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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730AL

Name: IRF730AL
Brand: Vishay Siliconix
SKU: IRF730AL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730AL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF730AL.pdf

Description:: MOSFET N-CH 400V 5.5A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF730AL from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in I2PAK (TO-262) package, optimized for high-voltage switching in flyback and forward SMPS topologies with 1.0 Ω R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy - deployed in uninterruptible power supplies and industrial DC-DC converters.

For engineers reviewing the IRF730AL datasheet, IRF730AL pinout, IRF730AL application, or IRF730AL equivalent, this page delivers verified electrical ratings, thermal resistance (R_thJC = 1.7 °C/W), diode recovery characteristics (t_rr = 370–550 ns), safe operating area limits, and real-world SMPS topology compatibility - all confirmed from Vishay's official S21-0901-Rev. D specification.

Technical Context

This device employs a planar vertical DMOS structure enabling stable 400 V drain-source breakdown voltage with ±30 V gate-source rating and low 5.8 nC gate-source charge. Its 9.3 nC gate-drain charge and 4.6 V/ns peak diode recovery dV/dt support robust hard-switching operation in high-frequency power converters.

The integrated body diode exhibits 1.6 V forward voltage at 5.5 A and 370–550 ns reverse recovery time under 100 A/μs dI/dt, while the 1.7 °C/W junction-to-case thermal resistance enables high-power dissipation (74 W at T_C = 25 °C) without forced cooling in properly heatsinked I2PAK layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in universal-input offline SMPS up to 375 V DC bus
R_DS(on) max	1.0 Ω @ V_GS = 10 V - enables <5.5 A continuous conduction with ≤30 W conduction loss at full load
Q_g max	22 nC - determines gate driver current requirement (~1.1 A avg. for 20 ns turn-on)
E_AS	290 mJ - withstands unclamped inductive energy during startup/fault in flyback transformers
R_thJC	1.7 °C/W - allows 74 W power dissipation with ≤127 °C junction rise above 25 °C case temperature
t_rr	370–550 ns - defines minimum dead-time needed to prevent shoot-through in synchronous rectification
I_D cont.	5.5 A @ T_C = 25 °C - sets maximum RMS current capability in thermally managed PCB mount

Pinout & Package

I2PAK (TO-262) package with isolated tab (drain-connected), 3-pin through-hole compatible footprint, 13.46 mm × 10.67 mm outline, and 1.78 mm lead length per Vishay drawing 5977.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; requires <22 nC charge for full switching
D (Drain)	High-voltage power terminal	Connected to transformer primary or DC bus; electrically tied to metal tab for thermal path
S (Source)	Power return and reference	Provides ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	22 nC / 9.3 nC = 2.36 - improves Miller immunity and reduces turn-off delay in high-dV/dt environments
Characterized C_{oss eff.}	45 pF - enables accurate snubber design and soft-switching analysis across 0–320 V V_DS
Avalanche-rated construction	290 mJ E_AS, 5.5 A I_AR - eliminates need for external clamping in transformer reset circuits
Body diode t_rr & Q_rr	370–550 ns t_rr, 1.6–2.4 μC Q_rr - permits use in quasi-resonant flyback without secondary sync rectifier
RoHS-compliant variant	SiHF730AL-GE3 available - meets EU directive with matte tin lead finish and halogen-free molding compound

Applications

AC-DC Flyback Converter	Industrial UPS Inverter Stage
Use Scenario: Primary-side switch in 60–150 W offline flyback power supply with universal AC input (85–265 V_AC). IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V blocking and 5.5 A peak primary current during 50–100 kHz PWM cycles. Use Value: 290 mJ avalanche energy absorbs transformer leakage inductance spikes without snubber losses; 1.0 Ω R_DS(on) keeps conduction loss below 30 W at full load.	Use Scenario: DC bus switch in line-interactive UPS output inverter driving 120/230 V AC loads. IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 350 V DC link, switching at 16–20 kHz with 50% duty cycle. Use Value: 4.6 V/ns diode dV/dt rating prevents false turn-on during commutation; 1.7 °C/W R_thJC sustains 74 W dissipation with passive heatsinking.
DC-DC Forward Converter	High-Voltage LED Driver
Use Scenario: Main switch in single-transistor forward converter for telecom 48 V distribution systems. IC Role / Device Role / Timing Role: Unidirectional power switch resetting transformer core via auxiliary winding, conducting for ≤50% duty cycle at 200–500 kHz. Use Value: Fully characterized C_iss/C_oss/C_rss enables precise zero-voltage switching timing; 22 nC Q_g ensures clean edge control with standard gate drivers.	Use Scenario: Constant-current switch in 300–400 V string LED driver for street lighting. IC Role / Device Role / Timing Role: Series-pass regulator controlling 350 mA–1 A LED current by modulating duty cycle at 1–10 kHz. Use Value: 5.5 A pulsed rating handles 10× surge currents during cold-start; 1.6 V V_SD minimizes forward drop penalty in linear-regulated segments.

AC-DC Flyback Converter

Industrial UPS Inverter Stage

Use Scenario: Primary-side switch in 60–150 W offline flyback power supply with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V blocking and 5.5 A peak primary current during 50–100 kHz PWM cycles.

Use Value: 290 mJ avalanche energy absorbs transformer leakage inductance spikes without snubber losses; 1.0 Ω R_DS(on) keeps conduction loss below 30 W at full load.

Use Scenario: DC bus switch in line-interactive UPS output inverter driving 120/230 V AC loads.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 350 V DC link, switching at 16–20 kHz with 50% duty cycle.

