Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRF740LCPBF

Part No.:
IRF740LCPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRF740LCPBF.pdf
Description:
MOSFET N-CH 400V 10A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,466

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRF740LCPBF from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits requiring robust unclamped inductive switching.

For engineers reviewing the IRF740LCPBF datasheet, IRF740LCPBF pinout, IRF740LCPBF application, or IRF740LCPBF equivalent, this part delivers verified ultra-low gate charge (39 nC), enhanced ±30 V gate rating, and 520 mJ single-pulse avalanche energy-key selection criteria for hard-switched flyback, resonant LLC, and industrial SMPS designs operating up to several MHz.

Technical Context

This device employs Vishay's LCDMOS technology to achieve reduced Ciss (1100 pF), Coss (190 pF), and Crss (18 pF) while maintaining ruggedness and 150 °C maximum junction temperature. Its 1.0 °C/W junction-to-case thermal resistance supports high-power dissipation in convection-cooled or heatsink-mounted configurations.

The IRF740LCPBF integrates a fast-recovery body diode with trr = 380–570 ns and Qrr = 2.8–4.2 μC, enabling efficient synchronous rectification and freewheeling in bridge topologies. Gate threshold voltage (2.0–4.0 V) and low 100 nA IGSS ensure stable turn-on control under noisy conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 400 V - Withstands DC bus voltages up to 320 V in continuous operation with margin for transients
RDS(on) 0.55 Ω @ VGS = 10 V - Enables ≤5.5 W conduction loss at 10 A, suitable for 100–200 W power stages
Qg 39 nC - Reduces gate driver power demand and enables use of lower-cost, lower-current drivers
EAS 520 mJ - Supports reliable unclamped inductive switching in relay drivers and solenoid controls without snubbers
tr/tf 31 ns / 20 ns - Facilitates clean switching edges in >500 kHz PWM applications with minimal overlap loss
TJ max +150 °C - Allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IRF740LCPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.0 °C/W junction-to-case thermal resistance. The case is electrically connected to the drain terminal.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control input Receives 10 V logic-level drive; ±30 V rating prevents gate oxide damage during transient coupling
D (Drain) High-side power output Connected to TO-220 tab; requires insulated mounting when heatsink is grounded
S (Source) Power return / reference node Serves as local ground reference for gate drive; connects to low-side switch or current sense resistor

Key Features

Feature Design Value
Ultra-low gate charge (39 nC) Reduces gate driver IC cost and PCB area by enabling smaller SOT-23 drivers instead of SOIC-8 alternatives
Enhanced ±30 V VGS rating Eliminates need for external Zener clamping in high-dV/dt environments like motor drives and inverters
Repetitive avalanche rated (IAR = 10 A, EAR = 13 mJ) Permits safe operation in non-zero-voltage-switched topologies without additional protection circuitry
Low Ciss/Coss/Crss Minimizes capacitive losses and improves efficiency in >1 MHz resonant converters and Class-E amplifiers

Applications

Switch-Mode Power Supply Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 100–200 W offline flyback converter with 375 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor handling full primary current and voltage stress.

Use Value: 400 V VDS and 520 mJ EAS enable direct replacement of older 500 V MOSFETs with improved efficiency and reduced snubber losses.

Use Scenario: Low-side switch in 24–48 V brushed DC motor H-bridge driving 8 A peak loads.

IC Role / Device Role / Timing Role: Fast-turning, low-RDS(on) power switch controlling motor direction and PWM speed regulation.

Use Value: 0.55 Ω RDS(on) limits conduction loss to <1.5 W at 8 A, while 31 ns rise time ensures crisp PWM edge fidelity.

Inductive Load Driver DC-DC Boost Converter

Use Scenario: Solenoid/relay driver in industrial PLC output module with 24 V supply and 1 A load.

IC Role / Device Role / Timing Role: Robust unclamped inductive switch absorbing stored energy during turn-off.

Use Value: Repetitive avalanche rating (10 A, 13 mJ) allows direct drive without external flyback diode or TVS, reducing BOM count.

Use Scenario: Switching element in 12 V to 48 V boost converter for telecom power systems.

IC Role / Device Role / Timing Role: High-efficiency main power switch operating at 250–500 kHz with high duty cycle.

