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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740BPBF

Name: IRF740BPBF
Brand: Vishay Siliconix
SKU: IRF740BPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF740BPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF740BPBF.pdf

Description:: MOSFET N-CH 400V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF740BPBF from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 194 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and motor drives.

For engineers reviewing the IRF740BPBF datasheet, IRF740BPBF pinout, IRF740BPBF application, or IRF740BPBF equivalent, key selection criteria include its 400 V V_DS, 0.6 Ω on-resistance at 10 V drive, 30 nC Q_g, 147 W P_D, and rugged body diode with 230 ns t_rr-all critical for hard-switched industrial power stages.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage operation with low capacitance (C_iss = 526 pF, C_oss = 59 pF) and fast switching (t_d(on) = 12–24 ns, t_r = 18–36 ns). Its gate threshold voltage (3–5 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The device integrates an avalanche-rated body diode (E_AS = 194 mJ) and supports linear-mode operation up to 150 °C junction temperature. Thermal resistance R_thJC = 0.85 °C/W enables efficient heatsinking in high-power applications like induction heating and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports primary-side switching in 380 V DC bus and 400 V AC rectified systems
R_DS(on) max	0.6 Ω at V_GS = 10 V - limits conduction loss to ≤30 W at 10 A continuous drain current
Q_g max	30 nC - determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	194 mJ - enables unclamped inductive switching without failure in motor drive freewheeling paths
t_rr	230 ns - defines diode recovery time during commutation, critical for reducing voltage spikes in bridge circuits
R_thJC	0.85 °C/W - allows ≥120 W dissipation with ≤100 °C case-to-ambient delta under forced-air cooling

Pinout & Package

IRF740BPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 147 W maximum power dissipation at T_C = 25 °C. The package provides mechanical robustness and thermal performance suitable for industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 526 pF affects driver sizing and EMI filtering
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; withstands 400 V blocking and conducts pulsed current up to 23 A
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; body diode anode is internally tied to source

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	18 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–100 kHz SMPS
Avalanche energy rating	194 mJ - eliminates need for external snubbers in inductive load switching (e.g., relay drivers, solenoid controls)
Rugged body diode	t_rr = 230 ns, Q_rr = 1.6 μC - reduces reverse recovery stress in half-bridge and synchronous rectifier configurations
High dV/dt immunity	24 V/ns at T_J = 125 °C - suppresses false turn-on in high-noise environments like motor drives and welders

Applications

Server SMPS	Induction Heating
Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifiers operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switching element in forward or LLC resonant converter primary leg. Use Value: 400 V V_DS and 0.6 Ω R_DS(on) enable >95% efficiency at full load while maintaining margin over 380 V DC bus.	Use Scenario: Half-bridge inductor driver for 20–50 kHz domestic cooktops with variable power control. IC Role / Device Role / Timing Role: Fast-switching high-current switch handling repetitive 23 A pulses with controlled diode recovery. Use Value: 194 mJ E_AS and 230 ns t_rr prevent shoot-through and voltage overshoot during zero-crossing commutation.
Industrial Motor Drives	Battery Chargers
Use Scenario: Inverter output stage in 3 kW HVAC compressors using six-pack IGBT replacement topology. IC Role / Device Role / Timing Role: Low-loss switching device in three-phase bridge with integrated body diode freewheeling. Use Value: 147 W P_D and R_thJC = 0.85 °C/W allow direct mounting to aluminum heatsinks without thermal derating at 40 °C ambient.	Use Scenario: Isolated DC-DC stage in 3 kW EVSE Level 2 chargers converting 400 V DC to 12–48 V battery interface. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in flyback or forward converter secondary side. Use Value: 10 A continuous ID and 1.2 V V_SD minimize conduction loss in high-duty-cycle charging profiles.

Server SMPS

Induction Heating

Use Scenario: Primary-side switch in 80+ Gold-rated 1 kW telecom rectifiers operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element in forward or LLC resonant converter primary leg.

Use Value: 400 V V_DS and 0.6 Ω R_DS(on) enable >95% efficiency at full load while maintaining margin over 380 V DC bus.

Use Scenario: Half-bridge inductor driver for 20–50 kHz domestic cooktops with variable power control.

IC Role / Device Role / Timing Role: Fast-switching high-current switch handling repetitive 23 A pulses with controlled diode recovery.

Use Value: 194 mJ E_AS and 230 ns t_rr prevent shoot-through and voltage overshoot during zero-crossing commutation.

Industrial Motor Drives

Battery Chargers

Use Scenario: Inverter output stage in 3 kW HVAC compressors using six-pack IGBT replacement topology.

