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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF7822TRL

Name: IRF7822TRL
Brand: Vishay Siliconix
SKU: IRF7822TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7822TRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7822TRL.pdf

Description:: MOSFET N-CH 30V 18A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7822TRL from Infineon Technologies is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous buck DC-DC converters powering modern microprocessors. It delivers 5.0 mΩ R_DS(on) at V_GS = 4.5 V, 44 nC total gate charge, and 18 A continuous drain current at 25°C - enabling high-efficiency CPU core voltage regulation.

For engineers reviewing the IRF7822TRL datasheet, IRF7822TRL pinout, IRF7822TRL application, or IRF7822TRL equivalent, key selection criteria include low R_DS(on)/Q_G ratio, C_dv/dt-induced turn-on immunity, thermal resistance (R_θJA = 40°C/W), and SO-8 footprint compatibility with high-current PCB layouts.

Technical Context

The IRF7822TRL employs advanced trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_GS1 = 13 nC, Q_GD = 9.0 nC) supports fast, controlled turn-on/turn-off in high-frequency synchronous rectification.

Designed specifically for low-side FET roles in multiphase CPU VRMs, it features enhanced C_dv/dt immunity and a body diode with 1.0 V forward voltage at 15 A, enabling efficient reverse recovery in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rails with margin for transient spikes in CPU core supplies
R_DS(on)	5.0 mΩ @ V_GS = 4.5 V, I_D = 15 A - enables <1 W conduction loss at 15 A in low-side position
Q_G	44 nC @ V_GS = 5.0 V - balances drive strength and switching loss in 300–1000 kHz VRM designs
I_D (cont)	18 A @ T_A = 25°C - sufficient for single-phase 15 A output with derating for board-level thermal limits
R_θJA	40°C/W - requires ≥1 in² copper pour for ≤100°C junction rise under 3.1 W dissipation
V_GS(th)	1.0 V (typ) - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers
Q_rr	120 nC - defines reverse recovery energy burden during dead-time commutation in synchronous buck

Pinout & Package

IRF7822TRL uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for thermal and current handling. The package supports vapor phase, IR, convection, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8 (D)	Drain	Parallel-connected high-current drain terminals; electrically and thermally tied to exposed pad for low-inductance, low-R_DS(on) path
5 (G)	Gate	Single gate input; low 1.5 Ω gate resistance minimizes ringing and simplifies driver design
7–8 (S)	Source	Source terminals tied to internal substrate; used for return path and gate drive reference in low-side configuration

Key Features

Feature	Design Value
Optimized R_DS(on)/Q_G ratio	5.0 mΩ / 44 nC = 114 μΩ·nC - reduces combined conduction + switching loss better than generic 30 V MOSFETs
C_dv/dt-induced turn-on immunity	Validated for synchronous FET operation - prevents false turn-on during high dV/dt transitions in buck high-side switching
Low Q_rr body diode	120 nC reverse recovery charge - lowers commutation loss and EMI vs. standard MOSFETs in hard-switched topologies
SO-8 thermal performance	R_θJL = 20°C/W - enables >3 W power dissipation with proper PCB copper layout and via stitching

Applications

CPU Core Voltage Regulator	GPU Power Delivery
Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.5 V at up to 100 A to Intel/AMD desktop/server CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET, operating at 300–1000 kHz with precise dead-time control. Use Value: 5.0 mΩ R_DS(on) and 44 nC Q_G reduce total power loss by ~15% versus legacy 30 V MOSFETs at 15 A per phase.	Use Scenario: High-current VRM on discrete graphics cards delivering dynamic 0.9–1.2 V to GPU cores under burst load. IC Role / Device Role / Timing Role: Low-side switch in 4–6 phase interleaved buck, requiring fast switching and robust body diode recovery. Use Value: 120 nC Q_rr and 1.0 V V_SD minimize reverse recovery loss and thermal stress during rapid load transients.
ASIC/FPGA Core Supply	High-Density Server VRM
Use Scenario: Point-of-load regulator for FPGA fabric or ASIC logic blocks requiring tight voltage tolerance and fast transient response. IC Role / Device Role / Timing Role: Synchronous rectifier in compact 2–3 phase VRM with space-constrained PCB layout. Use Value: SO-8 footprint enables dense phase layout while R_θJA = 40°C/W allows thermal management using standard 1 oz copper pours.	Use Scenario: Scalable multi-rail VRM in 1U server motherboards supporting dual-socket CPUs and memory buffers. IC Role / Device Role / Timing Role: Standardized low-side FET across multiple VRM phases, leveraging common gate drive and thermal design. Use Value: Pin-compatible SO-8 packaging and documented C_dv/dt immunity simplify BOM consolidation and qualification across server SKUs.

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.5 V at up to 100 A to Intel/AMD desktop/server CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET, operating at 300–1000 kHz with precise dead-time control.

Use Value: 5.0 mΩ R_DS(on) and 44 nC Q_G reduce total power loss by ~15% versus legacy 30 V MOSFETs at 15 A per phase.

Use Scenario: High-current VRM on discrete graphics cards delivering dynamic 0.9–1.2 V to GPU cores under burst load.

IC Role / Device Role / Timing Role: Low-side switch in 4–6 phase interleaved buck, requiring fast switching and robust body diode recovery.

Use Value: 120 nC Q_rr and 1.0 V V_SD minimize reverse recovery loss and thermal stress during rapid load transients.

ASIC/FPGA Core Supply

High-Density Server VRM

Use Scenario: Point-of-load regulator for FPGA fabric or ASIC logic blocks requiring tight voltage tolerance and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier in compact 2–3 phase VRM with space-constrained PCB layout.

Use Value: SO-8 footprint enables dense phase layout while R_θJA = 40°C/W allows thermal management using standard 1 oz copper pours.

Use Scenario: Scalable multi-rail VRM in 1U server motherboards supporting dual-socket CPUs and memory buffers.

IC Role / Device Role / Timing Role: Standardized low-side FET across multiple VRM phases, leveraging common gate drive and thermal design.

Use Value: Pin-compatible SO-8 packaging and documented C_dv/dt immunity simplify BOM consolidation and qualification across server SKUs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRL	R_DS(on) = 3.8 mΩ (lower), Q_G = 52 nC (higher), same SO-8 package	Better conduction loss but higher switching loss; requires stronger gate driver	Prefer when efficiency at light-to-moderate load dominates; verify gate drive capability
SiR872DP-T1-GE3	R_DS(on) = 4.1 mΩ, Q_G = 35 nC, 30 V rating, PowerPAK® SO-8 package	Lower Q_G improves high-frequency efficiency; different thermal pad layout affects PCB rework	Choose for higher-frequency (>1 MHz) VRMs where gate drive loss is critical

Compared with IRF7822TRL, IRF7832TRL trades higher gate charge for lower R_DS(on), favoring steady-state efficiency, while SiR872DP-T1-GE3 offers superior Q_G/R_DS(on) balance and faster switching - both require validation of gate drive strength and PCB thermal design.

Availability

IRF7822TRL is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery, ASIC/FPGA point-of-load supplies, and high-density server VRMs requiring stable component supply and long-term industrial availability.

Supply support for IRF7822TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7822TRL belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for IRF7822TRL at 70°C ambient temperature?

The IRF7822TRL supports 13 A continuous drain current at T_A = 70°C, as specified in its Absolute Maximum Ratings table. This value assumes standard SO-8 mounting on a 1-inch square copper board with adequate airflow. Derating must be applied beyond this temperature based on R_θJA = 40°C/W and maximum T_J = 150°C. Always verify actual board-level thermal performance in final layout before full-power operation of IRF7822TRL.

Does IRF7822TRL support 3.3 V gate drive in synchronous buck applications?

Yes, IRF7822TRL has a gate threshold voltage V_GS(th) of 1.0 V (typical) and is fully characterized down to V_GS = 4.5 V, where it achieves 5.0 mΩ R_DS(on). At 3.3 V gate drive, it remains strongly enhanced and usable - though R_DS(on) increases to ~7–8 mΩ. For optimal efficiency, 4.5–5.0 V gate drive is recommended; IRF7822TRL's low V_GS(th) ensures robust turn-on even with marginal gate drive margins.

What is the body diode forward voltage of IRF7822TRL and how does it affect synchronous rectification?

The IRF7822TRL body diode exhibits a typical forward voltage V_SD of 1.0 V at I_S = 15 A and V_GS = 0 V. In synchronous buck operation, this defines the voltage drop during dead-time conduction, directly impacting conduction loss and heat generation before the low-side FET turns on. Its 120 nC Q_rr also determines reverse recovery energy - both parameters make IRF7822TRL suitable for high-efficiency synchronous rectification when paired with appropriate dead-time tuning.

Can IRF7822TRL be used as a high-side switch in a floating-gate configuration?

No - IRF7822TRL is optimized as a low-side synchronous rectifier FET. Its gate threshold and safe operating area are not rated for high-side bootstrap operation above 30 V. While it can function as a high-side switch in low-voltage (<12 V) floating configurations, its R_DS(on), Q_G, and C_dv/dt immunity are tuned for low-side use in buck converters. For high-side applications, dedicated high-side or complementary dual MOSFETs are recommended instead of IRF7822TRL.

Is IRF7822TRL RoHS-compliant and qualified for industrial temperature range?

Yes, IRF7822TRL is RoHS-compliant and qualified for junction temperatures from –55°C to 150°C. Although originally designed and qualified for the Consumer market per Infineon documentation, its absolute maximum ratings and thermal specifications meet industrial-grade requirements. Customers deploying IRF7822TRL in industrial environments should validate long-term reliability under actual operating conditions, including thermal cycling and humidity exposure, as formal industrial qualification data is not published for this specific variant.

IRF7822TRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7822TRL FAQ

1.How can I place an order for IRF7822TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7822TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7822TRL reliable?

The price and inventory of IRF7822TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7822TRL is usually 5 days.

3.What payment methods are accepted for IRF7822TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7822TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7822TRL?

IRF7822TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7822TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7822TRL?

For technical support, including IRF7822TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7822TRL requirements.

6.How does Aetrix verify that IRF7822TRL is sourced from the original manufacturer or authorized distributors?

All IRF7822TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7822TRL meets industry standards.

7.What is the process for return or replacement of IRF7822TRL?

All IRF7822TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF7822TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7822TRL part is unused and in its original packaging.

Return procedure for IRF7822TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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