Use Value: Ultra-low Qg (39 nC) and low Coss (190 pF) minimize switching losses, achieving >94% peak efficiency at 5 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP4NK50ZFP 500 V VDS, 4 A ID, 45 nC Qg, TO-220FP package (full-pack) Lower current rating and higher gate charge; better suited for lower-power, space-constrained designs Select when 500 V margin is critical and peak current stays below 4 A; verify thermal derating in same footprint
IXTH12N50L 500 V VDS, 12 A ID, 48 nC Qg, TO-247 package Higher current and voltage capability but larger footprint and higher gate drive requirement Choose for >10 A average current or forced-air cooled systems where TO-247 mechanical robustness is needed

Compared with STP4NK50ZFP and IXTH12N50L, the IRF740LCPBF offers optimal balance of 400 V rating, 10 A current, and 39 nC gate charge in the industry-standard TO-220AB package-making it ideal for cost-sensitive, medium-power industrial switchers where layout reuse and driver compatibility are priorities.

Availability

IRF740LCPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor control circuits, and inductive load drivers requiring stable component supply across industrial OEM production cycles.

Supply support for IRF740LCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740LCPBF belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency switching applications demanding reduced gate drive loss and improved system efficiency without sacrificing ruggedness.

FAQ

What is the maximum continuous drain current for IRF740LCPBF at 100 °C case temperature?

The IRF740LCPBF supports 6.3 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRF740LCPBF maintains RDS(on) stability up to 150 °C junction temperature, ensuring predictable conduction loss across its operating range.

Does IRF740LCPBF have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRF740LCPBF integrates a monolithic body diode with trr = 380–570 ns and Qrr = 2.8–4.2 μC at TJ = 25 °C, IF = 10 A, and dI/dt = 100 A/μs. This diode supports freewheeling and synchronous rectification roles. The IRF740LCPBF body diode exhibits controlled reverse recovery behavior, minimizing voltage overshoot in bridge configurations when paired with appropriate gate drive timing.

Is IRF740LCPBF RoHS-compliant and halogen-free?

Yes, the IRF740LCPBF is both RoHS-compliant and halogen-free, as confirmed by its ordering code suffix "-BE3" (per Vishay's ordering information table). It meets JEDEC JS709B and IEC 61249-2-21 requirements, with lead (Pb)-free terminations and no brominated flame retardants. The IRF740LCPBF complies with Vishay's material categorization standard documented in www.vishay.com/doc?99912.

What is the gate-source leakage current specification for IRF740LCPBF?

The IRF740LCPBF specifies gate-source leakage current (IGSS) of ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and reduces risk of unintended turn-on due to accumulated charge. The IRF740LCPBF maintains this specification across its full operating temperature range, supporting reliable operation in thermally demanding environments.

Can IRF740LCPBF be used in avalanche mode, and what energy level is rated?

Yes, the IRF740LCPBF is explicitly rated for repetitive avalanche operation with IAR = 10 A and EAR = 13 mJ, and single-pulse avalanche energy of EAS = 520 mJ (tested at VDD = 50 V, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A). This ruggedness makes the IRF740LCPBF suitable for inductive switching without external clamping-critical for relay drivers, solenoid controls, and hard-switched topologies.

IRF740LCPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRF740LCPBF FAQ

1.How can I place an order for IRF740LCPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740LCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740LCPBF reliable?

The price and inventory of IRF740LCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740LCPBF is usually 5 days.

3.What payment methods are accepted for IRF740LCPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740LCPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740LCPBF?

IRF740LCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740LCPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740LCPBF?

For technical support, including IRF740LCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740LCPBF requirements.

6.How does Aetrix verify that IRF740LCPBF is sourced from the original manufacturer or authorized distributors?

All IRF740LCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740LCPBF meets industry standards.

7.What is the process for return or replacement of IRF740LCPBF?

All IRF740LCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740LCPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740LCPBF part is unused and in its original packaging.

Return procedure for IRF740LCPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF740LCPBF Tags

  • IRF740LCPBF
  • IRF740LCPBF PDF
  • IRF740LCPBF Datasheet
  • IRF740LCPBF Specifications
  • IRF740LCPBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRF740LCPBF
  • Buy IRF740LCPBF
  • IRF740LCPBF Price
  • IRF740LCPBF Distributor
  • IRF740LCPBF Supplier
  • IRF740LCPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER