Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740

Name: IRF740
Brand: Vishay Siliconix
SKU: IRF740
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF740

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF740.pdf

Description:: MOSFET N-CH 400V 10A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,826

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF740 from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for hard-switched SMPS, motor drives, and DC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the IRF740 datasheet, IRF740 pinout, IRF740 application, or IRF740 equivalent, key selection criteria include its 400 V V_DS, 125 W P_D at T_C = 25 °C, 520 mJ single-pulse avalanche energy, and TO-220AB thermal resistance of 1.0 °C/W (junction-to-case), critical for high-reliability industrial power stages.

Technical Context

The IRF740 uses third-generation planar vertical DMOS technology optimized for ruggedness and fast switching in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V gate drive compatibility, while dynamic dV/dt rating (4.0 V/ns) supports stable operation under high dv/dt transients in inductive loads.

It integrates a fast-recovery body diode with t_rr = 370–790 ns and Q_rr = 3.8–8.2 μC, enabling moderate-frequency freewheeling in flyback and forward converters. The device's low C_iss (1400 pF typ.) and C_oss (330 pF typ.) support efficient gate driving with minimal Miller effect.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in offline 230 VAC SMPS with ≥100% safety margin
R_DS(on) max	0.55 Ω at V_GS = 10 V - limits conduction loss to ≤33 W at 10 A continuous drain current
Q_g max	63 nC - determines gate driver peak current requirement (~1.3 A for 50 ns rise time)
E_AS	520 mJ - enables unclamped inductive switching without failure in motor control H-bridge snubbers
T_J range	−55 to +150 °C - qualifies for industrial ambient environments with forced-air or heatsink cooling
dV/dt rating	4.0 V/ns - ensures immunity to parasitic turn-on during high-speed switching in high-di/dt circuits
P_D	125 W at T_C = 25 °C - requires ≤1.0 °C/W heatsink thermal resistance for full-power operation

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 1.0 °C/W junction-to-case thermal resistance, and 62 °C/W junction-to-ambient (no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 9.0 nC Q_gs defines Miller plateau duration
D (Drain)	High-side power output	Connected to TO-220 tab; electrically isolated but thermally coupled to heatsink
S (Source)	Power return reference	Common node for gate drive return and current sensing; 7.5 nH internal source inductance affects switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	10 A I_AR, 13 mJ E_AR - enables reliable operation under short-circuit or overload conditions without derating
Dynamic dV/dt rating	4.0 V/ns - prevents false triggering during rapid voltage transients across drain-source
Fast switching	t_d(on) = 14 ns, t_f = 24 ns - reduces switching losses in 50–100 kHz SMPS designs
Low R_DS(on) × Q_g figure-of-merit	0.55 Ω × 63 nC = 34.7 Ω·nC - balances conduction and switching loss trade-off for medium-frequency power stages
RoHS-compliant Pb-free variant	IRF740PbF-BE3 - halogen-free, lead-free termination per JEDEC J-STD-609A Class 1

Applications

Switch-Mode Power Supply	Motor Drive Inverter
Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter. IC Role / Device Role / Timing Role: High-voltage power switch controlled by UC384x or similar PWM controller. Use Value: 400 V V_DS and 520 mJ E_AS ensure robustness against reflected voltage spikes and transformer leakage energy.	Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC blowers or industrial pumps. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled phase leg switch. Use Value: 10 A continuous ID and 150 °C T_J rating support sustained 20–50 kHz PWM operation with thermal margin.
DC-DC Converter	Uninterruptible Power Supply
Use Scenario: Step-down (buck) switch in 48 V input telecom or server power module. IC Role / Device Role / Timing Role: Main power FET driven by dedicated gate driver IC (e.g., UCC27531). Use Value: 0.55 Ω R_DS(on) minimizes conduction loss at 10 A load, improving efficiency above 92%.	Use Scenario: Battery charger/backup inverter stage in line-interactive UPS systems. IC Role / Device Role / Timing Role: Bidirectional switch in half-bridge topology managing AC/DC and DC/AC conversion. Use Value: Repetitive avalanche capability (10 A I_AR) handles battery surge currents and inductive kickback during transfer switching.

Switch-Mode Power Supply

Motor Drive Inverter

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by UC384x or similar PWM controller.

