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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820

Name: IRF820
Brand: Vishay Siliconix
SKU: IRF820
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF820.pdf

Description:: MOSFET N-CH 500V 2.5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF820 from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in TO-220AB package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and repetitive avalanche rating up to 2.5 A - designed for flyback and SMPS primary-side switching in offline AC/DC adapters.

For engineers reviewing the IRF820 datasheet, IRF820 pinout, IRF820 application, or IRF820 equivalent, key selection criteria include its 500 V blocking capability, 2.5 A continuous drain current at 100 °C case temperature, TO-220AB thermal resistance (R_thJC = 2.5 °C/W), and unclamped inductive switching robustness (E_AS = 210 mJ).

Technical Context

The IRF820 employs a third-generation planar vertical DMOS structure optimized for high-voltage switching with low gate charge (Q_g = 24 nC) and fast turn-on/turn-off times (t_d(on) = 8 ns, t_f = 16 ns). Its body diode exhibits t_rr = 260–520 ns and Q_rr = 0.7–1.4 nC under specified conditions.

Thermal design centers on junction-to-case conduction (R_thJC = 2.5 °C/W max) and linear derating (0.40 W/°C above 25 °C), enabling stable operation up to T_J = 150 °C. The device is rated for peak diode recovery dV/dt of 3.5 V/ns and supports parallel operation due to positive R_DS(on) temperature coefficient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input (85–265 V_AC) offline converters without snubber stress
R_DS(on)	3.0 Ω @ V_GS = 10 V - sets conduction loss floor at 2.5 A; enables <1.9 W I²R loss at full load
Q_g	24 nC - determines gate drive power requirement and switching speed in hard-switched topologies
I_D (cont.)	2.5 A @ T_C = 25 °C - defines maximum continuous output power in thermally constrained TO-220AB packages
E_AS	210 mJ - quantifies single-pulse avalanche energy handling during transformer reset or fault events
t_r/t_f	8.6 ns / 16 ns - enables >100 kHz switching while limiting switching loss and EMI generation
V_GS(th)	2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard 10 V gate drivers, not logic-level compatible

Pinout & Package

IRF820 is housed in TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical compatibility with industry-standard heatsinks using M3/6-32 screws (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤ ±20 V rating and 24 nC charge for full enhancement
D (Drain)	High-side power terminal	Connected to transformer primary or bus rail; electrically tied to metal tab for direct heatsink mounting and thermal path
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; forms body diode anode with drain cathode

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.5 A I_AR and 5.0 mJ E_AR under pulsed conditions - enables rugged operation in inductive load switching without external clamping
Dynamic dV/dt rating	3.5 V/ns peak diode recovery dV/dt - prevents false turn-on during high-speed voltage transients across drain-source
Fast switching	8 ns turn-on delay + 16 ns fall time - reduces transition losses in 50–200 kHz SMPS designs
Low R_DS(on) temperature coefficient	Positive coefficient ensures current sharing stability when paralleling multiple IRF820 devices in high-current applications
TO-220AB package	Industry-standard outline with isolated drain tab - allows direct heatsinking and simplifies mechanical integration into legacy power supply layouts

Applications

Offline AC/DC Adapters	LED Driver Power Stages
Use Scenario: 12–24 W universal-input flyback converter powering consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling. Use Value: 500 V V_DS withstands reflected output voltage plus leakage spike; 210 mJ E_AS absorbs reset energy without snubber.	Use Scenario: Constant-current LED driver for commercial lighting with 30–60 V output. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback regulating LED string current. Use Value: 24 nC Q_g enables efficient 65–100 kHz operation; TO-220AB facilitates thermal management in enclosed fixtures.
Industrial Control Power Supplies	UPS DC-DC Stage
Use Scenario: 15–30 W auxiliary power supply for PLC I/O modules operating at 85–305 V_AC. IC Role / Device Role / Timing Role: Main switching element in isolated forward or flyback topology delivering 5/12/24 V rails. Use Value: -55 to +150 °C T_J range ensures reliability in harsh environments; 2.5 Ω R_DS(on) limits conduction loss at partial load.	Use Scenario: Bidirectional DC-DC stage in line-interactive UPS converting 360–400 V DC bus to 12/24 V battery charging. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration managing battery charge/discharge paths. Use Value: Repetitive avalanche rating (2.5 A I_AR) protects against inductive kickback during battery disconnect transients.

Offline AC/DC Adapters

LED Driver Power Stages

Use Scenario: 12–24 W universal-input flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling.

Use Value: 500 V V_DS withstands reflected output voltage plus leakage spike; 210 mJ E_AS absorbs reset energy without snubber.

Use Scenario: Constant-current LED driver for commercial lighting with 30–60 V output.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback regulating LED string current.

Use Value: 24 nC Q_g enables efficient 65–100 kHz operation; TO-220AB facilitates thermal management in enclosed fixtures.

Industrial Control Power Supplies

UPS DC-DC Stage

Use Scenario: 15–30 W auxiliary power supply for PLC I/O modules operating at 85–305 V_AC.

IC Role / Device Role / Timing Role: Main switching element in isolated forward or flyback topology delivering 5/12/24 V rails.

Use Value: -55 to +150 °C T_J range ensures reliability in harsh environments; 2.5 Ω R_DS(on) limits conduction loss at partial load.

Use Scenario: Bidirectional DC-DC stage in line-interactive UPS converting 360–400 V DC bus to 12/24 V battery charging.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration managing battery charge/discharge paths.

Use Value: Repetitive avalanche rating (2.5 A I_AR) protects against inductive kickback during battery disconnect transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 4.5 A, R_DS(on) = 1.4 Ω @ 10 V, Q_g = 22 nC, TO-220FP (full-pack)	Higher current rating and lower R_DS(on), but TO-220FP has non-isolated tab requiring insulating washer	Select when higher continuous current (4.5 A) and lower conduction loss are prioritized over thermal interface simplicity
FQP5N50C	500 V, 4.5 A, R_DS(on) = 1.4 Ω @ 10 V, Q_g = 25 nC, TO-220	Same isolation as IRF820 (isolated tab), but higher ID and lower R_DS(on); no specified avalanche rating	Select when TO-220 isolation and higher current capability are needed, and avalanche robustness is not required

Compared with STP5NB50FP and FQP5N50C, the IRF820 offers verified repetitive avalanche capability (2.5 A I_AR) and TO-220AB's fully isolated drain tab - making it preferred for cost-sensitive, thermally constrained offline SMPS where fault resilience and mechanical simplicity outweigh raw current density.

Availability

IRF820 is available at Aetrix Electronics and suitable for offline AC/DC adapters, industrial control power supplies, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF820 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF820 belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for cost-effective, rugged switching in offline power conversion - emphasizing avalanche robustness, thermal efficiency, and ease of parallel operation.

FAQ

What is the maximum continuous drain current for IRF820 at 100 °C case temperature?

The IRF820 specifies a continuous drain current (I_D) of 1.6 A at T_C = 100 °C, derived from its 2.5 A rating at 25 °C and linear derating factor of 0.40 W/°C. This value reflects thermal limits of the TO-220AB package under real-world heatsink conditions and must be validated with actual board layout and airflow.

Does IRF820 have a fully isolated drain tab in its TO-220AB package?

Yes, the IRF820 uses the TO-220AB package variant with electrically isolated drain tab, allowing direct mounting to a grounded heatsink without insulation hardware. This differs from TO-220FP (full-pack) variants where the tab is internally connected to the drain and requires isolation.

Is IRF820 suitable for logic-level gate drive applications?

No, the IRF820 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive for full enhancement (R_DS(on) = 3.0 Ω). It is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.

What is the body diode reverse recovery charge (Q_rr) of IRF820?

The IRF820 body diode exhibits Q_rr = 0.7–1.4 nC under test conditions of T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in synchronous rectification or freewheeling configurations where the intrinsic diode conducts.

Can IRF820 be used in parallel configurations?

Yes, the IRF820 supports paralleling due to its positive R_DS(on) temperature coefficient and low gate charge (24 nC), which promote current sharing and reduce gate drive complexity. Layout symmetry, matched gate resistors, and shared heatsinking are required to ensure balanced thermal and electrical performance across parallel IRF820 units.

IRF820 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF820 FAQ

1.How can I place an order for IRF820 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820 reliable?

The price and inventory of IRF820 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820 is usually 5 days.

3.What payment methods are accepted for IRF820?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820?

IRF820 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820?

For technical support, including IRF820 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820 requirements.

6.How does Aetrix verify that IRF820 is sourced from the original manufacturer or authorized distributors?

All IRF820 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820 meets industry standards.

7.What is the process for return or replacement of IRF820?

All IRF820 units undergo pre-shipment inspection (PSI). If there is an issue with IRF820, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820 part is unused and in its original packaging.

Return procedure for IRF820:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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