Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740APBF-BE3

Name: IRF740APBF-BE3
Brand: Vishay Siliconix
SKU: IRF740APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF740APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF740APBF-BE3.pdf

Description:: MOSFET N-CH 400V 10A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,619

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF740APBF-BE3 from Vishay Siliconix is a 400 V, 10 A, N-channel power MOSFET in TO-220AB package with R_DS(on) = 0.55 Ω at V_GS = 10 V, Q_g = 36 nC, and rated for repetitive avalanche energy of 12.5 mJ - used in flyback and forward SMPS topologies with transformer reset.

For engineers reviewing the IRF740APBF-BE3 datasheet, IRF740APBF-BE3 pinout, IRF740APBF-BE3 application, or IRF740APBF-BE3 equivalent, key selection criteria include its 400 V V_DS, low gate charge for simplified drive, avalanche ruggedness, and TO-220AB thermal performance (R_thJC = 1.0 °C/W).

Technical Context

This device implements a planar vertical DMOS structure optimized for high-voltage switching with fully characterized C_iss (1030 pF), C_oss (170 pF), and C_rss (7.7 pF) at V_DS = 25 V, enabling accurate snubber and gate drive design. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The integral body diode supports unclamped inductive switching with t_rr = 240–360 ns and Q_rr = 1.9–2.9 μC at I_F = 10 A, dI/dt = 100 A/μs. Avalanche capability is validated per JEDEC JESD24-11 with E_AS = 630 mJ (single-pulse) and I_AR = 10 A (repetitive).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in universal-input SMPS up to 320 V DC bus.
R_DS(on)	0.55 Ω @ V_GS = 10 V - limits conduction loss to ≤ 33 W at 10 A continuous drain current.
Q_g	36 nC - enables fast switching with moderate gate driver strength (e.g., TC4420 or similar).
E_AS	630 mJ - withstands single-pulse inductive energy without failure in transformer-reset circuits.
t_r/t_f	35 ns / 22 ns - supports >100 kHz switching in hard-switched topologies with low switching loss.
T_J Range	–55 to +150 °C - qualified for industrial ambient environments with derated ID above 100 °C.

Pinout & Package

IRF740APBF-BE3 uses the industry-standard TO-220AB package (10.16 mm × 19.05 mm × 4.83 mm), with drain connected to the metal tab for direct heatsinking and thermal resistance R_thJC = 1.0 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires < ±30 V rating and low-impedance drive due to 36 nC Q_g.
D (Drain)	High-side power output	Connected to transformer primary or DC bus; electrically tied to metal tab for thermal path and must be isolated from heatsink unless using insulating pad.
S (Source)	Power return/reference node	Serves as common reference for gate drive and current sensing; carries full load current and body diode reverse recovery charge (Q_rr = 1.9–2.9 μC).

Key Features

Feature	Design Value
Low Q_g (36 nC)	Reduces gate drive power and simplifies driver selection - compatible with low-cost bipolar or CMOS gate drivers.
Fully characterized C_oss	Enables precise snubber design and soft-switching analysis; effective C_oss = 61 pF across 0–320 V.
Avalanche-rated (E_AS = 630 mJ)	Eliminates need for external clamping in transformer-reset SMPS, improving reliability and reducing BOM count.
Improved dV/dt ruggedness	Withstands 5.9 V/ns peak diode recovery dV/dt - critical for stable operation during body diode commutation.

Applications

Switch Mode Power Supply (Flyback)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in offline flyback converter with US line input (100–120 VAC) and transformer reset. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via primary winding; operates in discontinuous conduction mode (DCM) at ~65 kHz. Use Value: 400 V V_DS margin accommodates reflected output voltage plus leakage spike; 630 mJ E_AS absorbs reset energy without clamping.	Use Scenario: DC-DC boost stage and inverter H-bridge switch in line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: High-efficiency power switch handling bidirectional current in battery charging and AC inversion paths. Use Value: 10 A continuous ID and 40 A pulsed IDM support surge loads; body diode t_rr ≤ 360 ns minimizes cross-conduction loss during bridge transitions.
Industrial Motor Drive (Braking)	High-Speed DC Power Switching
Use Scenario: Dynamic braking chopper in 24–48 V DC motor control systems dissipating regenerated energy into a resistor bank. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration; duty-cycled at ≤ 10% to limit average power. Use Value: Repetitive avalanche rating (I_AR = 10 A, E_AR = 12.5 mJ) sustains repeated inductive kickback without degradation.	Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads at ≥10 kHz. IC Role / Device Role / Timing Role: Fast-turning power switch replacing electromechanical relays to improve lifetime and response time. Use Value: 35 ns rise time and 22 ns fall time enable clean edge control; TO-220AB package allows direct mounting to DIN-rail heatsinks.

Switch Mode Power Supply (Flyback)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in offline flyback converter with US line input (100–120 VAC) and transformer reset.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via primary winding; operates in discontinuous conduction mode (DCM) at ~65 kHz.

Use Value: 400 V V_DS margin accommodates reflected output voltage plus leakage spike; 630 mJ E_AS absorbs reset energy without clamping.

Use Scenario: DC-DC boost stage and inverter H-bridge switch in line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: High-efficiency power switch handling bidirectional current in battery charging and AC inversion paths.

Use Value: 10 A continuous ID and 40 A pulsed IDM support surge loads; body diode t_rr ≤ 360 ns minimizes cross-conduction loss during bridge transitions.

Industrial Motor Drive (Braking)

High-Speed DC Power Switching

Use Scenario: Dynamic braking chopper in 24–48 V DC motor control systems dissipating regenerated energy into a resistor bank.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration; duty-cycled at ≤ 10% to limit average power.

Use Value: Repetitive avalanche rating (I_AR = 10 A, E_AR = 12.5 mJ) sustains repeated inductive kickback without degradation.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads at ≥10 kHz.

IC Role / Device Role / Timing Role: Fast-turning power switch replacing electromechanical relays to improve lifetime and response time.

Use Value: 35 ns rise time and 22 ns fall time enable clean edge control; TO-220AB package allows direct mounting to DIN-rail heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, R_DS(on) = 1.4 Ω @ 10 V, Q_g = 12 nC, TO-220FP package (isolated tab)	Higher voltage rating but higher on-resistance; lower Q_g reduces drive demand but limits current capability (4 A ID)	Prefer when isolation from heatsink is required and lower gate drive power is prioritized over conduction loss.
IXTP10N50D2	500 V V_DS, R_DS(on) = 0.65 Ω @ 10 V, Q_g = 24 nC, TO-220AB, enhanced avalanche rating (E_AS = 1000 mJ)	Higher avalanche robustness and same package; slightly higher R_DS(on) increases conduction loss by ~18%	Prefer for mission-critical SMPS where extended unclamped energy handling is required beyond 630 mJ.

Compared with STP4NK50ZFP and IXTP10N50D2, the IRF740APBF-BE3 offers optimal balance of 400 V rating, 0.55 Ω R_DS(on), and proven 630 mJ avalanche capability in standard TO-220AB - making it ideal for cost-sensitive, high-volume flyback and forward converters where 10 A continuous current and thermal performance are primary constraints.

Availability

IRF740APBF-BE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed DC power switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF740APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF740A family is designed for high-efficiency, high-reliability power conversion in industrial and computing power supplies - emphasizing avalanche tolerance, low gate charge, and thermal stability in TO-220 packages.

FAQ

What is the maximum continuous drain current for IRF740APBF-BE3 at 100 °C case temperature?

The IRF740APBF-BE3 supports 6.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the –55 to +150 °C operating range. At 25 °C case temperature, IRF740APBF-BE3 delivers 10 A continuous current.

Does IRF740APBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, IRF740APBF-BE3 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include: V_SD = 2.0 V at I_S = 10 A and T_J = 25 °C; reverse recovery time t_rr = 240–360 ns; and reverse recovery charge Q_rr = 1.9–2.9 μC. These values are measured under standardized conditions (I_F = 10 A, dI/dt = 100 A/μs).

Is IRF740APBF-BE3 RoHS-compliant and halogen-free?

Yes, IRF740APBF-BE3 is both RoHS-compliant and halogen-free, as indicated by the "-BE3" suffix in the ordering code. This designation confirms compliance with EU Directive 2011/65/EU and IEC 61249-2-21 for bromine and chlorine content ≤ 900 ppm, and total halogens ≤ 1500 ppm.

What is the gate-source voltage rating for IRF740APBF-BE3, and can it be driven directly from a 5 V microcontroller?

The IRF740APBF-BE3 has a gate-source voltage rating of ±30 V, but its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V. While it may turn on partially at 5 V, full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) = 0.55 Ω. Driving IRF740APBF-BE3 directly from a 5 V MCU risks incomplete turn-on and excessive conduction loss - a level-shifting gate driver is recommended.

How does the avalanche rating of IRF740APBF-BE3 impact its use in transformer-reset SMPS topologies?

The IRF740APBF-BE3's single-pulse avalanche energy rating of 630 mJ (E_AS) and repetitive avalanche current of 10 A (I_AR) allow it to safely absorb inductive energy during transformer reset without external clamping components. In flyback and forward converters, this eliminates snubber losses and improves efficiency - provided layout minimizes stray inductance and peak V_DS stays within 400 V.

IRF740APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF740APBF-BE3 FAQ

1.How can I place an order for IRF740APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740APBF-BE3 reliable?

The price and inventory of IRF740APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF740APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740APBF-BE3?

IRF740APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740APBF-BE3?

For technical support, including IRF740APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740APBF-BE3 requirements.

6.How does Aetrix verify that IRF740APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF740APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF740APBF-BE3?

All IRF740APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF740APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740APBF-BE3 part is unused and in its original packaging.

Return procedure for IRF740APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …