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Vishay Siliconix IRF730AS
- Part No.:
- IRF730AS
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730AS.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,038
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Product details
Overview
IRF730AS from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in flyback and forward SMPS topologies. It features 1.0 Ω RDS(on) at VGS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy - enabling robust unclamped inductive switching in offline power supplies.
For engineers reviewing the IRF730AS datasheet, IRF730AS pinout, IRF730AS application, or IRF730AS equivalent, key selection criteria include its 400 V VDS, 1.7 °C/W RthJC, dV/dt ruggedness of 4.6 V/ns, body diode trr of 370–550 ns, and suitability for 22 A pulsed drain current in UPS and industrial SMPS designs.
Technical Context
This MOSFET employs planar vertical DMOS technology with fully characterized Ciss, Coss, and Crss to support accurate snubber and gate drive design. Its gate threshold voltage (2.0–4.5 V) and low Qgd/Qgs ratio (9.3/5.8 nC) enable stable hard-switching operation without spurious turn-on under high dV/dt stress.
The device integrates an intrinsic body diode rated for 5.5 A continuous and 22 A pulsed conduction, with specified reverse recovery charge (Qrr = 1.6–2.4 μC) and peak dI/dt capability of 90 A/μs - critical for synchronous rectification and freewheeling paths in high-frequency converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 230 VAC mains-derived DC bus with 2× safety margin |
| RDS(on) max | 1.0 Ω @ VGS = 10 V - limits conduction loss to ≤30 W at 5.5 A in TO-263 package |
| Qg max | 22 nC - enables gate drive with <1 W average power using standard 12 V logic-level drivers |
| EAS | 290 mJ - sustains unclamped inductive switching up to 5.5 A without failure |
| RthJC | 1.7 °C/W - allows 74 W dissipation at 25 °C case temperature with minimal heatsink |
| trr | 370–550 ns - defines minimum dead-time requirement in half-bridge configurations |
| ID (TC = 100 °C) | 3.5 A - sets thermal derating limit for continuous operation in enclosed enclosures |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically tied to pin 2 and thermally connected to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V drive to achieve full enhancement; requires <22 nC charge for full turn-on |
| D (Drain) | High-side switch node | Connected to primary winding in flyback; handles 400 V blocking and 22 A pulsed current |
| S (Source) | Reference node / return path | Common source for gate drive loop; ties to ground or low-side switch in half-bridge |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (22 nC) | Reduces gate driver power loss and simplifies drive circuitry for 100–500 kHz SMPS |
| Specified Coss eff. (45 pF) | Enables precise calculation of turn-off losses and resonant timing in ZVS circuits |
| Avalanche-rated (EAS = 290 mJ) | Eliminates need for external clamping in transformer reset and inductive load switching |
| Body diode trr & Qrr characterized | Supports reliable freewheeling in non-synchronous topologies without oscillation risk |
| 4.6 V/ns dV/dt ruggedness | Prevents false turn-on during fast voltage transients in high-noise power stages |
Applications
| Offline Flyback Converter | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switch in 100–300 W universal-input AC/DC adapter with transformer reset via primary clamp. IC Role / Device Role: High-voltage switching element handling 400 V DC link and 5.5 A peak primary current. Use Value: 290 mJ EAS absorbs leakage inductance energy without snubber, reducing component count and improving efficiency. |
Use Scenario: Inverter stage switch in line-interactive UPS delivering clean 230 VAC output during brownouts. IC Role / Device Role: Low-loss power switch in half-bridge output stage operating at 20–50 kHz. Use Value: 1.0 Ω RDS(on) and 1.7 °C/W RthJC maintain junction temperature below 125 °C under 3.5 A continuous load. |
| Industrial SMPS | High-Speed DC-DC Converter |
Use Scenario: Main switch in 48 V input telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role: Primary-side MOSFET in forward converter with synchronous rectification on secondary. Use Value: Characterized Qgd/Qgs ratio ensures clean zero-voltage switching transition control at 300 kHz. |
Use Scenario: High-side switch in isolated DC-DC module for FPGA core voltage regulation (0.8–1.2 V @ 50 A). IC Role / Device Role: Fast-turning primary switch enabling tight duty-cycle control in asymmetrical half-bridge topology. Use Value: 370–550 ns body diode trr and 1.6–2.4 μC Qrr allow predictable dead-time setting and minimize shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4 A ID, 1.5 Ω RDS(on), TO-220FP package | Higher voltage rating but lower current and higher on-resistance; through-hole mounting | Choose when 500 V margin is required and board space permits larger footprint |
| IXTP50N10P | 100 V VDS, 50 A ID, 0.027 Ω RDS(on), TO-220 package | Lower voltage, much higher current; unsuitable for 400 V bus applications | Select only for low-voltage, high-current DC-DC stages - not a functional substitute for IRF730AS |
Compared with STP4NK50ZFP, IRF730AS offers 15% lower RDS(on) and surface-mount D2PAK packaging for automated assembly; versus IXTP50N10P, IRF730AS provides essential 400 V blocking capability absent in the 100 V device - making it the only viable option for universal-input offline power conversion.
