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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820PBF-BE3

Name: IRF820PBF-BE3
Brand: Vishay Siliconix
SKU: IRF820PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF820PBF-BE3.pdf

Description:: MOSFET N-CH 500V 2.5A TO220AB

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Product details

Overview

IRF820PBF-BE3 from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in TO-220AB package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and repetitive avalanche rating-designed for flyback and SMPS primary-side switching in AC-DC adapters and industrial power supplies.

For engineers reviewing the IRF820PBF-BE3 datasheet, IRF820PBF-BE3 pinout, IRF820PBF-BE3 application, or IRF820PBF-BE3 equivalent, key selection criteria include its 500 V blocking capability, 2.5 A continuous drain current at 25 °C, TO-220AB thermal performance (R_thJC = 2.5 °C/W), and fast switching with 8 ns turn-on delay and 16 ns fall time.

Technical Context

This third-generation planar VDMOS device uses ruggedized silicon design to support unclamped inductive switching with 210 mJ single-pulse avalanche energy and 2.5 A repetitive avalanche current. Its gate threshold voltage (2.0–4.0 V) ensures reliable enhancement-mode operation across temperature.

The MOSFET integrates a fast-recovery body diode (t_rr = 260–520 ns, Q_rr = 0.7–1.4 nC) and exhibits low dynamic capacitances (C_iss = 360 pF, C_oss = 92 pF) optimized for high-frequency hard-switched topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input (85–265 V_AC) offline SMPS with ≥100% voltage margin
R_DS(on)	3.0 Ω @ V_GS = 10 V - enables <2.5 W conduction loss at 1.5 A DC, suitable for low-to-mid power converters
Q_g	24 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
I_D (continuous)	2.5 A @ T_C = 25 °C - defines maximum steady-state current before thermal derating begins
E_AS	210 mJ - quantifies safe single-pulse inductive energy handling without failure during startup or overload
t_r/t_f	8.6 ns / 16 ns - enables efficient operation at 200–500 kHz switching frequencies with low switching loss
V_SD	1.6 V @ I_S = 2.5 A - body diode forward drop impacts synchronous rectification feasibility and snubber losses

Pinout & Package

IRF820PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical robustness for industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; requires ≤24 nC charge for full turn-on
D (Drain)	High-side power terminal	Connected to transformer primary or bus rail; electrically tied to metal tab for heatsinking
S (Source)	Reference/return path	Serves as power ground reference for gate drive and current sensing; carries full load current

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.5 A I_AR and 5.0 mJ E_AR, enabling reliable operation under transient overloads without external clamping
Dynamic dV/dt rating	3.5 V/ns - suppresses false turn-on in high-noise environments like motor drives or PFC stages
Fast switching	8 ns t_d(on), 16 ns t_f - reduces transition losses and improves efficiency in high-frequency SMPS designs
Low R_thJC	2.5 °C/W - allows 50 W dissipation with modest heatsinking, simplifying thermal design in space-constrained enclosures
RoHS-compliant & halogen-free	IRF820PBF-BE3 meets JEDEC JS709C and IPC-1752A requirements for green electronics manufacturing

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 12–24 V output, 30–60 W flyback converter for medical peripherals and test equipment. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer via transformer; operates at 65–130 kHz with PWM duty cycle modulation. Use Value: 500 V V_DS and 210 mJ E_AS ensure robustness against line surges and transformer leakage spikes without snubber redesign.	Use Scenario: 48 V/5 A open-frame power supply for factory automation controllers and PLC I/O modules. IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback; handles 2.5 A peak primary current. Use Value: TO-220AB package with R_thJC = 2.5 °C/W enables stable operation at 70 °C ambient without forced air cooling.
LED Driver Power Stages	UPS Inverter Stages
Use Scenario: Constant-voltage LED driver for commercial signage with 36 V output and 2 A load. IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; commutates at 100–200 kHz with fixed frequency control. Use Value: 3.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load, maintaining >88% efficiency at 25 °C.	Use Scenario: Low-cost line-interactive UPS with 600 VA capacity and battery-backed inverter stage. IC Role / Device Role / Timing Role: Half-bridge high-side switch in modified sine-wave inverter; gated by 50 Hz–1 kHz square wave. Use Value: Repetitive avalanche rating (2.5 A I_AR) tolerates inductive kickback during battery switchover without desaturation protection.

AC-DC Adapters

Industrial SMPS

Use Scenario: 12–24 V output, 30–60 W flyback converter for medical peripherals and test equipment.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer via transformer; operates at 65–130 kHz with PWM duty cycle modulation.

Use Value: 500 V V_DS and 210 mJ E_AS ensure robustness against line surges and transformer leakage spikes without snubber redesign.