Use Value: 4.6 V/ns diode dV/dt rating prevents false turn-on during commutation; 1.7 °C/W R_thJC sustains 74 W dissipation with passive heatsinking.

DC-DC Forward Converter

High-Voltage LED Driver

Use Scenario: Main switch in single-transistor forward converter for telecom 48 V distribution systems.

IC Role / Device Role / Timing Role: Unidirectional power switch resetting transformer core via auxiliary winding, conducting for ≤50% duty cycle at 200–500 kHz.

Use Value: Fully characterized C_iss/C_oss/C_rss enables precise zero-voltage switching timing; 22 nC Q_g ensures clean edge control with standard gate drivers.

Use Scenario: Constant-current switch in 300–400 V string LED driver for street lighting.

IC Role / Device Role / Timing Role: Series-pass regulator controlling 350 mA–1 A LED current by modulating duty cycle at 1–10 kHz.

Use Value: 5.5 A pulsed rating handles 10× surge currents during cold-start; 1.6 V V_SD minimizes forward drop penalty in linear-regulated segments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40Z	400 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 12 nC, TO-220 package	Lower current rating and higher on-resistance; smaller thermal mass	Preferred where lower gate drive demand outweighs conduction loss and thermal performance trade-offs
IXTP4N40P	400 V, 4.0 A, R_DS(on) = 1.2 Ω, Q_g = 16 nC, TO-220 package	Moderate current and gate charge; lacks specified avalanche energy rating	Selected when cost sensitivity dominates over ruggedness requirements in non-critical SMPS designs

Compared with STP4NK40Z and IXTP4N40P, the IRF730AL delivers superior thermal performance (1.7 °C/W vs. ~2.5–3.0 °C/W), higher continuous current (5.5 A), and guaranteed 290 mJ avalanche capability - making it the preferred choice for industrial-grade SMPS and UPS where reliability under transient stress is mandatory.

Availability

IRF730AL is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for IRF730AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-voltage, and thermally efficient devices.

The IRF730AL belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline AC-DC and isolated DC-DC converters operating up to 400 V.

FAQ

What is the maximum continuous drain current rating for IRF730AL at 100 °C case temperature?

The IRF730AL supports 3.5 A continuous drain current at T_C = 100 °C, derated linearly from 5.5 A at 25 °C using the 0.6 W/°C derating factor. This value is validated per Vishay S21-0901-Rev. D absolute maximum ratings table and reflects thermal limits of the I2PAK package under sustained conduction conditions. The IRF730AL must be mounted on a minimum 1" square FR-4 PCB or heatsinked to maintain safe junction temperature.

Does IRF730AL have a fully characterized body diode with published reverse recovery parameters?

Yes, the IRF730AL includes full characterization of its integral body diode: t_rr = 370–550 ns, Q_rr = 1.6–2.4 μC, and V_SD = 1.6 V at I_S = 5.5 A and T_J = 25 °C. These values are measured under standardized conditions (T_J = 25 °C, I_F = 3.5 A, dI/dt = 100 A/μs) and appear in the "Drain-Source Body Diode Characteristics" section of the official datasheet. The IRF730AL's diode performance is consistent across all variants in the IRF730A/SiHF730A family.

Is IRF730AL pin-compatible with IRF730AS, and what is the key mechanical difference?

No, IRF730AL and IRF730AS are not pin-compatible: IRF730AL uses I2PAK (TO-262) package with 3.56 mm lead spacing and 13.46 mm body length, while IRF730AS uses D2PAK (TO-263) with surface-mount leads and 2.54 mm pitch. Both share identical die and electrical specs (V_DS, R_DS(on), Q_g, etc.), but the IRF730AL's through-hole I2PAK form factor provides higher mechanical robustness and simplified thermal mounting in high-vibration environments. The IRF730AL datasheet explicitly lists both packages under "Available" in the Product Summary.

What is the gate threshold voltage range for IRF730AL, and how does it affect drive circuit design?

The IRF730AL has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA, per the "Static" specifications table. This means reliable enhancement begins above 2.0 V, but full R_DS(on) conduction requires ≥10 V gate drive. Drive circuits must supply ≥12 V to ensure margin against noise-induced turn-on and achieve the rated 1.0 Ω on-resistance. The IRF730AL is not a logic-level MOSFET; using 5 V microcontroller outputs directly will result in excessive conduction loss and thermal runaway.

Can IRF730AL be used in avalanche-mode operation, and what energy level is guaranteed?

Yes, the IRF730AL is rated for repetitive and single-pulse avalanche operation: single-pulse avalanche energy (E_AS) is guaranteed at 290 mJ, and repetitive avalanche energy (E_AR) is 7.4 mJ, both tested per JEDEC standards with L = 19 mH, R_g = 25 Ω, and I_AS = 5.5 A. These ratings are confirmed in the Absolute Maximum Ratings table and validated in Figure 12c/d of the Vishay S21-0901-Rev. D datasheet. The IRF730AL's avalanche ruggedness eliminates need for external clamps in flyback transformer reset circuits.

IRF730AL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF730AL FAQ

1.How can I place an order for IRF730AL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730AL reliable?

The price and inventory of IRF730AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730AL is usually 5 days.

3.What payment methods are accepted for IRF730AL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730AL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730AL?

IRF730AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730AL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730AL?

For technical support, including IRF730AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730AL requirements.

6.How does Aetrix verify that IRF730AL is sourced from the original manufacturer or authorized distributors?

All IRF730AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730AL meets industry standards.

7.What is the process for return or replacement of IRF730AL?

All IRF730AL units undergo pre-shipment inspection (PSI). If there is an issue with IRF730AL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730AL part is unused and in its original packaging.

Return procedure for IRF730AL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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