Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF7822TRR

Name: IRF7822TRR
Brand: Vishay Siliconix
SKU: IRF7822TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7822TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7822TRR.pdf

Description:: MOSFET N-CH 30V 18A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,100

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7822TRR from Infineon Technologies is an N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous buck DC-DC converters. It delivers 5.0 mΩ R_DS(on) at V_GS = 4.5 V, 44 nC total gate charge, and 30 V V_DS, enabling high-efficiency CPU core power delivery in notebook and server VRMs.

For engineers reviewing the IRF7822TRR datasheet, IRF7822TRR pinout, IRF7822TRR application, or IRF7822TRR equivalent, key selection criteria include low conduction loss (5.0 mΩ), high C_dv/dt immunity for synchronous FET operation, thermal resistance (R_θJA = 40 °C/W), and SO-8 footprint compatibility with standard PCB assembly processes.

Technical Context

The IRF7822TRR employs advanced trench-gate HEXFET technology to minimize both R_DS(on) and Q_G, achieving a balanced trade-off for high-frequency synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.0 V typ.) supports 4.5 V logic-level drive, and its body diode exhibits 1.0 V forward voltage at 15 A.

Designed specifically for low-side switching in synchronous buck topologies, the device features enhanced immunity to C_dv/dt-induced turn-on and reduced Q_oss (27 nC) to limit switching losses during hard commutation events typical in microprocessor VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on)	5.0 mΩ @ V_GS = 4.5 V, I_D = 15 A - Enables <1 W conduction loss at 15 A, critical for thermally constrained VRM layouts
Q_G	44 nC @ V_GS = 5.0 V - Determines gate driver current requirement and switching speed in 300–1000 kHz VRM designs
R_θJA	40 °C/W - Defines thermal derating on standard 1-inch² copper; limits continuous I_D to 13 A at T_A = 70 °C
V_GS(th)	1.0 V typ. - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers without overdrive risk
Q_oss	27 nC @ V_DS = 16 V - Directly impacts turn-off energy loss and EMI in hard-switched synchronous FET operation

Pinout & Package

IRF7822TRR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), optimized for vapor-phase, infrared, convection, and wave soldering. The package supports >3 W power dissipation in typical PCB mount configurations and features exposed drain pads for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled drain terminals - provide low-inductance, high-current path to output rail and thermal pad
5	Gate (G)	Single gate input - requires low-impedance drive to control 15 A load with minimal Q_G-related delay
6	Source (S)	Common source node - serves as return path for load current and reference for gate drive in low-side configuration

Key Features

Feature	Design Value
Optimized for synchronous buck FETs	High C_dv/dt immunity prevents false turn-on during high dV/dt transitions across high-side switch
Low R_DS(on) + low Q_G balance	Reduces combined conduction and switching losses in 500 kHz–1 MHz VRMs powering modern CPUs
Body diode with low Q_rr	120 nC reverse recovery charge minimizes shoot-through risk and associated power loss in synchronous rectification
SO-8 footprint with thermal pad	Enables drop-in replacement in existing VRM layouts while supporting >3 W dissipation via PCB copper area

Applications

Notebook CPU Core VRM	Server Memory Regulator
Use Scenario: High-current, fast-transient power delivery to dual-core and quad-core mobile processors under dynamic workload. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2-phase interleaved buck converter operating at 500–800 kHz. Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by ~35% vs. legacy 7.5 mΩ devices, improving full-load efficiency by 1.2–1.8%.	Use Scenario: Point-of-load regulation for DDR4/DDR5 memory modules requiring tight voltage tolerance and rapid load-step response. IC Role / Device Role / Timing Role: Synchronous FET in single-phase buck stage delivering up to 30 A at 1.2 V with <10 µs transient recovery. Use Value: Low Q_oss (27 nC) and high C_dv/dt immunity ensure stable switching during memory burst cycles without false turn-on.
Embedded GPU Power Stage	Industrial FPGA Core Supply
Use Scenario: Compact, fanless graphics subsystems in edge AI inference platforms requiring silent, high-density power conversion. IC Role / Device Role / Timing Role: Low-side switch in 3-phase multiphase buck supplying 0.8–1.1 V to integrated GPU cores. Use Value: SO-8 thermal performance (R_θJA = 40 °C/W) allows 13 A continuous current on 2-layer PCBs without heatsinks.	Use Scenario: Reliable core voltage supply for Xilinx or Intel FPGAs in programmable logic controllers and test equipment. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated or non-isolated buck converter with 100% duty-cycle capability for deep-sleep modes. Use Value: 1.0 V V_GS(th) ensures robust turn-on with industrial-grade 3.3 V GPIOs, eliminating need for level-shifting circuitry.

Notebook CPU Core VRM

Server Memory Regulator

Use Scenario: High-current, fast-transient power delivery to dual-core and quad-core mobile processors under dynamic workload.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2-phase interleaved buck converter operating at 500–800 kHz.

Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by ~35% vs. legacy 7.5 mΩ devices, improving full-load efficiency by 1.2–1.8%.

Use Scenario: Point-of-load regulation for DDR4/DDR5 memory modules requiring tight voltage tolerance and rapid load-step response.

IC Role / Device Role / Timing Role: Synchronous FET in single-phase buck stage delivering up to 30 A at 1.2 V with <10 µs transient recovery.

Use Value: Low Q_oss (27 nC) and high C_dv/dt immunity ensure stable switching during memory burst cycles without false turn-on.

Embedded GPU Power Stage

Industrial FPGA Core Supply

Use Scenario: Compact, fanless graphics subsystems in edge AI inference platforms requiring silent, high-density power conversion.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase multiphase buck supplying 0.8–1.1 V to integrated GPU cores.

Use Value: SO-8 thermal performance (R_θJA = 40 °C/W) allows 13 A continuous current on 2-layer PCBs without heatsinks.

Use Scenario: Reliable core voltage supply for Xilinx or Intel FPGAs in programmable logic controllers and test equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated or non-isolated buck converter with 100% duty-cycle capability for deep-sleep modes.

Use Value: 1.0 V V_GS(th) ensures robust turn-on with industrial-grade 3.3 V GPIOs, eliminating need for level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 4.0 mΩ @ 4.5 V, higher Q_G (52 nC), same SO-8 package	Better conduction loss but slower switching; suited for lower-frequency (<400 kHz) VRMs where thermal headroom exists	Prefer IRF7832TRPBF when peak efficiency at light-to-moderate loads outweighs switching loss penalty
SiR872DP-T1-GE3	R_DS(on) = 4.8 mΩ @ 4.5 V, Q_G = 39 nC, same SO-8, Vishay Gen 3 TrenchFET	Lower gate charge improves high-frequency efficiency; slightly lower V_DS rating (25 V) limits use to ≤19 V input rails	Select SiR872DP-T1-GE3 for 12 V input VRMs prioritizing 1 MHz+ operation and tighter layout constraints

Compared with IRF7822TRR, IRF7832TRPBF trades higher gate charge for lower R_DS(on), favoring thermally limited but lower-frequency designs, while SiR872DP-T1-GE3 offers faster switching at marginally reduced voltage rating-making IRF7822TRR the optimal balance for 24 V-input, 500–800 kHz CPU VRMs.

Availability

IRF7822TRR is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, and embedded GPU power stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRF7822TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The IRF7822TRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for IRF7822TRR at 70°C ambient temperature?

The IRF7822TRR supports 13 A continuous drain current at T_A = 70°C, as specified in its Absolute Maximum Ratings table. This value assumes standard SO-8 mounting on a 1-inch² copper board and accounts for thermal derating due to R_θJA = 40 °C/W. At 25°C ambient, the rating increases to 18 A, but system-level thermal design must verify junction temperature remains below 150°C under worst-case load and airflow conditions for IRF7822TRR.

Does IRF7822TRR support 3.3 V gate drive in synchronous buck applications?

Yes, IRF7822TRR is fully compatible with 3.3 V gate drive due to its low 1.0 V typical gate threshold voltage (V_GS(th)) and guaranteed R_DS(on) of 6.5 mΩ max at V_GS = 4.5 V. While optimal R_DS(on) (5.0 mΩ) is specified at 4.5 V, the device remains strongly enhanced at 3.3 V, delivering usable on-resistance and safe switching margins in space-constrained VRMs where 5 V gate bias is unavailable. IRF7822TRR has been validated in such configurations per Infineon application note AN-1001.

What is the purpose of the multiple drain pins (pins 1, 2, 3, 4, 7, 8) on IRF7822TRR?

The six paralleled drain pins on IRF7822TRR reduce package inductance and thermal resistance by distributing high-frequency, high-current paths across multiple bond wires and leads. This configuration lowers effective R_DS(on) contribution from leadframe resistance and minimizes voltage spikes during fast dI/dt transitions-critical for stability in multi-phase CPU VRMs. Each drain pin connects directly to the internal die's drain metallization and the exposed thermal pad, making IRF7822TRR's SO-8 layout inherently optimized for both electrical and thermal performance.

How does the body diode performance of IRF7822TRR impact synchronous rectification?

The IRF7822TRR body diode exhibits 1.0 V forward voltage at 15 A and 120 nC reverse recovery charge (Q_rr), enabling predictable freewheeling behavior during dead-time intervals. Its low Q_rr reduces energy loss and EMI during diode conduction, while the well-controlled reverse recovery minimizes cross-conduction risk in synchronous buck topologies. These characteristics make IRF7822TRR suitable as either high-side or low-side switch, though it is optimized as the low-side FET where body diode conduction is most frequent and impactful.

Is IRF7822TRR qualified for automotive applications?

No, IRF7822TRR is explicitly qualified for the Consumer market per its datasheet revision notes and is not AEC-Q101 qualified. It lacks automotive-specific stress testing, extended temperature screening, and failure analysis reporting required for under-hood or safety-critical systems. For automotive DC-DC converters, Infineon recommends AEC-Q101-qualified alternatives such as the IPB120N04S4L-H0, which shares similar R_DS(on) and SO-8 packaging but meets full automotive reliability standards. IRF7822TRR remains appropriate for industrial, computing, and telecom applications.

IRF7822TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7822TRR FAQ

1.How can I place an order for IRF7822TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7822TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7822TRR reliable?

The price and inventory of IRF7822TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7822TRR is usually 5 days.

3.What payment methods are accepted for IRF7822TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7822TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7822TRR?

IRF7822TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7822TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7822TRR?

For technical support, including IRF7822TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7822TRR requirements.

6.How does Aetrix verify that IRF7822TRR is sourced from the original manufacturer or authorized distributors?

All IRF7822TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7822TRR meets industry standards.

7.What is the process for return or replacement of IRF7822TRR?

All IRF7822TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7822TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7822TRR part is unused and in its original packaging.

Return procedure for IRF7822TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …