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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740STRR

Name: IRF740STRR
Brand: Vishay Siliconix
SKU: IRF740STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF740STRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF740STRR.pdf

Description:: MOSFET N-CH 400V 10A D2PAK

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Product details

Overview

IRF740STRR from Vishay Siliconix is a 400 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control inverters, and industrial SMPS primary-side switching.

For engineers reviewing the IRF740STRR datasheet, IRF740STRR pinout, IRF740STRR application, or IRF740STRR equivalent, key selection criteria include its 400 V V_DS, 125 W T_C power dissipation, dV/dt ruggedness (4.0 V/ns), unclamped inductive switching capability (520 mJ E_AS), and PCB-mount thermal resistance of 40 °C/W.

Technical Context

This third-generation power MOSFET uses planar VDMOS technology optimized for high-voltage switching with low conduction loss and fast turn-on/turn-off dynamics. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

The device integrates a robust body diode with 370–790 ns reverse recovery time and 3.8–8.2 μC Q_rr, enabling reliable operation in hard-switched topologies. Thermal design leverages the D2PAK's low R_thJC of 1.0 °C/W to sustain 10 A continuous drain current at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Supports primary-side switching in 380 V DC bus and 230 V AC rectified applications without derating.
R_DS(on) @ V_GS = 10 V	0.55 Ω - Enables ≤ 55 W conduction loss at 10 A, critical for thermally constrained PCB-mount designs.
Q_g	63 nC - Determines gate drive power requirement; compatible with common 1–2 A peak gate drivers.
E_AS	520 mJ - Allows safe operation under unclamped inductive load transients without external snubbers.
dV/dt Rating	4.0 V/ns - Ensures immunity to false triggering during high-slew-rate voltage transitions in noisy environments.
T_J Range	−55 to +150 °C - Qualified for industrial and extended-temperature embedded power systems.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically and thermally tied to pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤ ±20 V drive; 9.0 nC Q_gs defines Miller plateau timing.
Pin 2 (D)	Drain	Main high-voltage power terminal; connected to large copper pour for heat sinking and low-inductance layout.
Pin 3 (S)	Source	Power return and gate reference; internal source inductance (L_S = 7.5 nH) affects switching ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	13 mJ EAR enables reliable operation under repeated overvoltage transients without degradation.
Dynamic dV/dt rating	4.0 V/ns tolerance prevents spurious turn-on in high-noise bridge-leg configurations.
Fast switching	14 ns t_d(on), 27 ns t_r, 50 ns t_d(off), 24 ns t_f support >100 kHz hard-switched SMPS designs.
Low R_thJC	1.0 °C/W junction-to-case thermal resistance allows direct heatsink mounting via drain tab.
RoHS-compliant Pb-free	IRF740STRR is lead-free and halogen-free per Vishay specification, meeting IPC-J-STD-020 moisture sensitivity level 3.

Applications

Industrial SMPS	AC Motor Drives
Use Scenario: Primary-side switch in 500–1000 W offline flyback and forward converters. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 10 A peak current. Use Value: 0.55 Ω R_DS(on) minimizes conduction loss at full load; 520 mJ E_AS absorbs transformer leakage energy safely.	Use Scenario: Inverter leg switch in 3-phase 230 V AC variable-frequency drives. IC Role / Device Role / Timing Role: N-channel high-side/low-side switching element in IGBT/MOSFET hybrid or all-MOSFET inverters. Use Value: 4.0 V/ns dV/dt rating prevents false turn-on during cross-conduction; rugged body diode supports regenerative braking.
DC-DC Converters	Lighting Ballasts
Use Scenario: Step-down (buck) or resonant LLC primary switch in telecom and server power supplies. IC Role / Device Role / Timing Role: Main power transistor operating at 100–500 kHz with 10 A average current. Use Value: 63 nC Q_g balances switching loss and gate drive complexity; 1.0 °C/W R_thJC enables compact thermal design.	Use Scenario: High-voltage switch in electronic HID and fluorescent lamp ballasts. IC Role / Device Role / Timing Role: Series switch controlling arc current in preheat and run phases. Use Value: Repetitive avalanche rating sustains repeated ignition pulses; −55 to +150 °C T_J range accommodates enclosed fixture temperatures.

Industrial SMPS

AC Motor Drives

Use Scenario: Primary-side switch in 500–1000 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 10 A peak current.

Use Value: 0.55 Ω R_DS(on) minimizes conduction loss at full load; 520 mJ E_AS absorbs transformer leakage energy safely.

Use Scenario: Inverter leg switch in 3-phase 230 V AC variable-frequency drives.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switching element in IGBT/MOSFET hybrid or all-MOSFET inverters.

Use Value: 4.0 V/ns dV/dt rating prevents false turn-on during cross-conduction; rugged body diode supports regenerative braking.

DC-DC Converters

Lighting Ballasts

Use Scenario: Step-down (buck) or resonant LLC primary switch in telecom and server power supplies.

IC Role / Device Role / Timing Role: Main power transistor operating at 100–500 kHz with 10 A average current.

Use Value: 63 nC Q_g balances switching loss and gate drive complexity; 1.0 °C/W R_thJC enables compact thermal design.

Use Scenario: High-voltage switch in electronic HID and fluorescent lamp ballasts.

IC Role / Device Role / Timing Role: Series switch controlling arc current in preheat and run phases.

Use Value: Repetitive avalanche rating sustains repeated ignition pulses; −55 to +150 °C T_J range accommodates enclosed fixture temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 A, R_DS(on) = 1.4 Ω, lower current rating and higher on-resistance.	Lower power density; suitable only for ≤200 W designs with relaxed thermal constraints.	Select when cost sensitivity outweighs efficiency and board space requirements.
FQP4N40	400 V, 4.1 A, R_DS(on) = 1.6 Ω, TO-220 package, no avalanche rating.	Lacks repetitive avalanche capability and has higher thermal resistance (R_thJA ≈ 62 °C/W).	Acceptable for non-critical, low-duty-cycle applications where transient robustness is not required.

Compared with STP4NK40ZFP and FQP4N40, the IRF740STRR delivers 2.9× higher continuous current, 2.5× lower R_DS(on), and verified repetitive avalanche performance-making it the preferred choice for industrial-grade 500+ W switching applications requiring reliability under stress.

Availability

IRF740STRR is available at Aetrix Electronics and suitable for industrial SMPS, AC motor drives, DC-DC converters, and lighting ballasts requiring stable component supply across multi-year production cycles.

Supply support for IRF740STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740STRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in high-temperature, high-dV/dt environments with emphasis on avalanche survivability and PCB-mount thermal performance.

FAQ

What is the maximum continuous drain current for IRF740STRR at 100 °C case temperature?

The IRF740STRR supports 6.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board layout and heatsinking. The IRF740STRR maintains 0.55 Ω R_DS(on) up to 150 °C junction temperature, ensuring predictable conduction loss across its operating range.

Does IRF740STRR have a qualified avalanche rating, and what does it mean for circuit design?

Yes, the IRF740STRR is rated for repetitive avalanche energy (E_AR) of 13 mJ and single-pulse avalanche energy (E_AS) of 520 mJ. This means the IRF740STRR can safely absorb inductive energy during switching transients-such as transformer leakage spikes or motor back-EMF-without failure, reducing or eliminating the need for external snubber networks in well-designed layouts.

What is the gate threshold voltage range for IRF740STRR, and how does it affect drive circuit selection?

The IRF740STRR has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing margin against noise-induced false triggering. The IRF740STRR is not a logic-level MOSFET; driving it with 5 V logic signals will result in incomplete enhancement and excessive R_DS(on).

Can IRF740STRR be used in parallel configurations, and what design considerations apply?

Yes, the IRF740STRR is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Key considerations include matched gate drive impedance, symmetrical PCB layout with identical trace lengths, and Kelvin-source connections to minimize source inductance imbalance. The IRF740STRR's 7.5 nH internal source inductance must be accounted for in high-frequency layouts.

What is the thermal resistance from junction to ambient for IRF740STRR in a typical PCB-mount configuration?

In a standard 1" square FR-4 PCB mount, the IRF740STRR has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W. This value assumes adequate copper area on the drain pad and minimal thermal vias; actual performance depends on board stack-up, copper weight, and airflow. The IRF740STRR's 1.0 °C/W R_thJC enables further thermal improvement when mounted to an external heatsink.

IRF740STRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF740STRR FAQ

1.How can I place an order for IRF740STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740STRR reliable?

The price and inventory of IRF740STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740STRR is usually 5 days.

3.What payment methods are accepted for IRF740STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740STRR?

IRF740STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740STRR?

For technical support, including IRF740STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740STRR requirements.

6.How does Aetrix verify that IRF740STRR is sourced from the original manufacturer or authorized distributors?

All IRF740STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740STRR meets industry standards.

7.What is the process for return or replacement of IRF740STRR?

All IRF740STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF740STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740STRR part is unused and in its original packaging.

Return procedure for IRF740STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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