Vishay Siliconix IRF730ASTRRPBF
- Part No.:
- IRF730ASTRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730ASTRRPBF.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,674
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF730ASTRRPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in flyback and forward SMPS topologies with 1.0 Ω RDS(on) at VGS = 10 V, 22 nC total gate charge, and 290 mJ single-pulse avalanche energy. It serves as the main switching element in offline AC/DC converters requiring ruggedness against voltage transients and fast diode recovery.
For engineers reviewing the IRF730ASTRRPBF datasheet, IRF730ASTRRPBF pinout, IRF730ASTRRPBF application, or IRF730ASTRRPBF equivalent, key selection criteria include its 400 V VDS, 1.7 °C/W junction-to-case thermal resistance, 370–550 ns body diode reverse recovery time, and suitability for unclamped inductive switching in UPS and industrial power supplies.
Technical Context
This MOSFET employs planar vertical DMOS technology with fully characterized Ciss, Coss, and Crss to support accurate snubber design and EMI prediction. Its gate threshold voltage range (2.0–4.5 V) ensures reliable turn-on under wide input conditions while maintaining noise immunity.
The device integrates an intrinsic body diode with 1.6 V forward voltage at 5.5 A and specified dV/dt ruggedness of 4.6 V/ns, enabling robust operation in hard-switched topologies without external diode supplementation. Avalanche ratings are validated per JEDEC JESD24-1 using unclamped inductive test conditions (L = 19 mH, IAS = 5.5 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 230 VAC mains with ≥2× safety margin in flyback reset circuits |
| RDS(on) max | 1.0 Ω at VGS = 10 V - limits conduction loss to ≤30 W at 5.5 A continuous drain current |
| Qg max | 22 nC - enables drive with standard 1-A gate drivers at 100 kHz switching frequency |
| EAS | 290 mJ - withstands single-pulse inductive energy without failure in transformer reset applications |
| RthJC | 1.7 °C/W - allows 74 W power dissipation with ≤125 °C case temperature rise above ambient |
| trr / Qrr | 370–550 ns / 1.6–2.4 μC - minimizes switching loss and voltage overshoot during diode commutation |
| dV/dt rating | 4.6 V/ns - sustains rapid voltage transients during hard switching without spurious turn-on |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 5.8 nC gate-source charge defines Miller plateau duration |
| D (Drain) | High-side switch node | Connected to transformer primary or bus rail; ties to thermal pad for heat transfer to PCB |
| S (Source) | Power return reference | Provides ground reference for gate drive and current sensing; forms source node for body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (22 nC) | Reduces gate driver power loss and simplifies drive circuitry in high-frequency SMPS |
| Specified Coss eff. (45 pF) | Enables precise calculation of turn-off energy and snubber component sizing |
| Avalanche-rated (290 mJ EAS) | Eliminates need for external clamping in single-transistor forward/flyback topologies |
| Body diode trr ≤ 550 ns | Reduces cross-conduction loss and voltage spike during synchronous rectification transitions |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements for industrial and telecom end equipment |
Applications
| Industrial SMPS | Uninterruptible Power Supply |
|---|---|
Use Scenario: 400 W offline flyback converter for factory automation controllers with universal AC input. IC Role / Device Role / Timing Role: Primary-side switching transistor handling 320 V DC link voltage and 5.5 A peak current. Use Value: 400 V VDS and 290 mJ EAS ensure safe operation during line surges and transformer reset stress without derating. | Use Scenario: Line-interactive UPS inverter stage with battery backup and AC pass-through mode. IC Role / Device Role / Timing Role: High-side switch in half-bridge output stage managing bidirectional power flow. Use Value: 4.6 V/ns dV/dt rating prevents false triggering during fast bus transients during mode switching. |
| AC-DC Adapter | LED Driver Power Stage |
Use Scenario: 65 W compact adapter for medical instrumentation with strict leakage current limits. IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback operating at variable frequency up to 130 kHz. Use Value: Low Qgd/Qgs ratio (9.3/5.8) improves controllability during ZVS transitions and reduces ringing. | Use Scenario: Constant-current LED driver for street lighting with 350 V DC bus and PWM dimming. IC Role / Device Role / Timing Role: Switching element in buck-boost topology regulating 1.5 A output current. Use Value: 1.6 V body diode VSD at 5.5 A lowers conduction loss during freewheeling phase versus Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 4.1 A, RDS(on) = 1.4 Ω, Qg = 12 nC, TO-220FP package | Lower current rating and higher on-resistance; smaller package limits thermal performance | Preferred where lower gate charge reduces driver complexity but board space permits TO-220FP mounting |
| IXTP4N40P | 400 V, 4.0 A, RDS(on) = 1.3 Ω, Qg = 16 nC, TO-220 package | Higher RDS(on), no specified avalanche energy; lacks Coss eff. characterization | Used in cost-sensitive designs where full avalanche ruggedness is not required and layout accommodates through-hole assembly |
Compared with STP4NK40ZFP and IXTP4N40P, IRF730ASTRRPBF delivers higher continuous current (5.5 A vs. ≤4.1 A), lower RDS(on) (1.0 Ω), and verified 290 mJ avalanche capability-making it preferable for thermally constrained, high-reliability SMPS where field-induced voltage spikes must be absorbed internally.
