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Vishay Siliconix IRF730APBF
- Part No.:
- IRF730APBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF730APBF.pdf
- Description:
- MOSFET N-CH 400V 5.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:329
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Product details
Overview
IRF730APBF from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in flyback and forward SMPS topologies with 1.0 Ω RDS(on) at VGS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy. It serves as the main switching element in offline AC/DC converters requiring robust dV/dt immunity and reliable unclamped inductive switching.
For engineers reviewing the IRF730APBF datasheet, IRF730APBF pinout, IRF730APBF application, or IRF730APBF equivalent, this part is selected for high-reliability 400 V-class power conversion where gate drive simplicity, avalanche ruggedness, and thermal stability across -55 °C to +150 °C operation are critical design requirements.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology with fully characterized Ciss (600 pF), Coss (103 pF), and Crss (4.0 pF) to support accurate snubber and EMI modeling. Its 22 nC Qg and 9.3 nC Qgd enable predictable turn-on/turn-off timing in hard-switched topologies.
The device features improved dynamic dV/dt ruggedness (4.6 V/ns peak diode recovery rate) and specified repetitive avalanche capability (IAR = 5.5 A, EAR = 7.4 mJ), making it suitable for transformer-reset circuits where voltage overshoot and inductive kickback must be managed without external clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Maximum blocking voltage for primary-side switching in universal-input offline SMPS. |
| RDS(on) | 1.0 Ω @ VGS = 10 V - Conduction loss of ~31 W at 5.5 A DC, defining thermal design margin at 74 W PD. |
| Qg | 22 nC - Gate drive energy requirement determines minimum driver current and switching speed trade-offs. |
| EAS | 290 mJ - Single-pulse avalanche energy rating enables safe operation during transformer reset transients. |
| TJ Range | -55 °C to +150 °C - Full operational range supports industrial and telecom power supplies with wide ambient variation. |
| Coss | 103 pF - Output capacitance directly impacts zero-voltage switching feasibility and resonant tank losses. |
| ID (TC=100°C) | 3.5 A - Derated continuous current reflects thermal limit under real heatsink conditions. |
Pinout & Package
IRF730APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. Thermal resistance RthJC is 1.70 °C/W, enabling efficient heat transfer to external heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; 5.8 nC Qgs defines Miller plateau duration and gate resistor selection. |
| D (Drain) | High-side power output | Connected to transformer primary or bus rail; electrically tied to metal tab for thermal conduction. |
| S (Source) | Power return / reference node | Common return for gate drive and current sensing; body diode anode for freewheeling paths. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (22 nC) | Reduces gate driver power loss and simplifies discrete or IC-based drive circuitry in high-frequency SMPS. |
| Specified Coss eff. (45 pF) | Enables accurate prediction of turn-off loss and snubber sizing for 320 V bus applications. |
| Avalanche-rated (EAS = 290 mJ) | Eliminates need for external RCD clamp in single-transistor flyback designs operating up to full load. |
| Improved dV/dt ruggedness (4.6 V/ns) | Prevents false turn-on during fast voltage transients in high-noise power stages without added gate shielding. |
| RoHS-compliant Pb-free finish | Meets IPC-J-STD-020 reflow profile requirements and supports lead-free manufacturing compliance. |
Applications
| Single-Transistor Flyback Converter | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switch in 100–500 W offline flyback converter with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Main power switch controlling energy transfer during duty cycle; handles transformer reset via avalanche conduction. Use Value: 290 mJ EAS allows reliable operation without snubber at full load, reducing component count and board space. |
Use Scenario: DC-DC boost stage and inverter H-bridge switch in line-interactive UPS systems. IC Role / Device Role / Timing Role: High-side switching element managing battery charging and AC inversion; operates in hard-switched mode at 20–50 kHz. Use Value: 400 V VDS rating supports 350 V DC bus with safety margin; 3.5 A ID @ 100 °C ensures thermal headroom during overload events. |
| Industrial SMPS for PLCs | LED Driver with High-Voltage Input |
Use Scenario: 24 V/5 A regulated output supply powering programmable logic controllers in factory automation. IC Role / Device Role / Timing Role: Primary switch in forward converter topology with active reset; manages 400 V transient surges on industrial mains. Use Value: 4.6 V/ns dV/dt rating prevents spurious turn-on during lightning-induced transients, improving system reliability. |
Use Scenario: Constant-current LED driver for street lighting using direct rectified 230 VAC input. IC Role / Device Role / Timing Role: Buck-derived high-side switch regulating LED string current; withstands 350 V peak line voltage. Use Value: 1.0 Ω RDS(on) minimizes conduction loss at 350 V bus, enabling >90% efficiency in 100 W designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4.0 A ID, 45 nC Qg, TO-220FP package (full-pack) | Higher voltage rating but lower current and higher gate charge; requires larger heatsink at same power level. | Preferred when 500 V margin is mandatory and switching frequency is low (<50 kHz). |
| FQP4N40 | 400 V VDS, 4.0 A ID, 25 nC Qg, TO-220 package with non-isolated tab | Same voltage rating but lower current and no specified avalanche energy; tab is electrically connected to drain. | Acceptable for cost-sensitive designs where avalanche stress is absent and isolation is not required. |
Compared with STP4NK50ZFP and FQP4N40, the IRF730APBF offers superior avalanche ruggedness (290 mJ vs. unspecified/none) and higher continuous current (5.5 A vs. 4.0 A), making it the preferred choice for transformer-reset topologies demanding proven unclamped inductive switching capability.
Availability
IRF730APBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRF730APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF730APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for robust performance in offline AC/DC conversion, emphasizing avalanche survivability, gate drive simplicity, and thermal stability.
FAQ
What is the maximum continuous drain current for IRF730APBF at 100 °C case temperature?
The IRF730APBF supports a continuous drain current of 3.5 A when the case temperature (TC) is maintained at 100 °C. This derating reflects thermal limits imposed by its 1.70 °C/W junction-to-case resistance and 74 W maximum power dissipation at TC = 25 °C. Designers must ensure adequate heatsinking to sustain this current without exceeding the 150 °C maximum junction temperature.
Does IRF730APBF have a fully rated avalanche capability, and what is its single-pulse energy rating?
Yes, the IRF730APBF is fully characterized for avalanche operation with a single-pulse avalanche energy (EAS) rating of 290 mJ under defined test conditions (L = 19 mH, Rg = 25 Ω, IAS = 5.5 A). This specification is measured and guaranteed per Vishay document 91045, enabling confident use in transformer-reset topologies without external clamping components.
What is the gate-source threshold voltage range for IRF730APBF, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for IRF730APBF is specified from 2.0 V to 4.5 V at TJ = 25 °C and ID = 250 μA. This range confirms standard-level (not logic-level) operation, requiring a minimum 10 V gate drive to achieve the rated 1.0 Ω RDS(on). Drive circuits must deliver ≥10 V with sufficient current to charge 22 nC Qg within desired switching times.
Is IRF730APBF compatible with lead-free reflow soldering processes?
Yes, IRF730APBF is RoHS-compliant and Pb-free, qualified for standard lead-free reflow profiles with peak temperature up to 300 °C for 10 seconds. Its TO-220AB package meets IPC-J-STD-020 requirements, and the device is marked "PbF" to indicate lead-free terminations per Vishay's material categorization guidelines.
How does the effective output capacitance (Coss eff.) of IRF730APBF differ from its small-signal Coss, and why does it matter?
The IRF730APBF specifies both small-signal Coss (103 pF at VDS = 25 V) and effective output capacitance Coss eff. (45 pF), which represents the fixed capacitance yielding the same charging time as actual Coss while VDS rises from 0 % to 80 % of 320 V. Coss eff. is critical for calculating turn-off loss and designing ZVS transitions in resonant converters, where nonlinear Coss behavior dominates energy dissipation.
IRF730APBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF730APBF FAQ
1.How can I place an order for IRF730APBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730APBF reliable?
The price and inventory of IRF730APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730APBF is usually 5 days.
3.What payment methods are accepted for IRF730APBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730APBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730APBF?
IRF730APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730APBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730APBF?
For technical support, including IRF730APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730APBF requirements.
6.How does Aetrix verify that IRF730APBF is sourced from the original manufacturer or authorized distributors?
All IRF730APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730APBF meets industry standards.
7.What is the process for return or replacement of IRF730APBF?
All IRF730APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730APBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730APBF part is unused and in its original packaging.
Return procedure for IRF730APBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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