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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF744PBF

Name: IRF744PBF
Brand: Vishay Siliconix
SKU: IRF744PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF744PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF744PBF.pdf

Description:: MOSFET N-CH 450V 8.8A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF744PBF from Vishay Siliconix is a 450 V, 8.8 A N-channel power MOSFET in TO-220 package, featuring 0.63 Ω R_DS(on) at V_GS = 10 V, 80 nC total gate charge, and repetitive avalanche rating up to 8.8 A - designed for high-voltage DC-DC converters, motor drives, and snubberless AC switchers.

For engineers reviewing the IRF744PBF datasheet, IRF744PBF pinout, IRF744PBF application, or IRF744PBF equivalent, key selection criteria include its 450 V V_DS, 125 W P_D at T_C = 25 °C, 1.0 °C/W R_thJC, dV/dt capability of 3.5 V/ns, and body diode t_rr of 490–740 ns under specified conditions.

Technical Context

This third-generation planar vertical MOSFET uses ruggedized silicon design with optimized charge distribution to support fast switching (t_d(on) = 8.7 ns, t_f = 27 ns) while maintaining robust unclamped inductive switching performance (E_AS = 540 mJ). Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drive.

The device integrates a low-Q_gd/Q_g ratio (41/80 nC), supporting stable operation under high dV/dt stress (up to 200 V/ns per note c), and features a thermally efficient TO-220 package with 0.50 °C/W R_thCS to heatsink - enabling compact thermal design in industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	450 V - supports 380 VAC rectified bus and 400 V DC input systems without derating
R_DS(on) @ V_GS = 10 V	0.63 Ω - enables ≤ 49 W conduction loss at 8.8 A continuous drain current
Q_g	80 nC - determines gate drive power requirement and switching speed with 9.1 Ω resistor
I_D @ T_C = 25 °C	8.8 A - defines maximum continuous current with adequate heatsinking at ambient case temperature
E_AS	540 mJ - specifies single-pulse avalanche energy handling for inductive load interruption
t_rr (body diode)	490–740 ns - impacts commutation losses and EMI in hard-switched topologies
R_thJC	1.0 °C/W - allows direct junction-to-heatsink thermal path modeling for thermal margin analysis

Pinout & Package

IRF744PBF is housed in a through-hole TO-220AB package with standard 3-pin layout (Drain tab electrically connected to pin 2), rated for 125 W dissipation at T_C = 25 °C and compatible with industry-standard mounting hardware (6-32 or M3 screw, 10 lbf·in torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Source (S)	Reference node for gate drive; carries full load current and connects to power ground plane
Pin 2 (Center)	Gate (G)	High-impedance control terminal requiring <100 nA leakage current compliance at ±20 V
Pin 3 (Right)	Drain (D)	Main power output node; internally bonded to metal tab for low-inductance high-current return path

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 8.8 A I_AR and 13 mJ E_AR without degradation - eliminates need for external clamping in flyback or relay drivers
Dynamic dV/dt rating	Guaranteed 3.5 V/ns peak diode recovery dV/dt - prevents spurious turn-on in high-noise motor control environments
Low Q_gd/Q_g ratio	51% (41/80 nC) - improves Miller immunity and enables stable paralleling with minimal gate resistance mismatch sensitivity
Lead (Pb)-free construction	RoHS-compliant termination (Pb-free plating on leads and solderable surfaces) per exemption 7a
Fast switching	Combined t_d(on) + t_r + t_d(off) + t_f = 121 ns - reduces switching losses in 100–500 kHz SMPS designs

Applications

Industrial Motor Drives	AC-DC Switching Power Supplies
Use Scenario: Half-bridge inverter stage for 1–3 kW brushless DC motor controllers operating from 300–400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element with body diode conducting freewheeling current during dead-time. Use Value: 450 V V_DS provides 20% margin over 380 V rectified line; 540 mJ E_AS absorbs inductive kickback during fault shutdown.	Use Scenario: Primary-side switch in 500 W offline flyback converter with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Main power switch subjected to unclamped inductive energy during each switching cycle. Use Value: Repetitive avalanche rating (I_AR = 8.8 A, E_AR = 13 mJ) enables reliable operation without snubber networks.
Snubberless AC Switching	DC-DC Isolated Converters
Use Scenario: Solid-state relay replacement in HVAC control modules switching 240 VAC resistive loads. IC Role / Device Role / Timing Role: Bidirectional blocking switch leveraging body diode reverse recovery characteristics for zero-crossing detection. Use Value: 3.5 V/ns dV/dt rating prevents false triggering during rapid AC voltage transitions across load terminals.	Use Scenario: Primary switch in 1.2 kW forward converter for telecom rectifier systems. IC Role / Device Role / Timing Role: High-duty-cycle power transistor requiring low R_DS(on) and thermal stability at elevated case temperatures. Use Value: R_DS(on) increases only 3× from 25 °C to 150 °C (per Fig. 4), ensuring predictable conduction loss across operating range.

Industrial Motor Drives

AC-DC Switching Power Supplies

Use Scenario: Half-bridge inverter stage for 1–3 kW brushless DC motor controllers operating from 300–400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element with body diode conducting freewheeling current during dead-time.

Use Value: 450 V V_DS provides 20% margin over 380 V rectified line; 540 mJ E_AS absorbs inductive kickback during fault shutdown.

Use Scenario: Primary-side switch in 500 W offline flyback converter with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Main power switch subjected to unclamped inductive energy during each switching cycle.

Use Value: Repetitive avalanche rating (I_AR = 8.8 A, E_AR = 13 mJ) enables reliable operation without snubber networks.

Snubberless AC Switching

DC-DC Isolated Converters

Use Scenario: Solid-state relay replacement in HVAC control modules switching 240 VAC resistive loads.

IC Role / Device Role / Timing Role: Bidirectional blocking switch leveraging body diode reverse recovery characteristics for zero-crossing detection.

Use Value: 3.5 V/ns dV/dt rating prevents false triggering during rapid AC voltage transitions across load terminals.

Use Scenario: Primary switch in 1.2 kW forward converter for telecom rectifier systems.

IC Role / Device Role / Timing Role: High-duty-cycle power transistor requiring low R_DS(on) and thermal stability at elevated case temperatures.

Use Value: R_DS(on) increases only 3× from 25 °C to 150 °C (per Fig. 4), ensuring predictable conduction loss across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4 A I_D, 1.8 Ω R_DS(on), Zener-protected gate, TO-220FP package	Lower current rating and higher on-resistance; suited for lower-power flybacks where gate protection is critical	Select when enhanced gate oxide protection against transients is required and 4 A continuous current suffices
IXTP4N50D2	500 V V_DS, 4 A I_D, 1.4 Ω R_DS(on), ultra-low Q_g (22 nC), TO-220 package	Half the gate charge but half the current rating; optimized for high-frequency resonant converters	Prefer for >500 kHz LLC or QR flyback designs where switching loss dominates and peak current ≤4 A

Compared with STP4NK50ZFP and IXTP4N50D2, IRF744PBF delivers higher continuous current (8.8 A vs. 4 A) and lower R_DS(on) (0.63 Ω vs. ≥1.4 Ω) at the cost of higher Q_g, making it optimal for medium-frequency, medium-power industrial switching where conduction loss and avalanche robustness are prioritized.

Availability

IRF744PBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC switching power supplies, and snubberless AC switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRF744PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF744PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for demanding industrial power conversion where repetitive avalanche capability, dynamic dV/dt immunity, and thermal efficiency are essential.

FAQ

What is the maximum continuous drain current for IRF744PBF at 100 °C case temperature?

The IRF744PBF supports 5.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and must be applied in thermal design calculations alongside R_thJC = 1.0 °C/W and ambient conditions. The IRF744PBF datasheet confirms this value under steady-state conduction with proper heatsinking.

Does IRF744PBF have built-in gate protection?

No, the IRF744PBF does not integrate gate Zener protection. Its gate-source voltage rating is ±20 V, and gate leakage is specified at ±100 nA at ±20 V - indicating standard oxide gate structure. External gate resistors and clamping diodes are recommended in noisy environments. This characteristic is consistent across the IRF744/SiHF744 product family per Vishay document 91056.

Can IRF744PBF be used in parallel configurations?

Yes, the IRF744PBF is explicitly designed for ease of paralleling, as noted in its FEATURES section. Its positive R_DS(on) temperature coefficient and matched threshold voltage distribution enable current sharing without active balancing. Layout symmetry and individual gate resistors are still required - confirmed by Vishay's application guidance in S-83029-Rev. A.

What is the body diode reverse recovery charge (Q_rr) of IRF744PBF?

The IRF744PBF body diode exhibits Q_rr = 3.2–4.8 µC under test conditions of T_J = 25 °C, I_F = 8.8 A, and dI/dt = 100 A/µs. This parameter directly impacts turn-off losses in synchronous rectification and freewheeling paths. The value is measured and published in the SPECIFICATIONS table on page 2 of the IRF744PBF datasheet (Document Number 91056).

Is IRF744PBF suitable for 240 VAC switching without a snubber network?

Yes - the IRF744PBF's repetitive avalanche rating (I_AR = 8.8 A, E_AR = 13 mJ) and 450 V V_DS provide sufficient margin for 240 VAC (peak ≈ 340 V) resistive or inductive switching. Vishay explicitly cites "snubberless AC switching" as an application in the product summary, validating use in solid-state relays and contactor replacements where voltage overshoot is absorbed internally.

IRF744PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 450 V

Current - Continuous Drain (Id) @ 25°C:: 8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 630mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF744PBF FAQ

1.How can I place an order for IRF744PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF744PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF744PBF reliable?

The price and inventory of IRF744PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF744PBF is usually 5 days.

3.What payment methods are accepted for IRF744PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF744PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF744PBF?

IRF744PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF744PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF744PBF?

For technical support, including IRF744PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF744PBF requirements.

6.How does Aetrix verify that IRF744PBF is sourced from the original manufacturer or authorized distributors?

All IRF744PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF744PBF meets industry standards.

7.What is the process for return or replacement of IRF744PBF?

All IRF744PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF744PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF744PBF part is unused and in its original packaging.

Return procedure for IRF744PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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