Availability
IRF730ASTRRPBF is available at Aetrix Electronics and suitable for industrial SMPS, uninterruptible power supply systems, and LED driver power stages requiring stable component supply across multi-year production cycles.
Supply support for IRF730ASTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF730AS family was engineered for rugged high-voltage switching in offline power conversion, emphasizing avalanche survivability, low gate charge, and repeatable dynamic performance in transformer-coupled topologies.
FAQ
What is the maximum continuous drain current for IRF730ASTRRPBF at 100 °C case temperature?
The maximum continuous drain current for IRF730ASTRRPBF is 3.5 A when the case temperature is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the -55 °C to +150 °C operating range. The 5.5 A rating applies only at TC = 25 °C.
Does IRF730ASTRRPBF have a fully characterized body diode for synchronous rectification analysis?
Yes, IRF730ASTRRPBF includes full body diode specifications: VSD = 1.6 V at 5.5 A and 25 °C, reverse recovery time trr = 370–550 ns, and reverse recovery charge Qrr = 1.6–2.4 μC. These parameters are measured under standardized conditions (TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs) and support accurate loss modeling in flyback and forward converters.
Is IRF730ASTRRPBF RoHS-compliant and halogen-free?
Yes, IRF730ASTRRPBF is both RoHS-compliant and halogen-free, as confirmed in the Vishay document S21-0901-Rev. D. It meets the material categorization requirements defined in Vishay document 99912 and carries the "-GE3" suffix designation indicating lead-free and halogen-free construction.
What is the thermal resistance from junction to case (RthJC) for IRF730ASTRRPBF?
The maximum junction-to-case thermal resistance (RthJC) for IRF730ASTRRPBF is 1.7 °C/W, measured from the silicon die to the exposed drain pad. This value enables calculation of junction temperature rise under load and informs heatsink or PCB copper area design-e.g., at 74 W dissipation, ΔTJ-C = 126 °C, requiring careful thermal management to stay within 150 °C TJ limit.
Can IRF730ASTRRPBF replace IRF730ASPbF in existing designs?
Yes, IRF730ASTRRPBF is a direct replacement for IRF730ASPbF, sharing identical electrical specifications, D2PAK package outline, pinout, and thermal performance. Both parts belong to the same IRF730AS product family and differ only in tape-and-reel packaging (TRRPBF vs. PbF); no layout or schematic changes are required for migration.
IRF730ASTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730ASTRRPBF FAQ
1.How can I place an order for IRF730ASTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730ASTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730ASTRRPBF reliable?
The price and inventory of IRF730ASTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730ASTRRPBF is usually 5 days.
3.What payment methods are accepted for IRF730ASTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730ASTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730ASTRRPBF?
IRF730ASTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730ASTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730ASTRRPBF?
For technical support, including IRF730ASTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730ASTRRPBF requirements.
6.How does Aetrix verify that IRF730ASTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF730ASTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730ASTRRPBF meets industry standards.
7.What is the process for return or replacement of IRF730ASTRRPBF?
All IRF730ASTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730ASTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730ASTRRPBF part is unused and in its original packaging.
Return procedure for IRF730ASTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF730ASTRRPBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

