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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740HPBF

Name: IRF740HPBF
Brand: Vishay Siliconix
SKU: IRF740HPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF740HPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF740HPBF.pdf

Description:: HV POWER MOSFET 400 V (D-S) 150

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF740HPBF from Vishay Siliconix is a 400 V, 9.4 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in SMPS and PFC stages with R_DS(on) = 0.550 Ω at V_GS = 10 V, Q_g = 39 nC, and avalanche-rated E_AS = 56 mJ - deployed in telecom rectifiers and HID lighting ballasts.

For engineers reviewing the IRF740HPBF datasheet, IRF740HPBF pinout, IRF740HPBF application, or IRF740HPBF equivalent, key selection criteria include its 400 V V_DS, 0.550 Ω on-resistance at 10 V gate drive, 39 nC total gate charge, 125 W power dissipation, and TO-220AB thermal performance (R_thJC = 1.0 °C/W).

Technical Context

This N-channel enhancement-mode MOSFET features low figure-of-merit (R_DS(on) × Q_g = 21.5), reduced effective output capacitance (C_o(er) = 49 pF), and robust unclamped inductive switching capability (E_AS = 56 mJ). Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V drivers.

The device integrates a fast-recovery body diode (t_rr = 229–882 ns, Q_rr = 1.7–5.8 μC) and supports high dv/dt immunity (100 V/ns at T_J = 125 °C), making it suitable for hard-switched topologies where voltage transients and reverse recovery stress are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports primary-side switching in 380 V DC bus PFC and 48 V/54 V telecom rectifier outputs.
R_DS(on) typ	0.478 Ω at V_GS = 10 V, I_D = 4 A - enables <1.1 W conduction loss at 4.8 A continuous current.
Q_g max	39 nC - determines gate driver power requirement (~390 μC total charge per 10 kHz switching cycle).
E_AS	56 mJ - withstands single-pulse inductive energy without failure in flyback or forward converter snubbers.
t_r/t_f	23–46 ns / 17–34 ns - enables >200 kHz operation with controlled EMI in isolated DC/DC converters.
R_thJC	1.0 °C/W - allows 125 W dissipation with ≤125 °C junction rise above case, supporting forced-air heatsink designs.

Pinout & Package

IRF740HPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 125 W at T_C = 25 °C and compliant with lead (Pb)-free and halogen-free requirements.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level gate drive; input capacitance C_iss = 1057 pF requires ≥1 A peak driver for fast switching.
D (Drain)	High-side power switch node	Connected to TO-220AB metal tab; electrically tied to drain - must be insulated from heatsink unless referenced to same potential.
S (Source)	Power return reference	Serves as common return for gate drive and load current; source inductance directly impacts switching stability and dV/dt immunity.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	21.5 Ω·nC - reduces combined conduction + switching loss in high-frequency PFC boost stages.
Avalanche energy rating	56 mJ single-pulse - eliminates need for external clamping in inductive load switching (e.g., motor drives, welding inverters).
Body diode Q_rr	1.7–5.8 μC - minimizes reverse recovery losses during synchronous rectification or freewheeling in half-bridge configurations.
High dv/dt immunity	100 V/ns at 125 °C - prevents false turn-on in high-noise industrial environments with fast-rising bus voltages.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW 48 V telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100–150 kHz with zero-voltage switching assist. Use Value: 0.478 Ω R_DS(on) limits conduction loss to <1.2 W at 4.8 A RMS, while 56 mJ E_AS absorbs clamp energy during transient overloads.	Use Scenario: Boost PFC stage in 1U server PSU delivering 80 PLUS Titanium efficiency. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in continuous conduction mode (CCM) boost converter. Use Value: Low C_o(er) = 49 pF and 39 nC Q_g enable clean 200 kHz switching with <150 mW gate drive loss and minimal EMI filtering burden.
HID Lighting Ballast	Solar PV Inverter
Use Scenario: Resonant half-bridge driver for 250 W metal halide lamp ignition and regulation. IC Role / Device Role / Timing Role: High-voltage switch sustaining 400 V bus and managing 100–300 kHz resonant tank current. Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during lamp strike pulses; body diode t_rr < 882 ns avoids cross-conduction loss.	Use Scenario: DC-link switching in string-level microinverter with 600 V DC input. IC Role / Device Role / Timing Role: Unidirectional high-side switch in buck-boost DC/AC stage operating at 40–60 kHz. Use Value: 400 V V_DS margin accommodates 1.15× PV open-circuit voltage surges; R_thJC = 1.0 °C/W enables compact heatsinking in sealed enclosures.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100–150 kHz with zero-voltage switching assist.

Use Value: 0.478 Ω R_DS(on) limits conduction loss to <1.2 W at 4.8 A RMS, while 56 mJ E_AS absorbs clamp energy during transient overloads.

Use Scenario: Boost PFC stage in 1U server PSU delivering 80 PLUS Titanium efficiency.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in continuous conduction mode (CCM) boost converter.

