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Vishay Siliconix IRF730PBF-BE3
- Part No.:
- IRF730PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF730PBF-BE3.pdf
- Description:
- MOSFET N-CH 400V 5.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,982
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Product details
Overview
IRF730PBF-BE3 from Vishay Siliconix is a 400 V, 5.5 A N-channel power MOSFET in TO-220AB package, featuring 1.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control snubbers, and AC mains-switching circuits.
For engineers reviewing the IRF730PBF-BE3 datasheet, IRF730PBF-BE3 pinout, IRF730PBF-BE3 application, or IRF730PBF-BE3 equivalent, key selection criteria include its 400 V VDS, 1.0 Ω on-resistance at 10 V drive, 290 mJ single-pulse avalanche energy, TO-220AB thermal performance (RthJC = 1.7 °C/W), and lead-free/halogen-free compliance per JEDEC J-STD-020.
Technical Context
This third-generation planar VDMOS device uses ruggedized silicon design with optimized cell layout to sustain repetitive avalanche stress up to 5.5 A and 7.4 mJ without derating. Its dynamic dV/dt rating of 4.0 V/ns supports reliable operation in fast-switching inductive loads.
The MOSFET integrates a low-Qrr (1.8–2.2 μC) body diode with 270–530 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Gate drive simplicity is ensured by a 2.0–4.0 V threshold voltage and low 0.6–2.3 Ω gate input resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 340 VAC rectified bus and 280 VDC industrial supplies with margin |
| RDS(on) | 1.0 Ω @ VGS = 10 V - enables ≤5.5 W conduction loss at 3.3 A continuous drain current |
| Qg | 38 nC - determines gate driver current requirement (~1.9 A peak for 20 ns rise time) |
| EAS | 290 mJ - allows unclamped inductive switching at 5.5 A without failure |
| TJ Range | −55 to +150 °C - qualified for industrial ambient and high-power density heatsink mounting |
| PD | 74 W @ TC = 25 °C - requires ≥1.7 °C/W heatsink for full-rated continuous operation |
| dV/dt | 4.0 V/ns - withstands rapid voltage transients in phase-control and SMPS flyback circuits |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration, 1.7 °C/W junction-to-case thermal resistance, and 62 °C/W junction-to-ambient (no heatsink).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 2.0–4.0 V VGS(th) ensures turn-on with standard microcontroller outputs |
| D (Drain) | High-side power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground |
| S (Source) | Return path / reference node | Serves as local ground reference for gate drive; source inductance (7.5 nH) impacts switching overshoot |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 5.5 A, 7.4 mJ repeated avalanche events without parameter shift or degradation |
| Dynamic dV/dt rating | 4.0 V/ns immunity prevents spurious turn-on during high-slew-rate voltage transients |
| Low Qgd/Qg ratio | 22/38 = 58% - improves Miller immunity and reduces switching instability in high-side configurations |
| RoHS-compliant & halogen-free | IRF730PBF-BE3 meets JEDEC J-STD-020 reflow profile and IPC/JEDEC J-STD-033 handling requirements |
| Fast switching | 10 ns turn-on delay + 15 ns rise time enables >200 kHz operation in hard-switched topologies |
Applications
| Industrial Motor Control | AC Mains Switching |
|---|---|
Use Scenario: Snubberless IGBT gate drive protection and brake chopper in 3-phase inverters driving 0.5–2 kW induction motors. IC Role / Device Role / Timing Role: High-voltage clamp switch absorbing regenerative energy during rapid deceleration. Use Value: 290 mJ EAS eliminates need for external RC snubbers, reducing BOM count and PCB area. | Use Scenario: Solid-state relay replacement in HVAC compressor contactors and lighting ballasts operating directly from 230 VAC mains. IC Role / Device Role / Timing Role: Main power switch controlling load connection/disconnection with zero-crossing synchronization. Use Value: 400 V VDS provides 1.8× safety margin over 230 VAC peak (325 V), ensuring long-term reliability under surge conditions. |
| DC-DC Converter Primary Switch | High-Voltage Power Supply |
Use Scenario: Primary-side switch in 20–50 W offline flyback converters powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Pulse-width modulated high-side switch regulating output via transformer coupling and opto-feedback. Use Value: 38 nC Qg enables efficient 65–100 kHz operation with low-loss gate drive using discrete bipolar drivers. | Use Scenario: Series pass element in programmable 0–400 V DC bench supplies and electroplating rectifiers. IC Role / Device Role / Timing Role: Linear-mode voltage regulator dissipating up to 74 W with active thermal foldback. Use Value: 1.7 °C/W RthJC supports direct-mount heatsinking to achieve stable 150 °C max junction temperature under full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4.0 A ID, 1.7 Ω RDS(on), Zener-protected gate | Higher voltage rating but lower current and higher on-resistance; better suited for 400 V+ flybacks | Select when enhanced overvoltage robustness and integrated gate protection are prioritized over conduction loss |
| FQP4N40 | 400 V VDS, 4.0 A ID, 1.5 Ω RDS(on), TO-220FP package (shorter leads) | Same voltage rating but reduced current capability and higher RDS(on); lower thermal mass | Choose for space-constrained layouts where TO-220FP footprint is required and 3.5 A derated current suffices |
Compared with STP4NK50ZFP and FQP4N40, the IRF730PBF-BE3 delivers superior conduction efficiency at 5.5 A continuous current and proven avalanche ruggedness for inductive load switching-making it optimal for industrial snubbers and mains-connected power stages where reliability under transient stress is critical.
