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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740S

Name: IRF740S
Brand: Vishay Siliconix
SKU: IRF740S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF740S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF740S.pdf

Description:: MOSFET N-CH 400V 10A D2PAK

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Product details

Overview

IRF740S from Vishay Siliconix is a 400 V, 10 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and repetitive avalanche rating up to 13 mJ - designed for high-voltage DC-DC converters, AC-DC SMPS primary-side switching, and motor drive half-bridges.

For engineers reviewing the IRF740S datasheet, IRF740S pinout, IRF740S application, or IRF740S equivalent, key selection criteria include its 400 V V_DS, 125 W T_C=25°C power dissipation, fast 14 ns turn-on delay, 370–790 ns body diode reverse recovery time, and surface-mount D2PAK thermal performance with 1.0 °C/W R_thJC.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology optimized for rugged unclamped inductive switching. Its dynamic dV/dt rating of 4.0 V/ns and 520 mJ single-pulse avalanche energy support reliable operation in hard-switched topologies without snubbers.

The device integrates a fast-recovery body diode (t_rr = 370–790 ns, Q_rr = 3.8–8.2 μC) and exhibits low gate-drain charge (Q_gd = 32 nC), enabling efficient zero-voltage transition (ZVT) and resonant converter designs where diode recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 380 VAC rectified input rails with 20% margin for surge and ripple
R_DS(on) @ V_GS = 10 V	0.55 Ω - limits conduction loss to ≤33 W at 10 A continuous drain current
Q_g (total)	63 nC - determines gate driver power requirement (~1.3 mW per MHz at 10 V swing)
I_D (continuous, T_C = 25 °C)	10 A - enables ≥1 kW output in TO-263-mounted flyback or forward converters
E_AS (single-pulse)	520 mJ - allows safe operation under 10 A inductive fault conditions without derating
t_rr (body diode)	370–790 ns - constrains minimum dead-time in synchronous rectification and half-bridge phase-shift control
R_thJC	1.0 °C/W - enables direct heatsink mounting for thermal management in high-power density layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 9.0 nC Q_gs ensures fast turn-on with standard gate drivers
D (Drain)	High-voltage power terminal	Connected to internal die backside and external heatsink; carries full load current and withstands 400 V transients
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; source inductance (L_S = 7.5 nH) affects switching overshoot and ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	13 mJ per pulse - enables robust operation in unregulated inductive loads without external clamping
Dynamic dV/dt immunity	4.0 V/ns - suppresses false turn-on during high-slew-rate voltage transitions in bridge configurations
Low Q_gd/Q_g ratio	32/63 ≈ 0.51 - improves Miller immunity and reduces risk of shoot-through in high-frequency half-bridges
Fast switching	t_d(on) = 14 ns, t_f = 24 ns - supports >500 kHz hard-switched operation with minimal overlap loss
Surface-mount D2PAK	125 W T_C=25°C rating - delivers TO-220-level power handling in automated assembly-compatible footprint

Applications

AC-DC Power Supply Primary Switch	DC-DC Isolated Converter Switch
Use Scenario: High-efficiency 300–500 W offline flyback or forward converter operating from universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; operates in discontinuous or critical conduction mode at 65–130 kHz. Use Value: 400 V V_DS accommodates 380 VDC bus with safety margin; 0.55 Ω R_DS(on) minimizes conduction loss at peak currents up to 10 A.	Use Scenario: 48 V–400 V input isolated DC-DC module for telecom or industrial power distribution. IC Role / Device Role / Timing Role: Primary-side active clamp or phase-shifted full-bridge switch; handles bidirectional current during ZVS transitions. Use Value: Low Q_gd (32 nC) and fast t_r/t_f enable precise timing control; 520 mJ E_AS absorbs leakage inductance energy during clamp reset.
Motor Drive Half-Bridge	Inductive Load Switching
Use Scenario: 200–400 V three-phase inverter stage driving BLDC or induction motors in HVAC and industrial drives. IC Role / Device Role / Timing Role: Upper-leg N-channel switch in half-bridge leg; commutated with complementary low-side FET and dead-time control. Use Value: Body diode t_rr (370–790 ns) and Q_rr (3.8–8.2 μC) define minimum dead-time to prevent cross-conduction; 10 A I_D supports 1.5 kW mechanical output.	Use Scenario: Solid-state relay replacement for solenoid, transformer, or heater control in PLC I/O modules and power sequencers. IC Role / Device Role / Timing Role: Unclamped inductive switching element subjected to repeated L·di/dt voltage spikes during turn-off. Use Value: Repetitive avalanche rating (13 mJ) and 40 A I_DM allow direct drive of 100–500 mH loads without snubber networks or TVS clamps.

AC-DC Power Supply Primary Switch

DC-DC Isolated Converter Switch

Use Scenario: High-efficiency 300–500 W offline flyback or forward converter operating from universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; operates in discontinuous or critical conduction mode at 65–130 kHz.

Use Value: 400 V V_DS accommodates 380 VDC bus with safety margin; 0.55 Ω R_DS(on) minimizes conduction loss at peak currents up to 10 A.

Use Scenario: 48 V–400 V input isolated DC-DC module for telecom or industrial power distribution.

IC Role / Device Role / Timing Role: Primary-side active clamp or phase-shifted full-bridge switch; handles bidirectional current during ZVS transitions.

