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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF730STRL

Name: IRF730STRL
Brand: Vishay Siliconix
SKU: IRF730STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF730STRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF730STRL.pdf

Description:: MOSFET N-CH 400V 5.5A D2PAK

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Product details

Overview

IRF730STRL from Vishay Siliconix is a 400 V, 5.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.0 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating - designed for high-voltage DC-DC converters and offline SMPS primary-side switching.

For engineers reviewing the IRF730STRL datasheet, IRF730STRL pinout, IRF730STRL application, or IRF730STRL equivalent, key selection criteria include its 400 V blocking voltage, 74 W case-mounted power dissipation, dV/dt ruggedness of 4.0 V/ns, and suitability for hard-switched flyback and forward converter topologies requiring robust unclamped inductive switching capability.

Technical Context

This third-generation power MOSFET employs planar silicon technology with optimized die layout for low gate-drain charge (Q_gd = 22 nC) and fast switching (t_r = 15 ns, t_f = 14 ns). Its dynamic dV/dt rating and 290 mJ single-pulse avalanche energy support reliable operation under transient overvoltage conditions without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 270–530 ns, Q_rr = 1.8–2.2 μC) and exhibits stable R_DS(on) temperature coefficient (+0.54 V/°C), enabling predictable conduction loss scaling across -55 °C to +150 °C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 380 VAC rectified input with 20 % margin in offline SMPS
R_DS(on) @ V_GS = 10 V	1.0 Ω - enables ≤ 30 W conduction loss at 5.5 A continuous drain current
Q_g	38 nC - determines gate drive power requirement and switching speed in hard-switched topologies
E_AS	290 mJ - allows safe unclamped inductive turn-off at I_AS = 5.5 A without external clamping
dV/dt Rating	4.0 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients
T_J Range	-55 °C to +150 °C - supports industrial and extended-temperature power supply designs
R_thJC	1.7 °C/W - enables thermal design with heatsink interface for >70 W power handling

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline; 14.61–15.88 mm height; 8.38–9.65 mm width; 9.65–10.67 mm length.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main power output terminal	Exposed copper drain pad - must be soldered to large PCB copper area or heatsink for thermal management and low-inductance return path
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <2.3 Ω series resistance to damp ringing; sensitive to ESD (±20 V max V_GS)
Pin 3 (Source)	Power reference node	Common return for load current and gate drive; internal source inductance (L_S = 7.5 nH) affects switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation in inductive switching circuits without derating for single-event transients (E_AR = 7.4 mJ)
Dynamic dV/dt rating	4.0 V/ns immunity prevents spurious turn-on during high-slew-rate voltage transitions in bridge configurations
Low Q_gd/Q_g ratio	22/38 = 58 % - improves Miller immunity and reduces switching loss sensitivity to V_DS slew rate
Fast body diode recovery	t_rr = 270–530 ns with Q_rr = 1.8–2.2 μC - minimizes reverse recovery loss in synchronous or quasi-resonant topologies
Surface-mount D2PAK	Supports automated assembly and delivers 2.0 W power dissipation on FR-4 PCB without heatsink (per datasheet note)

Applications

Industrial AC-DC Power Supplies	Offline Flyback Converters
Use Scenario: Primary-side switch in 30–60 W universal-input (85–265 VAC) open-frame power supplies for factory automation controllers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 65–100 kHz with hard switching. Use Value: 400 V V_DS and 290 mJ E_AS eliminate need for external RCD clamp in cost-sensitive designs while maintaining safety margin over 375 V peak line voltage.	Use Scenario: Main switch in isolated 12 V/5 A flyback converter powering PoE-powered devices in telecom infrastructure. IC Role / Device Role / Timing Role: Primary-side power FET regulating output via optocoupler feedback; subjected to repetitive unclamped inductive turn-off stress. Use Value: Repetitive avalanche rating (I_AR = 5.5 A, E_AR = 7.4 mJ) ensures long-term reliability under sustained overload and startup surge conditions.
DC-DC Boost Converters	Motor Drive Half-Bridge Stages
Use Scenario: Boost switch in 48 V battery-powered solar charge controller stepping up panel voltage to 350 V bus. IC Role / Device Role / Timing Role: High-side switch operating at 20–50 kHz with 400 V blocking requirement and moderate duty cycle. Use Value: 1.0 Ω R_DS(on) limits conduction loss to <3 W at 5.5 A, while 38 nC Q_g enables efficient gate driving with low-power IC drivers.	Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for HVAC damper actuators. IC Role / Device Role / Timing Role: Ground-referenced switching element controlling motor current direction and braking via PWM. Use Value: Fast switching (t_r/t_f < 30 ns) and low Q_gd reduce shoot-through risk; body diode t_rr < 530 ns ensures clean freewheeling during PWM dead-time.

Industrial AC-DC Power Supplies

Offline Flyback Converters

Use Scenario: Primary-side switch in 30–60 W universal-input (85–265 VAC) open-frame power supplies for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 65–100 kHz with hard switching.

Use Value: 400 V V_DS and 290 mJ E_AS eliminate need for external RCD clamp in cost-sensitive designs while maintaining safety margin over 375 V peak line voltage.

