Infineon Technologies IRF7413ZTRPBFXTMA1

Overview

IRF7413ZTRPBFXTMA1 from Infineon Technologies is a 30V, 13A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a control FET in notebook processor power stages and synchronous rectifier in POL converters for computing and telecom systems, featuring 8.0 mΩ R_DS(on) at V_GS = 10 V, 2.3 Ω gate resistance, and 9.5 nC total gate charge.

For engineers reviewing the IRF7413ZTRPBFXTMA1 datasheet, IRF7413ZTRPBFXTMA1 pinout, IRF7413ZTRPBFXTMA1 application, or IRF7413ZTRPBFXTMA1 equivalent, key selection criteria include low R_DS(on) for conduction loss reduction, ultra-low gate impedance for fast switching in high-frequency DC/DC topologies, avalanche-rated ruggedness for unclamped inductive load handling, and SO-8 thermal performance with R_θJA = 50 °C/W.

Technical Context

This MOSFET operates as a high-side control switch in synchronous buck converters, where its 30V V_DSS, 13A I_D rating at 25°C, and 100% avalanche-tested capability support reliable operation under transient overvoltage and inductive energy recovery. Its gate threshold voltage (1.35–2.25 V) enables compatibility with 3.3 V and 5 V gate drivers.

The device integrates a body diode with 1.0 V forward voltage and 24 ns typical reverse recovery time, enabling efficient freewheeling in synchronous rectification. Its Q_gd/Q_gs1 ratio is minimized to suppress C_dv/dt turn-on during high dV/dt node transitions - critical for shoot-through prevention in 500 kHz–1 MHz POL designs.

Key Specifications

Pinout & Package

IRF7413ZTRPBFXTMA1 is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal conduction. Pin numbering follows standard SO-8 top-view orientation (pin 1 at top-left corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7413PBF, IRF7413ZTRPBFXTMA1 offers MSL1 reliability and tape-and-reel readiness for high-volume SMT lines; versus Si7852DP-T1-GE3, it delivers lower gate charge and guaranteed pinout compatibility but trades off slightly higher Crss - making it preferable for cost-sensitive, high-yield notebook VRM production.

Availability

IRF7413ZTRPBFXTMA1 is available at Aetrix Electronics and suitable for notebook processor VRMs, graphics card POL converters, and telecom baseband power supplies requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for IRF7413ZTRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF7413ZTRPBFXTMA1 has a specified T_J range of –55°C to +150°C. For continuous operation, the absolute maximum steady-state junction temperature is 150°C. Derating is required above 25°C ambient per the linear derating factor of 20 mW/°C beyond 25°C, based on R_θJA = 50 °C/W. Thermal design must ensure peak T_J remains below 150°C under worst-case load and airflow conditions.

Is this MOSFET suitable for 3.3 V gate drive applications?

Yes - the device has a gate threshold voltage range of 1.35–2.25 V and guarantees R_DS(on) ≤ 10.5 mΩ at V_GS = 4.5 V. While not fully enhanced at 3.3 V, it delivers usable on-resistance (~15–18 mΩ) and sufficient transconductance for moderate-current, medium-frequency applications such as always-on bias rails or low-duty-cycle control paths.

Does IRF7413ZTRPBFXTMA1 include integrated ESD protection?

No - this is a discrete power MOSFET without on-die ESD protection circuitry. The gate oxide is rated for ±20 V V_GS, and the device requires external gate protection (e.g., 10 Ω series resistor + 12 V TVS) in environments with handling or system-level ESD risk. Gate damage from static discharge is irreversible and not covered under warranty.

Can this part replace IRF7413ZPbF in existing designs?

Yes - IRF7413ZTRPBFXTMA1 is the tape-and-reel, MSL1-qualified successor to IRF7413ZPbF, sharing identical electrical specifications, SO-8 footprint, pinout, and thermal characteristics. The "XTMA1" suffix denotes Infineon's standard tape-and-reel packaging with moisture-sensitive level 1 compliance, making it directly substitutable in automated SMT production without layout or firmware changes.