Use Value: Low Q_gd (32 nC) and fast t_r/t_f enable precise timing control; 520 mJ E_AS absorbs leakage inductance energy during clamp reset.

Motor Drive Half-Bridge

Inductive Load Switching

Use Scenario: 200–400 V three-phase inverter stage driving BLDC or induction motors in HVAC and industrial drives.

IC Role / Device Role / Timing Role: Upper-leg N-channel switch in half-bridge leg; commutated with complementary low-side FET and dead-time control.

Use Value: Body diode t_rr (370–790 ns) and Q_rr (3.8–8.2 μC) define minimum dead-time to prevent cross-conduction; 10 A I_D supports 1.5 kW mechanical output.

Use Scenario: Solid-state relay replacement for solenoid, transformer, or heater control in PLC I/O modules and power sequencers.

IC Role / Device Role / Timing Role: Unclamped inductive switching element subjected to repeated L·di/dt voltage spikes during turn-off.

Use Value: Repetitive avalanche rating (13 mJ) and 40 A I_DM allow direct drive of 100–500 mH loads without snubber networks or TVS clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 14 nC, TO-220FP package	Lower current rating and higher on-resistance limit use to ≤150 W designs; smaller package reduces thermal mass but increases R_thJA	Choose when board space is constrained and peak current remains below 4 A; not suitable for IRF740S's 10 A continuous duty.
FQP4N40	400 V, 4.1 A, R_DS(on) = 1.6 Ω, Q_g = 18 nC, TO-220 package	No repetitive avalanche rating; lacks dV/dt immunity spec; higher R_DS(on) increases conduction loss by 2.9× at 6 A	Select only for cost-sensitive, low-duty-cycle applications where avalanche stress is absent and thermal headroom exceeds 2×.

Compared with STP4NK40ZFP and FQP4N40, the IRF740S delivers 2.5× higher continuous current, 2.5× lower R_DS(on), and certified repetitive avalanche capability - making it uniquely suited for high-power, high-reliability primary-side switching where thermal and transient robustness are non-negotiable.

Availability

IRF740S is available at Aetrix Electronics and suitable for AC-DC power supplies, DC-DC isolated converters, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant lead-free variants (IRF740STRRPbF).

Supply support for IRF740S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740S belongs to Vishay's third-generation high-voltage power MOSFET family engineered for ruggedized switching in hard-switched SMPS, UPS, and motor control - emphasizing avalanche survivability, low gate charge, and surface-mount thermal performance.

FAQ

What is the maximum continuous drain current rating for IRF740S at 100 °C case temperature?

The IRF740S supports 6.3 A continuous drain current at T_C = 100 °C, derived from its 125 W P_D rating and 1.0 °C/W R_thJC. This value reflects thermal derating for sustained operation in enclosed environments or high-ambient industrial settings, and must be validated against actual PCB copper area and heatsink interface resistance in the final layout.

Does IRF740S have a specified body diode reverse recovery charge (Q_rr)?

Yes, the IRF740S specifies Q_rr = 3.8–8.2 μC under test conditions of T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in synchronous rectifier and half-bridge topologies, and is measured using the circuit shown in Figure 12b of the IRF740S datasheet.

Is IRF740S pin-compatible with other D2PAK-packaged 400 V MOSFETs like SiHF740S?

Yes, IRF740S shares identical D2PAK (TO-263) mechanical dimensions and 3-pin G-D-S terminal assignment with SiHF740S, including matching pad layout, thermal pad geometry, and lead pitch. Both devices are drop-in replacements in PCBs designed to JEDEC MO-211 standards, though electrical parameters such as R_DS(on) and Q_g remain identical per datasheet revision S21-0901-Rev. D.

What is the gate threshold voltage range for IRF740S, and how does it affect drive requirements?

The IRF740S has a V_GS(th) range of 2.0–4.0 V at I_D = 250 μA, confirming standard-level (not logic-level) gate drive compatibility. It requires ≥10 V V_GS to achieve full R_DS(on) = 0.55 Ω; operation below 8 V results in significantly increased on-resistance and conduction loss, necessitating a robust gate driver with ≥±20 V rating and low output impedance.

Can IRF740S be used in avalanche mode for energy clamping without external components?

Yes, the IRF740S is explicitly rated for repetitive avalanche with E_AR = 13 mJ per pulse and I_AR = 10 A, verified per test condition b in the Absolute Maximum Ratings table. This allows controlled inductive turn-off energy absorption in circuits like solenoid drivers or relay replacements - provided pulse width, duty cycle, and junction temperature remain within Fig. 11 thermal limits.

IRF740S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF740S FAQ

1.How can I place an order for IRF740S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740S reliable?

The price and inventory of IRF740S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740S is usually 5 days.

3.What payment methods are accepted for IRF740S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740S?

IRF740S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740S?

For technical support, including IRF740S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740S requirements.

6.How does Aetrix verify that IRF740S is sourced from the original manufacturer or authorized distributors?

All IRF740S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740S meets industry standards.

7.What is the process for return or replacement of IRF740S?

All IRF740S units undergo pre-shipment inspection (PSI). If there is an issue with IRF740S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740S part is unused and in its original packaging.

Return procedure for IRF740S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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