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Vishay Siliconix IRF740STRRPBF
- Part No.:
- IRF740STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF740STRRPBF.pdf
- Description:
- MOSFET N-CH 400V 10A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,196
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Product details
Overview
IRF740STRRPBF from Vishay Siliconix is a 400 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor drives, and industrial switch-mode power supplies.
For engineers reviewing the IRF740STRRPBF datasheet, IRF740STRRPBF pinout, IRF740STRRPBF application, or IRF740STRRPBF equivalent, this part supports fast switching (14 ns turn-on delay, 24 ns fall time), dynamic dV/dt tolerance (4.0 V/ns), and PCB-mount thermal dissipation up to 3.1 W-critical for compact, high-reliability power stages.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for ruggedness and low conduction loss. Its gate threshold voltage (2.0–4.0 V) ensures stable enhancement-mode operation, while internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized for accurate switching waveform modeling.
The device integrates a fast-recovery body diode (trr = 370–790 ns, Qrr = 3.8–8.2 μC) and supports unclamped inductive switching with 520 mJ single-pulse avalanche energy-enabling robust operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Withstands DC bus voltages up to 320 V in 400 V-class SMPS designs. |
| RDS(on) | 0.55 Ω @ VGS = 10 V - Enables ≤ 33 W conduction loss at 10 A continuous drain current. |
| Qg | 63 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers. |
| ID (TC = 25 °C) | 10 A - Sustains full-rated current when mounted on heatsink or thermally enhanced PCB. |
| EAS | 520 mJ - Absorbs energy during inductive turn-off transients without failure in flyback or forward converters. |
| tr/tf | 27 ns / 24 ns - Supports >500 kHz switching frequencies with controlled EMI in isolated DC-DC stages. |
| RthJC | 1.0 °C/W - Allows direct thermal coupling to heatsink for high-power density layouts. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) with drain connected to the large copper pad on the underside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 9.0 nC gate-source charge enables low-drive-current operation. |
| D (Drain) | High-side power output | Connected to PCB thermal pad; carries full load current and dissipates heat directly to board or heatsink. |
| S (Source) | Power return reference | Provides common return path for load current and gate drive loop; critical for minimizing switching noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 13 mJ per pulse - Enables reliable operation under short-circuit or overload conditions without derating. |
| Dynamic dV/dt rating | 4.0 V/ns - Prevents false turn-on in high dv/dt environments like half-bridge leg commutation. |
| Fast switching | 14 ns td(on), 24 ns tf - Reduces switching losses and improves efficiency in high-frequency SMPS. |
| Low RDS(on) × Qg figure of merit | 34.7 Ω·nC - Balances conduction and switching loss for optimal 100–500 kHz power stage design. |
| RoHS-compliant, halogen-free | Lead (Pb)-free and halogen-free construction - Meets IPC-1752A material declaration requirements. |
Applications
| Industrial Motor Drives | Switch-Mode Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems. IC Role / Device Role / Timing Role: High-side N-channel switch in 20–100 kHz PWM-driven bridge, handling 8–12 A peak phase current. Use Value: Repetitive avalanche capability absorbs inductive kickback during PWM dead-time transitions without external clamping. |
Use Scenario: Primary-side switch in 300–400 V input offline flyback converter for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz with 320 V DC bus and 10 A peak current. Use Value: 520 mJ single-pulse avalanche energy eliminates need for snubber networks, reducing BOM count and layout area. |
| DC-DC Converters | Uninterruptible Power Supplies |
Use Scenario: Step-down (buck) converter in 48 V telecom rectifier output stage delivering 10 A at 12 V. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-efficiency 200–500 kHz buck regulator. Use Value: Low 0.55 Ω RDS(on) reduces conduction loss to <1 W at full load, improving thermal margin on double-sided PCB. |
Use Scenario: Inverter output stage in line-interactive UPS handling 1 kVA load with battery backup. IC Role / Device Role / Timing Role: Output H-bridge switch operating in 50/60 Hz quasi-square wave mode with surge current handling. Use Value: 40 A pulsed drain current (IDM) and 125 W TC=25°C power dissipation support 2× rated surge without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 4 A ID, 1.5 Ω RDS(on), TO-220FP package | Lower current rating and higher on-resistance; requires heatsink mounting | Use where higher voltage margin (500 V) is prioritized over current capacity and surface-mount assembly. |
| IXTP10N50D2 | 500 V VDS, 10 A ID, 0.65 Ω RDS(on), TO-220 package, no avalanche rating | No repetitive avalanche specification; higher RDS(on) increases conduction loss by ~18% | Select when cost-sensitive TO-220 through-hole assembly is acceptable and avalanche robustness is not required. |
Compared with STP4NK50ZFP and IXTP10N50D2, IRF740STRRPBF delivers superior thermal performance via D2PAK's 1.0 °C/W RthJC, verified avalanche ruggedness for fault-tolerant designs, and surface-mount compatibility-making it the preferred choice for space-constrained, high-reliability industrial power stages.
Availability
IRF740STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRF740STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF740STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching performance, low conduction loss, and repeatable avalanche behavior in demanding industrial power conversion applications.
FAQ
What is the maximum junction temperature for IRF740STRRPBF?
The IRF740STRRPBF has an operating junction temperature range of –55 °C to +150 °C. Its absolute maximum rating is +150 °C, and thermal design must ensure junction temperature remains below this limit under worst-case power dissipation and ambient conditions. The device's RthJC of 1.0 °C/W allows precise thermal modeling when mounted to a heatsink or thermally enhanced PCB.
Does IRF740STRRPBF support logic-level gate drive?
No, IRF740STRRPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it is specified for full enhancement at VGS = 10 V, where RDS(on) is guaranteed at 0.55 Ω. Driving it with 5 V logic will result in significantly higher on-resistance and excessive conduction loss-use a dedicated gate driver or level-shifter for 3.3 V/5 V controller interfaces.
What is the body diode reverse recovery charge (Qrr) of IRF740STRRPBF?
The IRF740STRRPBF body diode has a reverse recovery charge (Qrr) of 3.8–8.2 μC, measured at TJ = 25 °C, IF = 10 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in synchronous rectification or freewheeling applications-designers should account for it in gate drive sizing and snubber design.
Is IRF740STRRPBF pin-compatible with other D2PAK MOSFETs?
IRF740STRRPBF uses the standard 3-pin D2PAK (TO-263AB) outline per JEDEC, with G–D–S pin assignment matching industry convention. While mechanical footprint and pinout are identical to most D2PAK N-channel MOSFETs, electrical characteristics-including RDS(on), Qg, and avalanche rating-are unique to IRF740STRRPBF and must be verified for functional interchangeability.
What is the recommended PCB pad layout for IRF740STRRPBF?
Vishay specifies minimum PCB pads for the D2PAK package: 0.420" × 0.355" (10.67 mm × 9.02 mm) for the main thermal pad, with 0.135" (3.43 mm) solder mask opening and 0.200" (5.08 mm) clearance to adjacent traces. Thermal vias (≥6 × 0.3 mm) under the drain pad are strongly recommended to achieve the 40 °C/W RthJA (PCB mount) rating.
IRF740STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF740STRRPBF FAQ
1.How can I place an order for IRF740STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF740STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF740STRRPBF reliable?
The price and inventory of IRF740STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF740STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF740STRRPBF?
IRF740STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF740STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF740STRRPBF?
For technical support, including IRF740STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740STRRPBF requirements.
6.How does Aetrix verify that IRF740STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF740STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF740STRRPBF?
All IRF740STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF740STRRPBF part is unused and in its original packaging.
Return procedure for IRF740STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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