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Vishay Siliconix IRF820APBF-BE3
- Part No.:
- IRF820APBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF820APBF-BE3.pdf
- Description:
- MOSFET N-CH 500V 2.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:714
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Product details
Overview
IRF820APBF-BE3 from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in TO-220AB package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS and UPS systems.
For engineers reviewing the IRF820APBF-BE3 datasheet, IRF820APBF-BE3 pinout, IRF820APBF-BE3 application, or IRF820APBF-BE3 equivalent, key selection criteria include its 500 V VDS, robust dV/dt ruggedness (3.4 V/ns), body diode recovery performance (trr = 330–500 ns), and thermal resistance (RthJC = 2.5 °C/W) for reliable conduction in high-temperature power stages.
Technical Context
The IRF820APBF-BE3 employs a planar vertical DMOS structure optimized for high-voltage hard-switching topologies. Its gate charge profile (Qgs = 4.3 nC, Qgd = 8.5 nC) supports predictable turn-on/turn-off timing with moderate gate drive strength, while its fully characterized Coss (15 pF at 400 V) enables accurate snubber design in flyback and forward converters.
It integrates a monolithic body diode with specified reverse recovery parameters (Qrr = 760–1140 nC, trr = 330–500 ns) and peak diode recovery dV/dt rating of 3.4 V/ns-critical for minimizing voltage overshoot during inductive turn-off in half-bridge and full-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains rectified voltage in universal-input offline SMPS without derating. |
| RDS(on) | 3.0 Ω @ VGS = 10 V - Enables low conduction loss at 2.5 A continuous drain current (TC = 25 °C). |
| Qg | 17 nC - Requires modest gate driver capability; compatible with standard 1-A peak drivers. |
| EAS | 140 mJ - Supports unclamped inductive switching events without failure in transformer-coupled topologies. |
| trr | 330–500 ns - Predictable body diode recovery behavior under 100 A/μs dI/dt, reducing switching noise. |
| RthJC | 2.5 °C/W - Allows 50 W power dissipation with ≤125 °C junction rise above 25 °C case temperature. |
| VGS(th) | 2.0–4.5 V - Ensures reliable enhancement-mode turn-on with standard 10 V gate drive, avoiding partial conduction. |
Pinout & Package
IRF820APBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 50 W at TC = 25 °C and featuring a maximum mounting torque of 1.1 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires < ±30 V absolute rating. |
| D (Drain) | High-side power terminal | Connected to internal die substrate and metal tab; electrically tied to drain; must be insulated from heatsink unless referenced to same potential. |
| S (Source) | Reference and return path | Serves as common reference for gate drive and load return; carries full switched current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (17 nC) | Reduces gate drive power and simplifies driver selection-no need for high-current gate buffers in 100 kHz-class SMPS. |
| Fully characterized Coss and Coss eff. | Enables precise calculation of turn-off losses and snubber sizing across operating voltage range (1–400 V). |
| Specified avalanche energy (EAS = 140 mJ) | Permits safe operation in unclamped inductive switching without external clamping circuits in forward converter reset phases. |
| Peak dV/dt ruggedness (3.4 V/ns) | Prevents spurious turn-on during fast voltage transients in high-frequency bridge legs, improving system reliability. |
| RoHS-compliant, halogen-free (BE3 suffix) | Meets IPC-1752A material declaration requirements and eliminates brominated flame retardants in PCB assembly. |
Applications
| Offline AC-DC Power Supply | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: Primary-side switch in 100–300 W universal-input flyback or two-transistor forward converter. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified mains to transformer primary. Use Value: 500 V VDS withstands 375 V DC bus with margin; 140 mJ EAS absorbs leakage inductance spikes during demagnetization. |
Use Scenario: Inverter stage switch in line-interactive UPS delivering clean 230 V AC output during grid outage. IC Role / Device Role / Timing Role: Half-bridge leg switch synchronously commutating battery-derived DC into sinusoidal AC via PWM modulation. Use Value: 3.4 V/ns dV/dt rating prevents false triggering during rapid bus transitions; 2.5 A ID supports typical 2 kVA output with parallel devices. |
| Industrial Motor Drive Front-End | High-Speed DC-DC Converter |
|
Use Scenario: Input rectifier/switch in 400 V DC link pre-regulator for servo amplifier power stage. IC Role / Device Role / Timing Role: Active clamp or auxiliary switch managing inrush and regenerative energy during startup and braking. Use Value: Body diode trr = 330–500 ns ensures clean commutation with minimal voltage overshoot when paired with fast freewheeling diodes. |
