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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820AS

Name: IRF820AS
Brand: Vishay Siliconix
SKU: IRF820AS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820AS

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF820AS.pdf

Description:: MOSFET N-CH 500V 2.5A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF820AS from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - designed for high-voltage switching in SMPS half-bridge and forward converter topologies.

For engineers reviewing the IRF820AS datasheet, IRF820AS pinout, IRF820AS application, or IRF820AS equivalent, key selection criteria include its 500 V V_DS, 2.5 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and validated unclamped inductive switching ruggedness up to 2.5 A.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized gate oxide and drift region design to achieve stable 500 V breakdown voltage and low R_DS(on) while maintaining robust dV/dt immunity (3.4 V/ns peak diode recovery). Its body diode exhibits 330–500 ns reverse recovery time and 760–1140 nC Q_rr under standardized 2.5 A, 100 A/μs conditions.

The device is characterized for repetitive avalanche operation (5.0 mJ EAR), linear SOA compliance up to 100 V/2.5 A, and thermal performance validated on FR-4 PCB with 1"² copper area. Gate drive requirements are simplified by low Q_g (17 nC) and moderate Q_gd/Q_gs ratio (8.5/4.3 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on) max	3.0 Ω at V_GS = 10 V, I_D = 1.5 A - enables <1.9 W conduction loss at 2.5 A
Q_g max	17 nC - allows direct drive from standard 1 A gate drivers without buffering
E_AS	140 mJ - withstands unclamped inductive turn-off events in hard-switched converters
R_thJC	2.5 °C/W - enables 50 W power dissipation with ≤125 °C junction rise above 25 °C case
I_D cont	2.5 A at T_C = 25 °C - rated for continuous operation in thermally managed heatsinked designs
trr / Q_rr	330–500 ns / 760–1140 nC - defines minimum dead-time and snubber sizing in synchronous rectification

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad (drain-connected), 3-pin configuration, and JEDEC-compliant outline per document 91364. Mounting requires M3 screw (1.1 N·m torque) or solder reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–30 V V_GS; threshold 2.0–4.5 V; ±100 nA leakage at ±30 V
D	Drain	High-voltage power input/output; electrically connected to thermal pad; rated 500 V
S	Source	Power return and reference node; ties to gate driver ground; hosts body diode anode

Key Features

Feature	Design Value
Low Q_g (17 nC)	Reduces gate drive power and enables use of low-cost microcontroller GPIOs with external buffer
Enhanced dV/dt ruggedness (3.4 V/ns)	Prevents false turn-on during high dv/dt commutation in bridge configurations
Characterized C_{oss eff} (28 pF)	Enables accurate soft-switching timing prediction and ZVS transition design
140 mJ E_AS	Supports reliable operation in non-clamped inductive load switching without external snubbers
Body diode Q_rr spec (760–1140 nC)	Allows precise dead-time calculation to avoid shoot-through in synchronous topologies

Applications

Switch Mode Power Supply	Uninterruptible Power Supply
Use Scenario: Primary-side switch in 2-transistor forward converter operating from 375–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer; operates at 50–200 kHz with hard switching. Use Value: 500 V rating avoids series stacking; 2.5 Ω R_DS(on) limits conduction loss to <1.9 W at full load; 140 mJ E_AS handles leakage inductance spikes.	Use Scenario: Inverter stage H-bridge switch delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Output-stage power switch enabling bidirectional AC output synthesis; duty-cycled with PWM modulation. Use Value: 2.5 A continuous rating supports 1 kVA at 230 VAC; 3.4 V/ns dV/dt immunity prevents spurious turn-on during fast polarity reversal.
Industrial Motor Drive	LED Driver Power Stage
Use Scenario: Half-bridge leg in 400 W brushless DC motor controller with regenerative braking. IC Role / Device Role / Timing Role: Low-side and high-side switching element managing phase current commutation; subject to inductive flyback. Use Value: Body diode trr (330–500 ns) and Qrr (760–1140 nC) enable clean freewheeling; avalanche rating absorbs braking energy transients.	Use Scenario: Constant-current buck switch regulating 700 mA across 40 V LED string in outdoor lighting. IC Role / Device Role / Timing Role: Main power switch modulating average current through inductor-based current loop. Use Value: 500 V V_DS accommodates 300 VAC line surge transients; 17 nC Q_g permits efficient 100–500 kHz operation with minimal gate loss.

Switch Mode Power Supply

Uninterruptible Power Supply

Use Scenario: Primary-side switch in 2-transistor forward converter operating from 375–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer; operates at 50–200 kHz with hard switching.

Use Value: 500 V rating avoids series stacking; 2.5 Ω R_DS(on) limits conduction loss to <1.9 W at full load; 140 mJ E_AS handles leakage inductance spikes.

