Vishay Siliconix IRF740ASTRR
- Part No.:
- IRF740ASTRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF740ASTRR.pdf
- Description:
- MOSFET N-CH 400V 10A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,481
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF740ASTRR from Vishay Siliconix is a 400 V, 10 A, N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 36 nC total gate charge, and 630 mJ single-pulse avalanche energy - designed for high-voltage switching in flyback and forward SMPS topologies.
For engineers reviewing the IRF740ASTRR datasheet, IRF740ASTRR pinout, IRF740ASTRR application, or IRF740ASTRR equivalent, this part supports stable high-voltage DC-DC conversion with verified dV/dt ruggedness (5.9 V/ns), low Qgd/Qg ratio for fast turn-off, and robust body diode recovery (trr = 240–360 ns).
Technical Context
This MOSFET employs planar vertical DMOS technology optimized for high-voltage unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 1.0 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking.
The device integrates a co-packaged body diode with characterized reverse recovery (Qrr = 1.9–2.9 μC, trr = 240–360 ns) and peak dV/dt immunity (5.9 V/ns), supporting hard-switched topologies where diode commutation stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in universal-input (85–265 VAC) SMPS with ≥2× safety margin |
| RDS(on) | 0.55 Ω @ VGS = 10 V - limits conduction loss to ≤5.5 W at 10 A continuous drain current |
| Qg | 36 nC - enables efficient drive with standard gate drivers (e.g., IR2110) without excessive power dissipation |
| EAS | 630 mJ - withstands unclamped inductive energy in flyback transformer reset without failure |
| trr | 240–360 ns - minimizes switching loss and voltage overshoot during diode reverse recovery in forward converters |
| RthJC | 1.0 °C/W - allows 125 W power dissipation with ≤125 °C junction rise above case temperature |
| ID (TC = 100 °C) | 6.3 A - defines usable continuous current under real-world heatsink-limited conditions |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated heat slug (drain-connected tab), 3-pin configuration optimized for high-current PCB mounting and thermal transfer via copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires ≤±30 V drive; low 9.9 nC Qgs enables fast turn-on |
| Pin 2 (D) | Drain | High-voltage output node; electrically connected to exposed thermal pad; must be routed with creepage/clearance for 400 V |
| Pin 3 (S) | Source | Power return reference; ties to gate driver ground; carries full load current and body diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 36 nC / 16 nC = 2.25 - improves turn-off speed and reduces Miller-induced shoot-through risk in half-bridge designs |
| Characterized Coss eff. | 61 pF - enables accurate snubber design and predicts voltage rise time during turn-off (dV/dt = ID/Coss eff.) |
| Avalanche-rated | 630 mJ single-pulse EAS - eliminates need for external clamping in transformer-reset circuits |
| Body diode Qrr | 1.9–2.9 μC - quantifies stored charge that must be removed before diode blocking, critical for ZVS timing |
| RoHS-compliant & halogen-free | IRF740ASTRRPbFa marking confirms lead-free and halogen-free construction per Vishay Doc. 99912 |
Applications
| Offline Flyback SMPS | UPS Inverter Stage |
|---|---|
|
Use Scenario: Primary-side switch in 100–300 W AC/DC adapter with universal input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V drain stress and repetitive 10 A peak currents during flyback reset. Use Value: 630 mJ EAS rating absorbs transformer leakage energy without snubber, reducing component count and board space. |
Use Scenario: DC bus switching in line-interactive UPS inverters delivering clean 230 VAC output during battery backup. IC Role / Device Role / Timing Role: Low-loss, high-reliability output stage switch operating at 20–50 kHz with bidirectional body diode conduction. Use Value: 240–360 ns trr and 1.9–2.9 μC Qrr minimize switching loss and voltage spikes during polarity reversal. |
| Industrial Motor Drive H-Bridge | High-Voltage DC-DC Converter |
|
Use Scenario: High-side switch in 48–100 V DC motor control modules requiring >100 V transient tolerance. IC Role / Device Role / Timing Role: Fast-turning N-channel switch paired with bootstrap gate driver; handles inductive kickback and regenerative braking. Use Value: 5.9 V/ns dV/dt rating prevents false turn-on during high-slew-rate commutation events. |
Use Scenario: Step-down stage in 400 V input industrial power supply converting to 24 V/10 A output. IC Role / Device Role / Timing Role: Primary switch in hard-switched buck-derived topology operating at fixed 100 kHz with 50% duty cycle. Use Value: 0.55 Ω RDS(on) limits conduction loss to 55 W at full load, enabling compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK40ZFP | 400 V, 3.5 A, RDS(on) = 1.4 Ω, Qg = 12 nC - lower current, higher on-resistance, lower gate charge | Lower power density; suitable only for ≤50 W SMPS; not rated for 10 A continuous operation | Select when gate drive is limited (e.g., microcontroller GPIO) and power level is <50 W. |
| IXTP4N40P | 400 V, 4.0 A, RDS(on) = 1.2 Ω, Qg = 14 nC - TO-220 package, lower current, higher RDS(on), no D2PAK thermal performance | Requires larger heatsink; unsuitable for high-density SMT layouts; lacks same avalanche ruggedness data | Choose for through-hole prototyping or legacy board reuse where D2PAK footprint is unavailable. |
Compared with STP4NK40ZFP and IXTP4N40P, IRF740ASTRR delivers 2.8× higher continuous current, 2.5× lower RDS(on), and verified 630 mJ avalanche capability - making it uniquely suited for production-grade 100–300 W high-voltage switching where thermal density and unclamped energy absorption are critical.
Availability
IRF740ASTRR is available at Aetrix Electronics and suitable for offline flyback SMPS, UPS inverter stages, and industrial motor drive H-bridges requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF740ASTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF740AS family was engineered for high-voltage, medium-power switching in cost-sensitive yet reliability-critical power supplies - emphasizing avalanche robustness, low gate charge, and thermally efficient D2PAK packaging.
FAQ
What is the maximum continuous drain current for IRF740ASTRR at 100 °C case temperature?
The IRF740ASTRR supports 6.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under realistic heatsink conditions and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF740ASTRR must be mounted on adequate copper area to maintain this rating.
Does IRF740ASTRR have a fully characterized body diode for synchronous rectification?
No - the IRF740ASTRR body diode is characterized for reverse recovery (trr = 240–360 ns, Qrr = 1.9–2.9 μC) and forward voltage (VSD = 2.0 V at 10 A), but it is not optimized for synchronous rectification. Its relatively high VSD and Qrr make it less efficient than dedicated Schottky or trench MOSFETs in SR applications. The IRF740ASTRR is intended for primary-side switching, not secondary-side rectification.
Is IRF740ASTRR pin-compatible with IRF740AL or SiHF740ASTRR?
Yes - IRF740ASTRR, IRF740AL, and SiHF740ASTRR all use the D2PAK (TO-263) package with identical 3-pin G-D-S layout and mechanical footprint. However, electrical differences exist: IRF740AL has higher RDS(on) (0.65 Ω vs. 0.55 Ω) and lower EAS (520 mJ vs. 630 mJ), while SiHF740ASTRR shares identical specs but is Vishay's alternate branded part. The IRF740ASTRR can replace IRF740AL in most designs with improved performance.
What is the gate threshold voltage range for IRF740ASTRR, and how does it affect drive requirements?
The IRF740ASTRR has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This ensures reliable turn-on with standard 10 V logic-level gate drivers while avoiding unintended conduction from noise. Because the IRF740ASTRR is not a logic-level MOSFET, it requires ≥8 V gate drive for full enhancement; operation below 6 V risks incomplete turn-on and excessive RDS(on).
Can IRF740ASTRR be used in zero-voltage switching (ZVS) topologies?
Yes - the IRF740ASTRR's well-characterized Coss (170 pF typical), Coss eff. (61 pF), and Qrr (1.9–2.9 μC) enable predictable resonant tank behavior in ZVS LLC or phase-shifted full-bridge designs. Its 630 mJ EAS also provides margin against voltage overshoot during soft-switching transitions. However, the IRF740ASTRR's 36 nC Qg demands careful gate driver sizing to maintain ZVS across load range.
IRF740ASTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF740ASTRR FAQ
1.How can I place an order for IRF740ASTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF740ASTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF740ASTRR reliable?
The price and inventory of IRF740ASTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740ASTRR is usually 5 days.
3.What payment methods are accepted for IRF740ASTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740ASTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF740ASTRR?
IRF740ASTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF740ASTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF740ASTRR?
For technical support, including IRF740ASTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740ASTRR requirements.
6.How does Aetrix verify that IRF740ASTRR is sourced from the original manufacturer or authorized distributors?
All IRF740ASTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740ASTRR meets industry standards.
7.What is the process for return or replacement of IRF740ASTRR?
All IRF740ASTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF740ASTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF740ASTRR part is unused and in its original packaging.
Return procedure for IRF740ASTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF740ASTRR Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

