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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820ASPBF

Name: IRF820ASPBF
Brand: Vishay Siliconix
SKU: IRF820ASPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820ASPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF820ASPBF.pdf

Description:: MOSFET N-CH 500V 2.5A D2PAK

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Product details

Overview

IRF820ASPBF from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems. It features 3.0 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - enabling robust unclamped inductive switching in forward and bridge topologies.

For engineers reviewing the IRF820ASPBF datasheet, IRF820ASPBF pinout, IRF820ASPBF application, or IRF820ASPBF equivalent, key selection criteria include its 500 V V_DS, 2.5 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and dV/dt ruggedness of 3.4 V/ns - all critical for reliable high-speed power conversion design.

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche performance and effective output capacitance (C_{oss eff.} = 28 pF). Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_gs ratio (8.5/4.3 nC) support stable hard-switching operation under high dV/dt stress.

The body diode exhibits 330–500 ns reverse recovery time and 760–1140 nC Q_rr at T_J = 25 °C, making it suitable for freewheeling paths in non-synchronous converters where controlled diode conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications
R_DS(on) max	3.0 Ω at V_GS = 10 V - determines conduction loss in continuous 2.5 A operation
Q_g max	17 nC - defines gate drive power and switching speed in 400 V, 2.5 A hard-switched circuits
E_AS	140 mJ - enables safe unclamped inductive turn-off without external snubbers
R_thJC	2.5 °C/W - allows 50 W power dissipation with ≤125 °C case temperature rise
dV/dt rating	3.4 V/ns - ensures immunity to parasitic turn-on during high-speed voltage transients
I_D cont.	2.5 A at T_C = 25 °C - sets maximum steady-state current in PCB-mounted thermal conditions

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated heat slug on lead 2 (Drain), 3-pin configuration, and JEDEC-compliant outline per document 91364.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; Q_gs = 4.3 nC
2 (D)	Drain	Main high-voltage power terminal; thermally connected to exposed pad for heatsinking
3 (S)	Source	Power return and gate reference node; ties to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Low gate charge	Q_g = 17 nC enables simple gate driver implementation with minimal IC overhead
Avalanche ruggedness	140 mJ E_AS supports reliable operation in inductive load switching without snubber networks
Dynamic dV/dt immunity	3.4 V/ns rating prevents false triggering during fast voltage transitions in bridge configurations
Body diode characterization	Q_rr = 760–1140 nC and t_rr = 330–500 ns allow predictable freewheeling behavior in non-synchronous topologies
Thermal performance	R_thJC = 2.5 °C/W enables high-power density designs with direct heatsink mounting

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in two-transistor forward converter operating from rectified 375 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 50–200 kHz with hard commutation. Use Value: 500 V V_DS and 140 mJ E_AS ensure safe clamping during leakage inductance spikes without auxiliary circuits.	Use Scenario: Inverter-stage switching element in line-interactive UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional power flow between battery bank and AC output. Use Value: 2.5 Ω R_DS(on) minimizes conduction loss at 2.5 A RMS, while 3.4 V/ns dV/dt rating maintains gate control during bus transients.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Fast-turning discrete switch isolating 24–48 V DC loads from microcontroller GPIOs. Use Value: 17 nC Q_g enables sub-100 ns turn-on with standard 1 A gate drivers, supporting 10 kHz+ PWM control.	Use Scenario: Brake chopper switch dissipating regenerated energy from 24 V DC motor deceleration. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events on DC bus. Use Value: Fully characterized avalanche capability (I_AR = 2.5 A, E_AR = 5.0 mJ) permits repeated safe energy absorption without derating.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in two-transistor forward converter operating from rectified 375 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 50–200 kHz with hard commutation.

Use Value: 500 V V_DS and 140 mJ E_AS ensure safe clamping during leakage inductance spikes without auxiliary circuits.

Use Scenario: Inverter-stage switching element in line-interactive UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional power flow between battery bank and AC output.

Use Value: 2.5 Ω R_DS(on) minimizes conduction loss at 2.5 A RMS, while 3.4 V/ns dV/dt rating maintains gate control during bus transients.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Fast-turning discrete switch isolating 24–48 V DC loads from microcontroller GPIOs.