Use Scenario: Inverter stage H-bridge switch delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Output-stage power switch enabling bidirectional AC output synthesis; duty-cycled with PWM modulation.

Use Value: 2.5 A continuous rating supports 1 kVA at 230 VAC; 3.4 V/ns dV/dt immunity prevents spurious turn-on during fast polarity reversal.

Industrial Motor Drive

LED Driver Power Stage

Use Scenario: Half-bridge leg in 400 W brushless DC motor controller with regenerative braking.

IC Role / Device Role / Timing Role: Low-side and high-side switching element managing phase current commutation; subject to inductive flyback.

Use Value: Body diode trr (330–500 ns) and Qrr (760–1140 nC) enable clean freewheeling; avalanche rating absorbs braking energy transients.

Use Scenario: Constant-current buck switch regulating 700 mA across 40 V LED string in outdoor lighting.

IC Role / Device Role / Timing Role: Main power switch modulating average current through inductor-based current loop.

Use Value: 500 V V_DS accommodates 300 VAC line surge transients; 17 nC Q_g permits efficient 100–500 kHz operation with minimal gate loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 4.4 Ω R_DS(on), 12 nC Q_g, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases drive but smaller package limits thermal capacity	Preferred where board space is constrained and gate drive is weak, but not for >2 A continuous loads
IXTP50N10P	100 V, 50 A, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating precludes direct replacement in 400 V systems; vastly higher current capability irrelevant for this topology	Only suitable in low-voltage (<120 V) high-current applications - not a functional substitute for IRF820AS

Compared with STP5NB50FP and IXTP50N10P, the IRF820AS uniquely balances 500 V capability, 2.5 A current handling, and D2PAK thermal performance for medium-power SMPS - neither alternative matches its combination of voltage rating, package thermal interface, and ruggedness validation.

Availability

IRF820AS is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and industrial motor drives requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for IRF820AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, optoelectronics, and passive components, with emphasis on reliability and ruggedness for industrial and power applications.

The IRF820AS belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in hard-switched power conversion systems where avalanche energy absorption and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current rating for IRF820AS at 100 °C case temperature?

The IRF820AS has a maximum continuous drain current of 1.6 A when the case temperature is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF820AS must be mounted on adequate copper area or heatsink to sustain this current level reliably.

Does IRF820AS have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRF820AS features a fully characterized intrinsic body diode with trr = 330–500 ns and Qrr = 760–1140 nC at TJ = 25 °C, IF = 2.5 A, and dI/dt = 100 A/μs. These values are measured and documented in the datasheet, enabling accurate dead-time design in bridge configurations. The IRF820AS body diode voltage is 1.6 V at IS = 2.5 A and VGS = 0 V.

Is IRF820AS RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRF820AS ordering variant IRF820ASPbF is lead (Pb)-free and RoHS-compliant, as confirmed in the Ordering Information section. The 'PbF' suffix explicitly denotes lead-free termination, consistent with Vishay's material categorization per document 99912. The device meets EU RoHS Directive 2011/65/EU requirements without exemptions.

What is the gate threshold voltage range for IRF820AS, and how does it affect drive circuit design?

The IRF820AS has a gate threshold voltage VGS(th) ranging from 2.0 V to 4.5 V at VDS = VGS and ID = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement and low RDS(on); logic-level drivers (3.3 V or 5 V) will not fully turn on the IRF820AS. Designers must verify that the gate driver delivers ≥10 V with sufficient current to charge 17 nC Qg within required switching times.

Can IRF820AS be used in avalanche mode, and what energy level is guaranteed?

Yes, the IRF820AS is fully characterized for single-pulse avalanche operation with a guaranteed EAS of 140 mJ under test conditions of L = 45 mH, Rg = 25 Ω, and IAS = 2.5 A. Repetitive avalanche energy is rated at 5.0 mJ. These values are validated per JEDEC standards and documented in the datasheet - the IRF820AS may be intentionally operated in unclamped inductive switching if energy remains within these limits.

IRF820AS Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF820AS FAQ

1.How can I place an order for IRF820AS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820AS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820AS reliable?

The price and inventory of IRF820AS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820AS is usually 5 days.

3.What payment methods are accepted for IRF820AS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820AS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820AS?

IRF820AS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820AS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820AS?

For technical support, including IRF820AS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820AS requirements.

6.How does Aetrix verify that IRF820AS is sourced from the original manufacturer or authorized distributors?

All IRF820AS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820AS meets industry standards.

7.What is the process for return or replacement of IRF820AS?

All IRF820AS units undergo pre-shipment inspection (PSI). If there is an issue with IRF820AS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820AS part is unused and in its original packaging.

Return procedure for IRF820AS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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