on) (1.8 Ω vs. 2.0–2.2 Ω), verified repetitive avalanche capability (5.0 mJ), and identical TO-220AB isolation - making it optimal for thermally constrained, fault-tolerant 400 V switching where gate drive simplicity and ruggedness are prioritized.

Availability

IRF720PBF-BE3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and UPS inverter stages requiring stable component supply and RoHS-compliant, halogen-free packaging.

Supply support for IRF720PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF720PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, rugged switching in offline SMPS and motor control - emphasizing avalanche robustness, thermal efficiency, and ease of use in high-noise environments.

FAQ

What is the maximum continuous drain current for IRF720PBF-BE3 at 100 °C case temperature?

The IRF720PBF-BE3 supports 2.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.3 A rating at 25 °C, based on the device's linear derating factor of 0.40 W/°C and R_thJC = 2.5 °C/W. Engineers must verify heatsink design ensures T_C ≤ 100 °C under worst-case load to maintain this current capability in the IRF720PBF-BE3.

Does IRF720PBF-BE3 have avalanche capability, and how is it rated?

Yes, the IRF720PBF-BE3 is repetitively avalanche rated per Vishay's datasheet: it supports 3.3 A repetitive avalanche current (I_AR) and 5.0 mJ repetitive avalanche energy (E_AR). Single-pulse avalanche energy is rated at 190 mJ. These values are validated under defined test conditions (V_DD = 50 V, L = 30 mH, R_g = 25 Ω) and enable reliable operation in inductive switching circuits without external clamping - a key specification distinguishing the IRF720PBF-BE3 from non-avalanche-rated MOSFETs.

What is the gate threshold voltage range for IRF720PBF-BE3, and how does it affect drive requirements?

The IRF720PBF-BE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This allows full enhancement with standard 10 V gate drive while remaining compatible with some 5 V logic interfaces. However, due to its relatively high R_DS(on) sensitivity near threshold, reliable switching requires V_GS ≥ 8 V. The IRF720PBF-BE3's 3.3 nC Q_gs and 20 nC Q_g further confirm compatibility with low-current gate drivers like UC3842 or discrete BJT-based circuits.

Is IRF720PBF-BE3 lead-free and halogen-free, and what does the "-BE3" suffix indicate?

Yes, the "-BE3" suffix in IRF720PBF-BE3 explicitly denotes compliance with both lead-free (Pb-free) and halogen-free requirements per Vishay's material categorization standards. It replaces the earlier "-PbF" variant (lead-free only) and meets JEDEC J-STD-609A Class 1 and IEC 61249-2-21 specifications. This makes the IRF720PBF-BE3 suitable for environmentally regulated industrial and consumer applications where brominated flame retardants and chlorine are prohibited.

How does the body diode performance of IRF720PBF-BE3 impact its use in flyback converters?

The IRF720PBF-BE3 features an integral body diode with V_SD = 1.6 V at I_S = 3.3 A and reverse recovery time t_rr = 270–600 ns. In DCM flyback operation, this diode conducts during the off-time, and its recovery characteristics directly influence switching losses and EMI. The relatively slow t_rr necessitates careful snubber design and layout optimization to suppress voltage overshoot - a critical consideration when selecting the IRF720PBF-BE3 for high-efficiency, low-EMI flyback topologies.

IRF720PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 410 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF720PBF-BE3 FAQ

1.How can I place an order for IRF720PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF720PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF720PBF-BE3 reliable?

The price and inventory of IRF720PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF720PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF720PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF720PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF720PBF-BE3?

IRF720PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF720PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF720PBF-BE3?

For technical support, including IRF720PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF720PBF-BE3 requirements.

6.How does Aetrix verify that IRF720PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF720PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF720PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF720PBF-BE3?

All IRF720PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF720PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF720PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF720PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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