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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730A

Name: IRF730A
Brand: Vishay Siliconix
SKU: IRF730A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF730A.pdf

Description:: MOSFET N-CH 400V 5.5A TO220AB

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Product details

Overview

IRF730A from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in TO-220AB package, featuring 1.0 Ω R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy-designed for high-voltage flyback and forward SMPS transformer reset circuits.

For engineers reviewing the IRF730A datasheet, IRF730A pinout, IRF730A application, or IRF730A equivalent, this device supports stable high-speed switching in uninterruptible power supplies and industrial DC-DC converters where ruggedness against dV/dt stress and repetitive avalanche operation is required.

Technical Context

The IRF730A employs a planar vertical DMOS structure optimized for high-voltage blocking and controlled avalanche performance. Its gate threshold voltage (2.0–4.5 V) enables standard 10 V gate drive compatibility, while its low Q_gd/Q_g ratio (9.3/22 nC) supports fast, controllable turn-off in hard-switched topologies.

Thermal design is enabled by a 1.70 °C/W junction-to-case thermal resistance and 74 W maximum power dissipation at T_C = 25 °C. The integral body diode exhibits 370–550 ns reverse recovery time and 1.6 V forward drop at 5.5 A, supporting synchronous rectification evaluation in quasi-resonant designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 230 VAC offline SMPS with ≥2× safety margin
R_DS(on)	1.0 Ω @ V_GS = 10 V - limits conduction loss to ≤30 W at 5.5 A continuous drain current
Q_g	22 nC - enables simple gate driver selection (e.g., TC4420) without active Miller clamping
E_AS	290 mJ - sustains unclamped inductive switching events in transformer-reset topologies
dV/dt rating	4.6 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transients
T_J range	−55 to +150 °C - qualified for industrial ambient and thermally constrained enclosures

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.70 °C/W R_thJC, and 10 lbf·in mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 5.8 nC Q_gs enables fast turn-on with minimal overshoot
D (Drain)	High-voltage output terminal	Connected to transformer primary or bus rail; electrically tied to metal tab for heatsinking
S (Source)	Power return/reference node	Provides low-impedance path to ground or controller reference; body diode anode

Key Features

Feature	Design Value
Low gate charge (Q_g = 22 nC)	Reduces gate driver power loss and simplifies PCB layout by minimizing trace inductance sensitivity
Fully characterized C_oss and C_{oss eff.}	Enables accurate snubber design and soft-switching analysis across 1–320 V V_DS range
Specified peak diode recovery dV/dt (4.6 V/ns)	Validates robustness against false triggering during body diode commutation in asymmetric topologies
Repetitive avalanche rated (I_AR = 5.5 A, E_AR = 7.4 mJ)	Supports reliable operation under transient overloads without derating or external clamping

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Single-transistor flyback converter with 230 VAC input and 400 V bulk capacitor. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling transformer reset and energy transfer. Use Value: 400 V V_DS rating and 290 mJ E_AS ensure safe operation during line surges and startup transients.	Use Scenario: Online double-conversion UPS inverter stage with battery backup and AC regeneration. IC Role / Device Role / Timing Role: High-side switching element in half-bridge output stage driving transformer-coupled output filter. Use Value: 5.5 A continuous ID and 1.0 Ω R_DS(on) minimize conduction loss at 50/60 Hz PWM frequencies.
Industrial Motor Drive	High-Voltage DC-DC Converter
Use Scenario: Brake chopper circuit dissipating regenerative energy from 400 V DC bus in servo drives. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing motor back-EMF during deceleration. Use Value: Repetitive avalanche capability (I_AR = 5.5 A) eliminates need for external TVS or Zener clamps.	Use Scenario: Isolated 48 V to 380 V boost converter for telecom rectifier systems. IC Role / Device Role / Timing Role: Main power switch in hard-switched forward topology with active clamp reset. Use Value: Low Q_gd/Q_g ratio (9.3/22 nC) enables precise dead-time control and reduced shoot-through risk.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Single-transistor flyback converter with 230 VAC input and 400 V bulk capacitor.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling transformer reset and energy transfer.

Use Value: 400 V V_DS rating and 290 mJ E_AS ensure safe operation during line surges and startup transients.

Use Scenario: Online double-conversion UPS inverter stage with battery backup and AC regeneration.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge output stage driving transformer-coupled output filter.

Use Value: 5.5 A continuous ID and 1.0 Ω R_DS(on) minimize conduction loss at 50/60 Hz PWM frequencies.