IC Role / Device Role / Timing Role: Low-loss switching device in three-phase bridge with integrated body diode freewheeling.

Use Value: 147 W P_D and R_thJC = 0.85 °C/W allow direct mounting to aluminum heatsinks without thermal derating at 40 °C ambient.

Use Scenario: Isolated DC-DC stage in 3 kW EVSE Level 2 chargers converting 400 V DC to 12–48 V battery interface.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in flyback or forward converter secondary side.

Use Value: 10 A continuous ID and 1.2 V V_SD minimize conduction loss in high-duty-cycle charging profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4 A I_D, 1.5 Ω R_DS(on), TO-220FP package (full-pack)	Lower current rating and higher on-resistance limit use to <5 A loads; smaller footprint but lower thermal mass	Select when 500 V margin is required and peak current stays below 4 A; verify layout compatibility with non-isolated tab
IXTP12N50D2	500 V V_DS, 12 A I_D, 0.55 Ω R_DS(on), D2PAK surface-mount	Higher current capability and lower R_DS(on), but requires PCB thermal relief and reflow-compatible assembly	Choose for automated SMT production and higher current density; confirm heatsink interface for D2PAK thermal pad

Compared with STP4NK50ZFP and IXTP12N50D2, the IRF740BPBF offers balanced 400 V/10 A capability in a thermally robust, isolated-tab TO-220AB package-ideal for manual assembly, field-replaceable designs, and applications requiring proven avalanche ruggedness without SMT infrastructure.

Availability

IRF740BPBF is available at Aetrix Electronics and suitable for server SMPS, induction heating inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free termination.

Supply support for IRF740BPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The D Series Power MOSFET product line-including IRF740BPBF-is engineered for high-voltage industrial switching, emphasizing low R_DS(on) × Q_g, avalanche energy rating, and body diode robustness in demanding power conversion systems.

FAQ

What is the maximum continuous drain current for IRF740BPBF at 100 °C case temperature?

The IRF740BPBF supports 6 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal constraints of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions. The IRF740BPBF datasheet specifies this value explicitly in the Absolute Maximum Ratings section.

Does IRF740BPBF have a RoHS-compliant version?

Yes, IRF740BPBF is the lead-free, RoHS-compliant variant of the IRF740B series, indicated by the "PbF" suffix per Vishay's ordering nomenclature. It uses matte tin-plated leads and complies with EU Directive 2011/65/EU. The IRF740BPBF datasheet confirms Pb-free construction and references compliance documentation at www.vishay.com/doc?99912.

What is the gate threshold voltage range for IRF740BPBF?

The IRF740BPBF has a gate threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C and I_D = 250 μA, as specified in the Static Characteristics table. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near 0 V. The IRF740BPBF's typical V_GS(th) is centered at 4 V, supporting robust noise margin in industrial environments.

Can IRF740BPBF be used in linear (active) mode operation?

Yes, the IRF740BPBF is rated for linear-mode operation up to T_J = 150 °C, as confirmed by its Safe Operating Area (SOA) curve in Figure 8 of the datasheet. Its SOA includes a bounded region for DC and pulse conditions, enabling use in analog regulators and electronic loads. When operating IRF740BPBF in linear mode, designers must strictly adhere to the SOA limits and ensure adequate heatsinking to avoid thermal runaway.

What is the typical reverse recovery time of the body diode in IRF740BPBF?

The IRF740BPBF body diode exhibits a typical reverse recovery time (t_rr) of 230 ns at T_J = 25 °C, I_F = 5 A, dI/dt = 100 A/μs, and V_R = 25 V, per the Dynamic Characteristics table. This value directly impacts switching losses and voltage overshoot in bridge configurations. The IRF740BPBF's t_rr is measured under standardized conditions and remains stable across its operating temperature range.

IRF740BPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 526 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF740BPBF FAQ

1.How can I place an order for IRF740BPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740BPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740BPBF reliable?

The price and inventory of IRF740BPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740BPBF is usually 5 days.

3.What payment methods are accepted for IRF740BPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740BPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740BPBF?

IRF740BPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740BPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740BPBF?

For technical support, including IRF740BPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740BPBF requirements.

6.How does Aetrix verify that IRF740BPBF is sourced from the original manufacturer or authorized distributors?

All IRF740BPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740BPBF meets industry standards.

7.What is the process for return or replacement of IRF740BPBF?

All IRF740BPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740BPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740BPBF part is unused and in its original packaging.

Return procedure for IRF740BPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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