Availability
IRF730AS is available at Aetrix Electronics and suitable for offline flyback converters, uninterruptible power supplies, and industrial SMPS requiring stable component supply with RoHS-compliant, lead-free termination.
Supply support for IRF730AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRF730AS belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in 100–500 W offline power supplies and industrial power conversion systems.
FAQ
What is the maximum continuous drain current for IRF730AS at 100 °C case temperature?
The IRF730AS supports 3.5 A continuous drain current when the case temperature is maintained at 100 °C. This value is derived from thermal derating of its 5.5 A rating at 25 °C, using the linear derating factor of 0.6 W/°C and its 1.7 °C/W junction-to-case thermal resistance. Operation above this current at elevated temperatures risks exceeding the 150 °C maximum junction temperature limit.
Does IRF730AS have a fully characterized body diode, and what are its key parameters?
Yes, the IRF730AS includes a fully characterized intrinsic body diode with published parameters: 5.5 A continuous source-drain current, 22 A pulsed rating, 1.6 V forward voltage at 5.5 A and 25 °C, 370–550 ns reverse recovery time, and 1.6–2.4 μC reverse recovery charge. These values are measured under standardized conditions (TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs) and enable accurate freewheeling loss estimation.
What is the gate threshold voltage range for IRF730AS, and how does it affect drive requirements?
The IRF730AS has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at ID = 250 μA. This wide spread means gate drive must exceed 4.5 V to ensure consistent enhancement across unit-to-unit variation. For reliable full conduction, a 10 V gate drive is specified - achieving 1.0 Ω RDS(on) and minimizing conduction losses in the IRF730AS.
Can IRF730AS be used in avalanche mode, and what is its single-pulse energy rating?
Yes, the IRF730AS is rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (EAS) is 290 mJ under test conditions of IAS = 5.5 A, L = 19 mH, and Rg = 25 Ω. This rating validates its use in transformer-reset circuits and inductive load switching where voltage spikes exceed VDS, eliminating the need for external clamping components in many designs.
What package type is IRF730AS supplied in, and what are its thermal characteristics?
The IRF730AS is supplied in the D2PAK (TO-263) surface-mount package with an exposed drain pad. Its thermal resistance from junction to case (RthJC) is 1.7 °C/W, and junction-to-ambient (RthJA) is 40 °C/W on a 1" square FR-4 PCB. The D2PAK footprint enables high-power density layouts while supporting >70 W dissipation with appropriate copper area and thermal vias beneath the drain pad.
IRF730AS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730AS FAQ
1.How can I place an order for IRF730AS through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730AS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730AS reliable?
The price and inventory of IRF730AS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730AS is usually 5 days.
3.What payment methods are accepted for IRF730AS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730AS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730AS?
IRF730AS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730AS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730AS?
For technical support, including IRF730AS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730AS requirements.
6.How does Aetrix verify that IRF730AS is sourced from the original manufacturer or authorized distributors?
All IRF730AS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730AS meets industry standards.
7.What is the process for return or replacement of IRF730AS?
All IRF730AS units undergo pre-shipment inspection (PSI). If there is an issue with IRF730AS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730AS part is unused and in its original packaging.
Return procedure for IRF730AS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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