My Inquiry
My Account
Vishay Siliconix IRF730STRLPBF
- Part No.:
- IRF730STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF730STRLPBF.pdf
- Description:
- MOSFET N-CH 400V 5.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,565
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF730STRLPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 1.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating - designed for high-voltage DC-DC converters, AC-DC PFC stages, and industrial motor control inverters.
For engineers reviewing the IRF730STRLPBF datasheet, IRF730STRLPBF pinout, IRF730STRLPBF application, or IRF730STRLPBF equivalent, key selection criteria include its 400 V blocking capability, 74 W case-rated power dissipation, fast switching (10 ns turn-on delay), body diode recovery time under 530 ns, and compatibility with standard gate drivers in hard-switched topologies.
Technical Context
This third-generation TrenchFET® MOSFET uses planar silicon process optimized for ruggedness and dynamic performance. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers, while the 1.7 °C/W junction-to-case thermal resistance supports high-current operation when mounted on thermally enhanced PCBs.
The device integrates a fast-recovery body diode (trr = 270–530 ns, Qrr = 1.8–2.2 μC) and is rated for unclamped inductive switching (EAS = 290 mJ), enabling robust operation in flyback, forward, and resonant converter topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in offline SMPS up to 380 VAC input with margin. |
| RDS(on) | 1.0 Ω @ VGS = 10 V - limits conduction loss to ≤11 W at 3.3 A continuous drain current. |
| Qg | 38 nC - determines gate drive power requirement (~380 μW per MHz of switching frequency). |
| ID (TC = 25 °C) | 5.5 A - enables use in medium-power applications without forced air cooling. |
| EAS | 290 mJ - allows safe energy absorption during inductive turn-off transients in relay drivers or solenoid controls. |
| tr/tf | 15 ns / 14 ns - supports switching frequencies up to 500 kHz with low overlap loss in hard-switched converters. |
| RthJC | 1.7 °C/W - permits 74 W power dissipation with ≤126 °C junction rise above 25 °C case temperature. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with IPC-7351B footprint "D2PAK-HV".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives gate drive signal; requires ≤±20 V rating and low-impedance path to minimize ringing. |
| Drain (D) | High-side power terminal | Connected to exposed copper pad; serves as primary heat sink and high-voltage node in buck/boost/flyback topologies. |
| Source (S) | Reference and return path | Provides ground reference for gate drive and current sensing; low-inductance layout critical for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overloads without derating or external clamping in motor drive H-bridges. |
| Dynamic dV/dt rating | 4.0 V/ns immunity prevents false turn-on in high dv/dt environments like IGBT gate driver circuits. |
| Fast switching (td(on) = 10 ns) | Reduces switching losses in high-frequency SMPS, improving efficiency above 200 kHz. |
| Low Qgd/Qgs ratio (22/5.7 ≈ 3.9) | Improves Miller immunity and enables stable paralleling of multiple devices in high-current modules. |
| RoHS-compliant, lead-free | Meets JEDEC J-STD-020 reflow profile for Pb-free assembly; halogen-free per Vishay specification 99912. |
Applications
| Industrial Motor Drives | AC-DC Power Factor Correction |
|---|---|
|
Use Scenario: Half-bridge switching in 1–3 kW variable-frequency drives for pumps and fans. IC Role / Device Role / Timing Role: High-side N-channel switch in IGBT/MOSFET-based inverter leg, handling 400 V DC bus and 5.5 A RMS phase current. Use Value: Repetitive avalanche rating absorbs regenerative energy during rapid deceleration without failure. |
Use Scenario: Boost switch in active PFC stage for 85–264 VAC input industrial power supplies. IC Role / Device Role / Timing Role: Main switching element operating at 65–100 kHz, conducting peak currents up to 22 A pulsed. Use Value: Low RDS(on) and fast tr/tf reduce conduction and switching losses, achieving >96% PFC efficiency. |
| Offline Flyback Converters | Solenoid & Relay Drivers |
|
Use Scenario: Primary-side switch in universal-input 24–48 V, 50–100 W flyback adapters for industrial sensors. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled high-voltage switch with integrated body diode recovery. Use Value: Body diode trr ≤ 530 ns and Qrr ≤ 2.2 μC minimize voltage overshoot and stress during discontinuous conduction mode. |
Use Scenario: High-side load switch controlling 24–48 V DC solenoids in factory automation I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive load switch with built-in avalanche energy absorption. Use Value: 290 mJ single-pulse avalanche energy eliminates need for external freewheeling diodes or TVS clamps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4.0 A ID, RDS(on) = 1.4 Ω, Zener-protected gate | Higher voltage rating but lower current and higher on-resistance; suited for lower-power 500 V designs | Select when 500 V margin is required and 4 A continuous current suffices; gate protection adds robustness in noisy environments. |
| FQP4N50 | 500 V VDS, 4.0 A ID, RDS(on) = 1.5 Ω, TO-220 package | Through-hole TO-220 vs. surface-mount D2PAK; no avalanche rating specified | Choose for prototyping or low-volume through-hole assembly where PCB space allows; lacks repetitive avalanche capability. |
Compared with STP4NK50ZFP and FQP4N50, the IRF730STRLPBF offers superior current handling (5.5 A vs. 4.0 A), lower RDS(on) (1.0 Ω vs. ≥1.4 Ω), and verified repetitive avalanche performance - making it preferred for production-grade, surface-mount, medium-power industrial switching.
Availability
IRF730STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power factor correction circuits, and offline flyback converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF730STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability across automotive, industrial, and computing markets.
The IRF730STRLPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage switching in demanding industrial power conversion applications where avalanche robustness and surface-mount thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for IRF730STRLPBF at 100 °C case temperature?
The IRF730STRLPBF supports 3.5 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual board layout and ambient conditions. The IRF730STRLPBF maintains RDS(on) stability up to 150 °C junction temperature, ensuring predictable conduction loss in thermally constrained designs.
Does IRF730STRLPBF have a specified avalanche energy rating?
Yes, the IRF730STRLPBF is rated for 290 mJ single-pulse avalanche energy (EAS) and 7.4 mJ repetitive avalanche energy (EAR). These values are measured under defined test conditions (VDD = 50 V, IAS = 5.5 A, L = 16 mH) and confirm its suitability for inductive load switching without external clamping. The IRF730STRLPBF datasheet explicitly states repetitive avalanche capability, distinguishing it from non-rated MOSFETs.
What is the gate threshold voltage range for IRF730STRLPBF?
The IRF730STRLPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity. The IRF730STRLPBF exhibits positive temperature coefficient for VGS(th), supporting current sharing in paralleled configurations without thermal runaway.
Can IRF730STRLPBF be used in place of IRF730PBF?
No - IRF730STRLPBF and IRF730PBF are not interchangeable. The IRF730STRLPBF is a D2PAK (TO-263) surface-mount variant with tape-and-reel packaging and updated third-generation die, whereas IRF730PBF is a legacy TO-220 through-hole part with different thermal and electrical characteristics. The IRF730STRLPBF datasheet does not claim pin compatibility or identical specs with IRF730PBF; substitution requires full circuit validation.
What is the typical body diode reverse recovery time for IRF730STRLPBF?
The IRF730STRLPBF has a typical body diode reverse recovery time (trr) of 270 ns and a maximum of 530 ns at TJ = 25 °C, IF = 3.5 A, and dI/dt = 100 A/μs. This fast recovery minimizes switching losses and voltage spikes in synchronous rectification and bidirectional topologies. The IRF730STRLPBF's Qrr is specified as 1.8–2.2 μC, enabling accurate loss modeling in SPICE simulations.
IRF730STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF730STRLPBF FAQ
1.How can I place an order for IRF730STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF730STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF730STRLPBF reliable?
The price and inventory of IRF730STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF730STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF730STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF730STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF730STRLPBF?
IRF730STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF730STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF730STRLPBF?
For technical support, including IRF730STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF730STRLPBF requirements.
6.How does Aetrix verify that IRF730STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF730STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF730STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF730STRLPBF?
All IRF730STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF730STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF730STRLPBF part is unused and in its original packaging.
Return procedure for IRF730STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF730STRLPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
