Vishay Siliconix IRF730STRRPBF

Overview

IRF730STRRPBF from Vishay Siliconix is a 400 V, 5.5 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 1.0 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC front-end switches, and industrial motor control.

For engineers reviewing the IRF730STRRPBF datasheet, IRF730STRRPBF pinout, IRF730STRRPBF application, or IRF730STRRPBF equivalent, key selection criteria include its 400 V V_DS, 1.0 Ω on-resistance at 10 V drive, 290 mJ single-pulse avalanche energy, thermal resistance of 1.7 °C/W junction-to-case, and compatibility with standard D2PAK PCB footprints and reflow profiles.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for ruggedness and fast switching in high-voltage, moderate-current applications. Its dynamic dV/dt rating of 4.0 V/ns and 90 A/μs diode recovery dI/dt support reliable operation in inductive switching circuits without external snubbers.

The device integrates a low-Q_gd/Q_g ratio (22/38 ≈ 58%) to improve switching efficiency and reduce Miller-induced turn-off delay. Its body diode exhibits 270–530 ns reverse recovery time and 1.8–2.2 μC Q_rr, enabling use in freewheeling and synchronous rectification roles where controlled diode conduction is required.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration (G, D, S), 14.61–15.88 mm height, 8.38–9.65 mm width, 9.65–10.67 mm length; designed for high-power density layouts with direct PCB copper thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP4NK50ZFP and IXTP50N10P, the IRF730STRRPBF uniquely balances 400 V capability, 5.5 A current, 1.0 Ω on-resistance, and D2PAK thermal performance-making it optimal for compact, surface-mounted high-voltage switchers where layout density and thermal management are prioritized over extreme voltage margin or ultra-low R_DS(on).

Availability

IRF730STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, and DC-DC boost converters requiring stable component supply, RoHS-compliant lead-free assembly, and long-term production continuity.

Supply support for IRF730STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF730STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching in demanding off-line and motor-control applications with emphasis on avalanche robustness and surface-mount thermal efficiency.

FAQ

What is the maximum continuous drain current for IRF730STRRPBF at 100 °C case temperature?

The IRF730STRRPBF supports 3.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 1.7 °C/W junction-to-case thermal resistance. Designers must verify PCB copper area and ambient conditions to maintain this rating in actual layouts.

Does IRF730STRRPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF730STRRPBF integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 5.5 A continuous source-drain current, 22 A pulsed rating, 1.6 V forward voltage at 5.5 A and 25 °C, and 270–530 ns reverse recovery time with 1.8–2.2 μC recovered charge-critical for evaluating freewheeling losses in hard-switched topologies.

Is IRF730STRRPBF RoHS-compliant and halogen-free?

Yes, IRF730STRRPBF is RoHS-compliant and halogen-free, as confirmed by Vishay's ordering information and material categorization note in document 91048. The "-GE3" suffix variants (e.g., SiHF730STRR-GE3) explicitly denote lead-free and halogen-free construction, and IRF730STRRPBF follows the same environmental specification per Vishay's compliance documentation.

What is the gate threshold voltage range for IRF730STRRPBF, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRF730STRRPBF is 2.0–4.0 V at I_D = 250 μA, confirming enhancement-mode operation with sufficient margin above 1.8 V logic levels. This allows reliable turn-on with standard 5 V or 10 V gate drivers while avoiding unintended conduction from noise-no level-shifting is needed for typical PWM controller interfaces.

Can IRF730STRRPBF be paralleled with identical units, and what design considerations apply?

Yes, IRF730STRRPBF is designed for ease of paralleling, as noted in its features list. Key considerations include matched gate drive impedance (<12 Ω recommended), symmetrical PCB layout to minimize loop inductance, and thermal coupling via shared copper pour. Its positive R_DS(on) temperature coefficient ensures current sharing stability across temperature gradients.