Vishay Siliconix IRF740LC

Overview

IRF740LC from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF740LC datasheet, IRF740LC pinout, IRF740LC application, or IRF740LC equivalent, this device's ultra-low gate charge, enhanced ±30 V gate rating, and 4.0 V/ns peak diode recovery dV/dt support robust high-speed switching in constrained thermal environments.

Technical Context

The IRF740LC employs Vishay's LCDMOS technology to achieve reduced C_iss (1100 pF), C_oss (190 pF), and C_rss (18 pF) while maintaining ruggedness. Its 39 nC Q_g, 10 nC Q_gs, and 19 nC Q_gd enable efficient gate drive with low-loss turn-on/turn-off transitions.

Rated for repetitive avalanche energy (E_AR = 13 mJ) and single-pulse avalanche (E_AS = 520 mJ), the device supports unclamped inductive switching up to I_AS = 10 A. Its body diode exhibits t_rr = 380–570 ns and Q_rr = 2.8–4.2 μC at T_J = 25 °C, enabling fast recovery in synchronous rectification and flyback topologies.

Key Specifications

Pinout & Package

IRF740LC is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The case-to-sink thermal resistance is 0.50 °C/W with greased flat surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP4NK50ZFP and IXTP10N50D2, the IRF740LC delivers optimal trade-off of low R_DS(on), moderate Q_g, and proven 400 V reliability-making it preferred for cost-sensitive, thermally constrained 380 V DC bus applications where gate drive simplicity and conduction loss dominate design priorities.

Availability

IRF740LC is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, motor drive inverters, and uninterruptible power supplies requiring stable component supply across production lifecycles.

Supply support for IRF740LC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and high-reliability manufacturing.

The IRF740LC belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency switching applications demanding reduced gate drive loss, minimized switching energy, and robust avalanche survivability.

FAQ

What is the maximum continuous drain current for IRF740LC at 100 °C case temperature?

The IRF740LC supports 6.3 A continuous drain current at T_C = 100 °C, derived from its 10 A rating at 25 °C and linear derating factor of 1.0 W/°C. This value reflects thermal limitation-not device degradation-and assumes proper heatsinking per R_thJC = 1.0 °C/W. Always verify junction temperature using actual layout and ambient conditions before final design validation of IRF740LC.

Does IRF740LC have a built-in body diode, and what are its key recovery parameters?

Yes, IRF740LC integrates a monolithic body diode with typical reverse recovery time t_rr = 380–570 ns and reverse recovery charge Q_rr = 2.8–4.2 μC at T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs. These values enable predictable snubberless operation in flyback and resonant converters. The body diode forward voltage V_SD is ≤2.0 V at I_S = 10 A and V_GS = 0 V, confirming low conduction loss during freewheeling in IRF740LC-based topologies.

Is IRF740LC RoHS-compliant, and what does the suffix "-BE3" indicate?

Yes, IRF740LC is RoHS-compliant and halogen-free. The ordering variant IRF740LCPbF-BE3 explicitly denotes lead (Pb)-free and halogen-free construction per Vishay specification S21-0853-Rev. C. This suffix confirms compliance with JEDEC J-STD-609A Class 3 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profiles. All IRF740LC units supplied by Aetrix Electronics carry the -BE3 suffix unless otherwise specified, ensuring full regulatory alignment for global industrial deployments of IRF740LC.

What is the gate-source threshold voltage range for IRF740LC, and how does it affect drive requirements?

The IRF740LC has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 μA, indicating strong enhancement-mode behavior with tight distribution. This allows reliable turn-on with standard 5 V or 10 V logic-level gate drivers. However, full enhancement to R_DS(on) = 0.55 Ω requires V_GS ≥ 10 V; operation below 8 V increases on-resistance significantly. Designers must ensure gate drive rail stability to avoid partial turn-on losses in IRF740LC applications.

Can IRF740LC be used in avalanche mode, and what are the safe operating limits?

Yes, IRF740LC is explicitly rated for repetitive avalanche operation with I_AR = 10 A and E_AR = 13 mJ, and single-pulse avalanche up to E_AS = 520 mJ. Safe operation requires limiting pulse width per Fig. 11 thermal curves and maintaining T_J ≤ 150 °C. Avalanche testing per Fig. 12 uses V_DD = 50 V, L = 9.1 mH, R_g = 25 Ω, and I_AS = 10 A. Exceeding these conditions risks parametric shift or failure-always validate avalanche stress in final IRF740LC system layout.