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Vishay Siliconix IRF740AL
- Part No.:
- IRF740AL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF740AL.pdf
- Description:
- MOSFET N-CH 400V 10A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,882
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Product details
Overview
IRF740AL from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 36 nC total gate charge, and 630 mJ single-pulse avalanche energy-designed for high-voltage switching in flyback and forward SMPS topologies with US-line input.
For engineers reviewing the IRF740AL datasheet, IRF740AL pinout, IRF740AL application, or IRF740AL equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics, and direct alternative part comparisons for reliable high-voltage power stage design.
Technical Context
The IRF740AL employs a planar vertical DMOS structure optimized for ruggedness in unclamped inductive switching, with fully characterized Ciss (1030 pF), Coss (170 pF), and Crss (7.7 pF) at VDS = 25 V, enabling accurate snubber and gate drive loss calculation.
It supports repetitive avalanche operation up to 12.5 mJ and features dV/dt immunity of 5.9 V/ns, validated under conditions matching IAS = 10 A, L = 12.6 mH, and Rg = 25 Ω-critical for transformer reset reliability in single-transistor topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Withstands full US-line rectified input (≈375 V DC) with margin for surge and ringing. |
| RDS(on) | 0.55 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 6.3 A continuous drain current (TC = 100 °C). |
| Qg | 36 nC - Determines gate driver current requirement (~3.6 mA average for 100 kHz switching with 10 V swing). |
| EAS | 630 mJ - Supports robust unclamped inductive switching without external clamping in flyback/forward reset phases. |
| tr/tf | 35 ns / 22 ns - Enables fast turn-on/turn-off for high-frequency SMPS operation while limiting EMI generation. |
| VSD | 2.0 V @ IS = 10 A - Defines forward voltage drop of integral body diode during synchronous or freewheeling conduction. |
| trr | 240–360 ns - Quantifies reverse recovery time impacting switching losses and cross-conduction risk in half-bridge configurations. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal dissipation; thermally optimized for PCB mounting on 1" FR-4 square pad (RthJA = 40 °C/W, RthJC = 1.0 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers. |
| D (Drain) | High-side power output | Connected to primary winding and HV bus; electrically tied to exposed thermal pad for low-inductance, low-resistance heat path. |
| S (Source) | Power return/reference | Serves as local ground reference for gate drive and current sensing; ties to source node of control IC for stable feedback loop. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (36 nC) | Reduces gate driver power consumption and simplifies drive circuitry-no need for high-current buffer stages in 100–500 kHz SMPS. |
| Full avalanche rating (EAS = 630 mJ) | Eliminates need for external RCD clamp in single-transistor flyback/forward designs, lowering BOM count and layout complexity. |
| Characterized Coss eff. (61 pF) | Enables precise calculation of turn-off energy loss (Eoff ≈ ½ × Coss eff. × VDS²) for efficiency optimization. |
| Body diode trr = 240–360 ns | Supports reliable freewheeling in discontinuous conduction mode (DCM) flyback without excessive diode recovery loss or voltage overshoot. |
| Peak dV/dt immunity (5.9 V/ns) | Prevents false turn-on during high dv/dt transients across drain-source-critical for stable operation in noisy high-voltage environments. |
Applications
| AC-DC Flyback Converter | UPS Inverter Stage |
|---|---|
Use Scenario: Primary-side switch in universal-input (85–265 V AC) offline flyback converter delivering 12–24 V DC output. IC Role / Device Role / Timing Role: High-voltage power switch performing transformer reset via single-transistor topology with self-clamped avalanche. Use Value: 400 V VDS and 630 mJ EAS allow safe operation without external snubber under worst-case line and load transients. |
Use Scenario: DC-AC inverter bridge leg in line-interactive UPS handling 350–400 V DC bus and delivering 120/230 V AC output. IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration managing bidirectional power flow and battery charging. Use Value: 5.9 V/ns dV/dt rating and 240–360 ns trr ensure reliable commutation without shoot-through during dead-time transitions. |
| Industrial SMPS Power Supply | LED Driver with High-Voltage Input |
Use Scenario: 100–200 W industrial power supply using forward converter topology with US-line input (100–120 V AC). IC Role / Device Role / Timing Role: Main switching transistor controlling transformer primary excitation and reset through auxiliary winding. Use Value: 0.55 Ω RDS(on) and 125 W PD (TC = 25 °C) support high-efficiency operation at full load with minimal heatsink requirement. |