Use Scenario: Primary switch in 500 kHz resonant LLC converter for telecom rectifier module. IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant power transistor operating at fixed frequency with zero-voltage switching assist. Use Value: Low Qgd/Qg ratio (8.5/17 = 50%) improves controllability during transition; Coss = 15 pF at 400 V minimizes capacitive turn-on loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NB50FP | 500 V, 4.4 Ω RDS(on), 12 nC Qg, TO-220FP (full-pack) package with insulated tab. | Higher RDS(on) increases conduction loss at >1.5 A; lower Qg eases gate drive but reduces dV/dt immunity. | Preferred where space-constrained layouts require smaller footprint or lower gate drive power is critical. |
| FQP5N50C | 500 V, 4.5 Ω RDS(on), 22 nC Qg, TO-220 package with non-isolated tab. | Higher Qg demands stronger gate driver; non-isolated tab requires heatsink insulation; no specified EAS. | Selected when cost sensitivity outweighs avalanche robustness and thermal isolation requirements. |
Compared with STP5NB50FP and FQP5N50C, the IRF820APBF-BE3 offers superior avalanche ruggedness (140 mJ vs. unspecified or lower), lower RDS(on), and guaranteed dV/dt immunity-making it more suitable for demanding offline SMPS and UPS designs where reliability under transient stress is essential.
Availability
IRF820APBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC power supplies, uninterruptible power systems, and industrial motor drive front-ends requiring stable component supply and long-term manufacturability.
Supply support for IRF820APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRF820APBF-BE3 belongs to Vishay's legacy high-voltage power MOSFET family, engineered for ruggedness and consistency in industrial and telecom power conversion systems.
FAQ
What is the maximum continuous drain current for IRF820APBF-BE3 at 100 °C case temperature?
The IRF820APBF-BE3 supports 1.6 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 to +150 °C operating range. Designers must verify heatsink performance to maintain this condition in sustained operation.
Does IRF820APBF-BE3 have a fully rated avalanche capability, and what is its single-pulse energy limit?
Yes, the IRF820APBF-BE3 is fully characterized for repetitive and single-pulse avalanche operation. Its datasheet specifies a single-pulse avalanche energy (EAS) of 140 mJ under defined test conditions (L = 45 mH, IAS = 2.5 A, TJ starting at 25 °C). This rating is validated and usable for design margining in unclamped inductive switching scenarios.
What is the gate-source threshold voltage range for IRF820APBF-BE3, and how does it affect drive circuit design?
The IRF820APBF-BE3 has a VGS(th) range of 2.0 V to 4.5 V at TJ = 25 °C. This ensures reliable turn-on with standard 10 V gate drive while preventing accidental conduction from noise or leakage. Drive circuits must supply ≥4.5 V to guarantee full enhancement, and gate resistors should be selected to control dV/dt-induced ringing without compromising switching speed.
How does the body diode performance of IRF820APBF-BE3 compare to standard FRDs in SMPS applications?
The IRF820APBF-BE3 body diode exhibits trr = 330–500 ns and Qrr = 760–1140 nC at TJ = 25 °C, which is slower than dedicated fast recovery diodes but sufficient for self-commutated topologies like forward converters. Its VSD = 1.6 V at IS = 2.5 A contributes to conduction loss during freewheeling, so synchronous rectification or external diode use is recommended for efficiency-critical designs.
Is IRF820APBF-BE3 RoHS-compliant and halogen-free, and what does the "BE3" suffix indicate?
Yes, the "BE3" suffix explicitly denotes that the IRF820APBF-BE3 is both lead (Pb)-free and halogen-free, meeting IPC-1752A and JEDEC JS709 standards. It contains no brominated or chlorinated flame retardants and complies with EU RoHS Directive 2011/65/EU and China RoHS II, making it suitable for environmentally regulated industrial and telecom equipment.
IRF820APBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF820APBF-BE3 FAQ
1.How can I place an order for IRF820APBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF820APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF820APBF-BE3 reliable?
The price and inventory of IRF820APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820APBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF820APBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820APBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF820APBF-BE3?
IRF820APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF820APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF820APBF-BE3?
For technical support, including IRF820APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820APBF-BE3 requirements.
6.How does Aetrix verify that IRF820APBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF820APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820APBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF820APBF-BE3?
All IRF820APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF820APBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF820APBF-BE3 part is unused and in its original packaging.
Return procedure for IRF820APBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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