Use Value: 400 V V_DS and 520 mJ E_AS ensure robustness against reflected voltage spikes and transformer leakage energy.

Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC blowers or industrial pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled phase leg switch.

Use Value: 10 A continuous ID and 150 °C T_J rating support sustained 20–50 kHz PWM operation with thermal margin.

DC-DC Converter

Uninterruptible Power Supply

Use Scenario: Step-down (buck) switch in 48 V input telecom or server power module.

IC Role / Device Role / Timing Role: Main power FET driven by dedicated gate driver IC (e.g., UCC27531).

Use Value: 0.55 Ω R_DS(on) minimizes conduction loss at 10 A load, improving efficiency above 92%.

Use Scenario: Battery charger/backup inverter stage in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Bidirectional switch in half-bridge topology managing AC/DC and DC/AC conversion.

Use Value: Repetitive avalanche capability (10 A I_AR) handles battery surge currents and inductive kickback during transfer switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4 A I_D, 1.5 Ω R_DS(on), TO-220FP package (full-pack)	Lower current rating and higher on-resistance; suited for lower-power (<60 W) ZVS flyback	Select when higher voltage margin (500 V) is prioritized over current handling and thermal performance
FQP4N40	400 V V_DS, 4.3 A I_D, 1.3 Ω R_DS(on), TO-220 package, no avalanche rating	Lacks repetitive avalanche specification; not recommended for inductive switching without external clamping	Choose only for resistive or lightly inductive loads where cost is critical and avalanche stress is absent

Compared with STP4NK50ZFP and FQP4N40, the IRF740 delivers higher current capability (10 A vs. ≤4.3 A), lower R_DS(on) (0.55 Ω vs. ≥1.3 Ω), and verified repetitive avalanche performance-making it the preferred choice for industrial-grade 100–300 W power stages requiring reliability under transient overload.

Availability

IRF740 is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive inverters, and uninterruptible power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRF740 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and industrial reliability.

The IRF740 belongs to Vishay's third-generation power MOSFET family engineered for high-voltage, medium-current switching in commercial and industrial power conversion-balancing low R_DS(on), fast switching, and avalanche survivability.

FAQ

What is the maximum continuous drain current for the IRF740 at 100 °C case temperature?

The IRF740 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure safe operation below 150 °C.

Does the IRF740 have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRF740 integrates a monolithic body diode with t_rr = 370–790 ns and Q_rr = 3.8–8.2 μC at T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs. This diode supports freewheeling in flyback and synchronous rectification topologies but is not optimized for high-frequency ZVS; external Schottky diodes may be preferred above 200 kHz.

Is the IRF740PbF-BE3 variant RoHS-compliant and halogen-free?

Yes, the IRF740PbF-BE3 is both RoHS-compliant and halogen-free, meeting JEDEC J-STD-609A Class 1 requirements. It replaces legacy leaded versions without requiring PCB rework, and its termination composition is fully documented in Vishay's material declaration (Doc. #99912). No exemptions apply.

What is the gate threshold voltage range for the IRF740, and how does it affect drive circuit design?

IRF740 has a V_GS(th) range of 2.0–4.0 V at I_D = 250 μA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process variation. Driving at 5 V risks partial turn-on and excessive conduction loss; therefore, logic-level gate drivers are unsuitable unless verified for worst-case V_GS(th).

Can the IRF740 be used in parallel configurations, and what design considerations apply?

Yes, the IRF740 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Key practices include matched gate resistors (≤10 Ω), symmetrical layout with minimized loop inductance, and individual gate drive routing. Thermal coupling via shared heatsink further improves balance under steady-state load.

IRF740 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF740 FAQ

1.How can I place an order for IRF740 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740 reliable?

The price and inventory of IRF740 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740 is usually 5 days.

3.What payment methods are accepted for IRF740?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740?

IRF740 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740?

For technical support, including IRF740 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740 requirements.

6.How does Aetrix verify that IRF740 is sourced from the original manufacturer or authorized distributors?

All IRF740 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740 meets industry standards.

7.What is the process for return or replacement of IRF740?

All IRF740 units undergo pre-shipment inspection (PSI). If there is an issue with IRF740, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740 part is unused and in its original packaging.

Return procedure for IRF740:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …