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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730

Name: IRF730
Brand: Vishay Siliconix
SKU: IRF730
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF730.pdf

Description:: MOSFET N-CH 400V 5.5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF730 from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in TO-220AB package, optimized for hard-switched SMPS, motor control, and DC-DC converters requiring rugged avalanche capability and fast switching. It delivers 1.0 Ω R_DS(on) at V_GS = 10 V, 290 mJ single-pulse avalanche energy, and 38 nC total gate charge.

For engineers reviewing the IRF730 datasheet, IRF730 pinout, IRF730 application, or IRF730 equivalent, this page provides verified device identity, validated thermal and switching parameters, confirmed TO-220AB pin mapping, and two rigorously cross-referenced alternative parts for industrial power design.

Technical Context

The IRF730 employs third-generation planar vertical DMOS technology with optimized cell layout for low R_DS(on) and controlled dV/dt immunity. Its 1.7 °C/W junction-to-case thermal resistance enables 74 W continuous dissipation at T_C = 25 °C when mounted on a greased heatsink.

It features fully rated repetitive avalanche operation (I_AR = 5.5 A, E_AR = 7.4 mJ), 4.0 V/ns peak diode recovery dV/dt tolerance, and body diode with 270–530 ns reverse recovery time (t_rr) and 1.8–2.2 μC Q_rr, supporting snubberless inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 380 VAC rectified bus applications with 5% margin
R_DS(on) @ V_GS = 10 V	1.0 Ω - limits conduction loss to ≤ 30.25 W at 5.5 A RMS in continuous mode
Q_g	38 nC - determines gate drive power requirement (~1.5 mW per MHz at 10 V swing)
E_AS	290 mJ - enables unclamped inductive switching up to 5.5 A without external snubber
t_r/t_f	15 ns / 14 ns - supports >1 MHz hard-switching in resonant topologies with minimal overlap loss
T_J Range	−55 °C to +150 °C - qualified for industrial ambient environments up to 100 °C case temperature

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.7 °C/W R_thJC, and 62 °C/W R_thJA (no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; 5.7 nC Q_gs ensures fast turn-on with low driver current demand
D (Drain)	High-side power output	Internally connected to metal tab; requires electrical isolation when mounted to heatsink
S (Source)	Power return/reference	Common node for gate drive return and current sensing; 7.5 nH internal source inductance affects high-dI/dt ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	5.5 A I_AR and 7.4 mJ E_AR - eliminates need for external clamping in flyback/forward converter primary switches
Dynamic dV/dt rating	4.0 V/ns - prevents false turn-on during high-speed voltage transients in bridge-leg configurations
Low gate charge ratio	Q_gd/Q_gs = 3.9 - improves Miller immunity and reduces risk of shoot-through in half-bridge drivers
Fast body diode	t_rr = 270–530 ns, Q_rr = 1.8–2.2 μC - minimizes reverse recovery losses in synchronous rectifier and LLC freewheeling paths

Applications

Switch-Mode Power Supply	Motor Drive Inverter
Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter operating at 65–130 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 380 VDC bus with unclamped inductive energy absorption. Use Value: 290 mJ E_AS and 5.5 A I_AR allow reliable operation without snubber networks, reducing BOM count and board area.	Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC blowers or industrial pumps (≤ 500 W). IC Role / Device Role / Timing Role: PWM-controlled phase leg switch with integrated body diode conducting freewheeling current. Use Value: 270–530 ns t_rr and low Q_rr minimize commutation losses during 10–20 kHz PWM transitions.
DC-DC Converter	Industrial Lighting Ballast
Use Scenario: High-side switch in isolated 48 V–12 V buck-derived DC-DC module for telecom shelf power. IC Role / Device Role / Timing Role: Synchronous rectifier control FET enabling zero-voltage switching (ZVS) in active clamp topology. Use Value: 1.0 Ω R_DS(on) and 38 nC Q_g balance conduction efficiency and gate drive loss at 300–500 kHz switching frequency.	Use Scenario: Lamp current regulation switch in magnetic HID ballast replacement circuits for street lighting. IC Role / Device Role / Timing Role: Series-pass switch controlling AC lamp current via phase-cut dimming or high-frequency square-wave drive. Use Value: −55 °C to +150 °C T_J range and 400 V V_DS ensure reliability under outdoor thermal cycling and line surge conditions.

Switch-Mode Power Supply

Motor Drive Inverter

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter operating at 65–130 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380 VDC bus with unclamped inductive energy absorption.

Use Value: 290 mJ E_AS and 5.5 A I_AR allow reliable operation without snubber networks, reducing BOM count and board area.

Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC blowers or industrial pumps (≤ 500 W).

IC Role / Device Role / Timing Role: PWM-controlled phase leg switch with integrated body diode conducting freewheeling current.

Use Value: 270–530 ns t_rr and low Q_rr minimize commutation losses during 10–20 kHz PWM transitions.

DC-DC Converter

Industrial Lighting Ballast

Use Scenario: High-side switch in isolated 48 V–12 V buck-derived DC-DC module for telecom shelf power.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET enabling zero-voltage switching (ZVS) in active clamp topology.

Use Value: 1.0 Ω R_DS(on) and 38 nC Q_g balance conduction efficiency and gate drive loss at 300–500 kHz switching frequency.

Use Scenario: Lamp current regulation switch in magnetic HID ballast replacement circuits for street lighting.

IC Role / Device Role / Timing Role: Series-pass switch controlling AC lamp current via phase-cut dimming or high-frequency square-wave drive.

Use Value: −55 °C to +150 °C T_J range and 400 V V_DS ensure reliability under outdoor thermal cycling and line surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4.0 A I_D, 2.2 Ω R_DS(on), Zener-protected gate	Higher voltage rating but higher on-resistance; lower current rating limits power handling	Preferable where 500 V margin is critical and conduction loss is secondary to surge robustness
FQP4N40	400 V V_DS, 4.0 A I_D, 2.5 Ω R_DS(on), no avalanche rating	Same voltage rating but no specified repetitive avalanche capability; lower gate charge (22 nC)	Acceptable for non-inductive loads or designs with external clamping; not suitable for unclamped inductive switching

Compared with STP4NK50ZFP and FQP4N40, the IRF730 offers superior current capability (5.5 A vs. ≤4.0 A), lower R_DS(on) (1.0 Ω vs. ≥2.2 Ω), and verified repetitive avalanche performance-making it the preferred choice for industrial SMPS and motor drives demanding ruggedness and efficiency.

Availability

IRF730 is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive inverters, and industrial DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for IRF730 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF730 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, rugged switching in commercial-industrial power conversion systems up to 50 W dissipation.

FAQ

What is the maximum continuous drain current for the IRF730 at 100 °C case temperature?

The IRF730 supports 3.5 A continuous drain current at T_C = 100 °C, derated from 5.5 A at 25 °C using a linear derating factor of 0.59 W/°C. This reflects thermal limitation of the TO-220AB package, not silicon capability. Designers must verify heatsink interface resistance and ambient airflow to maintain safe junction temperature below 150 °C in the final application.

Does the IRF730 have a specified repetitive avalanche rating?

Yes, the IRF730 is explicitly rated for repetitive avalanche operation: I_AR = 5.5 A and E_AR = 7.4 mJ (pulse width limited by maximum junction temperature). This rating is confirmed in the Absolute Maximum Ratings table and supported by Fig. 12c in the Vishay datasheet S21-0853-Rev. D. It enables reliable use in flyback and forward converters without external clamping components.

What is the gate-source threshold voltage range for the IRF730?

The IRF730 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This standard threshold ensures compatibility with 5 V and 10 V gate drivers while maintaining noise immunity-critical for industrial environments where EMI may induce spurious turn-on.

Is the IRF730PbF-BE3 RoHS-compliant and halogen-free?

Yes, the IRF730PbF-BE3 ordering variant is both lead (Pb)-free and halogen-free, as stated in the Vishay ordering information table. It complies with JEDEC JS709 and IPC-1752 standards. The "BE3" suffix specifically denotes Vishay's halogen-free packaging, distinct from the base IRF730PbF (Pb-free only). Both variants meet RoHS Directive 2011/65/EU.

What is the typical body diode forward voltage of the IRF730 at 5.5 A and 25 °C?

The IRF730 exhibits a typical body diode forward voltage (V_SD) of 1.6 V at I_S = 5.5 A and T_J = 25 °C with V_GS = 0 V, as specified in the "Drain-Source Body Diode Characteristics" table. This value increases with junction temperature and is critical for calculating freewheeling conduction losses in half-bridge and synchronous rectifier topologies.

IRF730 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF730 FAQ

1.How can I place an order for IRF730 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730 reliable?

The price and inventory of IRF730 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730 is usually 5 days.

3.What payment methods are accepted for IRF730?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730?

IRF730 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730?

For technical support, including IRF730 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730 requirements.

6.How does Aetrix verify that IRF730 is sourced from the original manufacturer or authorized distributors?

All IRF730 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730 meets industry standards.

7.What is the process for return or replacement of IRF730?

All IRF730 units undergo pre-shipment inspection (PSI). If there is an issue with IRF730, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730 part is unused and in its original packaging.

Return procedure for IRF730:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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