My Inquiry
My Account
Vishay Siliconix IRF730ASTRL
- Part No.:
- IRF730ASTRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730ASTRL.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,410
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF730ASTRL from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in flyback and forward SMPS topologies with 1.0 Ω RDS(on) at VGS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy. It serves as the main switching element in offline AC/DC converters requiring ruggedness against voltage transients and fast diode recovery.
For engineers reviewing the IRF730ASTRL datasheet, IRF730ASTRL pinout, IRF730ASTRL application, or IRF730ASTRL equivalent, key selection criteria include its 400 V VDS, 1.0 Ω on-resistance at 10 V drive, 370–550 ns body diode reverse recovery time, 4.6 V/ns peak diode dV/dt rating, and D2PAK thermal performance with RthJC = 1.7 °C/W - all critical for reliable high-frequency, high-voltage power conversion design.
Technical Context
This MOSFET employs a planar silicon process with fully characterized avalanche capability and effective output capacitance (Coss eff. = 45 pF), enabling predictable snubberless operation in clamped inductive switching. Its gate threshold voltage (2.0–4.5 V) and low Qgd/Qgs ratio (9.3/5.8 nC) support stable hard-switching control without spurious turn-on.
The integrated body diode exhibits 1.6 V forward drop at 5.5 A and 370–550 ns reverse recovery time under 100 A/μs dI/dt - parameters directly validated per unclamped inductive test conditions (IAS = 5.5 A, L = 19 mH). Thermal resistance from junction-to-case is fixed at 1.7 °C/W, confirming suitability for PCB-mounted heatsinking in compact power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 230 VAC line-derived DC bus with ≥2× safety margin for transient overvoltage handling |
| RDS(on) max | 1.0 Ω @ VGS = 10 V - enables <1.0 W conduction loss at 3.3 A DC current in continuous conduction mode |
| Qg max | 22 nC - determines gate driver current requirement (~2.2 mA avg. for 100 kHz switching with 10 V swing) |
| EAS | 290 mJ - specifies single-pulse unclamped inductive energy handling without failure at TJ = 25 °C |
| dV/dt rating | 4.6 V/ns - defines maximum tolerable rate of voltage rise across drain-source during diode commutation |
| RthJC | 1.7 °C/W - allows ~43 W power dissipation before reaching 150 °C junction limit with 74 °C case temperature |
| ID cont. | 5.5 A @ TC = 25 °C - sets maximum continuous current under ideal heatsink conditions |
| VGS(th) | 2.0–4.5 V - ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding accidental activation |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated heat slug (drain-connected tab), 3-pin configuration, and JEDEC-compliant outline per document 91364. Thermal pad requires soldered copper area for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage signal to modulate channel conductivity; requires low-impedance drive due to 22 nC Qg |
| D (Drain) | High-side power terminal | Connected to primary winding and HV DC bus; electrically tied to exposed thermal pad |
| S (Source) | Reference terminal | Serves as return path for load current and gate drive reference; forms Kelvin source for accurate current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 22 nC) | Reduces gate driver power loss and simplifies drive circuitry for 5–100 kHz SMPS operation |
| Specified effective Coss (45 pF) | Enables accurate snubber design and predictable turn-off loss calculation in hard-switched topologies |
| Characterized avalanche voltage/current | Supports robust operation in unclamped inductive switching without external protection components |
| Improved dynamic dV/dt ruggedness | Prevents false turn-on during high dv/dt transitions in transformer reset phases |
| Body diode trr = 370–550 ns | Minimizes switching loss and EMI during synchronous rectification or freewheeling in forward/flyback converters |
Applications
| Offline Flyback Converter | Single-Transistor Forward Supply |
|---|---|
Use Scenario: 230 VAC input, 12 V/3 A isolated output, 65 kHz switching frequency with transformer reset via auxiliary winding. IC Role / Device Role / Timing Role: Primary-side switching transistor controlling energy transfer; operates in discontinuous conduction mode with voltage clamp during reset. Use Value: 400 V VDS and 290 mJ EAS ensure safe operation during reflected output voltage spikes and leakage inductance ringing. | Use Scenario: Universal-input (85–265 VAC) 24 V/5 A industrial power supply using single-transistor forward topology with active reset. IC Role / Device Role / Timing Role: Main switch conducting during duty cycle; subjected to full DC bus voltage during off-time with controlled reset waveform. Use Value: 1.0 Ω RDS(on) limits conduction loss to <1.1 W at 5.5 A, while 4.6 V/ns dV/dt rating prevents parasitic turn-on during fast reset transitions. |
| Uninterruptible Power Supply (UPS) | High-Voltage DC-DC Boost Stage |
