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Vishay Siliconix IRF820ALPBF
- Part No.:
- IRF820ALPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF820ALPBF.pdf
- Description:
- MOSFET N-CH 500V 2.5A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,210
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Product details
Overview
IRF820ALPBF from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.
For engineers reviewing the IRF820ALPBF datasheet, IRF820ALPBF pinout, IRF820ALPBF application, or IRF820ALPBF equivalent, this page delivers verified electrical ratings, thermal performance data, body diode recovery characteristics, and direct-fit alternatives for industrial power conversion designs.
Technical Context
This MOSFET employs planar vertical DMOS technology with fully characterized dynamic parameters including Ciss = 340 pF, Coss = 53 pF, and Crss = 2.7 pF at VDS = 25 V, enabling precise snubber and gate drive design in hard-switched topologies.
Its 2.5 °C/W junction-to-case thermal resistance and 62 °C/W junction-to-ambient rating (PCB mounted) support thermally constrained layouts; avalanche ruggedness is validated to 2.5 A repetitive IAR and 5.0 mJ EAR, confirming robustness under unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus operation with 25 % margin for voltage transients in offline converters |
| RDS(on) max | 3.0 Ω at VGS = 10 V - determines conduction loss of ≤18.75 W at 2.5 A continuous drain current |
| Qg max | 17 nC - defines gate driver current requirement of ≥0.85 A for 20 ns turn-on with 20 Ω gate resistor |
| EAS | 140 mJ - enables reliable operation in flyback and forward converters without external clamping under worst-case inductive fault |
| ID cont. | 2.5 A at TC = 25 °C - sets maximum continuous output power capability with heatsink derating |
| tr/tf | 12 ns / 13 ns - supports switching frequencies up to 500 kHz with minimal overlap loss in hard-switched bridges |
| VSD | 1.6 V at IS = 2.5 A - quantifies body diode forward drop during synchronous rectification or freewheeling |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring; 3-pin configuration optimized for high-current PCB layout and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive to fully enhance channel; Qgs = 4.3 nC ensures fast turn-on with low driver stress |
| D (Drain) | High-side power terminal | Connected to HV DC bus; electrically tied to exposed copper pad for thermal dissipation and low-inductance return path |
| S (Source) | Reference and current return | Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge (Qrr = 760–1140 nC) |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 17 nC) | Reduces gate driver power loss and simplifies selection of low-cost, low-current drivers in cost-sensitive SMPS |
| Characterized Coss eff. = 28 pF | Enables accurate calculation of turn-off energy loss and resonant timing in LLC and ZVS circuits |
| Avalanche-rated (EAS = 140 mJ) | Eliminates need for external RCD clamp in two-transistor forward and flyback converters operating near breakdown limits |
| Body diode trr = 330–500 ns | Supports moderate-frequency freewheeling with predictable reverse recovery behavior and minimal voltage overshoot |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements for industrial and telecom equipment with extended lifecycle planning |
Applications
| Offline AC-DC Adapters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 100–240 V AC input rectified to 400 V DC bus feeding a half-bridge inverter stage. IC Role / Device Role / Timing Role: High-side switch in primary-side power conversion; handles 50–100 kHz switching with controlled dV/dt. Use Value: 500 V VDS rating and 140 mJ EAS ensure safe operation during line surges and transformer saturation events. |
Use Scenario: Battery-backed DC-AC inverter converting 36–72 V battery stack to 120/230 V AC output via full-bridge topology. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge output stage; conducts bidirectional current during PWM modulation. Use Value: 2.5 A continuous rating and 1.6 V body diode drop minimize conduction loss during dead-time freewheeling. |
| Industrial Motor Drives | LED Streetlight Power Supplies |
Use Scenario: 3-phase inverter stage driving PMSM motors in HVAC blowers or conveyor systems with 24 V control interface. IC Role / Device Role / Timing Role: Phase-leg switch subjected to repetitive avalanche stress during motor stall or short-circuit conditions. Use Value: 5.0 mJ repetitive avalanche energy (EAR) and 2.5 A IAR provide intrinsic fault tolerance without added protection circuitry. |
Use Scenario: Constant-current LED driver using two-transistor forward topology for outdoor lighting with 1000+ hour MTBF requirement. IC Role / Device Role / Timing Role: Primary-side main switch managing 60–100 kHz switching with tight thermal constraints on metal-core PCB. Use Value: 2.5 °C/W RthJC enables direct mounting to heatsink, maintaining TJ < 125 °C at full load without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.4 A, RDS(on) = 1.4 Ω, Qg = 19 nC, TO-220FP package | Higher current rating but larger footprint and higher conduction loss at <1.5 A; lacks specified avalanche energy | Prefer when board space allows TO-220FP and peak current exceeds 2.5 A; verify avalanche margin independently |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, Qg = 75 nC, TO-220 package | Lower voltage rating unsuitable for 400 V bus; much higher gate charge increases driver complexity | Not suitable as direct replacement; only consider for low-voltage (<150 V) high-current applications where IRF820ALPBF is over-specified |
Compared with STP5NK50ZFP and IXTP50N10P, IRF820ALPBF offers optimal balance of 500 V rating, 2.5 A current capability, and 17 nC gate charge in surface-mount D2PAK - making it uniquely suited for compact, thermally demanding offline SMPS where avalanche robustness and PCB area are critical.
