Vishay Siliconix IRF737LC
- Part No.:
- IRF737LC
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF737LC.pdf
- Description:
- MOSFET N-CH 300V 6.1A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,730
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Product details
Overview
IRF737LC from Vishay Siliconix is a 300 V, 6.1 A N-channel power MOSFET in TO-220 package, featuring 0.75 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and repetitive avalanche rating. It serves as a high-frequency switching transistor in DC-DC converters and motor control circuits where reduced switching loss and rugged unclamped inductive switching are required.
For engineers reviewing the IRF737LC datasheet, IRF737LC pinout, IRF737LC application, or IRF737LC equivalent, key selection criteria include its 300 V VDS, 6.1 A continuous drain current at TC = 25 °C, 1.7 °C/W junction-to-case thermal resistance, 3.4 V/ns peak diode recovery dV/dt capability, and RoHS-compliant lead-free variant IRF737LCPbF.
Technical Context
The IRF737LC employs Vishay's LCDMOS technology to achieve low gate charge (Qg = 17 nC max) and reduced capacitances (Ciss = 430 pF typ, Coss = 120 pF typ), enabling MHz-range switching at high current. Its ±30 V gate-source voltage rating and 2.0–4.0 V threshold support robust drive margin in industrial gate driver designs.
Rated for repetitive avalanche (EAR = 7.4 mJ, IAR = 6.1 A), the device sustains unclamped inductive turn-off stress without external snubbing in flyback or relay drivers. The integral body diode exhibits trr = 320–490 ns and Qrr = 1.5–2.2 µC, suitable for synchronous rectification in medium-frequency topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 300 V - Supports 240 V DC bus applications with 25 % safety margin |
| RDS(on) @ VGS = 10 V | 0.75 Ω max - Limits conduction loss to ≤27.7 W at 6.1 A |
| Qg | 17 nC max - Reduces gate driver power requirement and enables <5 MHz operation |
| ID Continuous @ TC = 25 °C | 6.1 A - Delivers rated output in heatsinked TO-220 mounting |
| EAS | 120 mJ - Withstands single-pulse inductive energy without failure |
| dV/dt (diode recovery) | 3.4 V/ns - Resists false turn-on during fast commutation in half-bridge layouts |
| TJ Range | –55 to +150 °C - Qualified for industrial and automotive under-hood ambient conditions |
Pinout & Package
IRF737LC uses a standard TO-220AB package with isolated tab (drain-connected). Mounting screw torque: 10 lbf·in (1.1 N·m); soldering peak temperature: 300 °C for 10 s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 0–10 V logic-level or 10–30 V enhanced drive; 100 nA leakage at ±20 V ensures low standby current |
| D (Drain) | High-side power switch node | Internally connected to metal tab; requires electrical isolation when mounted to heatsink |
| S (Source) | Power return reference | Common return for gate drive and load current; internal source inductance = 7.5 nH affects high-dI/dt ringing |
Key Features
| Feature | Design Value |
|---|---|
| Reduced gate charge | Qg = 17 nC max enables lower gate driver IC power dissipation and faster switching transitions |
| Enhanced VGS rating | ±30 V allows direct interface with 24 V gate drivers without level-shifting or clamping components |
| Repetitive avalanche rated | EAR = 7.4 mJ supports reliable operation in inductive load switching without snubber networks |
| Low Ciss/Coss/Crss | 430/120/9.2 pF typical reduces Miller effect and improves EMI performance in hard-switched SMPS |
| Lead (Pb)-free option | IRF737LCPbF variant meets RoHS Directive 2011/65/EU without compromising thermal or electrical specs |
Applications
| DC-DC Converter Primary Switch | Industrial Motor Driver Half-Bridge |
|---|---|
Use Scenario: High-efficiency 24–48 V input buck converter operating at 300–500 kHz in telecom power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated by PWM controller. Use Value: Low Qg and RDS(on) reduce combined conduction and switching losses, improving full-load efficiency by ≥1.2 % vs. legacy MOSFETs. |
Use Scenario: 3-phase BLDC motor driver stage handling 5–10 A phase current in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: Upper-leg N-channel switch in half-bridge configuration; driven by isolated gate driver with bootstrap supply. Use Value: 300 V VDS withstands back-EMF spikes up to 280 V; 3.4 V/ns dV/dt rating prevents spurious turn-on during shoot-through events. |
| Uninterruptible Power Supply (UPS) Inverter | Relay/Solenoid Driver |
Use Scenario: 1 kVA line-interactive UPS inverter stage converting 360 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; synchronized with complementary low-side devices using dead-time control. Use Value: Repetitive avalanche rating (IAR = 6.1 A) absorbs inductive kickback during zero-crossing transitions without external protection. |
Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoids in factory automation I/O modules. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch; controlled via microcontroller GPIO with RC gate filter. Use Value: 6.1 A continuous current supports 5× solenoid inrush rating; TO-220 package enables direct PCB heatsinking for 100 % duty-cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK30ZFP | 300 V, 2.5 A, RDS(on) = 1.4 Ω, Qg = 6.5 nC, TO-220FP (full-pack) | Lower current rating limits use to ≤3 A loads; smaller gate charge favors ultra-high-frequency ZVS designs | Select when board space is constrained and peak current ≤2.5 A; verify thermal derating at TC > 75 °C |
| IXTP30N30P | 300 V, 30 A, RDS(on) = 0.12 Ω, Qg = 60 nC, TO-220 | Higher current and lower RDS(on) increase conduction efficiency but require stronger gate drive due to 3.5× Qg | Choose for high-current inverters (>15 A) where gate driver can deliver ≥2 A peak; not drop-in due to layout rework for higher current traces |
Compared with STP3NK30ZFP and IXTP30N30P, the IRF737LC delivers balanced performance for 6 A-class switching applications-offering higher current than STP3NK30ZFP without the gate drive burden of IXTP30N30P-making it optimal for cost-sensitive industrial power stages requiring ruggedness and proven reliability.
Availability
IRF737LC is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF737LC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and application-specific optimization.
The IRF737LC belongs to Vishay's LCDMOS low-charge power MOSFET family, designed specifically for high-frequency switching power conversion where reduced gate charge and avalanche robustness improve system efficiency and reliability.
FAQ
What is the maximum continuous drain current for IRF737LC at 100 °C case temperature?
The IRF737LC supports 3.9 A continuous drain current at TC = 100 °C, per Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and must be verified against actual heatsink performance and ambient conditions in the target design. The IRF737LC datasheet specifies linear derating beyond 25 °C at 0.59 W/°C.
Does IRF737LC have a built-in body diode, and what are its key parameters?
Yes, the IRF737LC integrates a fast-recovery body diode rated for 6.1 A continuous source-drain current. Key parameters include VSD = 1.6 V max at IS = 6.1 A and TJ = 25 °C, reverse recovery time trr = 320–490 ns, and Qrr = 1.5–2.2 µC. These values are measured under standardized conditions defined in the IRF737LC datasheet.
Is IRF737LC suitable for avalanche-mode operation, and what energy levels are specified?
Yes, the IRF737LC is explicitly rated for repetitive avalanche operation with EAR = 7.4 mJ and IAR = 6.1 A. It also supports single-pulse avalanche energy EAS = 120 mJ. These ratings are validated per test conditions in the IRF737LC datasheet (Fig. 12a/b), requiring proper gate bias and thermal management during stress events.
What is the gate threshold voltage range for IRF737LC, and how does it affect drive requirements?
The IRF737LC has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while maintaining noise immunity. Drive circuits must supply ≥10 V to achieve full RDS(on) specification of 0.75 Ω, as confirmed in the IRF737LC static characteristics tables.
How does the IRF737LC differ from the lead-free variant IRF737LCPbF?
The IRF737LC (SnPb termination) and IRF737LCPbF (lead-free) share identical electrical, thermal, and mechanical specifications per Vishay documentation. The only difference is termination composition: IRF737LCPbF complies with RoHS Directive 2011/65/EU, while IRF737LC contains lead and is exempted under certain categories. Both variants use the same TO-220 package and are functionally interchangeable in design.
IRF737LC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 430 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF737LC FAQ
1.How can I place an order for IRF737LC through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF737LC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF737LC reliable?
The price and inventory of IRF737LC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF737LC is usually 5 days.
3.What payment methods are accepted for IRF737LC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF737LC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF737LC?
IRF737LC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF737LC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF737LC?
For technical support, including IRF737LC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF737LC requirements.
6.How does Aetrix verify that IRF737LC is sourced from the original manufacturer or authorized distributors?
All IRF737LC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF737LC meets industry standards.
7.What is the process for return or replacement of IRF737LC?
All IRF737LC units undergo pre-shipment inspection (PSI). If there is an issue with IRF737LC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF737LC part is unused and in its original packaging.
Return procedure for IRF737LC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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