Vishay Siliconix IRF734
- Part No.:
- IRF734
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF734.pdf
- Description:
- MOSFET N-CH 450V 4.9A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,138
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF734 from Vishay Siliconix is a 450 V, 4.9 A N-channel power MOSFET in TO-220 package, featuring 1.2 Ω RDS(on) at VGS = 10 V, 45 nC total gate charge, and repetitive avalanche rating up to 4.9 A - designed for hard-switched industrial power supplies and motor control circuits requiring ruggedness and fast switching.
For engineers reviewing the IRF734 datasheet, IRF734 pinout, IRF734 application, or IRF734 equivalent, key selection criteria include its 450 V blocking voltage, 74 W power dissipation at TC = 25 °C, 460–690 ns body diode reverse recovery time, and TO-220 thermal interface compatibility with standard heatsinks.
Technical Context
The IRF734 employs a third-generation planar vertical DMOS structure optimized for high-voltage switching with low gate charge (Qg = 45 nC) and controlled dV/dt capability (4.0 V/ns). Its 1.2 Ω on-resistance at 10 V gate drive enables efficient conduction in 300–400 V DC bus applications.
It supports unclamped inductive switching with single-pulse avalanche energy of 330 mJ and repetitive avalanche current of 4.9 A, while its body diode exhibits 2.0 V forward drop at 4.9 A and 460–690 ns reverse recovery time - critical for snubberless flyback and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 450 V - supports 380 V AC rectified rails with 20 % margin for surge and ripple |
| RDS(on) | 1.2 Ω @ VGS = 10 V - delivers ≤7.2 W conduction loss at 4.9 A continuous drain current |
| Qg | 45 nC - determines gate driver power requirement and switching speed in hard-switched converters |
| ID (TC = 25 °C) | 4.9 A - defines maximum continuous current with heatsink at ambient-referenced case temperature |
| EAS | 330 mJ - enables reliable operation under unclamped inductive turn-off without external snubber |
| trr / Qrr | 460–690 ns / 1.8–2.7 µC - impacts switching losses and EMI in freewheeling paths with body diode conduction |
Pinout & Package
TO-220 package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.7 °C/W junction-to-case thermal resistance, and 0.50 °C/W case-to-sink thermal resistance on greased flat surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 6.6 nC gate-source charge enables fast turn-on with low driver stress |
| D (Drain) | High-side switch node | Connected to TO-220 metal tab; electrically tied to drain for direct heatsinking and high-current return path |
| S (Source) | Power reference node | Common return for load current and gate drive reference; internal source inductance of 7.5 nH affects switching waveform fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.0 V/ns - suppresses false turn-on during high dv/dt transients in bridge-leg configurations |
| Repetitive avalanche rated | 4.9 A IAR, 7.4 mJ EAR - sustains repeated inductive energy dump without degradation in motor drive fault conditions |
| Fast switching | td(on) = 5.9 ns, tr = 22 ns, td(off) = 40 ns, tf = 21 ns - reduces transition losses in 50–100 kHz SMPS designs |
| Ease of paralleling | Positive RDS(on) temperature coefficient - ensures current sharing stability across multiple IRF734 devices in parallel arrays |
| Simple drive requirements | VGS(th) = 2.0–4.0 V - compatible with standard 10 V gate drivers without level-shifting circuitry |
Applications
| Industrial Switch-Mode Power Supply | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Primary-side switch in 300–400 V DC input offline flyback or forward converter operating at 60–100 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 450 V VDS and 330 mJ EAS eliminate need for clamping networks during no-load or overload transients. |
Use Scenario: Upper-leg switch in 3-phase inverter driving 1–2 kW induction motors with regenerative braking. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in complementary pair with synchronous body-diode commutation. Use Value: 460–690 ns trr and 2.0 V VSD minimize freewheeling losses and reduce shoot-through risk during dead-time transitions. |
| DC-DC Boost Converter | AC Motor Starter |
Use Scenario: Boost switch in industrial 24/48 V DC input to 400 V DC output PFC stage. IC Role / Device Role / Timing Role: Main energy storage switch cycling at fixed frequency with variable duty cycle. Use Value: 1.2 Ω RDS(on) limits conduction loss to <1.5 W at 3.5 A average current, supporting >95 % efficiency targets. |
