Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740ASTRRPBF

Name: IRF740ASTRRPBF
Brand: Vishay Siliconix
SKU: IRF740ASTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF740ASTRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF740ASTRRPBF.pdf

Description:: MOSFET N-CH 400V 10A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,386

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF740ASTRRPBF from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 36 nC total gate charge, and 630 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in flyback and forward SMPS topologies with US-line input.

For engineers reviewing the IRF740ASTRRPBF datasheet, IRF740ASTRRPBF pinout, IRF740ASTRRPBF application, or IRF740ASTRRPBF equivalent, key selection criteria include its 400 V V_DS, 1.0 °C/W R_thJC, dV/dt ruggedness of 5.9 V/ns, and body diode recovery time of 240–360 ns - all critical for reliable high-speed power conversion design.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage switching, with fully characterized C_iss (1030 pF), C_oss (170 pF), and C_rss (7.7 pF) enabling accurate snubber and gate drive design. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under varying bias conditions.

The device integrates a robust intrinsic body diode rated for 10 A continuous and 40 A pulsed conduction, with reverse recovery charge Q_rr of 1.9–2.9 μC and trr of 240–360 ns - parameters directly validated under 100 A/μs dI/dt and TJ ≤ 150 °C per test condition fig. 12b.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 115 VAC-input SMPS with ≥2× voltage margin
R_DS(on)	0.55 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 6.3 A continuous drain current
Q_g	36 nC - determines gate driver current requirement (~3.6 mA avg. for 100 kHz switching)
E_AS	630 mJ - sustains unclamped inductive switching events without failure (tested per fig. 12a)
R_thJC	1.0 °C/W - allows 125 W power dissipation with 125 °C ΔT to case (TC = 25 °C)
dV/dt rating	5.9 V/ns - ensures immunity to parasitic turn-on in hard-switched converters
Body diode t_rr	240–360 ns - defines minimum dead-time needed to prevent shoot-through in bridge configurations

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with standard PCB layout guidelines per AN826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; 9.9 nC Q_gs sets Miller plateau duration
D (Drain)	High-voltage power output	Connected to exposed thermal pad; carries full load current and avalanche energy
S (Source)	Reference node / return path	Common node for gate drive reference and current sensing; ties to power ground

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	36 nC / 16 nC - reduces switching losses and improves EMI performance in high-frequency SMPS
Effective C_oss	61 pF - accurately models output capacitance during V_DS rise from 0 to 320 V (fig. 5)
Avalanche-rated construction	12.5 mJ repetitive & 630 mJ single-pulse - eliminates need for external clamping in transformer reset circuits
Characterized dV/dt ruggedness	5.9 V/ns - validated under dynamic stress, enabling reliable operation in noisy high-dV/dt environments
RoHS-compliant, halogen-free	Meets Vishay material categorization per doc. 99912 - suitable for industrial and telecom applications with strict environmental compliance

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in single-transistor flyback converter for AC/DC adapter with 115 VAC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer reset; operates at 65–100 kHz. Use Value: 400 V V_DS and 630 mJ E_AS eliminate external snubbers while maintaining >85% efficiency at full load.	Use Scenario: DC-DC boost stage in online UPS battery charger handling 380–400 VDC bus. IC Role / Device Role / Timing Role: Fast-switching power transistor in PFC front-end; handles 10 A continuous conduction mode current. Use Value: 0.55 Ω R_DS(on) limits conduction loss to <0.6 W at 10 A, reducing heatsink requirements by 30% vs. legacy 1 Ω devices.
High-Speed Power Switching	Industrial Motor Drive Inverter Stage
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module. IC Role / Device Role / Timing Role: Isolated high-side switch driving 24 VDC inductive loads with fast turn-off (<32 ns fall time). Use Value: 22 ns fall time and 5.9 V/ns dV/dt rating prevent false triggering during rapid load disconnection transients.	Use Scenario: Low-side switch in three-phase IGBT gate driver auxiliary supply. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated DC/DC bias supply powering gate drivers; conducts 6.3 A continuously. Use Value: Body diode t_rr of 240–360 ns enables zero-voltage switching (ZVS) alignment with main IGBT transitions, cutting auxiliary supply losses by 40%.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in single-transistor flyback converter for AC/DC adapter with 115 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer reset; operates at 65–100 kHz.

Use Value: 400 V V_DS and 630 mJ E_AS eliminate external snubbers while maintaining >85% efficiency at full load.

Use Scenario: DC-DC boost stage in online UPS battery charger handling 380–400 VDC bus.

IC Role / Device Role / Timing Role: Fast-switching power transistor in PFC front-end; handles 10 A continuous conduction mode current.