Availability
IRF730PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, AC mains switching, and high-voltage DC-DC converter designs requiring stable component supply across extended production lifecycles.
Supply support for IRF730PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF730PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized high-voltage switching in mains-connected equipment and industrial power conversion systems.
FAQ
What is the maximum continuous drain current for IRF730PBF-BE3 at 100 °C case temperature?
The IRF730PBF-BE3 supports 3.5 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits imposed by the TO-220AB package's 1.7 °C/W junction-to-case resistance and safe operating area constraints. At 25 °C case temperature, the rating rises to 5.5 A. Designers must verify heatsink sizing using actual board layout and airflow conditions before committing to full-rated operation.
Does IRF730PBF-BE3 have an integrated body diode, and what are its key parameters?
Yes, the IRF730PBF-BE3 includes an intrinsic body diode rated for 5.5 A continuous forward current and 22 A pulsed current. Its VSD is 1.6 V at 5.5 A and 25 °C, with reverse recovery time (trr) ranging from 270 to 530 ns and Qrr of 1.8–2.2 μC. These values enable use in freewheeling and synchronous rectification roles, though external Schottky diodes may be preferred for ultra-low-loss applications.
Is IRF730PBF-BE3 pin-compatible with earlier IRF730 variants like IRF730PbF?
Yes, IRF730PBF-BE3 is mechanically and electrically pin-compatible with IRF730PbF and other TO-220AB-packaged IRF730 variants. The "-BE3" suffix denotes lead-free and halogen-free construction per JEDEC J-STD-020, with identical pinout (G-D-S), thermal footprint, and electrical specifications. No PCB layout changes are required for drop-in replacement in existing designs.
What is the gate threshold voltage range for IRF730PBF-BE3, and how does it affect drive circuit design?
The IRF730PBF-BE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature extremes. Driving with only 5 V risks incomplete turn-on and excessive RDS(on), increasing conduction losses. Standard TTL or CMOS logic outputs must be buffered via dedicated gate drivers or level-shifted MOSFET drivers.
How does the repetitive avalanche rating of IRF730PBF-BE3 benefit real-world circuit operation?
The IRF730PBF-BE3 is rated for 5.5 A repetitive avalanche current and 7.4 mJ repetitive avalanche energy, allowing it to safely absorb inductive energy during each switching cycle without degradation. This capability eliminates reliance on external snubbers in motor drive brake circuits and relay-driving applications, improving system efficiency, reducing component count, and enhancing long-term reliability under frequent transient stress-verified per test condition b in the datasheet (VDD = 50 V, L = 16 mH, Rg = 25 Ω).
IRF730PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF730PBF-BE3 FAQ
1.How can I place an order for IRF730PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730PBF-BE3 reliable?
The price and inventory of IRF730PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF730PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730PBF-BE3?
IRF730PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730PBF-BE3?
For technical support, including IRF730PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730PBF-BE3 requirements.
6.How does Aetrix verify that IRF730PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF730PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF730PBF-BE3?
All IRF730PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF730PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF730PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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