Use Scenario: Main switch in isolated 12 V/5 A flyback converter powering PoE-powered devices in telecom infrastructure.

IC Role / Device Role / Timing Role: Primary-side power FET regulating output via optocoupler feedback; subjected to repetitive unclamped inductive turn-off stress.

Use Value: Repetitive avalanche rating (I_AR = 5.5 A, E_AR = 7.4 mJ) ensures long-term reliability under sustained overload and startup surge conditions.

DC-DC Boost Converters

Motor Drive Half-Bridge Stages

Use Scenario: Boost switch in 48 V battery-powered solar charge controller stepping up panel voltage to 350 V bus.

IC Role / Device Role / Timing Role: High-side switch operating at 20–50 kHz with 400 V blocking requirement and moderate duty cycle.

Use Value: 1.0 Ω R_DS(on) limits conduction loss to <3 W at 5.5 A, while 38 nC Q_g enables efficient gate driving with low-power IC drivers.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for HVAC damper actuators.

IC Role / Device Role / Timing Role: Ground-referenced switching element controlling motor current direction and braking via PWM.

Use Value: Fast switching (t_r/t_f < 30 ns) and low Q_gd reduce shoot-through risk; body diode t_rr < 530 ns ensures clean freewheeling during PWM dead-time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 19 nC, TO-220FP package	Lower current rating and higher on-resistance; smaller package limits thermal performance	Preferred where board space is constrained and lower power (<25 W) suffices; not suitable for same PCB layout due to different footprint
IXTP4N40P	400 V, 4.0 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220 package	Higher R_DS(on), lower ID, no avalanche rating; lacks dV/dt ruggedness spec	Acceptable for non-avalanche-critical linear or low-frequency switching; requires snubber in flyback primary due to missing E_AS spec

Compared with STP4NK40ZFP and IXTP4N40P, the IRF730STRL delivers higher continuous current (5.5 A vs. ≤4.0 A), lower R_DS(on) (1.0 Ω), verified repetitive avalanche capability, and surface-mount D2PAK packaging - making it uniquely suited for high-reliability, medium-power, automated-assembly SMPS designs.

Availability

IRF730STRL is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, offline flyback converters, and DC-DC boost stages requiring stable component supply, RoHS-compliant sourcing, and long-lifecycle availability.

Supply support for IRF730STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF730STRL belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedized, cost-effective switching in offline and DC-DC power conversion systems demanding avalanche tolerance and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current for IRF730STRL at 100 °C case temperature?

The IRF730STRL supports 3.5 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating from 5.5 A at 25 °C reflects thermal limitations of the D2PAK package; proper PCB copper area and heatsinking are required to sustain this current in real-world operation. The IRF730STRL datasheet specifies linear derating factor of 0.59 W/°C above 25 °C case temperature.

Does IRF730STRL have a specified avalanche energy rating?

Yes, the IRF730STRL has both single-pulse and repetitive avalanche energy ratings: E_AS = 290 mJ (single-pulse, test condition V_DD = 50 V, I_AS = 5.5 A) and E_AR = 7.4 mJ (repetitive, pulse width limited by junction temperature). These values are confirmed in the Absolute Maximum Ratings section of the Vishay datasheet S21-0901-Rev. D and validate use in unclamped inductive switching applications without external protection.

What is the gate threshold voltage range for IRF730STRL?

The IRF730STRL has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This standard threshold confirms compatibility with 10 V gate drive logic, and the upper limit ensures noise immunity against spurious turn-on. The IRF730STRL is not a logic-level MOSFET and requires ≥8 V V_GS for full enhancement in practical designs.

Is IRF730STRL RoHS-compliant and halogen-free?

Yes, the IRF730STRL is lead (Pb)-free and halogen-free, designated by the "PbF" suffix in its ordering code (IRF730STRLPbF). It complies with EU RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The device uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60 % RH.

What is the typical body diode reverse recovery time for IRF730STRL?

The IRF730STRL body diode exhibits a typical reverse recovery time (t_rr) of 270 ns, with a maximum of 530 ns, measured at T_J = 25 °C, I_F = 3.5 A, and dI/dt = 100 A/μs. This fast recovery characteristic, combined with Q_rr = 1.8–2.2 μC, reduces switching losses in topologies relying on intrinsic diode conduction, such as asynchronous flyback or half-bridge freewheeling. The IRF730STRL datasheet confirms this in the Dynamic section under Drain-Source Body Diode Characteristics.

IRF730STRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF730STRL FAQ

1.How can I place an order for IRF730STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF730STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF730STRL reliable?

The price and inventory of IRF730STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730STRL is usually 5 days.

3.What payment methods are accepted for IRF730STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF730STRL?

IRF730STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF730STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF730STRL?

For technical support, including IRF730STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730STRL requirements.

6.How does Aetrix verify that IRF730STRL is sourced from the original manufacturer or authorized distributors?

All IRF730STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730STRL meets industry standards.

7.What is the process for return or replacement of IRF730STRL?

All IRF730STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF730STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF730STRL part is unused and in its original packaging.

Return procedure for IRF730STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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