Industrial Motor Drive

High-Voltage DC-DC Converter

Use Scenario: Brake chopper circuit dissipating regenerative energy from 400 V DC bus in servo drives.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing motor back-EMF during deceleration.

Use Value: Repetitive avalanche capability (I_AR = 5.5 A) eliminates need for external TVS or Zener clamps.

Use Scenario: Isolated 48 V to 380 V boost converter for telecom rectifier systems.

IC Role / Device Role / Timing Role: Main power switch in hard-switched forward topology with active clamp reset.

Use Value: Low Q_gd/Q_g ratio (9.3/22 nC) enables precise dead-time control and reduced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4.0 A I_D, 1.5 Ω R_DS(on), TO-220FP package (full-pack)	Lower current rating and higher on-resistance; requires thermal derating above 60 °C case temperature	Preferred where higher voltage margin is critical and peak current remains below 4 A
IXTP50N10P	100 V V_DS, 50 A I_D, 0.027 Ω R_DS(on), TO-220AB package	Not suitable for 400 V applications; intended for low-voltage, high-current DC-DC stages	Only applicable in secondary-side synchronous rectification or low-voltage bus switching

Compared with STP4NK50ZFP and IXTP50N10P, the IRF730A uniquely balances 400 V blocking, 5.5 A current, and TO-220AB thermal performance for primary-side SMPS use-neither alternative matches its voltage-current-ruggedness triad in the same package.

Availability

IRF730A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF730A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRF730A belongs to Vishay's high-voltage planar MOSFET product line, engineered for transformer-reset SMPS topologies where avalanche endurance, dV/dt immunity, and consistent R_DS(on) stability across temperature are essential.

FAQ

What is the maximum continuous drain current for the IRF730A at 100 °C case temperature?

The IRF730A supports 3.5 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within −55 to +150 °C operating range. At 25 °C case temperature, the IRF730A delivers 5.5 A continuously. Designers must verify heatsink sizing using R_thJC = 1.70 °C/W and system airflow conditions before finalizing layout.

Does the IRF730A have a fully specified body diode recovery characteristic?

Yes, the IRF730A datasheet specifies trr = 370–550 ns and Qrr = 1.6–2.4 μC at T_J = 25 °C, I_F = 3.5 A, and dI/dt = 100 A/μs. These values are measured under controlled conditions and enable accurate estimation of reverse recovery losses in hard-switched converters. The body diode forward voltage is also characterized at V_SD = 1.6 V (T_J = 25 °C, I_S = 5.5 A), confirming suitability for freewheeling roles in non-synchronous topologies.

Is the IRF730A RoHS-compliant and halogen-free?

Yes, the IRF730A ordering variant IRF730APbF-BE3 is both lead (Pb)-free and halogen-free, meeting Vishay's material categorization standards per document 99912. The "BE3" suffix explicitly denotes halogen-free construction with matte tin lead finish. Standard IRF730APbF is Pb-free but not halogen-free. Both variants comply with RoHS Directive 2011/65/EU, and full compliance documentation is available via Vishay's website using document number 91045.

What is the gate-source threshold voltage range for the IRF730A?

The IRF730A has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V, tested at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excursions. The typical value falls near 3.2 V, and the parameter is guaranteed across the full −55 to +150 °C junction temperature range, supporting stable operation in industrial environments.

Can the IRF730A be used in avalanche-mode operation, and what energy level is rated?

Yes, the IRF730A is fully rated for repetitive avalanche operation with I_AR = 5.5 A and E_AR = 7.4 mJ, and for single-pulse avalanche with E_AS = 290 mJ (T_J = 25 °C, L = 19 mH, R_g = 25 Ω). These values are validated per JEDEC JESD24-11 and allow use in transformer-reset and inductive load switching without external clamping. Avalanche performance is characterized across temperature and pulse width, making the IRF730A suitable for ruggedized industrial power designs where fault tolerance is critical.

IRF730A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF730A FAQ

1.How can I place an order for IRF730A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730A reliable?

The price and inventory of IRF730A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730A is usually 5 days.

3.What payment methods are accepted for IRF730A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730A?

IRF730A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730A?

For technical support, including IRF730A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730A requirements.

6.How does Aetrix verify that IRF730A is sourced from the original manufacturer or authorized distributors?

All IRF730A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730A meets industry standards.

7.What is the process for return or replacement of IRF730A?

All IRF730A units undergo pre-shipment inspection (PSI). If there is an issue with IRF730A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730A part is unused and in its original packaging.

Return procedure for IRF730A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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