Use Scenario: 48 V/5 A open-frame power supply for factory automation controllers and PLC I/O modules.

IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback; handles 2.5 A peak primary current.

Use Value: TO-220AB package with R_thJC = 2.5 °C/W enables stable operation at 70 °C ambient without forced air cooling.

LED Driver Power Stages

UPS Inverter Stages

Use Scenario: Constant-voltage LED driver for commercial signage with 36 V output and 2 A load.

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; commutates at 100–200 kHz with fixed frequency control.

Use Value: 3.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load, maintaining >88% efficiency at 25 °C.

Use Scenario: Low-cost line-interactive UPS with 600 VA capacity and battery-backed inverter stage.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in modified sine-wave inverter; gated by 50 Hz–1 kHz square wave.

Use Value: Repetitive avalanche rating (2.5 A I_AR) tolerates inductive kickback during battery switchover without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.4 A, R_DS(on) = 1.4 Ω, Zener-protected gate, TO-220FP package	Lower R_DS(on) and higher I_D but higher Q_g (34 nC); requires stronger gate drive	Preferred when lower conduction loss is critical and gate drive can supply >2 A peak
FQP5N50C	500 V, 4.5 A, R_DS(on) = 1.4 Ω, TO-220 package, no avalanche rating	Higher current rating and lower on-resistance, but lacks repetitive avalanche specification and dV/dt immunity	Acceptable where surge immunity is managed externally and layout minimizes noise coupling

Compared with STP5NK50ZFP and FQP5N50C, IRF820PBF-BE3 trades higher R_DS(on) for proven avalanche ruggedness and tighter dV/dt immunity-making it preferable in cost-sensitive, reliability-critical flyback designs where gate drive simplicity and transient tolerance outweigh raw efficiency gains.

Availability

IRF820PBF-BE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for IRF820PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF820PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-reliability switching in offline power conversion-targeting applications where avalanche tolerance and thermal stability are prioritized over ultra-low R_DS(on).

FAQ

What is the maximum junction temperature for IRF820PBF-BE3?

The IRF820PBF-BE3 has an operating junction temperature range of -55 °C to +150 °C. This upper limit governs thermal design margins-when operated at 50 W power dissipation, the case temperature must remain ≤137.5 °C to stay within the 150 °C junction limit, assuming R_thJC = 2.5 °C/W. Derating curves in Figure 9 confirm 1.6 A continuous current at T_C = 100 °C.

Does IRF820PBF-BE3 have a built-in body diode, and what are its recovery characteristics?

Yes, IRF820PBF-BE3 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Its reverse recovery time (t_rr) is 260–520 ns at T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs, with Q_rr ranging from 0.7 to 1.4 nC. These values impact snubber sizing and EMI in hard-switched topologies but do not support synchronous rectification due to relatively high V_SD (1.6 V).

Is IRF820PBF-BE3 suitable for use in zero-voltage switching (ZVS) circuits?

IRF820PBF-BE3 is not optimized for ZVS operation. Its C_oss (92 pF) and C_rss (37 pF) are moderate but lack the tailored capacitance ratios and low-Q_gd/Q_gs ratio found in resonant-mode-optimized MOSFETs. While usable in quasi-resonant flyback with careful timing, its 13 nC Q_gd and 3.3 nC Q_gs yield a Miller ratio unsuited for clean ZVS transitions above 200 kHz.

What is the gate threshold voltage range for IRF820PBF-BE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRF820PBF-BE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms standard-level-not logic-level-drive compatibility. Reliable enhancement requires ≥10 V gate drive; operation below 6 V risks partial turn-on and excessive R_DS(on), increasing conduction loss and thermal stress in the IRF820PBF-BE3.

How does the avalanche rating of IRF820PBF-BE3 improve system reliability?

The IRF820PBF-BE3 is rated for 210 mJ single-pulse avalanche energy (E_AS) and 5.0 mJ repetitive avalanche energy (E_AR). This capability allows the device to safely absorb inductive energy during abnormal conditions-such as transformer saturation, shorted secondary windings, or startup surges-without catastrophic failure, eliminating the need for external clamping in many cost-sensitive flyback designs using the IRF820PBF-BE3.

IRF820PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF820PBF-BE3 FAQ

1.How can I place an order for IRF820PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820PBF-BE3 reliable?

The price and inventory of IRF820PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF820PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820PBF-BE3?

IRF820PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820PBF-BE3?

For technical support, including IRF820PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820PBF-BE3 requirements.

6.How does Aetrix verify that IRF820PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF820PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF820PBF-BE3?

All IRF820PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF820PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF820PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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