Use Value: Low C_o(er) = 49 pF and 39 nC Q_g enable clean 200 kHz switching with <150 mW gate drive loss and minimal EMI filtering burden.

HID Lighting Ballast

Solar PV Inverter

Use Scenario: Resonant half-bridge driver for 250 W metal halide lamp ignition and regulation.

IC Role / Device Role / Timing Role: High-voltage switch sustaining 400 V bus and managing 100–300 kHz resonant tank current.

Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during lamp strike pulses; body diode t_rr < 882 ns avoids cross-conduction loss.

Use Scenario: DC-link switching in string-level microinverter with 600 V DC input.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in buck-boost DC/AC stage operating at 40–60 kHz.

Use Value: 400 V V_DS margin accommodates 1.15× PV open-circuit voltage surges; R_thJC = 1.0 °C/W enables compact heatsinking in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, R_DS(on) = 1.4 Ω, Q_g = 12 nC, TO-220FP package (isolated drain)	Lower conduction loss not offset by higher R_DS(on); better suited for lower-current, higher-voltage flyback snubbers.	Select when 500 V rating is mandatory and gate drive is limited (<0.5 A); avoid in high-current PFC due to 1.4 Ω on-resistance.
IXTH12N50L	500 V V_DS, R_DS(on) = 0.55 Ω, Q_g = 32 nC, TO-247 package, no avalanche rating	Higher thermal capacity (R_thJC = 0.45 °C/W) but lacks E_AS specification - requires external protection in inductive loads.	Prefer for continuous high-power linear operation where avalanche stress is absent; not recommended for unclamped inductive switching.

Compared with STP4NK50ZFP and IXTH12N50L, the IRF740HPBF delivers balanced 400 V rating, proven 56 mJ avalanche ruggedness, and TO-220AB mechanical compatibility - making it optimal for cost-sensitive, medium-power SMPS where reliability under transient overload is critical.

Availability

IRF740HPBF is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and HID lighting ballasts requiring stable component supply across multi-year production cycles.

Supply support for IRF740HPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740HPBF belongs to Vishay's high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in telecom, lighting, and renewable energy systems where avalanche tolerance and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRF740HPBF at 100 °C case temperature?

The IRF740HPBF supports 6.0 A continuous drain current at T_C = 100 °C, derated linearly from 9.4 A at 25 °C using a 1.0 W/°C factor. This rating assumes proper heatsinking and ambient conditions meeting the R_thJC = 1.0 °C/W thermal path. The IRF740HPBF must not exceed 150 °C junction temperature under any operating condition.

Does IRF740HPBF have a specified avalanche energy rating, and how is it tested?

Yes, the IRF740HPBF is rated for 56 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 120 V, starting T_J = 25 °C, L = 9.1 mH, R_g = 25 Ω, and I_AS = 3.5 A. This rating confirms ruggedness against inductive switching transients. The IRF740HPBF is not rated for repetitive avalanche operation.

What is the gate-source threshold voltage range for IRF740HPBF, and how does it affect drive design?

The IRF740HPBF has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, meaning full enhancement occurs reliably above 4.0 V. To ensure low R_DS(on), a minimum 10 V gate drive is required. The IRF740HPBF should not be driven with logic-level (3.3 V or 5 V) sources without level-shifting circuitry.

Is IRF740HPBF suitable for use in synchronous rectification topologies?

No - the IRF740HPBF is not optimized for synchronous rectification. Its body diode reverse recovery time (t_rr = 229–882 ns) and charge (Q_rr = 1.7–5.8 μC) are too high for efficient low-loss freewheeling. The IRF740HPBF is intended for high-side switching only; dedicated low-Q_rr MOSFETs or Schottky diodes are preferred for SR applications.

What is the thermal resistance from junction to case (R_thJC) for IRF740HPBF, and how does it impact heatsink selection?

The IRF740HPBF has a maximum R_thJC of 1.0 °C/W, enabling 125 W power dissipation with only a 125 °C temperature rise from case to junction. For a target T_J ≤ 125 °C at T_C = 75 °C, the heatsink must maintain R_thCA ≤ 0.4 °C/W. The IRF740HPBF requires mechanical isolation between drain tab and heatsink unless the heatsink is at drain potential.

IRF740HPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1057 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF740HPBF FAQ

1.How can I place an order for IRF740HPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740HPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740HPBF reliable?

The price and inventory of IRF740HPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740HPBF is usually 5 days.

3.What payment methods are accepted for IRF740HPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740HPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740HPBF?

IRF740HPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740HPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740HPBF?

For technical support, including IRF740HPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740HPBF requirements.

6.How does Aetrix verify that IRF740HPBF is sourced from the original manufacturer or authorized distributors?

All IRF740HPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740HPBF meets industry standards.

7.What is the process for return or replacement of IRF740HPBF?

All IRF740HPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740HPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740HPBF part is unused and in its original packaging.

Return procedure for IRF740HPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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