Use Value: 0.55 Ω R_DS(on) limits conduction loss to <0.6 W at 10 A, reducing heatsink requirements by 30% vs. legacy 1 Ω devices.

High-Speed Power Switching

Industrial Motor Drive Inverter Stage

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: Isolated high-side switch driving 24 VDC inductive loads with fast turn-off (<32 ns fall time).

Use Value: 22 ns fall time and 5.9 V/ns dV/dt rating prevent false triggering during rapid load disconnection transients.

Use Scenario: Low-side switch in three-phase IGBT gate driver auxiliary supply.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated DC/DC bias supply powering gate drivers; conducts 6.3 A continuously.

Use Value: Body diode t_rr of 240–360 ns enables zero-voltage switching (ZVS) alignment with main IGBT transitions, cutting auxiliary supply losses by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 11 nC, TO-220FP package	Lower current rating and higher on-resistance limit use to <5 A continuous loads; smaller package reduces thermal mass	Select when space-constrained board layout prioritizes footprint over current capacity and thermal performance
IXTH12N40L2	400 V, 12 A, R_DS(on) = 0.42 Ω, Q_g = 42 nC, TO-247 package	Higher current and lower R_DS(on) improve conduction efficiency but require larger heatsink due to TO-247 thermal resistance	Select when system demands >10 A continuous current and can accommodate through-hole mounting and higher gate drive power

Compared with IRF740ASTRRPBF, STP4NK40ZFP offers lower gate charge but sacrifices 63% current capability and doubles conduction loss, while IXTH12N40L2 delivers superior current and R_DS(on) at the cost of 17% higher Q_g and incompatible D2PAK surface-mount form factor.

Availability

IRF740ASTRRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial switching applications requiring stable component supply across production lifecycles.

Supply support for IRF740ASTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal components for industrial and computing markets.

The IRF740AS family targets high-voltage power conversion systems where avalanche ruggedness, low gate charge, and repeatable dV/dt performance are essential - especially in cost-sensitive, high-volume SMPS designs.

FAQ

What is the maximum continuous drain current rating for IRF740ASTRRPBF at 100 °C case temperature?

The IRF740ASTRRPBF has a maximum continuous drain current (I_D) of 6.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 10 A rating at 25 °C case temperature, based on a linear derating factor of 1.0 W/°C and R_thJC = 1.0 °C/W. The IRF740ASTRRPBF must be mounted on a PCB with adequate copper area to maintain safe junction temperature under sustained load.

Does IRF740ASTRRPBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRF740ASTRRPBF features a fully characterized intrinsic body diode with t_rr = 240–360 ns, Q_rr = 1.9–2.9 μC, and V_SD = 2.0 V at I_S = 10 A and T_J = 25 °C. These parameters are measured under standardized conditions (dI/dt = 100 A/μs, T_J = 25 °C) and documented in the "Drain-Source Body Diode Characteristics" section. The IRF740ASTRRPBF body diode is suitable for synchronous rectification and freewheeling in non-isolated DC/DC converters.

Is IRF740ASTRRPBF RoHS-compliant and halogen-free?

Yes, IRF740ASTRRPBF is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. The "-TRRPBF" suffix explicitly denotes RoHS-compliant, green packaging. This version uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), making it suitable for lead-free reflow assembly without special handling.

What is the gate threshold voltage range for IRF740ASTRRPBF, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for IRF740ASTRRPBF is specified as 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise. Because the IRF740ASTRRPBF requires ≥10 V for full enhancement (R_DS(on) = 0.55 Ω), gate drive circuits must deliver stable 10–15 V with sufficient peak current to charge 36 nC Q_g within nanoseconds.

Can IRF740ASTRRPBF replace IRF740APbF in an existing design?

Yes, IRF740ASTRRPBF is a direct drop-in replacement for IRF740APbF, sharing identical electrical specifications, thermal characteristics, pinout, and D2PAK (TO-263) package dimensions. Both parts meet the same product summary (V_DS = 400 V, R_DS(on) = 0.55 Ω, Q_g = 36 nC) and absolute maximum ratings. The IRF740ASTRRPBF differs only in environmental compliance (RoHS/halogen-free) and tape-and-reel packaging (TRR), with no impact on circuit performance or layout.

IRF740ASTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF740ASTRRPBF FAQ

1.How can I place an order for IRF740ASTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740ASTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740ASTRRPBF reliable?

The price and inventory of IRF740ASTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740ASTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF740ASTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740ASTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740ASTRRPBF?

IRF740ASTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740ASTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740ASTRRPBF?

For technical support, including IRF740ASTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740ASTRRPBF requirements.

6.How does Aetrix verify that IRF740ASTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF740ASTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740ASTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF740ASTRRPBF?

All IRF740ASTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740ASTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740ASTRRPBF part is unused and in its original packaging.

Return procedure for IRF740ASTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …