Infineon Technologies IRF8113TRPBF

Overview

IRF8113TRPBF from Infineon Technologies is a 30V, 17.2A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and control FET in notebook CPU power stages. It delivers 4.7 mΩ R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 100% RG-tested for low-noise switching in high-frequency (>500 kHz) point-of-load applications.

For engineers reviewing the IRF8113TRPBF datasheet, IRF8113TRPBF pinout, IRF8113TRPBF application, or IRF8113TRPBF equivalent, key selection criteria include its 5.6 mΩ max R_DS(on) at 4.5 V V_GS, 13.3 A continuous drain current at 70°C, 10 nC Q_sw, body diode t_rr of 34–51 ns, and SO-8 thermal resistance (R_θJA = 50°C/W).

Technical Context

This device is engineered for synchronous rectification in isolated forward/flyback topologies and as the low-side control FET in multiphase buck converters. Its low Q_gd/Q_gs1 ratio minimizes C_dv/dt-induced turn-on risk at the switching node, and its fully characterized avalanche rating (E_AS = 48 mJ) supports robust unclamped inductive switching.

The SO-8 package enables dual-side cooling via exposed drain pads, and its 1.6 Ω typical gate resistance (R_G) ensures stable gate drive timing with standard PWM controllers. The body diode exhibits V_SD ≤ 1.0 V at 13.3 A and Q_rr = 21–32 nC - critical for minimizing cross-conduction losses in synchronous operation.

Key Specifications

Pinout & Package

IRF8113TRPBF uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Drain terminals are internally paralleled across pins 1–4 and 6–8; source connects to pins 5 and 7; gate occupies pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8113TRPBF offers optimal balance of low Q_g (24 nC), moderate R_DS(on) (4.7 mΩ), and SO-8 compatibility - making it ideal for space-constrained, high-frequency synchronous rectifier designs where gate drive capability and layout simplicity are prioritized over absolute lowest conduction loss.

Availability

IRF8113TRPBF is available at Aetrix Electronics and suitable for server VRM power stages, notebook CPU core supplies, isolated telecom DC-DC converters, and industrial PoE PSE controllers requiring stable component supply and long-term manufacturability.

Supply support for IRF8113TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF8113TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency DC-DC conversion in computing, networking, and industrial power systems where low gate charge and tightly specified R_DS(on) are critical.

FAQ

What is the maximum continuous drain current for IRF8113TRPBF at 70°C ambient?

The maximum continuous drain current is 13.3 A at T_A = 70°C with SO-8 mounted on a standard 1-inch² FR4 board with 2 oz copper. This rating assumes no forced airflow and accounts for R_θJA = 50°C/W and T_J(max) = 150°C. Derating is required above 70°C ambient per the linear derating factor of 0.02 W/°C.

Does IRF8113TRPBF have an integrated body diode, and what are its key parameters?

Yes, it features an integral reverse p-n junction body diode rated for 3.1 A continuous source current and 135 A pulsed current. Key parameters include V_SD ≤ 1.0 V at 13.3 A, reverse recovery time t_rr = 34–51 ns, and Q_rr = 21–32 nC at T_J = 25°C and di/dt = 100 A/µs - all fully characterized and tested per datasheet conditions.

Can IRF8113TRPBF be used as a high-side switch with 5 V gate drive?

No - its gate threshold voltage V_GS(th) ranges from 1.5 V to 2.2 V, but R_DS(on) is only guaranteed at V_GS ≥ 4.5 V. At 5 V, R_DS(on) rises to ~6.8 mΩ (max), increasing conduction loss by >20%. For reliable high-side operation, use ≥10 V gate drive or select a logic-level MOSFET with R_DS(on) specified at 4.5 V.

Is IRF8113TRPBF suitable for avalanche-rated applications like active clamping?

Yes - it is 100% tested for single-pulse avalanche energy (E_AS = 48 mJ at T_J = 25°C) and avalanche current (I_AR = 13.3 A). However, repetitive avalanche operation is not characterized or guaranteed; use only in circuits where energy per event remains within the single-pulse limit and junction temperature stays below 150°C.