Availability
IRF820ALPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply across multi-year production cycles.
Supply support for IRF820ALPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF820ALPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for ruggedness and consistency in offline AC-DC conversion, with emphasis on avalanche energy, dynamic dV/dt immunity, and thermal stability.
FAQ
What is the maximum continuous drain current for IRF820ALPBF at 100 °C case temperature?
The IRF820ALPBF supports 1.6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when heatsinking is insufficient to maintain TC ≤ 25 °C. Designers should use the linear derating factor of 0.4 W/°C beyond 25 °C to calculate safe operating power limits for IRF820ALPBF in real-world thermal environments.
Does IRF820ALPBF have a specified body diode reverse recovery time (trr)?
Yes, IRF820ALPBF specifies trr = 330–500 ns at TJ = 25 °C, IF = 2.5 A, and dI/dt = 100 A/μs. This parameter is measured under controlled conditions and directly impacts voltage overshoot and switching loss during freewheeling in bridge configurations. The body diode also exhibits Qrr = 760–1140 nC, which must be accounted for in gate driver sizing and EMI filtering for IRF820ALPBF-based designs.
Is IRF820ALPBF RoHS-compliant and halogen-free?
Yes, IRF820ALPBF is both RoHS-compliant and halogen-free, as confirmed in the Vishay datasheet revision D (30-Aug-2021) and material categorization document 99912. The "PbF" suffix denotes lead-free termination, and the device meets JEDEC J-STD-609A Class 1 marking requirements. This compliance supports export to EU, China, and other regulated markets where hazardous substance restrictions apply to IRF820ALPBF shipments.
What is the gate threshold voltage range for IRF820ALPBF?
The gate threshold voltage VGS(th) for IRF820ALPBF is specified from 2.0 V to 4.5 V at VDS = VGS and ID = 250 μA. This range indicates the minimum gate voltage required to begin channel conduction, and designers must ensure gate drive exceeds 4.5 V to guarantee full enhancement across process and temperature variations. Logic-level compatibility is not guaranteed - IRF820ALPBF requires ≥10 V for specified RDS(on) performance.
Can IRF820ALPBF be used in synchronous rectification applications?
No, IRF820ALPBF is not optimized for synchronous rectification due to its relatively high RDS(on) (3.0 Ω) and slow body diode recovery (trr = 330–500 ns). Its design prioritizes high-voltage blocking and avalanche ruggedness over low-conduction-loss freewheeling. For synchronous rectification, devices with sub-100 mΩ RDS(on), fast trr < 50 ns, and dedicated Schottky-like body diodes - such as Vishay SiR626DP - are preferred over IRF820ALPBF.
IRF820ALPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF820ALPBF FAQ
1.How can I place an order for IRF820ALPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF820ALPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF820ALPBF reliable?
The price and inventory of IRF820ALPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820ALPBF is usually 5 days.
3.What payment methods are accepted for IRF820ALPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820ALPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF820ALPBF?
IRF820ALPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF820ALPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF820ALPBF?
For technical support, including IRF820ALPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820ALPBF requirements.
6.How does Aetrix verify that IRF820ALPBF is sourced from the original manufacturer or authorized distributors?
All IRF820ALPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820ALPBF meets industry standards.
7.What is the process for return or replacement of IRF820ALPBF?
All IRF820ALPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF820ALPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF820ALPBF part is unused and in its original packaging.
Return procedure for IRF820ALPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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