Use Value: 17 nC Q_g enables sub-100 ns turn-on with standard 1 A gate drivers, supporting 10 kHz+ PWM control.

Use Scenario: Brake chopper switch dissipating regenerated energy from 24 V DC motor deceleration.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events on DC bus.

Use Value: Fully characterized avalanche capability (I_AR = 2.5 A, E_AR = 5.0 mJ) permits repeated safe energy absorption without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.4 A, R_DS(on) = 1.4 Ω, Q_g = 18 nC, TO-220FP package	Higher current rating but larger R_DS(on) mismatch; requires different thermal interface	Prefer when higher continuous current (4.4 A) is needed and through-hole mounting is acceptable
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 75 nC, TO-220 package	Lower voltage rating (100 V) and incompatible avalanche specs; not substitutable in 400 V systems	Only viable in low-voltage (<100 V) motor control or DC-DC stages - not a functional alternative for IRF820ASPBF use cases

Compared with STP5NK50ZFP and IXTP50N10P, the IRF820ASPBF offers optimal balance of 500 V rating, 2.5 A current capability, and 17 nC gate charge in surface-mount D2PAK - making it uniquely suited for space-constrained, high-reliability SMPS primary switches where avalanche margin and thermal efficiency are prioritized over raw current headroom.

Availability

IRF820ASPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and industrial motor control applications requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF820ASPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial and automotive markets.

The IRF820ASPBF belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline AC-DC converters and UPS inverters where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRF820ASPBF at 100 °C case temperature?

The IRF820ASPBF supports 1.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual board-level thermal resistance in the target application layout.

Does IRF820ASPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF820ASPBF integrates a monolithic body diode with 2.5 A continuous forward current rating, 1.6 V forward voltage at 2.5 A and 25 °C, and reverse recovery characteristics of 330–500 ns t_rr and 760–1140 nC Q_rr. These values are measured under standardized conditions (T_J = 25 °C, I_F = 2.5 A, dI/dt = 100 A/μs) and define its freewheeling capability in non-synchronous topologies.

What is the gate threshold voltage range for IRF820ASPBF, and how does it affect drive requirements?

The IRF820ASPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA. This wide spread necessitates a minimum 10 V gate drive to ensure full enhancement and consistent R_DS(on) performance across unit-to-unit variation and temperature extremes - critical for stable conduction loss in production systems.

Can IRF820ASPBF be used in synchronous rectification applications?

No, the IRF820ASPBF is not recommended for synchronous rectification due to its relatively high R_DS(on) (3.0 Ω) and unoptimized body diode recovery (Q_rr up to 1140 nC). Synchronous rectifiers require lower on-resistance and faster, softer-recovery diodes - characteristics found in dedicated SR MOSFETs like Vishay's SiR626DP, not the IRF820ASPBF.

What is the peak diode recovery dV/dt rating for IRF820ASPBF, and why is it important?

The IRF820ASPBF specifies a peak diode recovery dV/dt rating of 3.4 V/ns. This parameter quantifies the device's ability to withstand rapid voltage rise across the drain-source terminals during body diode commutation without spurious turn-on - a critical reliability factor in half-bridge and LLC resonant converter designs where high-frequency voltage transients occur during zero-current switching transitions.

IRF820ASPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF820ASPBF FAQ

1.How can I place an order for IRF820ASPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820ASPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820ASPBF reliable?

The price and inventory of IRF820ASPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820ASPBF is usually 5 days.

3.What payment methods are accepted for IRF820ASPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820ASPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820ASPBF?

IRF820ASPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820ASPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820ASPBF?

For technical support, including IRF820ASPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820ASPBF requirements.

6.How does Aetrix verify that IRF820ASPBF is sourced from the original manufacturer or authorized distributors?

All IRF820ASPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820ASPBF meets industry standards.

7.What is the process for return or replacement of IRF820ASPBF?

All IRF820ASPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF820ASPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820ASPBF part is unused and in its original packaging.

Return procedure for IRF820ASPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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