Use Scenario: Constant-current LED driver for street lighting operating directly from 277 V AC line (rectified ~390 V DC). IC Role / Device Role / Timing Role: Primary-side switch in buck-derived or flyback-based topology regulating LED string current. Use Value: 400 V VDS provides 10 % margin over peak rectified voltage, ensuring long-term reliability under overvoltage conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF740ASPbF | Same die, identical RDS(on), Qg, and avalanche ratings-but packaged in leaded D2PAK (TO-263) instead of lead-free/halogen-free variant. | No change in circuit function or layout; differs only in RoHS compliance status and termination finish. | Select IRF740ASPbF only if legacy Pb-based assembly process is required; IRF740AL is preferred for modern RoHS-compliant production. |
| STP4NK50ZFP | Zener-protected superjunction MOSFET with 500 V VDS, 3.5 Ω RDS(on), lower Qg (12 nC), but significantly higher on-resistance and different SO-8FP package. | Not pin-compatible; requires PCB redesign; better suited for lower-current, higher-frequency applications where gate drive simplicity outweighs conduction loss. | Choose STP4NK50ZFP only when prioritizing ultra-low Qg and integrated Zener protection over conduction efficiency and thermal performance. |
Compared with IRF740AL, IRF740ASPbF offers identical electrical behavior but lacks halogen-free compliance, while STP4NK50ZFP trades higher RDS(on) and non-compatible packaging for lower gate charge and built-in avalanche protection-making IRF740AL optimal for cost-sensitive, thermally demanding 10 A SMPS designs.
Availability
IRF740AL is available at Aetrix Electronics and suitable for switch-mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for IRF740AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and parametric consistency.
The IRF740AL belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for transformer-reset SMPS topologies in industrial and telecom power systems where avalanche capability and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRF740AL at 100 °C case temperature?
The IRF740AL supports 6.3 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures junction temperature remains ≤150 °C under steady-state conduction. The IRF740AL must be mounted on an adequately sized copper area to maintain this rating.
Does IRF740AL have a built-in body diode, and what are its key parameters?
Yes, the IRF740AL integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 10 A continuous source-drain current (IS), 40 A pulsed rating (ISM), 2.0 V forward voltage (VSD) at 10 A and 25 °C, and reverse recovery time (trr) of 240–360 ns-critical for evaluating freewheeling losses in flyback converters.
Is IRF740AL pin-compatible with IRF740ASPbF?
Yes, IRF740AL and IRF740ASPbF share identical D2PAK (TO-263) package outline, pin assignment (G-D-S), and mechanical dimensions-including thermal pad layout and solder footprint. The only differences are RoHS compliance (IRF740AL is lead-free/halogen-free; IRF740ASPbF contains lead) and associated material declarations-not electrical or mechanical compatibility.
What is the gate threshold voltage range for IRF740AL, and how does it affect drive requirements?
The IRF740AL has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This allows reliable turn-on with standard 5 V or 10 V gate drivers, but full enhancement (to achieve rated RDS(on)) requires VGS ≥ 10 V. Driving below 8 V risks incomplete saturation and elevated conduction losses in the IRF740AL.
Can IRF740AL be used in hard-switched half-bridge configurations?
Yes, the IRF740AL is suitable for hard-switched half-bridge use due to its 5.9 V/ns peak dV/dt immunity and fully characterized reverse recovery (trr = 240–360 ns, Qrr = 1.9–2.9 μC). However, careful dead-time selection and gate drive strength are required to avoid shoot-through; its 36 nC Qg demands ≥1 A peak gate current for sub-50 ns transition times in the IRF740AL.
IRF740AL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF740AL FAQ
1.How can I place an order for IRF740AL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF740AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF740AL reliable?
The price and inventory of IRF740AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740AL is usually 5 days.
3.What payment methods are accepted for IRF740AL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740AL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF740AL?
IRF740AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF740AL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF740AL?
For technical support, including IRF740AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740AL requirements.
6.How does Aetrix verify that IRF740AL is sourced from the original manufacturer or authorized distributors?
All IRF740AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740AL meets industry standards.
7.What is the process for return or replacement of IRF740AL?
All IRF740AL units undergo pre-shipment inspection (PSI). If there is an issue with IRF740AL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF740AL part is unused and in its original packaging.
Return procedure for IRF740AL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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