Vishay Siliconix IRF720STRR
- Part No.:
- IRF720STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF720STRR.pdf
- Description:
- MOSFET N-CH 400V 3.3A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:9,107
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Product details
Overview
IRF720STRR from Vishay Siliconix is a 400 V, 3.3 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC PFC stages, and industrial motor control circuits.
For engineers reviewing the IRF720STRR datasheet, IRF720STRR pinout, IRF720STRR application, or IRF720STRR equivalent, key selection criteria include its 400 V VDS, 1.8 Ω on-resistance, 20 nC Qg, 190 mJ single-pulse avalanche energy, and D2PAK thermal performance with 2.5 °C/W RthJC.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve ruggedized avalanche capability and fast switching with low gate charge. Its dynamic dv/dt rating of 4.0 V/ns and body diode reverse recovery time of 270 ns support reliable operation in hard-switched inductive loads.
The device integrates a monolithic body diode with 1.6 V forward voltage at 3.3 A and 270–600 ns trr, enabling use in freewheeling and synchronous rectification roles without external diodes in medium-frequency (<100 kHz) topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in offline SMPS up to 380 V DC bus |
| RDS(on) | 1.8 Ω @ VGS = 10 V - enables <3.3 A continuous conduction with ≤12 W conduction loss at TC = 25 °C |
| Qg | 20 nC - determines gate drive power requirement; compatible with standard 1-A peak gate drivers |
| EAS | 190 mJ - allows unclamped inductive switching in relay drivers or solenoid controls without snubbers |
| RthJC | 2.5 °C/W - enables 50 W dissipation with ≤125 °C junction rise above case in heatsink-mounted designs |
| ID (TC = 100 °C) | 2.1 A - defines usable current derating for PCB-only mounting in enclosed industrial enclosures |
| dv/dt Rating | 4.0 V/ns - ensures immunity to parasitic turn-on in high-di/dt half-bridge configurations |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration optimized for high-current PCB mounting and thermal transfer to copper pour or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Drain) | Power Drain Terminal | Exposed metal tab electrically connected to drain; primary thermal path to PCB copper or heatsink |
| Pin 2 (Source) | Power Source Terminal | Low-side return path; connects to ground plane or low-side switch node; carries full load current |
| Pin 3 (Gate) | Control Input | High-impedance MOSFET gate; requires 10 V drive for full enhancement; sensitive to ESD and ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation under transient overloads (5.0 mJ per pulse) without device failure |
| Dynamic dv/dt rating | 4.0 V/ns immunity prevents false turn-on during high-speed switching transitions |
| Fast switching | 10 ns turn-on delay + 14 ns rise time supports >100 kHz hard-switched operation |
| Low Qgd/Qg ratio | 11/20 = 55% - improves Miller immunity and reduces switching losses in high-side configurations |
| RoHS-compliant Pb-free | Meets JEDEC J-STD-609A Class 2a marking; compatible with lead-free reflow profiles |
Applications
| AC-DC Power Factor Correction | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: Boost PFC stage in 300–500 W server PSUs operating from universal AC input. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC link voltage and 3.3 A peak inductor current. Use Value: 190 mJ EAS absorbs inductive kickback during zero-crossing events; 400 V VDS margin accommodates line surges. | Use Scenario: Upper-leg switch in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: N-channel high-side MOSFET driven via bootstrap circuit; switches at 20–50 kHz. Use Value: 4.0 V/ns dv/dt rating prevents spurious turn-on during low-side commutation; 1.8 Ω RDS(on) limits conduction loss at 2.1 A continuous. |
| DC-DC Isolated Flyback Primary | Solenoid & Relay Driver |
Use Scenario: Primary-side switch in 60 W medical-grade isolated flyback converter with 375 V DC input. IC Role / Device Role / Timing Role: Main power switch clamped by RCD snubber; operates with 50% duty cycle at 65 kHz. Use Value: 20 nC Qg enables efficient gate driving with low-power controller ICs; 2.5 °C/W RthJC supports compact heatsinking. | Use Scenario: Inductive load switch in programmable logic controller (PLC) output module driving 24 V DC solenoids. IC Role / Device Role / Timing Role: Single-pole power switch with integrated body diode providing freewheeling path. Use Value: 270 ns body diode trr minimizes voltage overshoot during turn-off; 3.3 A IS sustains hold current without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 3.5 A, 2.2 Ω RDS(on), 16 nC Qg, TO-220FP package | Higher RDS(on) increases conduction loss; lower Qg eases gate drive; through-hole mounting requires different layout | Prefer when board space permits through-hole assembly and lower gate drive power is critical |
| IXTP4N40P | 400 V, 4.0 A, 2.0 Ω RDS(on), 22 nC Qg, TO-220 package | Slightly higher current rating but larger package footprint and higher Qg; no avalanche rating specified | Choose when higher pulsed current headroom is needed and avalanche robustness is not required |
Compared with IRF720STRR, STP4NK40ZFP offers lower gate charge but higher on-resistance and through-hole packaging, while IXTP4N40P provides greater current rating but lacks documented repetitive avalanche capability-making IRF720STRR preferable for unclamped inductive switching reliability.
Availability
IRF720STRR is available at Aetrix Electronics and suitable for AC-DC power factor correction, industrial motor drive half-bridges, and DC-DC isolated flyback primary circuits requiring stable component supply across production lifecycles.
Supply support for IRF720STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF720STRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged avalanche performance and fast switching in offline power conversion and motor control systems.
FAQ
What is the maximum continuous drain current for IRF720STRR at 100 °C case temperature?
The IRF720STRR supports 2.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation without active heatsinking.
Does IRF720STRR have a specified body diode reverse recovery time?
Yes, the IRF720STRR body diode has a reverse recovery time (trr) of 270 ns (typical) and up to 600 ns (max) at TJ = 25 °C, IF = 3.3 A, and di/dt = 100 A/μs. This value is critical for estimating voltage overshoot in freewheeling applications.
Is IRF720STRR RoHS-compliant and halogen-free?
Yes, IRF720STRR is marked as lead (Pb)-free and halogen-free per Vishay's documentation (S20-0682-Rev. F), meeting RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 2a requirements for environmentally compliant manufacturing.
What is the thermal resistance from junction to case (RthJC) for IRF720STRR?
The IRF720STRR has a maximum junction-to-case thermal resistance (RthJC) of 2.5 °C/W, measured from junction to the drain tab. This value assumes proper soldering to a 1" square FR-4 PCB and is essential for calculating safe operating area in thermally constrained designs.
Can IRF720STRR be used in avalanche-mode switching applications?
Yes, IRF720STRR is explicitly rated for repetitive avalanche operation with 5.0 mJ per pulse and single-pulse avalanche energy of 190 mJ. Its datasheet includes test conditions and waveforms (Fig. 12) validating controlled avalanche capability under defined inductive load conditions.
IRF720STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 410 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF720STRR FAQ
1.How can I place an order for IRF720STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF720STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF720STRR reliable?
The price and inventory of IRF720STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF720STRR is usually 5 days.
3.What payment methods are accepted for IRF720STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF720STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF720STRR?
IRF720STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF720STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF720STRR?
For technical support, including IRF720STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF720STRR requirements.
6.How does Aetrix verify that IRF720STRR is sourced from the original manufacturer or authorized distributors?
All IRF720STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF720STRR meets industry standards.
7.What is the process for return or replacement of IRF720STRR?
All IRF720STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF720STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF720STRR part is unused and in its original packaging.
Return procedure for IRF720STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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