Use Scenario: Line-interactive UPS with battery backup, where IRF730ASTRL switches AC line to inverter input during outage. IC Role / Device Role / Timing Role: High-side AC switching element in static bypass or inverter input stage; handles 350 V peak line voltage. Use Value: Confirmed 150 °C maximum junction temperature and -55 °C minimum storage rating support wide ambient operation in telecom-grade UPS enclosures. | Use Scenario: 48 V input to 400 V output boost converter for EV charging pre-regulator or solar microinverter front-end. IC Role / Device Role / Timing Role: Main boost switch operating at 30–100 kHz; subjected to high voltage stress during off-state and high current during on-state. Use Value: Fully characterized Ciss/Coss/Crss (600/103/4.0 pF) enables precise loss modeling and EMI filter design for CISPR-22 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK60ZFP | 600 V VDS, 3.8 Ω RDS(on), TO-220FP package, lower Qg (12 nC) | Higher voltage rating but higher on-resistance; through-hole mounting only | Preferred when 600 V margin is mandatory and board space allows TO-220 footprint |
| IXTP4N50D2 | 500 V VDS, 2.5 Ω RDS(on), TO-220 package, 100% avalanche rated | Higher voltage and ruggedness spec, but larger package and no D2PAK thermal advantage | Chosen for designs requiring guaranteed avalanche energy >500 mJ and legacy through-hole assembly |
Compared with STP4NK60ZFP and IXTP4N50D2, IRF730ASTRL offers superior thermal resistance (1.7 °C/W vs. ~3.5 °C/W for TO-220 variants) and lower conduction loss at 5.5 A, making it optimal for compact, surface-mounted high-frequency SMPS where PCB real estate and thermal management are constrained.
Availability
IRF730ASTRL is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF730ASTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF730AS family was designed specifically for rugged, high-voltage switching in offline AC/DC power conversion, emphasizing avalanche survivability, controlled body diode recovery, and consistent parametric performance across temperature and production lots.
FAQ
What is the maximum continuous drain current rating for IRF730ASTRL at 100 °C case temperature?
The IRF730ASTRL has a maximum continuous drain current (ID) of 3.5 A when the case temperature is maintained at 100 °C. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB layout, copper area, and ambient conditions. The IRF730ASTRL datasheet specifies this value under steady-state conditions with proper heatsinking.
Does IRF730ASTRL have a fully characterized body diode, and what are its key recovery parameters?
Yes, the IRF730ASTRL features a fully characterized intrinsic body diode with reverse recovery time (trr) of 370–550 ns and reverse recovery charge (Qrr) of 1.6–2.4 μC, measured at TJ = 25 °C, IF = 3.5 A, and dI/dt = 100 A/μs. These values are explicitly documented in the Vishay datasheet (document 91046) and apply directly to the IRF730ASTRL device.
Is IRF730ASTRL RoHS-compliant, and what does the 'PbF' suffix indicate?
Yes, IRF730ASTRL is RoHS-compliant. The 'PbF' suffix in IRF730ASTRLPbF denotes lead-free (Pb-free) termination, confirming compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating and meets halogen-free requirements per Vishay specification 99912.
What is the gate-source threshold voltage range for IRF730ASTRL, and how does it affect drive compatibility?
The gate-source threshold voltage (VGS(th)) for IRF730ASTRL is specified from 2.0 V to 4.5 V at ID = 250 μA. This range ensures compatibility with both 3.3 V logic-level drivers (marginally sufficient) and standard 5–10 V gate drivers, while preventing unintended turn-on from noise. The IRF730ASTRL achieves full enhancement at VGS = 10 V, where RDS(on) is guaranteed ≤1.0 Ω.
Can IRF730ASTRL be used in avalanche-mode operation, and what energy level is rated?
Yes, IRF730ASTRL is fully characterized for single-pulse avalanche operation with a rated energy (EAS) of 290 mJ at TJ = 25 °C, IAS = 5.5 A, and L = 19 mH. Repetitive avalanche is rated at 7.4 mJ. These values are measured per JEDEC standard JESD24-1 and apply directly to the IRF730ASTRL part number as confirmed in the official Vishay datasheet.
IRF730ASTRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730ASTRL FAQ
1.How can I place an order for IRF730ASTRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730ASTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730ASTRL reliable?
The price and inventory of IRF730ASTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730ASTRL is usually 5 days.
3.What payment methods are accepted for IRF730ASTRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730ASTRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730ASTRL?
IRF730ASTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730ASTRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730ASTRL?
For technical support, including IRF730ASTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730ASTRL requirements.
6.How does Aetrix verify that IRF730ASTRL is sourced from the original manufacturer or authorized distributors?
All IRF730ASTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730ASTRL meets industry standards.
7.What is the process for return or replacement of IRF730ASTRL?
All IRF730ASTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF730ASTRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730ASTRL part is unused and in its original packaging.
Return procedure for IRF730ASTRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF730ASTRL Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