Use Scenario: Solid-state contactor replacing electromechanical relay in HVAC compressor start circuits. IC Role / Device Role / Timing Role: Inrush current limiter and steady-state power switch handling 10× motor locked-rotor current. Use Value: Repetitive avalanche rating (4.9 A IAR) withstands repeated starting surges without derating or external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4.0 A ID, 1.5 Ω RDS(on), 35 nC Qg, TO-220FP package (full-pack) | Lower RDS(on) not offset by higher VDS rating; reduced thermal mass due to FP variant | Prefer when lower gate charge dominates over thermal performance; verify heatsink interface for FP package |
| IXTP4N50D2 | 500 V VDS, 4.0 A ID, 1.4 Ω RDS(on), 32 nC Qg, TO-220 package with enhanced dV/dt immunity | Higher dV/dt rating (6.0 V/ns); lower Qg improves high-frequency efficiency but reduces avalanche margin | Choose for >150 kHz resonant converters where switching loss outweighs avalanche robustness |
Compared with STP4NK50ZFP and IXTP4N50D2, the IRF734 offers superior avalanche energy handling (330 mJ vs. ≤200 mJ) and higher continuous current (4.9 A vs. 4.0 A), making it preferred for industrial motor drives and unclamped inductive loads where reliability under fault conditions is critical.
Availability
IRF734 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, motor drive half-bridges, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF734 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF734 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in hard-switched topologies where avalanche capability, thermal robustness, and consistent parametric performance are essential.
FAQ
What is the maximum continuous drain current for the IRF734 at 100 °C case temperature?
The IRF734 supports 3.1 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and must be applied when heatsink design restricts case temperature rise. The IRF734 maintains safe operation within its SOA curve up to this current level under steady-state conditions.
Does the IRF734 have a lead-free finish, and what is its RoHS status?
Yes, the IRF734PbF variant is explicitly designated as lead-free and RoHS compliant per the ordering information and product summary in the Vishay datasheet (Document Number: 91049). The "PbF" suffix confirms compliance with EU RoHS Directive 2011/65/EU and related restrictions on hazardous substances.
Can the IRF734 be used in avalanche mode repeatedly, and what are the limits?
Yes, the IRF734 is rated for repetitive avalanche operation with IAR = 4.9 A and EAR = 7.4 mJ per pulse, provided pulse width and duty cycle remain within thermal limits defined in Figure 11. The IRF734 achieves this via controlled silicon design and is validated for such use in motor drive fault conditions without parameter shift.
What is the typical body diode reverse recovery time (trr) of the IRF734, and how does it affect circuit design?
The IRF734 exhibits a typical body diode reverse recovery time of 460–690 ns at TJ = 25 °C, IF = 4.9 A, and dI/dt = 100 A/µs. This value directly impacts switching loss and EMI in topologies relying on body diode conduction, such as non-synchronous buck or half-bridge freewheeling - requiring careful dead-time optimization in the IRF734-based design.
Is the IRF734 pin-compatible with other TO-220 N-channel MOSFETs like the IRF840?
No, the IRF734 is not pin-compatible with the IRF840 despite sharing the TO-220 package - their electrical characteristics differ significantly (e.g., IRF840 has 500 V VDS, 8 A ID, 0.85 Ω RDS(on)). Substitution requires full revalidation of gate drive, thermal, and SOA margins. The IRF734 must be evaluated independently for each target application.
IRF734 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 450 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF734 FAQ
1.How can I place an order for IRF734 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF734 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF734 reliable?
The price and inventory of IRF734 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF734 is usually 5 days.
3.What payment methods are accepted for IRF734?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF734 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF734?
IRF734 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF734 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF734?
For technical support, including IRF734 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF734 requirements.
6.How does Aetrix verify that IRF734 is sourced from the original manufacturer or authorized distributors?
All IRF734 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF734 meets industry standards.
7.What is the process for return or replacement of IRF734?
All IRF734 units undergo pre-shipment inspection (PSI). If there is an issue with IRF734, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF734 part is unused and in its original packaging.
Return procedure for IRF734:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF734 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
